JP4226905B2 - 半導体パッケージおよびその調製方法 - Google Patents

半導体パッケージおよびその調製方法 Download PDF

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Publication number
JP4226905B2
JP4226905B2 JP2002566524A JP2002566524A JP4226905B2 JP 4226905 B2 JP4226905 B2 JP 4226905B2 JP 2002566524 A JP2002566524 A JP 2002566524A JP 2002566524 A JP2002566524 A JP 2002566524A JP 4226905 B2 JP4226905 B2 JP 4226905B2
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JP
Japan
Prior art keywords
film
wafer
sio
platinum
silicone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2002566524A
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English (en)
Japanese (ja)
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JP2004530288A5 (enExample
JP2004530288A (ja
Inventor
ベッカー、グレゴリー
ガードナー、ジェフリー
ハークネス、ブライアン
メレンファント、ルイス
サーマ、サティエンドラ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dow Silicones Corp
Original Assignee
Dow Corning Corp
Dow Silicones Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dow Corning Corp, Dow Silicones Corp filed Critical Dow Corning Corp
Publication of JP2004530288A publication Critical patent/JP2004530288A/ja
Publication of JP2004530288A5 publication Critical patent/JP2004530288A5/ja
Application granted granted Critical
Publication of JP4226905B2 publication Critical patent/JP4226905B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0012—Processes making use of the tackiness of the photolithographic materials, e.g. for mounting; Packaging for photolithographic material; Packages obtained by processing photolithographic materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Paints Or Removers (AREA)
JP2002566524A 2001-02-20 2002-01-17 半導体パッケージおよびその調製方法 Expired - Lifetime JP4226905B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/789,083 US6617674B2 (en) 2001-02-20 2001-02-20 Semiconductor package and method of preparing same
PCT/US2002/001263 WO2002067292A2 (en) 2001-02-20 2002-01-17 Semiconductor package and method of preparing same

Publications (3)

Publication Number Publication Date
JP2004530288A JP2004530288A (ja) 2004-09-30
JP2004530288A5 JP2004530288A5 (enExample) 2008-06-05
JP4226905B2 true JP4226905B2 (ja) 2009-02-18

Family

ID=25146536

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002566524A Expired - Lifetime JP4226905B2 (ja) 2001-02-20 2002-01-17 半導体パッケージおよびその調製方法

Country Status (11)

Country Link
US (1) US6617674B2 (enExample)
EP (1) EP1362364B1 (enExample)
JP (1) JP4226905B2 (enExample)
KR (1) KR100813821B1 (enExample)
CN (3) CN101581880B (enExample)
AT (1) ATE494629T1 (enExample)
AU (1) AU2002248357A1 (enExample)
CA (1) CA2438126A1 (enExample)
DE (1) DE60238823D1 (enExample)
TW (1) TW563210B (enExample)
WO (2) WO2002067292A2 (enExample)

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JP3910908B2 (ja) * 2002-10-29 2007-04-25 新光電気工業株式会社 半導体装置用基板及びこの製造方法、並びに半導体装置
JP3910907B2 (ja) * 2002-10-29 2007-04-25 新光電気工業株式会社 キャパシタ素子及びこの製造方法、半導体装置用基板、並びに半導体装置
US7145229B2 (en) * 2002-11-14 2006-12-05 The Regents Of The University Of California Silicone metalization
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US7682545B2 (en) * 2003-11-17 2010-03-23 Dow Corning Corporation Embossing toughened silicone resin substrates
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Also Published As

Publication number Publication date
KR100813821B1 (ko) 2008-03-17
US6617674B2 (en) 2003-09-09
CA2438126A1 (en) 2002-08-29
CN101581880A (zh) 2009-11-18
WO2002067292A2 (en) 2002-08-29
CN1820230A (zh) 2006-08-16
AU2002248357A1 (en) 2002-09-04
EP1362364B1 (en) 2011-01-05
WO2002067292A3 (en) 2002-12-19
DE60238823D1 (de) 2011-02-17
CN101581880B (zh) 2011-12-14
EP1362364A2 (en) 2003-11-19
JP2004530288A (ja) 2004-09-30
US20020158317A1 (en) 2002-10-31
WO2005017627A1 (en) 2005-02-24
KR20030080012A (ko) 2003-10-10
ATE494629T1 (de) 2011-01-15
CN1514954A (zh) 2004-07-21
TW563210B (en) 2003-11-21

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