JP5520044B2 - 低熱変形シリコーン複合体モールド - Google Patents
低熱変形シリコーン複合体モールド Download PDFInfo
- Publication number
- JP5520044B2 JP5520044B2 JP2009505523A JP2009505523A JP5520044B2 JP 5520044 B2 JP5520044 B2 JP 5520044B2 JP 2009505523 A JP2009505523 A JP 2009505523A JP 2009505523 A JP2009505523 A JP 2009505523A JP 5520044 B2 JP5520044 B2 JP 5520044B2
- Authority
- JP
- Japan
- Prior art keywords
- silicone
- silicon
- containing composition
- sio
- curable
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229920001296 polysiloxane Polymers 0.000 title claims description 121
- 239000002131 composite material Substances 0.000 title description 12
- 239000000203 mixture Substances 0.000 claims description 213
- 229920002050 silicone resin Polymers 0.000 claims description 133
- 238000000034 method Methods 0.000 claims description 95
- 239000003054 catalyst Substances 0.000 claims description 82
- 239000000758 substrate Substances 0.000 claims description 60
- 239000002657 fibrous material Substances 0.000 claims description 41
- 238000002174 soft lithography Methods 0.000 claims description 40
- 239000000835 fiber Substances 0.000 claims description 29
- 229920000642 polymer Polymers 0.000 claims description 20
- 239000011521 glass Substances 0.000 claims description 18
- 239000004971 Cross linker Substances 0.000 claims description 17
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 claims description 12
- 229920001971 elastomer Polymers 0.000 claims description 11
- 238000000151 deposition Methods 0.000 claims description 9
- 239000004744 fabric Substances 0.000 claims description 9
- 239000003112 inhibitor Substances 0.000 claims description 8
- 239000003365 glass fiber Substances 0.000 claims description 5
- 229920001843 polymethylhydrosiloxane Polymers 0.000 claims description 5
- 239000000806 elastomer Substances 0.000 claims description 4
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 221
- 229920005989 resin Polymers 0.000 description 99
- 239000011347 resin Substances 0.000 description 99
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 80
- 239000010410 layer Substances 0.000 description 77
- 238000006459 hydrosilylation reaction Methods 0.000 description 75
- 229910052710 silicon Inorganic materials 0.000 description 74
- 239000010703 silicon Substances 0.000 description 74
- 125000003342 alkenyl group Chemical group 0.000 description 71
- -1 polydimethylsiloxane Polymers 0.000 description 71
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 61
- 239000010408 film Substances 0.000 description 59
- 229920002379 silicone rubber Polymers 0.000 description 59
- 229910052751 metal Inorganic materials 0.000 description 52
- 239000002184 metal Substances 0.000 description 52
- 125000001183 hydrocarbyl group Chemical group 0.000 description 43
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 43
- 239000004945 silicone rubber Substances 0.000 description 42
- 150000003961 organosilicon compounds Chemical class 0.000 description 38
- 239000003960 organic solvent Substances 0.000 description 31
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 27
- 125000005375 organosiloxane group Chemical group 0.000 description 25
- 239000000523 sample Substances 0.000 description 24
- 229910004283 SiO 4 Inorganic materials 0.000 description 22
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 20
- 125000001931 aliphatic group Chemical group 0.000 description 19
- 229910004298 SiO 2 Inorganic materials 0.000 description 18
- 230000008901 benefit Effects 0.000 description 17
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 16
- 238000009833 condensation Methods 0.000 description 16
- 230000005494 condensation Effects 0.000 description 16
- 238000001723 curing Methods 0.000 description 16
- 229910052739 hydrogen Inorganic materials 0.000 description 15
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 15
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 15
- 238000006243 chemical reaction Methods 0.000 description 14
- 238000013461 design Methods 0.000 description 14
- 239000000463 material Substances 0.000 description 14
- 229920006136 organohydrogenpolysiloxane Polymers 0.000 description 13
- 239000001257 hydrogen Substances 0.000 description 12
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 11
- 150000001875 compounds Chemical class 0.000 description 11
- 239000004205 dimethyl polysiloxane Substances 0.000 description 11
- 229910052697 platinum Inorganic materials 0.000 description 11
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 11
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 9
- 239000007795 chemical reaction product Substances 0.000 description 9
- 238000012546 transfer Methods 0.000 description 9
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 9
- 229920002554 vinyl polymer Polymers 0.000 description 9
- 239000011248 coating agent Substances 0.000 description 8
- 238000000576 coating method Methods 0.000 description 8
- 238000000059 patterning Methods 0.000 description 8
- 229910000077 silane Inorganic materials 0.000 description 8
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 8
- 229910010271 silicon carbide Inorganic materials 0.000 description 8
- 239000002253 acid Substances 0.000 description 7
- 150000001282 organosilanes Chemical class 0.000 description 7
- 150000002978 peroxides Chemical class 0.000 description 7
- 238000002360 preparation method Methods 0.000 description 7
- 239000011541 reaction mixture Substances 0.000 description 7
- 239000005060 rubber Substances 0.000 description 7
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 6
- 239000004593 Epoxy Substances 0.000 description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 6
- 230000003197 catalytic effect Effects 0.000 description 6
- 239000003431 cross linking reagent Substances 0.000 description 6
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 6
- 229920000548 poly(silane) polymer Polymers 0.000 description 6
- 239000000047 product Substances 0.000 description 6
- 230000005855 radiation Effects 0.000 description 6
- 230000035484 reaction time Effects 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 239000012298 atmosphere Substances 0.000 description 5
- 125000004432 carbon atom Chemical group C* 0.000 description 5
- 239000002120 nanofilm Substances 0.000 description 5
- 238000007639 printing Methods 0.000 description 5
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 4
- 238000003848 UV Light-Curing Methods 0.000 description 4
- 125000002015 acyclic group Chemical group 0.000 description 4
- 238000007259 addition reaction Methods 0.000 description 4
- 125000003118 aryl group Chemical group 0.000 description 4
- 238000000429 assembly Methods 0.000 description 4
- 230000000712 assembly Effects 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 125000004122 cyclic group Chemical group 0.000 description 4
- 238000007872 degassing Methods 0.000 description 4
- 239000003085 diluting agent Substances 0.000 description 4
- 238000006073 displacement reaction Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 125000000524 functional group Chemical group 0.000 description 4
- 150000004795 grignard reagents Chemical class 0.000 description 4
- 239000011256 inorganic filler Substances 0.000 description 4
- 229910003475 inorganic filler Inorganic materials 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 229920001778 nylon Polymers 0.000 description 4
- 238000003756 stirring Methods 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- 239000005046 Chlorosilane Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- 239000004944 Liquid Silicone Rubber Substances 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 3
- 239000004677 Nylon Substances 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 3
- 239000004651 Radiation Curable Silicone Substances 0.000 description 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 239000002318 adhesion promoter Substances 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 description 3
- 238000004132 cross linking Methods 0.000 description 3
- 150000004759 cyclic silanes Chemical class 0.000 description 3
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 238000001914 filtration Methods 0.000 description 3
- 239000000499 gel Substances 0.000 description 3
- 238000005227 gel permeation chromatography Methods 0.000 description 3
- 229910052736 halogen Inorganic materials 0.000 description 3
- 125000005843 halogen group Chemical group 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229910052741 iridium Inorganic materials 0.000 description 3
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 3
- 238000002356 laser light scattering Methods 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 229910052762 osmium Inorganic materials 0.000 description 3
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 description 3
- 239000005020 polyethylene terephthalate Substances 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 3
- 239000004810 polytetrafluoroethylene Substances 0.000 description 3
- 239000002244 precipitate Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 229910052703 rhodium Inorganic materials 0.000 description 3
- 239000010948 rhodium Substances 0.000 description 3
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 3
- 229910052707 ruthenium Inorganic materials 0.000 description 3
- 239000007779 soft material Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 229920005992 thermoplastic resin Polymers 0.000 description 3
- VEDJZFSRVVQBIL-UHFFFAOYSA-N trisilane Chemical compound [SiH3][SiH2][SiH3] VEDJZFSRVVQBIL-UHFFFAOYSA-N 0.000 description 3
- ZQTYRTSKQFQYPQ-UHFFFAOYSA-N trisiloxane Chemical compound [SiH3]O[SiH2]O[SiH3] ZQTYRTSKQFQYPQ-UHFFFAOYSA-N 0.000 description 3
- KWEKXPWNFQBJAY-UHFFFAOYSA-N (dimethyl-$l^{3}-silanyl)oxy-dimethylsilicon Chemical compound C[Si](C)O[Si](C)C KWEKXPWNFQBJAY-UHFFFAOYSA-N 0.000 description 2
- VLQZJOLYNOGECD-UHFFFAOYSA-N 2,4,6-trimethyl-1,3,5,2,4,6-trioxatrisilinane Chemical compound C[SiH]1O[SiH](C)O[SiH](C)O1 VLQZJOLYNOGECD-UHFFFAOYSA-N 0.000 description 2
- GVNVAWHJIKLAGL-UHFFFAOYSA-N 2-(cyclohexen-1-yl)cyclohexan-1-one Chemical compound O=C1CCCCC1C1=CCCCC1 GVNVAWHJIKLAGL-UHFFFAOYSA-N 0.000 description 2
- MAYUMUDTQDNZBD-UHFFFAOYSA-N 2-chloroethylsilane Chemical compound [SiH3]CCCl MAYUMUDTQDNZBD-UHFFFAOYSA-N 0.000 description 2
- KSLSOBUAIFEGLT-UHFFFAOYSA-N 2-phenylbut-3-yn-2-ol Chemical compound C#CC(O)(C)C1=CC=CC=C1 KSLSOBUAIFEGLT-UHFFFAOYSA-N 0.000 description 2
- KWOLFJPFCHCOCG-UHFFFAOYSA-N Acetophenone Chemical compound CC(=O)C1=CC=CC=C1 KWOLFJPFCHCOCG-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- LHRBHFVFUACXIJ-UHFFFAOYSA-N C[SiH](C)C1=CC([SiH](C)C)=CC([SiH](C)C)=C1 Chemical compound C[SiH](C)C1=CC([SiH](C)C)=CC([SiH](C)C)=C1 LHRBHFVFUACXIJ-UHFFFAOYSA-N 0.000 description 2
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- 101150065749 Churc1 gene Proteins 0.000 description 2
- RGSFGYAAUTVSQA-UHFFFAOYSA-N Cyclopentane Chemical compound C1CCCC1 RGSFGYAAUTVSQA-UHFFFAOYSA-N 0.000 description 2
- 238000001157 Fourier transform infrared spectrum Methods 0.000 description 2
- 239000007818 Grignard reagent Substances 0.000 description 2
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- CSNNHWWHGAXBCP-UHFFFAOYSA-L Magnesium sulfate Chemical compound [Mg+2].[O-][S+2]([O-])([O-])[O-] CSNNHWWHGAXBCP-UHFFFAOYSA-L 0.000 description 2
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 2
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 2
- OFBQJSOFQDEBGM-UHFFFAOYSA-N Pentane Chemical compound CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 2
- 102100038239 Protein Churchill Human genes 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- YKSADNUOSVJOAS-UHFFFAOYSA-N [bis[(dimethyl-$l^{3}-silanyl)oxy]-phenylsilyl]oxy-dimethylsilicon Chemical compound C[Si](C)O[Si](O[Si](C)C)(O[Si](C)C)C1=CC=CC=C1 YKSADNUOSVJOAS-UHFFFAOYSA-N 0.000 description 2
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 2
- 150000001350 alkyl halides Chemical class 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 239000003963 antioxidant agent Substances 0.000 description 2
- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Chemical compound [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 description 2
- ISAOCJYIOMOJEB-UHFFFAOYSA-N benzoin Chemical compound C=1C=CC=CC=1C(O)C(=O)C1=CC=CC=C1 ISAOCJYIOMOJEB-UHFFFAOYSA-N 0.000 description 2
- QARVLSVVCXYDNA-UHFFFAOYSA-N bromobenzene Chemical compound BrC1=CC=CC=C1 QARVLSVVCXYDNA-UHFFFAOYSA-N 0.000 description 2
- OSGAYBCDTDRGGQ-UHFFFAOYSA-L calcium sulfate Chemical compound [Ca+2].[O-]S([O-])(=O)=O OSGAYBCDTDRGGQ-UHFFFAOYSA-L 0.000 description 2
- 239000003060 catalysis inhibitor Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 125000001309 chloro group Chemical group Cl* 0.000 description 2
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 229910002026 crystalline silica Inorganic materials 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- VDCSGNNYCFPWFK-UHFFFAOYSA-N diphenylsilane Chemical compound C=1C=CC=CC=1[SiH2]C1=CC=CC=C1 VDCSGNNYCFPWFK-UHFFFAOYSA-N 0.000 description 2
- SCTQCPWFWDWNTC-UHFFFAOYSA-N diphenylsilyloxy(diphenyl)silane Chemical compound C=1C=CC=CC=1[SiH](C=1C=CC=CC=1)O[SiH](C=1C=CC=CC=1)C1=CC=CC=C1 SCTQCPWFWDWNTC-UHFFFAOYSA-N 0.000 description 2
- 238000004821 distillation Methods 0.000 description 2
- SNRUBQQJIBEYMU-UHFFFAOYSA-N dodecane Chemical compound CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 description 2
- BITPLIXHRASDQB-UHFFFAOYSA-N ethenyl-[ethenyl(dimethyl)silyl]oxy-dimethylsilane Chemical compound C=C[Si](C)(C)O[Si](C)(C)C=C BITPLIXHRASDQB-UHFFFAOYSA-N 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000007062 hydrolysis Effects 0.000 description 2
- 238000006460 hydrolysis reaction Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000004005 microsphere Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 150000001451 organic peroxides Chemical class 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000000049 pigment Substances 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 238000000746 purification Methods 0.000 description 2
- 238000010992 reflux Methods 0.000 description 2
- 150000004756 silanes Chemical class 0.000 description 2
- 150000003377 silicon compounds Chemical class 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 239000000725 suspension Substances 0.000 description 2
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 2
- 230000000930 thermomechanical effect Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 2
- 238000004073 vulcanization Methods 0.000 description 2
- MUTGBJKUEZFXGO-OLQVQODUSA-N (3as,7ar)-3a,4,5,6,7,7a-hexahydro-2-benzofuran-1,3-dione Chemical compound C1CCC[C@@H]2C(=O)OC(=O)[C@@H]21 MUTGBJKUEZFXGO-OLQVQODUSA-N 0.000 description 1
- KMOUUZVZFBCRAM-OLQVQODUSA-N (3as,7ar)-3a,4,7,7a-tetrahydro-2-benzofuran-1,3-dione Chemical compound C1C=CC[C@@H]2C(=O)OC(=O)[C@@H]21 KMOUUZVZFBCRAM-OLQVQODUSA-N 0.000 description 1
- HMVBQEAJQVQOTI-SOFGYWHQSA-N (e)-3,5-dimethylhex-3-en-1-yne Chemical compound CC(C)\C=C(/C)C#C HMVBQEAJQVQOTI-SOFGYWHQSA-N 0.000 description 1
- GRGVQLWQXHFRHO-AATRIKPKSA-N (e)-3-methylpent-3-en-1-yne Chemical compound C\C=C(/C)C#C GRGVQLWQXHFRHO-AATRIKPKSA-N 0.000 description 1
- UOCLXMDMGBRAIB-UHFFFAOYSA-N 1,1,1-trichloroethane Chemical compound CC(Cl)(Cl)Cl UOCLXMDMGBRAIB-UHFFFAOYSA-N 0.000 description 1
- WZCQRUWWHSTZEM-UHFFFAOYSA-N 1,3-phenylenediamine Chemical compound NC1=CC=CC(N)=C1 WZCQRUWWHSTZEM-UHFFFAOYSA-N 0.000 description 1
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- GWQOYRSARAWVTC-UHFFFAOYSA-N 1,4-bis(2-tert-butylperoxypropan-2-yl)benzene Chemical compound CC(C)(C)OOC(C)(C)C1=CC=C(C(C)(C)OOC(C)(C)C)C=C1 GWQOYRSARAWVTC-UHFFFAOYSA-N 0.000 description 1
- 125000001140 1,4-phenylene group Chemical group [H]C1=C([H])C([*:2])=C([H])C([H])=C1[*:1] 0.000 description 1
- QYLFHLNFIHBCPR-UHFFFAOYSA-N 1-ethynylcyclohexan-1-ol Chemical compound C#CC1(O)CCCCC1 QYLFHLNFIHBCPR-UHFFFAOYSA-N 0.000 description 1
- VILCJCGEZXAXTO-UHFFFAOYSA-N 2,2,2-tetramine Chemical compound NCCNCCNCCN VILCJCGEZXAXTO-UHFFFAOYSA-N 0.000 description 1
- 125000004206 2,2,2-trifluoroethyl group Chemical group [H]C([H])(*)C(F)(F)F 0.000 description 1
- DMWVYCCGCQPJEA-UHFFFAOYSA-N 2,5-bis(tert-butylperoxy)-2,5-dimethylhexane Chemical compound CC(C)(C)OOC(C)(C)CCC(C)(C)OOC(C)(C)C DMWVYCCGCQPJEA-UHFFFAOYSA-N 0.000 description 1
- XMNIXWIUMCBBBL-UHFFFAOYSA-N 2-(2-phenylpropan-2-ylperoxy)propan-2-ylbenzene Chemical compound C=1C=CC=CC=1C(C)(C)OOC(C)(C)C1=CC=CC=C1 XMNIXWIUMCBBBL-UHFFFAOYSA-N 0.000 description 1
- HVOBSBRYQIYZNY-UHFFFAOYSA-N 2-[2-(2-aminoethylamino)ethylamino]ethanol Chemical compound NCCNCCNCCO HVOBSBRYQIYZNY-UHFFFAOYSA-N 0.000 description 1
- DGZKNRWILMSAAJ-UHFFFAOYSA-N 2-[2-[2-aminoethyl(2-hydroxyethyl)amino]ethylamino]ethanol Chemical compound NCCN(CCO)CCNCCO DGZKNRWILMSAAJ-UHFFFAOYSA-N 0.000 description 1
- FRWYFWZENXDZMU-UHFFFAOYSA-N 2-iodoquinoline Chemical compound C1=CC=CC2=NC(I)=CC=C21 FRWYFWZENXDZMU-UHFFFAOYSA-N 0.000 description 1
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 description 1
- 125000004493 2-methylbut-1-yl group Chemical group CC(C*)CC 0.000 description 1
- 125000000094 2-phenylethyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 1
- BIISIZOQPWZPPS-UHFFFAOYSA-N 2-tert-butylperoxypropan-2-ylbenzene Chemical compound CC(C)(C)OOC(C)(C)C1=CC=CC=C1 BIISIZOQPWZPPS-UHFFFAOYSA-N 0.000 description 1
- NECRQCBKTGZNMH-UHFFFAOYSA-N 3,5-dimethylhex-1-yn-3-ol Chemical compound CC(C)CC(C)(O)C#C NECRQCBKTGZNMH-UHFFFAOYSA-N 0.000 description 1
- WVRNUXJQQFPNMN-VAWYXSNFSA-N 3-[(e)-dodec-1-enyl]oxolane-2,5-dione Chemical compound CCCCCCCCCC\C=C\C1CC(=O)OC1=O WVRNUXJQQFPNMN-VAWYXSNFSA-N 0.000 description 1
- 125000003542 3-methylbutan-2-yl group Chemical group [H]C([H])([H])C([H])(*)C([H])(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- YBRVSVVVWCFQMG-UHFFFAOYSA-N 4,4'-diaminodiphenylmethane Chemical compound C1=CC(N)=CC=C1CC1=CC=C(N)C=C1 YBRVSVVVWCFQMG-UHFFFAOYSA-N 0.000 description 1
- 239000005995 Aluminium silicate Substances 0.000 description 1
- DJHGAFSJWGLOIV-UHFFFAOYSA-K Arsenate3- Chemical class [O-][As]([O-])([O-])=O DJHGAFSJWGLOIV-UHFFFAOYSA-K 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- OMPJBNCRMGITSC-UHFFFAOYSA-N Benzoylperoxide Chemical compound C=1C=CC=CC=1C(=O)OOC(=O)C1=CC=CC=C1 OMPJBNCRMGITSC-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- RPNUMPOLZDHAAY-UHFFFAOYSA-N Diethylenetriamine Chemical compound NCCNCCN RPNUMPOLZDHAAY-UHFFFAOYSA-N 0.000 description 1
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical class S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 1
- 206010073306 Exposure to radiation Diseases 0.000 description 1
- NHTMVDHEPJAVLT-UHFFFAOYSA-N Isooctane Chemical compound CC(C)CC(C)(C)C NHTMVDHEPJAVLT-UHFFFAOYSA-N 0.000 description 1
- 229920000271 Kevlar® Polymers 0.000 description 1
- 239000002841 Lewis acid Substances 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 1
- 229920000784 Nomex Polymers 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- YGHFDTDSFZTYBW-UHFFFAOYSA-N O-silylhydroxylamine Chemical class NO[SiH3] YGHFDTDSFZTYBW-UHFFFAOYSA-N 0.000 description 1
- LGRFSURHDFAFJT-UHFFFAOYSA-N Phthalic anhydride Natural products C1=CC=C2C(=O)OC(=O)C2=C1 LGRFSURHDFAFJT-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 229910018557 Si O Inorganic materials 0.000 description 1
- 229910007991 Si-N Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910006294 Si—N Inorganic materials 0.000 description 1
- 244000028419 Styrax benzoin Species 0.000 description 1
- 235000000126 Styrax benzoin Nutrition 0.000 description 1
- 235000008411 Sumatra benzointree Nutrition 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- 239000012963 UV stabilizer Substances 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- JOPQCTQPHGGFQZ-UHFFFAOYSA-N [SiH4].C(C)(=O)N Chemical compound [SiH4].C(C)(=O)N JOPQCTQPHGGFQZ-UHFFFAOYSA-N 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 125000003647 acryloyl group Chemical group O=C([*])C([H])=C([H])[H] 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 150000001338 aliphatic hydrocarbons Chemical class 0.000 description 1
- 125000002877 alkyl aryl group Chemical group 0.000 description 1
- RREGISFBPQOLTM-UHFFFAOYSA-N alumane;trihydrate Chemical compound O.O.O.[AlH3] RREGISFBPQOLTM-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 235000012211 aluminium silicate Nutrition 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- IMUDHTPIFIBORV-UHFFFAOYSA-N aminoethylpiperazine Chemical compound NCCN1CCNCC1 IMUDHTPIFIBORV-UHFFFAOYSA-N 0.000 description 1
- 150000008064 anhydrides Chemical class 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229920006231 aramid fiber Polymers 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 229940000489 arsenate Drugs 0.000 description 1
- 125000003710 aryl alkyl group Chemical group 0.000 description 1
- 239000010425 asbestos Substances 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 229960002130 benzoin Drugs 0.000 description 1
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 1
- 239000012965 benzophenone Substances 0.000 description 1
- 235000019400 benzoyl peroxide Nutrition 0.000 description 1
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 1
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229920001400 block copolymer Polymers 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000001680 brushing effect Effects 0.000 description 1
- 125000004369 butenyl group Chemical group C(=CCC)* 0.000 description 1
- JHIWVOJDXOSYLW-UHFFFAOYSA-N butyl 2,2-difluorocyclopropane-1-carboxylate Chemical compound CCCCOC(=O)C1CC1(F)F JHIWVOJDXOSYLW-UHFFFAOYSA-N 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- XSDCTSITJJJDPY-UHFFFAOYSA-N chloro-ethenyl-dimethylsilane Chemical compound C[Si](C)(Cl)C=C XSDCTSITJJJDPY-UHFFFAOYSA-N 0.000 description 1
- 125000000068 chlorophenyl group Chemical group 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 230000000536 complexating effect Effects 0.000 description 1
- 238000006482 condensation reaction Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- 125000001511 cyclopentyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 125000002704 decyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- JQZRVMZHTADUSY-UHFFFAOYSA-L di(octanoyloxy)tin Chemical compound [Sn+2].CCCCCCCC([O-])=O.CCCCCCCC([O-])=O JQZRVMZHTADUSY-UHFFFAOYSA-L 0.000 description 1
- LSXWFXONGKSEMY-UHFFFAOYSA-N di-tert-butyl peroxide Chemical compound CC(C)(C)OOC(C)(C)C LSXWFXONGKSEMY-UHFFFAOYSA-N 0.000 description 1
- 125000005520 diaryliodonium group Chemical group 0.000 description 1
- AYOHIQLKSOJJQH-UHFFFAOYSA-N dibutyltin Chemical class CCCC[Sn]CCCC AYOHIQLKSOJJQH-UHFFFAOYSA-N 0.000 description 1
- 125000004188 dichlorophenyl group Chemical group 0.000 description 1
- QGBSISYHAICWAH-UHFFFAOYSA-N dicyandiamide Chemical compound NC(N)=NC#N QGBSISYHAICWAH-UHFFFAOYSA-N 0.000 description 1
- JVSWJIKNEAIKJW-UHFFFAOYSA-N dimethyl-hexane Natural products CCCCCC(C)C JVSWJIKNEAIKJW-UHFFFAOYSA-N 0.000 description 1
- XXBDWLFCJWSEKW-UHFFFAOYSA-N dimethylbenzylamine Chemical compound CN(C)CC1=CC=CC=C1 XXBDWLFCJWSEKW-UHFFFAOYSA-N 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- POULHZVOKOAJMA-UHFFFAOYSA-M dodecanoate Chemical compound CCCCCCCCCCCC([O-])=O POULHZVOKOAJMA-UHFFFAOYSA-M 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- JDVIRCVIXCMTPU-UHFFFAOYSA-N ethanamine;trifluoroborane Chemical compound CCN.FB(F)F JDVIRCVIXCMTPU-UHFFFAOYSA-N 0.000 description 1
- NKSJNEHGWDZZQF-UHFFFAOYSA-N ethenyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C=C NKSJNEHGWDZZQF-UHFFFAOYSA-N 0.000 description 1
- 125000001033 ether group Chemical group 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 239000010433 feldspar Substances 0.000 description 1
- 239000003063 flame retardant Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 235000019382 gum benzoic Nutrition 0.000 description 1
- 239000012760 heat stabilizer Substances 0.000 description 1
- DMEGYFMYUHOHGS-UHFFFAOYSA-N heptamethylene Natural products C1CCCCCC1 DMEGYFMYUHOHGS-UHFFFAOYSA-N 0.000 description 1
- 125000003187 heptyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000006038 hexenyl group Chemical group 0.000 description 1
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 125000000743 hydrocarbylene group Chemical group 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 229920000592 inorganic polymer Polymers 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
- 125000001972 isopentyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- NLYAJNPCOHFWQQ-UHFFFAOYSA-N kaolin Chemical compound O.O.O=[Al]O[Si](=O)O[Si](=O)O[Al]=O NLYAJNPCOHFWQQ-UHFFFAOYSA-N 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 229940070765 laurate Drugs 0.000 description 1
- 239000011133 lead Substances 0.000 description 1
- 150000007517 lewis acids Chemical class 0.000 description 1
- 239000003446 ligand Substances 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 229940018564 m-phenylenediamine Drugs 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 229910052943 magnesium sulfate Inorganic materials 0.000 description 1
- 235000019341 magnesium sulphate Nutrition 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- AUHZEENZYGFFBQ-UHFFFAOYSA-N mesitylene Substances CC1=CC(C)=CC(C)=C1 AUHZEENZYGFFBQ-UHFFFAOYSA-N 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 125000000325 methylidene group Chemical group [H]C([H])=* 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- 238000011415 microwave curing Methods 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 description 1
- 229910052982 molybdenum disulfide Inorganic materials 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 125000001624 naphthyl group Chemical group 0.000 description 1
- 125000001971 neopentyl group Chemical group [H]C([*])([H])C(C([H])([H])[H])(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000004763 nomex Substances 0.000 description 1
- 239000004745 nonwoven fabric Substances 0.000 description 1
- 125000001400 nonyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000004365 octenyl group Chemical group C(=CCCCCCC)* 0.000 description 1
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229940049964 oleate Drugs 0.000 description 1
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 125000000962 organic group Chemical group 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 1
- 125000000843 phenylene group Chemical group C1(=C(C=CC=C1)*)* 0.000 description 1
- 239000003504 photosensitizing agent Substances 0.000 description 1
- 230000010399 physical interaction Effects 0.000 description 1
- 239000003495 polar organic solvent Substances 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000768 polyamine Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000002028 premature Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000003847 radiation curing Methods 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 239000012779 reinforcing material Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052895 riebeckite Inorganic materials 0.000 description 1
- 239000011435 rock Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 125000003548 sec-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical class [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 150000004760 silicates Chemical class 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- UQMGAWUIVYDWBP-UHFFFAOYSA-N silyl acetate Chemical class CC(=O)O[SiH3] UQMGAWUIVYDWBP-UHFFFAOYSA-N 0.000 description 1
- 125000005353 silylalkyl group Chemical group 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- PXQLVRUNWNTZOS-UHFFFAOYSA-N sulfanyl Chemical class [SH] PXQLVRUNWNTZOS-UHFFFAOYSA-N 0.000 description 1
- WQSRXNAKUYIVET-UHFFFAOYSA-N sulfuric acid;zinc Chemical compound [Zn].OS(O)(=O)=O WQSRXNAKUYIVET-UHFFFAOYSA-N 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- GJBRNHKUVLOCEB-UHFFFAOYSA-N tert-butyl benzenecarboperoxoate Chemical compound CC(C)(C)OOC(=O)C1=CC=CC=C1 GJBRNHKUVLOCEB-UHFFFAOYSA-N 0.000 description 1
- SWAXTRYEYUTSAP-UHFFFAOYSA-N tert-butyl ethaneperoxoate Chemical compound CC(=O)OOC(C)(C)C SWAXTRYEYUTSAP-UHFFFAOYSA-N 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 125000003944 tolyl group Chemical group 0.000 description 1
- 238000000411 transmission spectrum Methods 0.000 description 1
- ITMCEJHCFYSIIV-UHFFFAOYSA-N triflic acid Chemical compound OS(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-N 0.000 description 1
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 1
- 239000010456 wollastonite Substances 0.000 description 1
- 229910052882 wollastonite Inorganic materials 0.000 description 1
- 239000002759 woven fabric Substances 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 125000005023 xylyl group Chemical group 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/0481—Encapsulation of modules characterised by the composition of the encapsulation material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C33/00—Moulds or cores; Details thereof or accessories therefor
- B29C33/38—Moulds or cores; Details thereof or accessories therefor characterised by the material or the manufacturing process
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C37/00—Component parts, details, accessories or auxiliary operations, not covered by group B29C33/00 or B29C35/00
- B29C37/006—Degassing moulding material or draining off gas during moulding
- B29C37/0064—Degassing moulding material or draining off gas during moulding of reinforced material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
- C08L83/04—Polysiloxanes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/12—Polysiloxanes containing silicon bound to hydrogen
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/20—Polysiloxanes containing silicon bound to unsaturated aliphatic groups
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/54—Silicon-containing compounds
- C08K5/541—Silicon-containing compounds containing oxygen
- C08K5/5425—Silicon-containing compounds containing oxygen containing at least one C=C bond
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Nanotechnology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Health & Medical Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Organic Chemistry (AREA)
- Polymers & Plastics (AREA)
- Medicinal Chemistry (AREA)
- Sustainable Development (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Mechanical Engineering (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Reinforced Plastic Materials (AREA)
- Processes Of Treating Macromolecular Substances (AREA)
Description
(Vi2MeSiO1/2)0.25(PhSiO3/2)0.75、(ViMe2SiO1/2)0.25(PhSiO3/2)0.75、(ViMe2SiO1/2)0.25(MeSiO3/2)0.25(PhSiO3/2)0.50、(ViMe2SiO1/2)0.15(PhSiO3/2)0.75(SiO4/2)0.1、及び(Vi2MeSiO1/2)0.15(ViMe2SiO1/2)0.1(PhSiO3/2)0.75の式(式中、Meはメチルであり、Viはビニルであり、Phはフェニルであり、また括弧の外の下付き数字はモル分率を指す)で表される樹脂が含まれるが、これらに限定されない。また、上記式において、単位の順番は不特定である。
(gは1から6である)から選択される式で表される)で表すことができる。R1で表されるヒドロカルビル基及びハロゲン置換ヒドロカルビル基は、成分(A)のシリコーン樹脂に対して上で定義され例示された通りである。
−CH2CH2SiMe2H、
−CH2CH2SiMe2CnH2nSiMe2H、
−CH2CH2SiMe2CnH2nSiMePhH、
−CH2CH2SiMePhH、
−CH2CH2SiPh2H、
−CH2CH2SiMePhCnH2nSiPh2H、
−CH2CH2SiMePhCnH2nSiMe2H、
−CH2CH2SiMePhOSiMePhH、及び
−CH2CH2SiMePhOSiPh(OSiMePhH)2の式(式中、Meはメチルであり、Phはフェニルであり、下付き文字nは2から10の値を有する)で表される基が含まれるが、これらに限定されない。
((HMe2SiC6H4SiMe2CH2CH2)2MeSiO1/2)0.12(PhSiO3/2)0.88、
((HMe2SiC6H4SiMe2CH2CH2)2MeSiO1/2)0.17(PhSiO3/2)0.83、
((HMe2SiC6H4SiMe2CH2CH2)2MeSiO1/2)0.17(MeSiO3/2)0.17(PhSiO3/2)0.66、
((HMe2SiC6H4SiMe2CH2CH2)2MeSiO1/2)0.15(PhSiO3/2)0.75(SiO4/2)0.10、及び
((HMe2SiC6H4SiMe2CH2CH2)2MeSiO1/2)0.08((HMe2SiC6H4SiMe2CH2CH2)Me2SiO1/2)0.06(PhSiO3/2)0.86の式(式中、Meはメチルであり、Phはフェニルであり、C6H4はパラ−フェニレン基を指し、また括弧の外の下付き数字はモル分率を指す)で表される樹脂が含まれるが、これらに限定されない。また、上記式において、単位の順番は不特定である。
(HMe2SiO1/2)0.25(PhSiO3/2)0.75、(HMeSiO2/2)0.3(PhSiO3/2)0.6(MeSiO3/2)0.1、及び(Me3SiO1/2)0.1(H2SiO2/2)0.1(MeSiO3/2)0.4(PhSiO3/2)0.4(式中、Meはメチルであり、Phはフェニルであり、括弧の外の下付き数字はモル分率を指す)の式で表される樹脂が含まれるが、これらに限定されない。また、上記式において、単位の順番は不特定である。
Vi4Si、PhSiVi3、MeSiVi3、PhMeSiVi2、Ph2SiVi2、及びPhSi(CH2CH=CH2)3(式中、Meはメチルであり、Phはフェニルであり、Viはビニルである)の式で表されるシランが含まれるが、これらに限定されない。
PhSi(OSiMe2H)3、Si(OSiMe2H)4、MeSi(OSiMe2H)3、及びPh2Si(OSiMe2H)2(式中、Meはメチルであり、Phはフェニルである)の式で表されるシロキサンが含まれるが、これらに限定されない。
ViMe2SiO(Me2SiO)aSiMe2Vi、ViMe2SiO(Ph2SiO)aSiMe2Vi、及びViMe2SiO(PhMeSiO)aSiMe2Vi(式中、Meはメチルであり、Phはフェニルであり、Viはビニルであり、下付き文字aは1から4の値を有する)の式で表されるシリコーンゴムが含まれるが、これらに限定されない。
HMe2SiO(Me2SiO)bSiMe2H、HMe2SiO(Ph2SiO)bSiMe2H、HMe2SiO(PhMeSiO)bSiMe2H及びHMe2SiO(Ph2SiO)2(Me2SiO)2SiMe2H(式中、Meはメチルであり、Phはフェニルであり、下付き文字bは1から4の値を有する)の式で表されるシリコーンゴムが含まれるが、これらに限定されない。
HMe2SiO(Me2SiO)50SiMe2H、HMe2SiO(Me2SiO)10SiMe2H、HMe2SiO(PhMeSiO)25SiMe2H、及びMe3SiO(MeHSiO)10SiMe3(式中、Meはメチルであり、Phはフェニルであり、下付き数字はシロキサン単位の各種類の数を示す)の式で表されるシリコーンゴムが含まれるが、これらに限定されない。
ViMe2SiO(Me2SiO)50SiMe2Vi、ViMe2SiO(Me2SiO)10SiMe2Vi、ViMe2SiO(PhMeSiO)25SiMe2Vi、及びVi2MeSiO(PhMeSiO)25SiMe2Vi(式中、Meはメチルであり、Phはフェニルであり、Viはビニルであり、下付き数字はシロキサン単位の各種類の数を示す)の式で表されるシリコーンゴムが含まれるが、これらに限定されない。
(ViMeSiO)3、(ViMeSiO)4、(ViMeSiO)5、(ViMeSiO)6、(ViPhSiO)3、(ViPhSiO)4、(ViPhSiO)5、(ViPhSiO)6、ViMe2SiO(ViMeSiO)nSiMe2Vi、Me3SiO(ViMeSiO)nSiMe3、及び(ViMe2SiO)4Si(式中、Meはメチルであり、Phはフェニルであり、Viはビニルであり、下付き文字nは、有機シロキサンが25℃で0.001Pa・sから2Pa・sの粘度を有するような値を有する)の式で表される有機シロキサンが含まれるが、これらに限定されない。
PhSi(OSiMe2H)3、Si(OSiMe2H)4、MeSi(OSiMe2H)3、(HMe2SiO)3SiOSi(OSiMe2H)3、及び(HMe2SiO)3SiOSi(Ph)(OSiMe2H)2(式中、Meはメチルであり、Phはフェニルである)の式で表される有機水素シロキサンが含まれるが、これらに限定されない。
Claims (15)
- 少なくとも1つの形状を含むソフトリソグラフィーモールドを形成する方法であって、
揮発成分除去ポリマーと少なくとも1種の揮発成分除去架橋剤とを使用して形成される硬化性弾性シリコーン含有組成物の第1の側面上に、前記少なくとも1つの形状を表すパターンを形成するステップ
を含む方法。 - 前記揮発成分除去ポリマーが、ポリマーから揮発成分を除去するために真空及び熱のうち少なくとも1つに曝露されたポリマーを含み、揮発成分除去ビニル官能性シロキサンポリマーを含む、請求項1に記載の方法。
- 前記揮発成分除去架橋剤が、架橋剤から揮発成分を除去するために真空及び熱のうち少なくとも1つに曝露された架橋剤を含み、SiH官能基を有する揮発成分除去メチル水素シロキサンポリマーを含む、請求項1に記載の方法。
- 少なくとも1種の阻害剤と少なくとも1種の触媒とを含み、前記触媒は0.1ppmから1000ppmの濃度を有し、前記触媒に対する前記阻害剤のモル比は0.5から500である、請求項1に記載の方法。
- 前記硬化性弾性シリコーン含有組成物に前記硬化性弾性シリコーン含有組成物の第2の側面の近くで繊維性材料を含浸させるステップを含む、請求項1に記載の方法。
- 前記硬化性弾性シリコーン含有組成物に含浸させるステップが、複数のすきまによって隔てられた複数のガラス繊維を含むガラス布中又は該ガラス布上に、前記硬化性弾性シリコーン含有組成物を堆積しているステップを含む、請求項5に記載の方法。
- 少なくとも部分的に硬化された繊維強化支持層を形成するステップであって、前記硬化性弾性シリコーン含有組成物の一部は前記繊維強化支持層と隣接するように堆積するステップを更 に含む、請求項1に記載の方法。
- 前記繊維強化支持層を形成するステップが、
揮発成分除去ポリマーと少なくとも1種の揮発成分除去架橋剤とを使用して形成される硬化性弾性シリコーン含有組成物の第1の層を形成するステップと、
繊維性材料の第1の側面が前記第1の層に隣接するように前記繊維性材料を配置するステップと、
前記繊維性材料の第2の側面に隣接して前記硬化性弾性シリコーン含有組成物の第2の層を形成するステップであって、前記第2の側面は前記第1の側面に対置するステップと、
前記第1及び第2の層を少なくとも部分的に硬化させるステップと
を含む、請求項7に記載の方法。 - 前記繊維性材料を配置するステップが、複数のすきまによって隔てられた複数のガラス繊維を含むガラス布を配置するステップを含む、請求項8に記載の方法。
- 前記パターンを形成するステップが、前記繊維強化支持層の一部に隣接して硬化性弾性シリコーン含有組成物を堆積させるステップを含み、前記硬化性弾性シリコーン含有組成物が、前記繊維強化支持層の一部に隣接して、揮発成分除去シリコーン樹脂と揮発成分除去架橋剤とを含む、請求項9に記載の方法。
- 予備硬化済シリコーン樹脂フィルムを形成するステップであって、前記硬化性弾性シリコーン含有組成物の一部は前記予備硬化済シリコーン樹脂フィルムに隣接して堆積されるステップを更に含む、請求項1に記載の方法。
- 前記予備硬化済シリコーン樹脂フィルムを形成するステップが、
硬化性弾性シリコーン含有組成物を基板の上に堆積させるステップであって、硬化性弾性シリコーン含有組成物が揮発成分除去シリコーン樹脂を含むステップと、
前記硬化性弾性シリコーン含有組成物を硬化させるステップと
を含む、請求項11に記載の方法。 - 前記パターンを形成するステップが、前記予備硬化済シリコーン樹脂フィルムの一部に隣接して硬化性弾性シリコーン含有組成物を堆積させるステップを含む、請求項11に記載の方法。
- 前記硬化性弾性シリコーン含有組成物を堆積させるステップが、前記予備硬化済シリコーン樹脂フィルムの一部に隣接して、揮発成分除去ポリマーと揮発成分除去架橋剤とを堆積させるステップを含む、請求項13に記載の方法。
- 前記パターンを形成するステップが、
前記硬化性弾性シリコーン含有組成物の一部をマスターパターンに接触させるステップと、
少なくとも部分的に硬化性弾性シリコーン含有組成物を硬化させるステップと、
前記マスターパターンを、前記少なくとも部分的に硬化された硬化性弾性シリコーン含有組成物との接触から解除するステップと、
エラストマーを形成するために、前記少なくとも部分的に硬化された硬化性弾性シリコーン含有組成物を硬化させるステップと、
前記エラストマーに形成された前記パターンを使用して、基板上にパターンを形成するステップと
を含む、請求項1に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US79118206P | 2006-04-11 | 2006-04-11 | |
US60/791,182 | 2006-04-11 | ||
PCT/US2007/063651 WO2007121006A2 (en) | 2006-04-11 | 2007-03-09 | Low thermal distortion silicone composite molds |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009533531A JP2009533531A (ja) | 2009-09-17 |
JP5520044B2 true JP5520044B2 (ja) | 2014-06-11 |
Family
ID=38610282
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009505523A Expired - Fee Related JP5520044B2 (ja) | 2006-04-11 | 2007-03-09 | 低熱変形シリコーン複合体モールド |
Country Status (6)
Country | Link |
---|---|
US (2) | US8795560B2 (ja) |
EP (1) | EP2005248A2 (ja) |
JP (1) | JP5520044B2 (ja) |
KR (1) | KR101358066B1 (ja) |
CN (1) | CN101449206A (ja) |
WO (1) | WO2007121006A2 (ja) |
Families Citing this family (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8092910B2 (en) | 2005-02-16 | 2012-01-10 | Dow Corning Toray Co., Ltd. | Reinforced silicone resin film and method of preparing same |
WO2006088645A1 (en) | 2005-02-16 | 2006-08-24 | Dow Corning Corporation | Reinforced silicone resin film and method of preparing same |
US8334022B2 (en) | 2005-08-04 | 2012-12-18 | Dow Corning Corporation | Reinforced silicone resin film and method of preparing same |
EP1969065B1 (en) | 2005-12-21 | 2011-07-27 | Dow Corning Corporation | Silicone resin film, method of preparing same, and nanomaterial-filled silicone composition |
WO2008051242A2 (en) | 2006-01-19 | 2008-05-02 | Dow Corning Corporation | Silicone resin film, method of preparing same, and nanomaterial-filled silicone compositon |
WO2007097835A2 (en) | 2006-02-20 | 2007-08-30 | Dow Corning Corporation | Silicone resin film, method of preparing same, and nanomaterial-filled silicone composition |
WO2008088570A1 (en) | 2006-04-18 | 2008-07-24 | Itn Energy Systems, Inc. | Reinforcing structures for thin-film photovoltaic device substrates, and associated methods |
WO2008036769A2 (en) | 2006-09-19 | 2008-03-27 | Itn Energy Systems, Inc. | Semi-transparent dual layer back contact for bifacial and tandem junction thin-film photovolataic devices |
CN101626893B (zh) | 2007-02-22 | 2013-07-03 | 道康宁公司 | 增强硅树脂膜 |
CN101646559A (zh) | 2007-02-22 | 2010-02-10 | 陶氏康宁公司 | 具有优良的耐火性和抗冲击性的复合制品及其制备方法 |
EP2203387A2 (en) | 2007-10-12 | 2010-07-07 | Dow Corning Corporation | Aluminum oxide dispersion and method of preparing same |
EP2288662B1 (en) | 2008-06-06 | 2014-07-30 | Koninklijke Philips N.V. | Silicone rubber material for soft lithography |
JP5343682B2 (ja) * | 2009-04-23 | 2013-11-13 | 大日本印刷株式会社 | インプリント用モールドおよびその製造方法 |
CN103635330B (zh) * | 2011-06-30 | 2016-06-29 | 3M创新有限公司 | 用于制备、着墨和安装用于微接触印刷的压模的方法 |
JP6309898B2 (ja) * | 2012-01-16 | 2018-04-11 | ダウ シリコーンズ コーポレーション | 光学物品及び形成方法 |
JP5953126B2 (ja) * | 2012-05-30 | 2016-07-20 | 東芝機械株式会社 | 型および型の製造方法 |
CN102707378B (zh) * | 2012-06-12 | 2013-09-04 | 华南师范大学 | 一种应用压印技术制作硅酮微纳光学结构的方法 |
WO2014084030A1 (ja) * | 2012-11-27 | 2014-06-05 | 株式会社ダイセル | 微細構造体の製造方法及びナノインプリント用光硬化性組成物 |
JP6046505B2 (ja) * | 2013-01-29 | 2016-12-14 | 株式会社ダイセル | シート状モールド及びその製造方法並びにその用途 |
US9193199B2 (en) * | 2013-11-20 | 2015-11-24 | Eastman Kodak Company | PDMS imprinting stamp with embedded flexure |
US9513543B2 (en) * | 2013-11-20 | 2016-12-06 | Eastman Kodak Company | Method for forming a non-deformable patterned template |
US20150140156A1 (en) * | 2013-11-20 | 2015-05-21 | Thomas W. Palone | Non-deformable patterned template |
CN104098908B (zh) * | 2014-06-25 | 2016-08-31 | 李华顺 | 铂化合物与胺并用配制阻燃性混炼硅橡胶 |
JP6658295B2 (ja) * | 2016-05-19 | 2020-03-04 | 株式会社オートネットワーク技術研究所 | 止水用シリコーンゴム組成物、止水用シリコーンゴム成形体およびワイヤーハーネス |
RU2741506C2 (ru) * | 2016-07-27 | 2021-01-26 | Конинклейке Филипс Н.В. | Способ получения штампа на основе полиорганосилоксанов, штамп на основе полиорганосилоксанов, применение его для процесса печати и способ впечатывания с его использованием |
MX2019006512A (es) * | 2016-12-22 | 2019-10-02 | Illumina Inc | Aparato de impresion. |
KR102176432B1 (ko) * | 2017-02-13 | 2020-11-09 | 주식회사 엘지화학 | 원통형 이차 전지 절연부재 |
WO2020052749A1 (en) * | 2018-09-12 | 2020-03-19 | Applied Materials, Inc. | Method of manufacturing a stamp for imprint lithography, stamp for imprint lithography, imprint roller and roll-to-roll substrate processing apparatus |
EP3850433A1 (en) * | 2018-09-12 | 2021-07-21 | Applied Materials, Inc. | Method of manufacturing a stamp for imprint lithography, stamp for imprint lithography, imprint roller and roll-to-roll substrate processing apparatus |
WO2020074709A1 (en) * | 2018-10-12 | 2020-04-16 | Morphotonics B.V. | Flexible stamp with tunable high dimensional stability |
KR20210148133A (ko) * | 2019-03-29 | 2021-12-07 | 다이니폰 인사츠 가부시키가이샤 | 임프린트용 광경화성 수지 조성물, 임프린트용 광경화성 수지 조성물의 제조 방법 및 패턴 형성체의 제조 방법 |
CN110634981B (zh) * | 2019-09-27 | 2021-07-20 | 连云港神舟新能源有限公司 | 一种新型叠片组件用超薄端引线 |
JP2023535572A (ja) * | 2020-07-31 | 2023-08-18 | モーフォトニクス ホールディング ベスローテン フェノーツハップ | 可撓性スタンプをマスタから複製するためのアセンブリ |
CN112571687A (zh) * | 2020-12-28 | 2021-03-30 | 上海建工四建集团有限公司 | 一种高开孔率复合硅胶模具 |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB131617A (ja) * | ||||
GB1205978A (en) * | 1967-11-20 | 1970-09-23 | Reichhold Chemicals Inc | Improvements in production of plastic printing plates |
US3989790A (en) * | 1974-03-22 | 1976-11-02 | Sws Silicones Corporation | Method for preparing silicone rubber molds |
US4430461A (en) * | 1980-06-06 | 1984-02-07 | General Electric Company | Method of removing volatiles in the preparation of silicone compositions |
US4528324A (en) * | 1982-11-01 | 1985-07-09 | General Electric Company | Process for producing RTV silicone rubber compositions using a devolatilizing extruder |
FR2597110A1 (fr) | 1986-04-14 | 1987-10-16 | Rhone Poulenc Multi Tech | Composition organopolysiloxane, potentiellement reticulable et utilisable notamment en microlithographie, et son procede d'application |
JPH0759697B2 (ja) * | 1990-03-09 | 1995-06-28 | 信越化学工業株式会社 | ハードディスク装置用カバー・パッキン組立体 |
JPH1044362A (ja) * | 1996-08-08 | 1998-02-17 | Kyodo Printing Co Ltd | 賦形シートの製造方法 |
US6013715A (en) * | 1997-04-22 | 2000-01-11 | Dow Corning Corporation | Thermoplastic silicone elastomers |
TW396365B (en) * | 1997-08-27 | 2000-07-01 | Toray Industries | Plasma display decive and its method of manufacture |
US6444154B1 (en) * | 2000-12-20 | 2002-09-03 | General Electric Company | Continuous preparation of a liquid silicone rubber composition |
US6617674B2 (en) * | 2001-02-20 | 2003-09-09 | Dow Corning Corporation | Semiconductor package and method of preparing same |
JP4255287B2 (ja) * | 2001-05-14 | 2009-04-15 | 東レ・ダウコーニング株式会社 | 熱伝導性シリコーン組成物 |
EP1279994A3 (en) * | 2001-07-27 | 2003-10-01 | Alps Electric Co., Ltd. | Semitransparent reflective liquid-crystal display device |
US6689859B2 (en) * | 2002-03-05 | 2004-02-10 | Dow Corning Corporation | High fracture toughness hydrosilyation cured silicone resin |
JP2004216641A (ja) * | 2003-01-10 | 2004-08-05 | Three M Innovative Properties Co | 可とう性成形型及びその製造方法ならびに微細構造体の製造方法 |
DE10313941A1 (de) * | 2003-03-27 | 2004-10-14 | Wacker-Chemie Gmbh | Verfahren zur kontinuierlichen Herstellung von hochviskosen Siliconmassen |
KR100568581B1 (ko) * | 2003-04-14 | 2006-04-07 | 주식회사 미뉴타텍 | 미세패턴 형성 몰드용 조성물 및 이로부터 제작된 몰드 |
JP4559048B2 (ja) * | 2003-07-24 | 2010-10-06 | ダウ・コーニング・コーポレイション | 硬化性シリコーン組成物、及びこれを用いたパターン形成方法 |
KR101185613B1 (ko) * | 2004-04-27 | 2012-09-24 | 더 보오드 오브 트러스티스 오브 더 유니버시티 오브 일리노이즈 | 소프트 리소그래피용 복합 패터닝 장치 |
US8691389B2 (en) | 2005-06-02 | 2014-04-08 | Dow Corning Corporation | Method of nanopatterning, a cured resist film use therein, and an article including the resist film |
-
2007
- 2007-03-09 WO PCT/US2007/063651 patent/WO2007121006A2/en active Application Filing
- 2007-03-09 KR KR1020087027634A patent/KR101358066B1/ko not_active IP Right Cessation
- 2007-03-09 US US12/294,767 patent/US8795560B2/en not_active Expired - Fee Related
- 2007-03-09 JP JP2009505523A patent/JP5520044B2/ja not_active Expired - Fee Related
- 2007-03-09 EP EP07758225A patent/EP2005248A2/en not_active Withdrawn
- 2007-03-09 CN CNA2007800184111A patent/CN101449206A/zh active Pending
-
2014
- 2014-06-24 US US14/313,240 patent/US20140305500A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
KR101358066B1 (ko) | 2014-02-06 |
US20100200146A1 (en) | 2010-08-12 |
KR20090005172A (ko) | 2009-01-12 |
EP2005248A2 (en) | 2008-12-24 |
JP2009533531A (ja) | 2009-09-17 |
WO2007121006A2 (en) | 2007-10-25 |
US8795560B2 (en) | 2014-08-05 |
CN101449206A (zh) | 2009-06-03 |
WO2007121006A3 (en) | 2008-04-24 |
US20140305500A1 (en) | 2014-10-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5520044B2 (ja) | 低熱変形シリコーン複合体モールド | |
JP5542331B2 (ja) | 強化シリコーン樹脂フィルム及びそれらを調製する方法 | |
KR101440567B1 (ko) | 실리콘 수지층을 포함하는 태양 전지 | |
JP5184098B2 (ja) | 強化シリコーン樹脂フィルムおよびその製造方法 | |
US8092910B2 (en) | Reinforced silicone resin film and method of preparing same | |
EP1979427B1 (en) | Silicone resin film, method of preparing same, and nanomaterial-filled silicone composition | |
JP5091249B2 (ja) | 多層の硬化シリコーン樹脂組成物で被覆またはラミネートされたガラス基板 | |
JP2015051635A (ja) | 優れた耐火性を有する複合品 | |
JP2010519381A (ja) | 強化シリコーン樹脂フィルムおよびその調製方法 | |
KR20100137441A (ko) | 실리콘 조성물, 실리콘 접착제, 피복된 기판 및 적층 기판 | |
EP2076387A2 (en) | Ductile multilayer silicone resin films |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20091028 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20120322 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120330 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20120702 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20120709 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120726 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130322 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130610 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20140311 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20140404 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5520044 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
LAPS | Cancellation because of no payment of annual fees |