BR0109077A - Dispositivo hermeticamente revestido e método de fabricação do mesmo - Google Patents

Dispositivo hermeticamente revestido e método de fabricação do mesmo

Info

Publication number
BR0109077A
BR0109077A BR0109077-1A BR0109077A BR0109077A BR 0109077 A BR0109077 A BR 0109077A BR 0109077 A BR0109077 A BR 0109077A BR 0109077 A BR0109077 A BR 0109077A
Authority
BR
Brazil
Prior art keywords
layer
circuit matrix
semiconductor circuit
integrated semiconductor
manufacture
Prior art date
Application number
BR0109077-1A
Other languages
English (en)
Inventor
Michael Featherby
Jennifer L Dehaven
Original Assignee
Maxwell Elect Components Group
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Maxwell Elect Components Group filed Critical Maxwell Elect Components Group
Publication of BR0109077A publication Critical patent/BR0109077A/pt

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3135—Double encapsulation or coating and encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4807—Shape of bonding interfaces, e.g. interlocking features
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4845—Details of ball bonds
    • H01L2224/48451—Shape
    • H01L2224/48453—Shape of the interface with the bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85399—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01007—Nitrogen [N]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01012—Magnesium [Mg]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01018—Argon [Ar]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01022—Titanium [Ti]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01038—Strontium [Sr]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0104—Zirconium [Zr]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01041—Niobium [Nb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01055—Cesium [Cs]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01056—Barium [Ba]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01057—Lanthanum [La]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01058—Cerium [Ce]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01072—Hafnium [Hf]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01073—Tantalum [Ta]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01083—Bismuth [Bi]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12042—LASER
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Control And Other Processes For Unpacking Of Materials (AREA)

Abstract

"DISPOSITIVO HERMETICAMENTE REVESTIDO E MéTODO DE FABRICAçãO DO MESMO". Um dispositivo hermeticamente revestido (10) inclui uma matriz de circuito semicondutor integrado (16), uma primeira camada compreendendo um material inorgânico, a primeira camada (300) englobando a matriz de circuito integrado (16), uma segunda camada (400), a segunda camada (400) englobando a matriz de circuito semicondutor integrado (16). A formação de tal dispositivo inclui as etapas de fornecimento de uma matriz de circuito semicondutor integrado (16), a aplicação de uma primeira camada (300) compreendendo um material inorgânico, a primeira camada (300) englobando a matriz de circuito semicondutor integrado (16), e a aplicação de uma segunda camada (400), a segunda camada (400) englobando a matriz de circuito semicondutor integrado (16).
BR0109077-1A 2000-03-08 2001-03-07 Dispositivo hermeticamente revestido e método de fabricação do mesmo BR0109077A (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/520,928 US6368899B1 (en) 2000-03-08 2000-03-08 Electronic device packaging
PCT/US2001/007281 WO2001067504A1 (en) 2000-03-08 2001-03-07 Electronic device packaging

Publications (1)

Publication Number Publication Date
BR0109077A true BR0109077A (pt) 2003-06-03

Family

ID=24074614

Family Applications (1)

Application Number Title Priority Date Filing Date
BR0109077-1A BR0109077A (pt) 2000-03-08 2001-03-07 Dispositivo hermeticamente revestido e método de fabricação do mesmo

Country Status (11)

Country Link
US (2) US6368899B1 (pt)
EP (1) EP1269531A1 (pt)
JP (1) JP2003526920A (pt)
KR (1) KR20030003696A (pt)
CN (1) CN1416593A (pt)
AU (1) AU2001242012A1 (pt)
BR (1) BR0109077A (pt)
CA (1) CA2401702A1 (pt)
IL (1) IL151498A0 (pt)
MX (1) MXPA02008736A (pt)
WO (1) WO2001067504A1 (pt)

Families Citing this family (76)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6613978B2 (en) * 1993-06-18 2003-09-02 Maxwell Technologies, Inc. Radiation shielding of three dimensional multi-chip modules
WO2000074131A1 (en) * 1999-05-31 2000-12-07 Infineon Technologies A.G. A method of assembling a semiconductor device package
US20020113322A1 (en) * 2000-06-12 2002-08-22 Shinichi Terashima Semiconductor device and method to produce the same
EP1215724B1 (en) * 2000-11-20 2012-10-31 Texas Instruments Incorporated Wire bonded semiconductor device with low capacitance coupling
US6726996B2 (en) * 2001-05-16 2004-04-27 International Business Machines Corporation Laminated diffusion barrier
US6649446B1 (en) * 2001-11-29 2003-11-18 Clarisay, Inc. Hermetic package for multiple contact-sensitive electronic devices and methods of manufacturing thereof
US6777349B2 (en) * 2002-03-13 2004-08-17 Novellus Systems, Inc. Hermetic silicon carbide
US7723162B2 (en) * 2002-03-22 2010-05-25 White Electronic Designs Corporation Method for producing shock and tamper resistant microelectronic devices
US7382043B2 (en) 2002-09-25 2008-06-03 Maxwell Technologies, Inc. Method and apparatus for shielding an integrated circuit from radiation
US7517790B2 (en) * 2002-10-31 2009-04-14 International Business Machines Corporation Method and structure to enhance temperature/humidity/bias performance of semiconductor devices by surface modification
KR100518560B1 (ko) * 2003-03-04 2005-10-04 삼성전자주식회사 원자층 증착법을 이용한 박막 형성방법
US20040178498A1 (en) * 2003-03-10 2004-09-16 Low Qwai H. Wire bonding to full array bonding pads on active circuitry
US20070275181A1 (en) 2003-05-16 2007-11-29 Carcia Peter F Barrier films for plastic substrates fabricated by atomic layer deposition
US7094633B2 (en) * 2003-06-23 2006-08-22 Sandisk Corporation Method for efficiently producing removable peripheral cards
US7332797B2 (en) * 2003-06-30 2008-02-19 Intel Corporation Wire-bonded package with electrically insulating wire encapsulant and thermally conductive overmold
US7191516B2 (en) * 2003-07-16 2007-03-20 Maxwell Technologies, Inc. Method for shielding integrated circuit devices
US6934065B2 (en) * 2003-09-18 2005-08-23 Micron Technology, Inc. Microelectronic devices and methods for packaging microelectronic devices
US6955949B2 (en) * 2003-10-16 2005-10-18 Kulicke & Soffa Investments, Inc. System and method for reducing or eliminating semiconductor device wire sweep
US6847122B1 (en) 2003-10-16 2005-01-25 Kulicke & Soffa Investments, Inc. System and method for preventing and alleviating short circuiting in a semiconductor device
US7179688B2 (en) * 2003-10-16 2007-02-20 Kulicke And Soffa Industries, Inc. Method for reducing or eliminating semiconductor device wire sweep in a multi-tier bonding device and a device produced by the method
US7098544B2 (en) * 2004-01-06 2006-08-29 International Business Machines Corporation Edge seal for integrated circuit chips
DE102004015403A1 (de) * 2004-03-26 2005-11-03 Infineon Technologies Ag Verwendung nanoskaliger Partikel zur Erzeugung kratzfester Schutzschichten auf Halbleiterchips
US7705432B2 (en) * 2004-04-13 2010-04-27 Vertical Circuits, Inc. Three dimensional six surface conformal die coating
AU2005238962B2 (en) * 2004-04-23 2011-05-26 Philip Morris Products S.A. Aerosol generators and methods for producing aerosols
US8501277B2 (en) * 2004-06-04 2013-08-06 Applied Microstructures, Inc. Durable, heat-resistant multi-layer coatings and coated articles
US7364934B2 (en) * 2004-08-10 2008-04-29 Micron Technology, Inc. Microelectronic imaging units and methods of manufacturing microelectronic imaging units
DE102004047510A1 (de) * 2004-09-28 2006-04-13 Infineon Technologies Ag Halbleiterbauteil mit in Kunststoffgehäusemasse eingebetteten Halbleiterbauteilkomponenten
JP2006118669A (ja) * 2004-10-25 2006-05-11 Sanoh Industrial Co Ltd 樹脂チューブ
US20060102597A1 (en) * 2004-11-16 2006-05-18 Exponent, Inc. Electron beam welding method and apparatus using controlled volumetric heating
EP1843816B1 (en) * 2005-02-01 2017-07-12 Second Sight Medical Products, Inc. Micro-miniature implantable coated device
US7409878B2 (en) * 2005-04-08 2008-08-12 Honeywell International Inc. Torqueshaft magnetic field measurement systems for gas turbine engines
CN100399037C (zh) * 2005-04-30 2008-07-02 中国科学院空间科学与应用研究中心 一种针对商用塑封器件空间应用的筛选方法
DE102005025083B4 (de) * 2005-05-30 2007-05-24 Infineon Technologies Ag Thermoplast-Duroplast-Verbund und Verfahren zum Verbinden eines thermoplastischen Materials mit einem duroplastischen Material
DE102005025465B4 (de) 2005-05-31 2008-02-21 Infineon Technologies Ag Halbleiterbauteil mit Korrosionsschutzschicht und Verfahren zur Herstellung desselben
DE102005028704B4 (de) * 2005-06-20 2016-09-08 Infineon Technologies Ag Verfahren zur Herstellung eines Halbleiterbauteils mit in Kunststoffgehäusemasse eingebetteten Halbleiterbauteilkomponenten
US20070135552A1 (en) * 2005-12-09 2007-06-14 General Atomics Gas barrier
DE102005061248B4 (de) * 2005-12-20 2007-09-20 Infineon Technologies Ag Systemträger mit in Kunststoffmasse einzubettenden Oberflächen, Verfahren zur Herstellung eines Systemträgers und Verwendung einer Schicht als Haftvermittlerschicht
KR100762878B1 (ko) 2006-01-23 2007-10-08 주식회사 하이닉스반도체 플래너 스택 패키지
DE112006003861B4 (de) * 2006-05-10 2015-09-17 Infineon Technologies Ag Halbleiterbaugruppe und Verfahren zur Herstellung einer Halbleiterbaugruppe
US7928010B2 (en) * 2006-10-20 2011-04-19 Sandisk Corporation Method for producing portable memory devices
US8013332B2 (en) * 2006-10-20 2011-09-06 Sandisk Technologies Inc. Portable memory devices
US8294248B2 (en) * 2006-11-30 2012-10-23 Marvell World Trade Ltd. Chip on leads
US20080157307A1 (en) * 2006-12-28 2008-07-03 Semiconductor Manufacturing International (Shanghai) Corporation Lead frame
US8110906B2 (en) * 2007-01-23 2012-02-07 Infineon Technologies Ag Semiconductor device including isolation layer
US7923823B2 (en) * 2007-01-23 2011-04-12 Infineon Technologies Ag Semiconductor device with parylene coating
US8236379B2 (en) 2007-04-02 2012-08-07 Applied Microstructures, Inc. Articles with super-hydrophobic and-or super-hydrophilic surfaces and method of formation
US20080248263A1 (en) * 2007-04-02 2008-10-09 Applied Microstructures, Inc. Method of creating super-hydrophobic and-or super-hydrophilic surfaces on substrates, and articles created thereby
US7939932B2 (en) * 2007-06-20 2011-05-10 Analog Devices, Inc. Packaged chip devices with atomic layer deposition protective films
DE102007035608A1 (de) * 2007-07-30 2009-02-05 Infineon Technologies Ag Halbleitermodul mit Weichvergussschicht und Verfahren zur Herstellung desselben
US8097934B1 (en) 2007-09-27 2012-01-17 National Semiconductor Corporation Delamination resistant device package having low moisture sensitivity
US7902644B2 (en) * 2007-12-07 2011-03-08 Stats Chippac Ltd. Integrated circuit package system for electromagnetic isolation
CN101933139B (zh) * 2007-12-20 2012-11-07 爱信艾达株式会社 半导体装置及其制造方法
US9953952B2 (en) * 2008-08-20 2018-04-24 Infineon Technologies Ag Semiconductor device having a sealant layer including carbon directly contact the chip and the carrier
US8206829B2 (en) * 2008-11-10 2012-06-26 Applied Materials, Inc. Plasma resistant coatings for plasma chamber components
US20100164083A1 (en) * 2008-12-29 2010-07-01 Numonyx B.V. Protective thin film coating in chip packaging
JP5150597B2 (ja) * 2009-10-08 2013-02-20 新電元工業株式会社 半導体パッケージ及びその製造方法
DE102009058796A1 (de) 2009-12-18 2011-06-22 OSRAM Opto Semiconductors GmbH, 93055 Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
JP5427680B2 (ja) * 2010-04-14 2014-02-26 株式会社金陽社 有機薄膜太陽電池の製造方法
US20120166665A1 (en) * 2010-12-22 2012-06-28 Research In Motion Limited Method and system for selectively performing proxy services
US20120313272A1 (en) * 2011-06-10 2012-12-13 Aliphcom, Inc. Component protective overmolding
US9069380B2 (en) 2011-06-10 2015-06-30 Aliphcom Media device, application, and content management using sensory input
US20120313296A1 (en) * 2011-06-10 2012-12-13 Aliphcom Component protective overmolding
JP5956783B2 (ja) * 2012-03-02 2016-07-27 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
WO2013142580A1 (en) * 2012-03-20 2013-09-26 Applied Nanotech Holdings, Inc. Application of dielectric layer and circuit traces on heat sink
US20160050776A1 (en) * 2012-08-13 2016-02-18 Aliphcom Component protective overmolding using protective external coatings
DE102012108770A1 (de) * 2012-09-18 2014-03-20 Rudolf Heicks Elektronische Baugruppe mit einem räumlichen spritzgegossenen elektronischen Schaltungsträger
US20140141191A1 (en) * 2012-11-20 2014-05-22 Veeco Ald Inc. Hydrophobic and Oleophobic Encapsulation Material with Alternating Layers
US9233842B2 (en) * 2013-03-15 2016-01-12 Robert Bosch Gmbh Passivation layer for harsh environments and methods of fabrication thereof
JP6064928B2 (ja) * 2014-02-13 2017-01-25 トヨタ自動車株式会社 半導体装置
JP6672812B2 (ja) * 2016-01-14 2020-03-25 三菱電機株式会社 半導体装置及びその製造方法
DE102016106137B4 (de) 2016-04-04 2023-12-28 Infineon Technologies Ag Elektronikvorrichtungsgehäuse umfassend eine dielektrische Schicht und ein Kapselungsmaterial
DE102016109349A1 (de) * 2016-05-20 2017-11-23 Infineon Technologies Ag Chipgehäuse, verfahren zum bilden eines chipgehäuses und verfahren zum bilden eines elektrischen kontakts
US10177057B2 (en) * 2016-12-15 2019-01-08 Infineon Technologies Ag Power semiconductor modules with protective coating
US10847384B2 (en) * 2017-05-31 2020-11-24 Palo Alto Research Center Incorporated Method and fixture for chip attachment to physical objects
WO2020033193A1 (en) 2018-08-07 2020-02-13 Corning Incorporated Hermetically sealed package
US11552006B2 (en) * 2020-07-22 2023-01-10 Texas Instruments Incorporated Coated semiconductor devices

Family Cites Families (91)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL157456B (nl) * 1968-07-30 1978-07-17 Philips Nv Halfgeleiderinrichting in een isolerende kunststofomhulling.
US3771025A (en) 1969-10-02 1973-11-06 Gen Electric Semiconductor device including low impedance connections
US3828425A (en) 1970-10-16 1974-08-13 Texas Instruments Inc Method for making semiconductor packaged devices and assemblies
US3706840A (en) 1971-05-10 1972-12-19 Intersil Inc Semiconductor device packaging
US3914858A (en) 1974-08-23 1975-10-28 Nitto Electric Ind Co Method of making sealed cavity molded semiconductor devices
US4198444A (en) * 1975-08-04 1980-04-15 General Electric Company Method for providing substantially hermetic sealing means for electronic components
US4089575A (en) 1976-09-27 1978-05-16 Amp Incorporated Connector for connecting a circuit element to the surface of a substrate
US4100675A (en) 1976-11-01 1978-07-18 Mansol Ceramics Company Novel method and apparatus for hermetic encapsulation for integrated circuits and the like
US4091407A (en) 1976-11-01 1978-05-23 Rca Corporation Combination glass/low temperature deposited Siw Nx Hy O.sub.z
NL189379C (nl) 1977-05-05 1993-03-16 Richardus Henricus Johannes Fi Werkwijze voor inkapselen van micro-elektronische elementen.
JPS544781A (en) 1977-06-03 1979-01-13 Buichi Kataoka Fishing rod arranging apparatus in setting and throwing machine of fishing rod with reel
US4173683A (en) 1977-06-13 1979-11-06 Rca Corporation Chemically treating the overcoat of a semiconductor device
JPS56103452A (en) 1980-01-22 1981-08-18 Fujitsu Ltd Semiconductor device
JPS5795850A (en) 1980-12-04 1982-06-14 Ukenori Fukushi Method of drawing picture on glass surface and said glass picture
JPS5795650A (en) 1980-12-05 1982-06-14 Nec Corp Semiconductor device
US4975762A (en) 1981-06-11 1990-12-04 General Electric Ceramics, Inc. Alpha-particle-emitting ceramic composite cover
US4468411A (en) 1982-04-05 1984-08-28 Motorola, Inc. Method for providing alpha particle protection for an integrated circuit die
JPS58207657A (ja) 1982-05-28 1983-12-03 Fujitsu Ltd 半導体装置及びその製造方法
US4633573A (en) 1982-10-12 1987-01-06 Aegis, Inc. Microcircuit package and sealing method
US4506108A (en) 1983-04-01 1985-03-19 Sperry Corporation Copper body power hybrid package and method of manufacture
JPS60106150A (ja) 1983-11-15 1985-06-11 Nippon Telegr & Teleph Corp <Ntt> 耐放射線パツケ−ジ
JPS60124834A (ja) 1983-12-09 1985-07-03 Nec Corp 半導体装置の検査方法
JPS60180150A (ja) 1984-02-27 1985-09-13 Nippon Telegr & Teleph Corp <Ntt> 半導体装置
JPS60143398U (ja) 1984-03-05 1985-09-24 三菱電線工業株式会社 遮蔽材
US4523372A (en) 1984-05-07 1985-06-18 Motorola, Inc. Process for fabricating semiconductor device
US4652465A (en) 1984-05-14 1987-03-24 Nissan Chemical Industries Ltd. Process for the production of a silver coated copper powder and conductive coating composition
JPS60257546A (ja) 1984-06-04 1985-12-19 Mitsubishi Electric Corp 半導体装置及びその製造方法
JPS614249A (ja) 1984-06-19 1986-01-10 Sumitomo Electric Ind Ltd 半導体装置用パツケ−ジ
JPS614250A (ja) 1984-06-19 1986-01-10 Sumitomo Electric Ind Ltd 半導体装置用パツケ−ジ
US4804625A (en) 1984-09-27 1989-02-14 Amoco Corporation Assay procedures
US4663240A (en) 1984-11-06 1987-05-05 Enthone, Incorporated RFI shielded plastic articles and process for making same
FR2584863B1 (fr) 1985-07-12 1988-10-21 Inf Milit Spatiale Aeronaut Composant electronique durci vis-a-vis des radiations
US4687622A (en) 1985-10-29 1987-08-18 Irt Corporation Nuclear event detector
JPS62125651A (ja) 1985-11-26 1987-06-06 Nippon Telegr & Teleph Corp <Ntt> 耐放射線パツケ−ジ
US4625465A (en) * 1985-12-19 1986-12-02 Kirt Daryl L Hone stop assembly
US4935174A (en) 1986-01-13 1990-06-19 Canon Kabushiki Kaisha Resin molded article bearing electric circuit patterns and process for producing the same
FR2597652B1 (fr) 1986-04-16 1988-07-29 Aerospatiale Boitier de protection de circuits electroniques, durci vis-a-vis des rayons x
FR2597654B1 (fr) 1986-04-16 1989-06-30 Aerospatiale Gainage de protection de conducteurs electriques ou optiques, durci vis-a-vis des rayons x
US4891687A (en) 1987-01-12 1990-01-02 Intel Corporation Multi-layer molded plastic IC package
US4835120A (en) 1987-01-12 1989-05-30 Debendra Mallik Method of making a multilayer molded plastic IC package
US5047260A (en) 1987-02-06 1991-09-10 Key-Tech, Inc. Method for producing a shielded plastic enclosure to house electronic equipment
US5180513A (en) 1987-02-06 1993-01-19 Key-Tech, Inc. Shielded plastic enclosure to house electronic equipment
US4839716A (en) 1987-06-01 1989-06-13 Olin Corporation Semiconductor packaging
JPS644781A (en) 1987-06-29 1989-01-09 Olympus Optical Co Suction type liquid developing head
US4888449A (en) 1988-01-04 1989-12-19 Olin Corporation Semiconductor package
US4953002A (en) 1988-03-31 1990-08-28 Honeywell Inc. Semiconductor device housing with magnetic field protection
US4979019A (en) 1988-05-11 1990-12-18 Refractory Composites, Inc. Printed circuit board with inorganic insulating matrix
KR900019177A (ko) 1988-05-19 1990-12-24 야마자키 순페이 전기 장치 및 제조방법
DE3818114A1 (de) 1988-05-27 1989-11-30 Gruenzweig & Hartmann Montage Absorber fuer elektromagnetische und akustische wellen
JP2600366B2 (ja) 1989-03-09 1997-04-16 富士通株式会社 半導体チップの実装方法
JPH02278740A (ja) 1989-04-19 1990-11-15 Matsushita Electric Works Ltd 半導体装置のパッケージング方法
JPH03165058A (ja) 1989-11-24 1991-07-17 Mitsubishi Electric Corp 半導体装置
US4967315A (en) 1990-01-02 1990-10-30 General Electric Company Metallized ceramic circuit package
JPH03212006A (ja) 1990-01-17 1991-09-17 Sony Corp 高周波回路用パッケージ
US5139969A (en) 1990-05-30 1992-08-18 Mitsubishi Denki Kabushiki Kaisha Method of making resin molded semiconductor device
JPH0494560A (ja) 1990-08-10 1992-03-26 Seiko Epson Corp 半導体装置
US5847467A (en) * 1990-08-31 1998-12-08 Texas Instruments Incorporated Device packaging using heat spreaders and assisted deposition of wire bonds
US5250845A (en) 1990-11-30 1993-10-05 Hughes Aircraft Company Totally enclosed hermetic electronic module
US5166772A (en) 1991-02-22 1992-11-24 Motorola, Inc. Transfer molded semiconductor device package with integral shield
JPH04273200A (ja) 1991-02-27 1992-09-29 Toshiba Corp シールド装置
JPH04291948A (ja) 1991-03-20 1992-10-16 Fujitsu Ltd 半導体装置及びその製造方法及び放熱フィン
US5149662A (en) 1991-03-27 1992-09-22 Integrated System Assemblies Corporation Methods for testing and burn-in of integrated circuit chips
US5138430A (en) 1991-06-06 1992-08-11 International Business Machines Corporation High performance versatile thermally enhanced IC chip mounting
US5206794A (en) 1991-12-20 1993-04-27 Vlsi Technology, Inc. Integrated circuit package with device and wire coat assembly
CA2080177C (en) 1992-01-02 1997-02-25 Edward Allan Highum Electro-magnetic shield and method for making the same
US5268331A (en) 1992-01-07 1993-12-07 Texas Instruments Incorporated Stabilizer/spacer for semiconductor device lead frames
US5202536A (en) 1992-02-03 1993-04-13 Schlegel Corporation EMI shielding seal with partial conductive sheath
US5317107A (en) 1992-09-24 1994-05-31 Motorola, Inc. Shielded stripline configuration semiconductor device and method for making the same
US5656830A (en) 1992-12-10 1997-08-12 International Business Machines Corp. Integrated circuit chip composite having a parylene coating
US5589129A (en) 1993-02-19 1996-12-31 Kabushiki Kaisha Toshiba Method of manufacturing a molding using a filler or an additive concentrated on an arbitrary portion or distributed at a gradient concentration
US5384477A (en) 1993-03-09 1995-01-24 National Semiconductor Corporation CMOS latchup suppression by localized minority carrier lifetime reduction
CA2092371C (en) 1993-03-24 1999-06-29 Boris L. Livshits Integrated circuit packaging
US5629559A (en) * 1993-04-06 1997-05-13 Tokuyama Corporation Package for semiconductor device
US5294826A (en) 1993-04-16 1994-03-15 Northern Telecom Limited Integrated circuit package and assembly thereof for thermal and EMI management
US5825042A (en) 1993-06-18 1998-10-20 Space Electronics, Inc. Radiation shielding of plastic integrated circuits
US5880403A (en) 1994-04-01 1999-03-09 Space Electronics, Inc. Radiation shielding of three dimensional multi-chip modules
US5455745A (en) 1993-07-26 1995-10-03 National Semiconductor Corporation Coated bonding wires in high lead count packages
US5406117A (en) 1993-12-09 1995-04-11 Dlugokecki; Joseph J. Radiation shielding for integrated circuit devices using reconstructed plastic packages
FI117224B (fi) 1994-01-20 2006-07-31 Nec Tokin Corp Sähkömagneettinen häiriönpoistokappale, ja sitä soveltavat elektroninen laite ja hybridimikropiirielementti
US5770304A (en) 1994-07-11 1998-06-23 Nippon Paint Co., Ltd. Wide bandwidth electromagnetic wave absorbing material
US5672918A (en) 1994-08-18 1997-09-30 The United States Of America As Represented By The United States Department Of Energy System level latchup mitigation for single event and transient radiation effects on electronics
JP2875479B2 (ja) 1994-09-08 1999-03-31 日本ペルノックス株式会社 半導体の封止方法
US5552338A (en) 1994-09-26 1996-09-03 Intel Corporation Method of using latchup current to blow a fuse in an integrated circuit
US5577319A (en) 1995-03-31 1996-11-26 Motorola, Inc. Method of encapsulating a crystal oscillator
US5851852A (en) 1996-02-13 1998-12-22 Northrop Grumman Corporation Die attached process for SiC
JP2734443B2 (ja) * 1996-03-19 1998-03-30 日本電気株式会社 樹脂封止型半導体装置
US5780163A (en) 1996-06-05 1998-07-14 Dow Corning Corporation Multilayer coating for microelectronic devices
US5834891A (en) 1996-06-18 1998-11-10 Ppg Industries, Inc. Spacers, spacer units, image display panels and methods for making and using the same
US5888850A (en) 1997-09-29 1999-03-30 International Business Machines Corporation Method for providing a protective coating and electronic package utilizing same
US6365521B1 (en) * 1997-12-31 2002-04-02 Intel Corporation Passivation for tight metal geometry
JP3132449B2 (ja) * 1998-01-09 2001-02-05 日本電気株式会社 樹脂外装型半導体装置の製造方法

Also Published As

Publication number Publication date
IL151498A0 (en) 2003-04-10
MXPA02008736A (es) 2003-09-25
CA2401702A1 (en) 2001-09-13
JP2003526920A (ja) 2003-09-09
US20030013235A1 (en) 2003-01-16
US6368899B1 (en) 2002-04-09
EP1269531A1 (en) 2003-01-02
KR20030003696A (ko) 2003-01-10
AU2001242012A1 (en) 2001-09-17
US6963125B2 (en) 2005-11-08
CN1416593A (zh) 2003-05-07
WO2001067504A1 (en) 2001-09-13

Similar Documents

Publication Publication Date Title
BR0109077A (pt) Dispositivo hermeticamente revestido e método de fabricação do mesmo
AU4471797A (en) Semiconductor device, semiconductor chip mounting substrate, methods of manufacturing the device and substrate, adhesive, and adhesive double coated film
SG97825A1 (en) Semiconductor substrate and thin film semiconductor device, method of manufacturing the same, and anodizing apparatus
ATE408584T1 (de) Dünnschichtverkapselung von mems-bauelementen
DE60220230D1 (de) Herstellungsverfahren eines halbleiterbauelements
TWI268729B (en) Protected organic electronic devices and methods for making the same
DE60140359D1 (de) Eingekapselte mikroelektronische bauelemente
AU2002313948A1 (en) A wire structure, a thin film transistor substrate of using the wire structure and a method of manufacturing the same
AU2001232298A1 (en) Adhesive composition, process for producing the same, adhesive film made with the same, substrate for semiconductor mounting, and semiconductor device
DE69938767D1 (de) Halbleiterbauelement und dessen herstellungsverfahren, bauelementsubstrat, und elektronisches bauelement
EP1263062A3 (en) Organic semiconductor device and process of manufacturing the same
DE60238823D1 (de) Halbleitergehäuse und dessen herstellungsverfahren
EP2199437A3 (en) Organic semiconductor solution
DE60223419D1 (de) Verspannte cmos finfet bauelementestrukturen
EP1246248A3 (en) SOI semiconductor wafer and semiconductor device formed therein
WO2005050716A3 (en) High-temperature devices on insulator substrates
TW200618121A (en) Method of forming a semiconductor device and structure thereof
TW200513803A (en) Lithographic antireflective hardmask compositions and uses thereof
TW200707632A (en) Semiconductor device and forming method thereof
TW200520112A (en) Method for production of a film
AU2002354103A1 (en) Nitriding method for insulation film, semiconductor device and production method for semiconductor device, substrate treating device and substrate treating method
AU2003280168A1 (en) Stress-free composite substrate and method of manufacturing such a composite substrate
AU2002336579A1 (en) Porously coated open-structure substrate and method of manufacture thereof
EP0993043A3 (en) Semiconductor package and method of manufacturing the same
ZA200306360B (en) Method and device for producing thin wafers from a film of active ingredients.

Legal Events

Date Code Title Description
B11A Dismissal acc. art.33 of ipl - examination not requested within 36 months of filing
B11Y Definitive dismissal - extension of time limit for request of examination expired [chapter 11.1.1 patent gazette]