ATE494629T1 - Halbleitergehäuse und dessen herstellungsverfahren - Google Patents

Halbleitergehäuse und dessen herstellungsverfahren

Info

Publication number
ATE494629T1
ATE494629T1 AT02717346T AT02717346T ATE494629T1 AT E494629 T1 ATE494629 T1 AT E494629T1 AT 02717346 T AT02717346 T AT 02717346T AT 02717346 T AT02717346 T AT 02717346T AT E494629 T1 ATE494629 T1 AT E494629T1
Authority
AT
Austria
Prior art keywords
manufacturing process
semiconductor housing
silicone layer
wafer
integrated circuit
Prior art date
Application number
AT02717346T
Other languages
English (en)
Inventor
Gregory Becker
Geoffrey Gardner
Brian Harkness
Louise Malenfant
Satyendra Sarmah
Original Assignee
Dow Corning
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dow Corning filed Critical Dow Corning
Application granted granted Critical
Publication of ATE494629T1 publication Critical patent/ATE494629T1/de

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0012—Processes making use of the tackiness of the photolithographic materials, e.g. for mounting; Packaging for photolithographic material; Packages obtained by processing photolithographic materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Paints Or Removers (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
AT02717346T 2001-02-20 2002-01-17 Halbleitergehäuse und dessen herstellungsverfahren ATE494629T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/789,083 US6617674B2 (en) 2001-02-20 2001-02-20 Semiconductor package and method of preparing same
PCT/US2002/001263 WO2002067292A2 (en) 2001-02-20 2002-01-17 Semiconductor package and method of preparing same

Publications (1)

Publication Number Publication Date
ATE494629T1 true ATE494629T1 (de) 2011-01-15

Family

ID=25146536

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02717346T ATE494629T1 (de) 2001-02-20 2002-01-17 Halbleitergehäuse und dessen herstellungsverfahren

Country Status (11)

Country Link
US (1) US6617674B2 (de)
EP (1) EP1362364B1 (de)
JP (1) JP4226905B2 (de)
KR (1) KR100813821B1 (de)
CN (3) CN1514954A (de)
AT (1) ATE494629T1 (de)
AU (1) AU2002248357A1 (de)
CA (1) CA2438126A1 (de)
DE (1) DE60238823D1 (de)
TW (1) TW563210B (de)
WO (2) WO2002067292A2 (de)

Families Citing this family (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6617674B2 (en) * 2001-02-20 2003-09-09 Dow Corning Corporation Semiconductor package and method of preparing same
DE10144467B4 (de) * 2001-09-10 2006-07-27 Infineon Technologies Ag Elektronisches Sensorbauteil und Verfahren zu seiner Herstellung
US6836023B2 (en) * 2002-04-17 2004-12-28 Fairchild Semiconductor Corporation Structure of integrated trace of chip package
US6905904B2 (en) * 2002-06-24 2005-06-14 Dow Corning Corporation Planar optical waveguide assembly and method of preparing same
US6907176B2 (en) * 2002-06-24 2005-06-14 Dow Corning Corporation Planar optical waveguide assembly and method of preparing same
JP3910907B2 (ja) * 2002-10-29 2007-04-25 新光電気工業株式会社 キャパシタ素子及びこの製造方法、半導体装置用基板、並びに半導体装置
JP3910908B2 (ja) * 2002-10-29 2007-04-25 新光電気工業株式会社 半導体装置用基板及びこの製造方法、並びに半導体装置
US7145229B2 (en) * 2002-11-14 2006-12-05 The Regents Of The University Of California Silicone metalization
US20040102022A1 (en) * 2002-11-22 2004-05-27 Tongbi Jiang Methods of fabricating integrated circuitry
US20070160936A1 (en) * 2003-06-23 2007-07-12 Gardner Geoffrey B Adhesion method using gray-scale photolithography
JP4308821B2 (ja) * 2003-07-28 2009-08-05 ダウ・コーニング・コーポレイション パターン形成されたシリコーン層をエッチングする方法
CN100540275C (zh) * 2003-11-17 2009-09-16 陶氏康宁公司 固化有机硅树脂基底的压花方法
DE102004005562A1 (de) * 2004-02-03 2005-08-25 Kettenbach Gmbh & Co. Kg Über Hydrosilylierungs-Reaktion additionsvernetzende Zweikomponenten-Dentalmaterial mit starren und/oder voluminösen Gruppen sowie mit hoher Biegefestigkeit und E-Modul
US7208344B2 (en) * 2004-03-31 2007-04-24 Aptos Corporation Wafer level mounting frame for ball grid array packaging, and method of making and using the same
DE102004036573A1 (de) * 2004-07-28 2006-03-23 Ge Bayer Silicones Gmbh & Co. Kg Verwendung lichtaktivierbarer, härtbarer Silikonzusammensetzungen zur Herstellung von dickwandigen Formartikeln oder dickwandigen Beschichtungen
EP2653923A1 (de) 2004-08-11 2013-10-23 Dow Corning Corporation Methode zur Herstellung semipermeabler Membranen für Sensoranwendungen unter Verwendung von fotopolymerisierbarer Silikonmaterialien
KR101216576B1 (ko) * 2004-11-19 2012-12-31 다우 코닝 코포레이션 오가노하이드로겐폴리실록산 수지 및 실리콘 조성물
US8092910B2 (en) * 2005-02-16 2012-01-10 Dow Corning Toray Co., Ltd. Reinforced silicone resin film and method of preparing same
WO2006088645A1 (en) * 2005-02-16 2006-08-24 Dow Corning Corporation Reinforced silicone resin film and method of preparing same
US7541264B2 (en) 2005-03-01 2009-06-02 Dow Corning Corporation Temporary wafer bonding method for semiconductor processing
JP2006303452A (ja) * 2005-03-25 2006-11-02 Sanyo Electric Co Ltd 半導体装置及びその製造方法
JP4055015B2 (ja) * 2005-04-04 2008-03-05 セイコーエプソン株式会社 半導体装置の製造方法
KR101293093B1 (ko) * 2005-06-02 2013-08-05 더 리젠츠 오브 더 유니버시티 오브 미시간 나노패턴화 방법, 내부에 사용하기 위한 경화된 레지스트필름, 및 이 레지스트 필름을 포함하는 물품
JP5542331B2 (ja) * 2005-06-14 2014-07-09 ダウ・コーニング・コーポレイション 強化シリコーン樹脂フィルム及びそれらを調製する方法
EP1910471B1 (de) 2005-08-04 2012-06-06 Dow Corning Corporation Verstärkte silikonharzfolie und herstellungsverfahren dafür
KR100647483B1 (ko) * 2005-08-19 2006-11-23 삼성전자주식회사 반도체 패키지의 배선 구조물 및 이의 제조 방법, 이를이용한 웨이퍼 레벨 패키지 및 이의 제조 방법
CN101356237B (zh) 2005-12-21 2011-06-29 陶氏康宁公司 有机硅树脂膜，其制备方法和纳米材料填充的有机硅组合物
CN101346417B (zh) 2006-01-19 2012-01-25 陶氏康宁公司 有机硅树脂膜、其制备方法和纳米材料填充的有机硅组合物
KR20080094783A (ko) * 2006-02-02 2008-10-24 다우 코닝 코포레이션 실리콘 수지 필름, 이의 제조방법 및 나노 물질-충전된실리콘 조성물
US7449785B2 (en) * 2006-02-06 2008-11-11 Taiwan Semiconductor Manufacturing Co., Ltd. Solder bump on a semiconductor substrate
WO2007097835A2 (en) * 2006-02-20 2007-08-30 Dow Corning Corporation Silicone resin film, method of preparing same, and nanomaterial-filled silicone composition
JP2007258317A (ja) * 2006-03-22 2007-10-04 Shin Etsu Chem Co Ltd 半導体装置の製造方法
JP2007266191A (ja) * 2006-03-28 2007-10-11 Nec Electronics Corp ウェハ処理方法
CN101449206A (zh) * 2006-04-11 2009-06-03 陶氏康宁公司 热变形低的硅氧烷复合模具
US20090110917A1 (en) * 2006-06-05 2009-04-30 John Albaugh Electronic Package and Method of Preparing Same
JP5117498B2 (ja) * 2006-08-14 2013-01-16 ダウ・コーニング・コーポレイション 現像溶媒によるパターン化フィルムの調製方法
US7538021B2 (en) * 2006-09-20 2009-05-26 Intel Corporation Removing dry film resist residues using hydrolyzable membranes
SG175559A1 (en) * 2006-09-25 2011-11-28 Advanced Tech Materials Compositions and methods for the removal of photoresist for a wafer rework application
JP5426402B2 (ja) 2007-02-22 2014-02-26 ダウ コーニング コーポレーション 強化シリコーン樹脂フィルム
EP2117835A1 (de) 2007-02-22 2009-11-18 Dow Corning Corporation Verstärkte silikonharzfolien
US7834449B2 (en) * 2007-04-30 2010-11-16 Broadcom Corporation Highly reliable low cost structure for wafer-level ball grid array packaging
KR20100017500A (ko) * 2007-05-01 2010-02-16 다우 코닝 코포레이션 나노물질-충전된 실리콘 조성물 및 강화 실리콘 수지 필름
US7872347B2 (en) * 2007-08-09 2011-01-18 Broadcom Corporation Larger than die size wafer-level redistribution packaging process
US8017246B2 (en) * 2007-11-08 2011-09-13 Philips Lumileds Lighting Company, Llc Silicone resin for protecting a light transmitting surface of an optoelectronic device
US20100264522A1 (en) * 2009-04-20 2010-10-21 Chien-Pin Chen Semiconductor device having at least one bump without overlapping specific pad or directly contacting specific pad
US8643164B2 (en) * 2009-06-11 2014-02-04 Broadcom Corporation Package-on-package technology for fan-out wafer-level packaging
CN102753636B (zh) 2010-02-12 2014-02-12 道康宁公司 用于半导体加工的暂时晶片粘结方法
DE102010043149A1 (de) * 2010-10-29 2012-05-03 Wacker Chemie Ag Hochtransparente durch Licht vernetzbare Siliconmischungen
TW201601358A (zh) * 2014-06-19 2016-01-01 道康寧公司 用於晶圓級ｚ軸熱中介層的可光圖案化聚矽氧
JP2018507290A (ja) * 2015-02-03 2018-03-15 ダウ コーニング コーポレーションＤｏｗ Ｃｏｒｎｉｎｇ Ｃｏｒｐｏｒａｔｉｏｎ 硬化性シリコーン配合物及び関連する硬化生成物、方法、物品、並びにデバイス
TWI678551B (zh) 2015-07-28 2019-12-01 美商道康寧公司 智慧型光學材料、配方、方法、用途、物品、及裝置

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1369989A (en) 1970-11-27 1974-10-09 Dow Corning Ltd Organopolysiloxane elastomers
US3723497A (en) 1971-11-19 1973-03-27 Dow Corning Silicone compositions catalyzed with platinum ii diacetylacetonate
US4064027A (en) 1973-09-28 1977-12-20 Dow Corning Corporation UV curable composition
DE2736499C2 (de) 1977-08-12 1990-03-29 Wacker-Chemie GmbH, 8000 München Verfahren zum Herstellen von klebrige Stoffe abweisenden Überzügen
JPS5987840A (ja) 1982-11-10 1984-05-21 Toray Silicone Co Ltd 半導体装置
FR2597110A1 (fr) 1986-04-14 1987-10-16 Rhone Poulenc Multi Tech Composition organopolysiloxane, potentiellement reticulable et utilisable notamment en microlithographie, et son procede d'application
US5045918A (en) 1986-12-19 1991-09-03 North American Philips Corp. Semiconductor device with reduced packaging stress
US5171716A (en) 1986-12-19 1992-12-15 North American Philips Corp. Method of manufacturing semiconductor device with reduced packaging stress
US5145886A (en) 1988-05-19 1992-09-08 Minnesota Mining And Manufacturing Company Radiation activated hydrosilation reaction
US5091103A (en) * 1990-05-01 1992-02-25 Alicia Dean Photoresist stripper
EP0464614B1 (de) 1990-06-25 1999-09-29 Matsushita Electronics Corporation Licht- oder strahlungsempfindliche Zusammensetzung
US5679977A (en) * 1990-09-24 1997-10-21 Tessera, Inc. Semiconductor chip assemblies, methods of making same and components for same
US5678301A (en) * 1991-06-04 1997-10-21 Micron Technology, Inc. Method for forming an interconnect for testing unpackaged semiconductor dice
US5290397A (en) * 1992-08-21 1994-03-01 Cornell Research Foundation, Inc. Bilayer resist and process for preparing same
US5854302A (en) * 1993-04-29 1998-12-29 The Dow Chemical Company Partially polymerized divinylsiloxane linked bisbenzocyclobutene resins and methods for making said resins
US5834339A (en) * 1996-03-07 1998-11-10 Tessera, Inc. Methods for providing void-free layers for semiconductor assemblies
US6211572B1 (en) * 1995-10-31 2001-04-03 Tessera, Inc. Semiconductor chip package with fan-in leads
US6284563B1 (en) 1995-10-31 2001-09-04 Tessera, Inc. Method of making compliant microelectronic assemblies
CN1178230A (zh) * 1996-07-30 1998-04-08 日本化药株式会社 半导体封装用环氧树脂液体组合物
JP3639088B2 (ja) * 1997-06-06 2005-04-13 株式会社ルネサステクノロジ 半導体装置及び配線テープ
CN1244038A (zh) * 1998-08-04 2000-02-09 长兴化学工业股份有限公司 半导体封装用树脂组合物
US6103552A (en) 1998-08-10 2000-08-15 Lin; Mou-Shiung Wafer scale packaging scheme
JP4174174B2 (ja) * 2000-09-19 2008-10-29 株式会社ルネサステクノロジ 半導体装置およびその製造方法並びに半導体装置実装構造体
US6617674B2 (en) * 2001-02-20 2003-09-09 Dow Corning Corporation Semiconductor package and method of preparing same

Also Published As

Publication number Publication date
AU2002248357A1 (en) 2002-09-04
DE60238823D1 (de) 2011-02-17
CN101581880B (zh) 2011-12-14
WO2002067292A2 (en) 2002-08-29
CN1820230A (zh) 2006-08-16
CN101581880A (zh) 2009-11-18
TW563210B (en) 2003-11-21
WO2002067292A3 (en) 2002-12-19
JP4226905B2 (ja) 2009-02-18
EP1362364A2 (de) 2003-11-19
US6617674B2 (en) 2003-09-09
KR20030080012A (ko) 2003-10-10
CN1514954A (zh) 2004-07-21
KR100813821B1 (ko) 2008-03-17
CA2438126A1 (en) 2002-08-29
JP2004530288A (ja) 2004-09-30
US20020158317A1 (en) 2002-10-31
EP1362364B1 (de) 2011-01-05
WO2005017627A1 (en) 2005-02-24

Similar Documents

Publication Publication Date Title
ATE494629T1 (de) Halbleitergehäuse und dessen herstellungsverfahren
AU2003230678A1 (en) Semiconductor package and method of preparing same
TW516141B (en) Semiconductor device
TW200503209A (en) Semiconductor package
BR0109077A (pt) Dispositivo hermeticamente revestido e método de fabricação do mesmo
HK1067788A1 (en) A semiconductor device and its manufacturing method
HK1073389A1 (en) Semiconductor device and method of manufacturing the same
TW200603220A (en) Semiconductor device with a protected active die region and method therefor
AU2002340128A1 (en) Mos devices and corresponding manufacturing methods and circuits
TW200515557A (en) Semiconductor package, method for manufacturing the same and lead frame for use in the same
TWI256719B (en) Semiconductor device package module and manufacturing method thereof
TW200723478A (en) System-in-package structure
TW200721421A (en) Semiconductor structure and method of assembly
TW200605283A (en) Method of manufacturing semiconductor device
TW200509331A (en) Semiconductor chip package and method for making the same
SG115753A1 (en) Semiconductor element and wafer level chip size package therefor
TW200737437A (en) Chip package and package process thereof
TW200503221A (en) Semiconductor device having a bond pad and method therefor
TW200503217A (en) Wafer structure and bumping process
TW200731476A (en) Plastic packaged device with die interface layer
TW200518245A (en) Bond pad for flip chip package
SG60102A1 (en) Lead frame semiconductor package having the same and method for manufacturing the same
TW200514216A (en) Quad flat no-lead package structure and manufacturing method thereof
TW560698U (en) Structure of chip package
TW200719489A (en) Chip structure and manufacturing method of the same

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties