JP4226905B2 - 半導体パッケージおよびその調製方法 - Google Patents
半導体パッケージおよびその調製方法 Download PDFInfo
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- JP4226905B2 JP4226905B2 JP2002566524A JP2002566524A JP4226905B2 JP 4226905 B2 JP4226905 B2 JP 4226905B2 JP 2002566524 A JP2002566524 A JP 2002566524A JP 2002566524 A JP2002566524 A JP 2002566524A JP 4226905 B2 JP4226905 B2 JP 4226905B2
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- Prior art keywords
- film
- wafer
- sio
- platinum
- silicone
- Prior art date
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- Expired - Lifetime
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 43
- 238000002360 preparation method Methods 0.000 title description 2
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- 238000000034 method Methods 0.000 claims abstract description 66
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- 239000003054 catalyst Substances 0.000 claims description 31
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 27
- 229920005989 resin Polymers 0.000 claims description 26
- 239000011347 resin Substances 0.000 claims description 26
- 125000003342 alkenyl group Chemical group 0.000 claims description 21
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- 239000010703 silicon Substances 0.000 claims description 17
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 16
- 238000010438 heat treatment Methods 0.000 claims description 14
- 238000006459 hydrosilylation reaction Methods 0.000 claims description 14
- HRGDZIGMBDGFTC-UHFFFAOYSA-N platinum(2+) Chemical compound [Pt+2] HRGDZIGMBDGFTC-UHFFFAOYSA-N 0.000 claims description 12
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- FALJXSPLMPMHEL-UHFFFAOYSA-N C[Pt](C)C Chemical compound C[Pt](C)C FALJXSPLMPMHEL-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
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- 125000000094 2-phenylethyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])C([H])([H])* 0.000 description 2
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- 239000004971 Cross linker Substances 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
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- 125000000217 alkyl group Chemical group 0.000 description 2
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- IJOOHPMOJXWVHK-UHFFFAOYSA-N chlorotrimethylsilane Chemical compound C[Si](C)(C)Cl IJOOHPMOJXWVHK-UHFFFAOYSA-N 0.000 description 2
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- 229910052744 lithium Inorganic materials 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
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- 230000007246 mechanism Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
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- 125000000325 methylidene group Chemical group [H]C([H])=* 0.000 description 1
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- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
- 239000005051 trimethylchlorosilane Substances 0.000 description 1
- VEDJZFSRVVQBIL-UHFFFAOYSA-N trisilane Chemical compound [SiH3][SiH2][SiH3] VEDJZFSRVVQBIL-UHFFFAOYSA-N 0.000 description 1
- ZQTYRTSKQFQYPQ-UHFFFAOYSA-N trisiloxane Chemical compound [SiH3]O[SiH2]O[SiH3] ZQTYRTSKQFQYPQ-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0012—Processes making use of the tackiness of the photolithographic materials, e.g. for mounting; Packaging for photolithographic material; Packages obtained by processing photolithographic materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
- H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Condensed Matter Physics & Semiconductors (AREA)
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- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
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Description
各集積回路が多数のボンドパッドを有する、少なくとも一つの集積回路を含む活性表面を有する半導体ウェーハーと、
活性表面を覆っている硬化したシリコーン層を含む。但し、各ボンドパッドの少なくとも一部は、シリコーン層により覆われていない。シリコーン層は下記の段階を含む方法により調製される。
(i)フィルムを形成するために活性表面にシリコーン組成物を適用する段階。シリコーン組成物は下記を含む。
(A)一分子あたり平均少なくとも2つのシリコンに結合したアルケニル基を含有する有機ポリシロキサン。
(B)組成物を硬化するのに充分な濃度において、一分子あたり平均少なくとも2つのシリコンに結合した水素原子を含有する有機シリコン化合物。
(C)白金(II)β−ジケトネート錯体、(η−シクロペンタジエニル)トリアルキル白金錯体、トリアゼン酸化物−遷移金属錯体、(η−ジオレフィン)(σ−アリール)白金錯体、又はこれらの触媒を2つ以上含む混合物から選択される光活性ヒドロシリル化触媒の触媒量。
(ii)各ボンドパッドの少なくとも一部を覆っている無露光領域及び活性表面の残部を覆っている露光領域を有する部分的に露光したフィルムを製造する為に150〜800nmの波長を有する放射光にフィルムの一部をさらす段階。
(iii)露光領域が現像溶媒に実質的に不溶解となり、そして無露光領域が現像溶媒に溶解できるようになる時間のあいだ、部分的に露光したフィルムを加熱する段階。
(iv)現像溶媒で加熱したフィルムの無露光領域を除去して、パターン化フィルムを形成する段階。
(v)硬化したシリコーン層を形成するのに充分な時間のあいだ、パターン化フィルムを加熱する段階。
(i)フィルムを形成するために半導体ウェーハーの活性表面にシリコン組成物を適用する段階。この中で、活性表面は少なくとも一つの集積回路を含み、各集積回路は多数のボンドパッドを有する。シリコーン組成物は下記を含む。
(A)一分子あたり平均少なくとも2つのシリコンに結合したアルケニル基を含有する有機ポリシロキサン。
(B)組成物を硬化するのに充分な濃度において、一分子あたり平均少なくとも2つのシリコンに結合した水素原子を含有する有機シリコン化合物。
(C)白金(II)β−ジケトネート錯体、(η−シクロペンタジエニル)トリアルキル白金錯体、トリアゼン酸化物−遷移金属錯体、(η−ジオレフィン)(σ−アリール)白金錯体、又はこれらの触媒を2つ以上含む混合物から選択される光活性ヒドロシリル化触媒の触媒量。
(ii)各ボンドパッドの少なくとも一部を覆っている無露光領域及び活性表面の残部を覆っている露光領域を有する部分的に露光したフィルムを製造する為に150〜800nmの波長を有する放射光にフィルムの一部をさらす段階。
(iii)露光領域が現像溶媒に実質的に不溶解となり、そして無露光領域が現像溶媒に溶解できるようになる時間の量の間の部分的に露光フィルムを加熱する段階。
(iv)現像溶媒で加熱したフィルムの無露光領域を除去して、パターン化フィルムを形成する段階。
(v)硬化したシリコーン層を形成するのに充分な時間のあいだ、パターン化フィルムを加熱する段階。
ViMe2SiO(Me2SiO)aSiMe2Vi、
ViMe2SiO(Me2SiO)0.25a(MePhSiO)0.75aSiMe2Vi、
ViMe2SiO(Me2SiO)0.95a(Ph2SiO)0.05aSiMe2Vi、
ViMe2SiO(Me2SiO)0.98a(MeViSiO)0.02aSiMe2Vi、
Me3SiO(Me2SiO)0.95a(MeViSiO)0.05aSiMe3及び
PhMeViSiO(Me2SiO)aSiPhMeVi
式中、Me、Vi及びPhは、それぞれメチル、ビニル、フェニルを意味し、ポリジ有機シロキサンの粘度が0.001〜100,000Pa・Sであるような値を有する。
(i)フィルムを形成するために半導体ウェーハーの活性表面にシリコーン組成物を適用する段階。この中で、活性表面は少なくとも一つの集積回路を含み、各集積回路は多数のボンドパッドを有する。そして、シリコーン組成物は下記を含む。
(A)一分子あたり平均少なくとも2つのシリコンに結合したアルケニル基を含有する有機ポリシロキサン。
(B)組成物を硬化するのに充分な濃度において、一分子あたり平均少なくとも2つのシリコンに結合した水素原子を含有する有機シリコン化合物。
(C)光活性ヒドロシリル化触媒の触媒量。
(ii)各ボンドパッドの少なくとも一部を覆っている無露光領域及び活性表面の残部を覆っている露光領域を有する部分的に露光したフィルムを製造する為に150〜800nmの波長を有する放射光にフィルムの一部をさらす段階。
(iii)露光領域が現像溶媒に実質的に不溶解となり、そして無露光領域が現像溶媒に溶解できるようになる時間のあいだ、部分的に露光したフィルムを加熱する段階。
(iv)現像溶媒で加熱したフィルムの無露光領域を除去して、パターン化フィルムを形成する段階。
(v)硬化したシリコーン層を形成するのに充分な時間のあいだ、パターン化フィルムを加熱する段階。
好適な基盤には、アルミニウム、銀、銅、鉄及びそれらの合金の様な金属;シリコン;紙、木材、革及び織物の様な多孔物質;ポリエチレン及びポリプロピレンの様なポリオレフィン;ポリテトラフルオロエチレン及びポリビニルフルオリドの様なフルオロカーボンポリマー;ポリスチレン;ナイロンの様なポリアミド;ポリエステル及びアクリル性ポリマー;着色表面;セラミックス;ガラス及びガラス繊維布が含まれるがこの限りではない。
フィルム保持(%)=t2/t1×100
により計算された。ここで、t2は以下の実施例における方法により製造した硬化したパターンドシリコーンフィルムの厚さであり、t1は、UV露光の段階、露光後加熱及び現像(n−ブチルエーテルで処理)を除く以外は、同様の方法の使用により調製したシリコーンフィルムの厚さである。後者の場合において、パターンドしてない硬化したシリコーンフィルムの一部は、ウェーハー表面を露出させるために除去される。厚さ測定は上記で述べたようにして実行された。
樹脂(46.84部)、架橋剤42.16部及びメシチレン10.12部を、琥珀色ボトル中で混合した。触媒D(0.89部)は混合物に加えられ、混合は室温で0.5時間続けられた。その混合物は、直列に10μmと5μmのナイロン膜を含むステンレススチール缶(stainless steel canister)を通すことにより、それのあと圧力濾過された(138〜276kPa窒素)。シリコーン組成物(濾液)は、アルミニウム箔で包まれた密閉ポリエチレンボトルの中に−15℃で使用する前に保存された。
各実施例4〜34において、シリコーン組成物は、表2の中で明記した触媒とシリコーン基材を下記の手順により混合することにより調製された。シリコーン基材(99.15部)と触媒の0.85部は琥珀色ボトルの中で化合され、室温で0.5時間混合した。混合物は、直列に10μmと5μmのナイロン膜を含むステンレススチール缶を通すことによりそのあと圧力濾過された(138〜276kPa窒素)。シリコーン組成物(濾液)は、アルミニウム箔で包まれた密閉ポリエチレンボトルの中に−15℃で使用する前に保存された。
Claims (10)
- (i)フィルムを形成するために基盤の表面に、
(A)一分子あたり平均少なくとも2つのシリコンに結合したアルケニル基を含有する有機ポリシロキサンと、
(B)組成物を硬化するのに充分な濃度において、一分子あたり平均少なくとも2つのシリコンに結合した水素原子を含有する有機シリコン化合物と、
(C)白金(II)β−ジケトネート錯体、(η−シクロペンタジエニル)トリアルキル白金錯体、トリアゼン酸化物−遷移金属錯体、(η−ジオレフィン)(σ−アリール)白金錯体、又はこれらの触媒を2つ以上含む混合物から選択される光活性ヒドロシリル化触媒の触媒量と、
を含むシリコーン組成物を適用する段階と、
(ii)表面の一部を覆っている無露光領域及び表面の残部を覆っている露光領域を有する部分的に露光したフィルムを製造する為に150〜800nmの波長を有する放射光にフィルムの一部をさらす段階と、
(iii)露光領域が現像溶媒に実質的に不溶解となり、そして無露光領域が現像溶媒に溶解できるようになる時間のあいだ、部分的に露光したフィルムを加熱する段階と、
(iv)現像溶媒で加熱したフィルムの無露光領域を除去して、パターン化フィルムを形成する段階と、
(v)硬化したシリコーン層を形成するのに充分な時間のあいだ、パターン化フィルムを加熱する段階と、
により特徴付けられた、パターン化フィルムを製造する方法。 - 基盤は半導体ウェーハーを含み、表面は半導体ウェーハーの活性表面を含み、活性表面は少なくとも一つの集積回路を含み、各集積回路は多数のボンドパッドを有する請求項1に記載の方法。
- ウェーハーがストリートをさらに含む請求項2に記載の方法。
- 硬化したシリコーン層の厚さが1〜50μmである請求項1〜3のいずれか一項に記載の方法。
- 成分(A)が本質的にR1 3SiO1/2シロキサン単位とSiO4/2シロキサン単位からなる有機ポリシロキサン樹脂であり、各R1は一価炭化水素及び一価ハロゲン化炭化水素基から独立して選択され、有機ポリシロキサン樹脂におけるSiO4/2単位に対するR1 3SiO1/2単位のモル比が0.6〜1.9である請求項1〜4のいずれか一項に記載の方法。
- 成分(B)が有機水素ポリシロキサンである請求項1〜5のいずれか一項に記載の方法。
- 成分(B)の濃度が成分(A)中のアルケニル基あたり0.7〜1.2のシリコンに結合した水素原子を提供するに充分な量である請求項1〜6のいずれか一項に記載の方法。
- 光活性触媒が白金(II)βジケトネートである請求項1〜7のいずれか一項に記載の方法。
- シリコーン組成物が、さらに有機溶媒を含む請求項1〜8のいずれか一項に記載の方法。
- 請求項2〜9のいずれか一項に記載の方法により調製された半導体パッケージ。
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US09/789,083 US6617674B2 (en) | 2001-02-20 | 2001-02-20 | Semiconductor package and method of preparing same |
PCT/US2002/001263 WO2002067292A2 (en) | 2001-02-20 | 2002-01-17 | Semiconductor package and method of preparing same |
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JP2004530288A JP2004530288A (ja) | 2004-09-30 |
JP2004530288A5 JP2004530288A5 (ja) | 2008-06-05 |
JP4226905B2 true JP4226905B2 (ja) | 2009-02-18 |
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JP2002566524A Expired - Lifetime JP4226905B2 (ja) | 2001-02-20 | 2002-01-17 | 半導体パッケージおよびその調製方法 |
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US (1) | US6617674B2 (ja) |
EP (1) | EP1362364B1 (ja) |
JP (1) | JP4226905B2 (ja) |
KR (1) | KR100813821B1 (ja) |
CN (3) | CN101581880B (ja) |
AT (1) | ATE494629T1 (ja) |
AU (1) | AU2002248357A1 (ja) |
CA (1) | CA2438126A1 (ja) |
DE (1) | DE60238823D1 (ja) |
TW (1) | TW563210B (ja) |
WO (2) | WO2002067292A2 (ja) |
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-
2001
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- 2002-01-17 CA CA002438126A patent/CA2438126A1/en not_active Abandoned
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- 2002-01-17 AT AT02717346T patent/ATE494629T1/de not_active IP Right Cessation
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US6617674B2 (en) | 2003-09-09 |
KR100813821B1 (ko) | 2008-03-17 |
WO2005017627A1 (en) | 2005-02-24 |
KR20030080012A (ko) | 2003-10-10 |
ATE494629T1 (de) | 2011-01-15 |
AU2002248357A1 (en) | 2002-09-04 |
CN101581880A (zh) | 2009-11-18 |
WO2002067292A2 (en) | 2002-08-29 |
US20020158317A1 (en) | 2002-10-31 |
CN1514954A (zh) | 2004-07-21 |
EP1362364A2 (en) | 2003-11-19 |
DE60238823D1 (de) | 2011-02-17 |
JP2004530288A (ja) | 2004-09-30 |
CN101581880B (zh) | 2011-12-14 |
EP1362364B1 (en) | 2011-01-05 |
TW563210B (en) | 2003-11-21 |
WO2002067292A3 (en) | 2002-12-19 |
CA2438126A1 (en) | 2002-08-29 |
CN1820230A (zh) | 2006-08-16 |
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