CN1499526A - 半导体存储装置及其制造方法 - Google Patents
半导体存储装置及其制造方法 Download PDFInfo
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- CN1499526A CN1499526A CNA2003101148436A CN200310114843A CN1499526A CN 1499526 A CN1499526 A CN 1499526A CN A2003101148436 A CNA2003101148436 A CN A2003101148436A CN 200310114843 A CN200310114843 A CN 200310114843A CN 1499526 A CN1499526 A CN 1499526A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 36
- 238000000034 method Methods 0.000 title claims description 54
- 238000012795 verification Methods 0.000 claims description 61
- 238000003860 storage Methods 0.000 claims description 58
- 238000012545 processing Methods 0.000 description 13
- 230000033228 biological regulation Effects 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 238000009826 distribution Methods 0.000 description 6
- 238000013459 approach Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 1
- 238000012217 deletion Methods 0.000 description 1
- 230000037430 deletion Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000009191 jumping Effects 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000005055 memory storage Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 239000011232 storage material Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5685—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using storage elements comprising metal oxide memory material, e.g. perovskites
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0064—Verifying circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
- G11C2013/0071—Write using write potential applied to access device gate
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/30—Resistive cell, memory material aspects
- G11C2213/31—Material having complex metal oxide, e.g. perovskite structure
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/79—Array wherein the access device being a transistor
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Computer Hardware Design (AREA)
- Read Only Memory (AREA)
Abstract
Description
Claims (9)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002324329 | 2002-11-07 | ||
JP2002324329A JP4187197B2 (ja) | 2002-11-07 | 2002-11-07 | 半導体メモリ装置の制御方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1499526A true CN1499526A (zh) | 2004-05-26 |
CN100446121C CN100446121C (zh) | 2008-12-24 |
Family
ID=32105483
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2003101148436A Expired - Lifetime CN100446121C (zh) | 2002-11-07 | 2003-11-07 | 半导体存储装置及其制造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US6862213B2 (zh) |
EP (1) | EP1418592A1 (zh) |
JP (1) | JP4187197B2 (zh) |
KR (1) | KR100555243B1 (zh) |
CN (1) | CN100446121C (zh) |
TW (1) | TWI229866B (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101894587A (zh) * | 2010-07-23 | 2010-11-24 | 上海宏力半导体制造有限公司 | 相变存储器的自限写入脉冲发生电路 |
US8116117B2 (en) | 2006-11-29 | 2012-02-14 | Samsung Electronics Co., Ltd. | Method of driving multi-level variable resistive memory device and multi-level variable resistive memory device |
CN103377693A (zh) * | 2012-04-25 | 2013-10-30 | 索尼公司 | 存储控制装置、存储装置和处理方法 |
CN105931664A (zh) * | 2015-01-22 | 2016-09-07 | 南泰若股份有限公司 | 用于读取和编程1-r阻变元件阵列的方法 |
CN110473580A (zh) * | 2019-08-21 | 2019-11-19 | 南京邮电大学 | 一种基于忆阻器芯片的可编程电路最小单元及其操作方法 |
Families Citing this family (48)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3894030B2 (ja) * | 2002-04-17 | 2007-03-14 | ソニー株式会社 | 抵抗変化記憶素子を用いた記憶装置及び同装置の参照抵抗値決定方法 |
JP4187148B2 (ja) * | 2002-12-03 | 2008-11-26 | シャープ株式会社 | 半導体記憶装置のデータ書き込み制御方法 |
TWI355661B (en) * | 2003-12-18 | 2012-01-01 | Panasonic Corp | Method for using a variable-resistance material as |
JP4295680B2 (ja) * | 2004-06-15 | 2009-07-15 | シャープ株式会社 | 半導体記憶装置 |
KR100576369B1 (ko) * | 2004-11-23 | 2006-05-03 | 삼성전자주식회사 | 전이 금속 산화막을 데이타 저장 물질막으로 채택하는비휘발성 기억소자의 프로그램 방법 |
JP4890016B2 (ja) * | 2005-03-16 | 2012-03-07 | ルネサスエレクトロニクス株式会社 | 不揮発性半導体記憶装置 |
WO2006098013A1 (ja) * | 2005-03-16 | 2006-09-21 | Spansion Llc | 記憶装置、および記憶装置の制御方法 |
US7521705B2 (en) * | 2005-08-15 | 2009-04-21 | Micron Technology, Inc. | Reproducible resistance variable insulating memory devices having a shaped bottom electrode |
JP2007058772A (ja) * | 2005-08-26 | 2007-03-08 | Micron Technol Inc | バンド・ギャップ基準から可変出力電圧を生成する方法及び装置 |
JP2007059024A (ja) * | 2005-08-26 | 2007-03-08 | Micron Technol Inc | 温度補償された読み出し・検証動作をフラッシュ・メモリにおいて生成するための方法及び装置 |
JP2007060544A (ja) * | 2005-08-26 | 2007-03-08 | Micron Technol Inc | 温度係数が小さいパワー・オン・リセットを生成する方法及び装置 |
JP4828901B2 (ja) * | 2005-09-22 | 2011-11-30 | 株式会社東芝 | 半導体集積回路装置 |
US7489556B2 (en) * | 2006-05-12 | 2009-02-10 | Micron Technology, Inc. | Method and apparatus for generating read and verify operations in non-volatile memories |
US7492630B2 (en) * | 2006-07-31 | 2009-02-17 | Sandisk 3D Llc | Systems for reverse bias trim operations in non-volatile memory |
US7495947B2 (en) * | 2006-07-31 | 2009-02-24 | Sandisk 3D Llc | Reverse bias trim operations in non-volatile memory |
US7719874B2 (en) * | 2006-07-31 | 2010-05-18 | Sandisk 3D Llc | Systems for controlled pulse operations in non-volatile memory |
US7499304B2 (en) * | 2006-07-31 | 2009-03-03 | Sandisk 3D Llc | Systems for high bandwidth one time field-programmable memory |
US7522448B2 (en) * | 2006-07-31 | 2009-04-21 | Sandisk 3D Llc | Controlled pulse operations in non-volatile memory |
US7499355B2 (en) * | 2006-07-31 | 2009-03-03 | Sandisk 3D Llc | High bandwidth one time field-programmable memory |
EP1898426A3 (fr) * | 2006-09-05 | 2008-05-21 | Stmicroelectronics Sa | Mémoire à changement de phase effacable et programmable au moyen d' un décodeur de ligne |
KR100816752B1 (ko) | 2006-09-15 | 2008-03-25 | 삼성전자주식회사 | 프로그램 루프 동작을 수행하는 상 변화 메모리 장치 및그것의 프로그램 방법 |
KR100801082B1 (ko) | 2006-11-29 | 2008-02-05 | 삼성전자주식회사 | 멀티 레벨 가변 저항 메모리 장치의 구동 방법 및 멀티레벨 가변 저항 메모리 장치 |
JP4791943B2 (ja) * | 2006-11-30 | 2011-10-12 | 東芝マイクロエレクトロニクス株式会社 | 半導体装置 |
KR100868105B1 (ko) * | 2006-12-13 | 2008-11-11 | 삼성전자주식회사 | 저항 메모리 장치 |
KR100809339B1 (ko) * | 2006-12-20 | 2008-03-05 | 삼성전자주식회사 | 저항체를 이용한 비휘발성 메모리 장치 및 그 구동 방법 |
JP5317420B2 (ja) * | 2007-03-14 | 2013-10-16 | 富士通株式会社 | 抵抗変化メモリのフォーミング方法、抵抗変化メモリ、及び、抵抗変化メモリの製造方法 |
JP4288376B2 (ja) | 2007-04-24 | 2009-07-01 | スパンション エルエルシー | 不揮発性記憶装置およびその制御方法 |
JP2008276858A (ja) * | 2007-04-27 | 2008-11-13 | Spansion Llc | 不揮発性記憶装置及びそのバイアス制御方法 |
US7609543B2 (en) * | 2007-09-27 | 2009-10-27 | Magic Technologies, Inc. | Method and implementation of stress test for MRAM |
JP5253784B2 (ja) * | 2007-10-17 | 2013-07-31 | 株式会社東芝 | 不揮発性半導体記憶装置 |
KR101506655B1 (ko) * | 2008-05-15 | 2015-03-30 | 삼성전자주식회사 | 메모리 장치 및 메모리 데이터 오류 관리 방법 |
US7826248B2 (en) | 2008-05-20 | 2010-11-02 | Seagate Technology Llc | Write verify method for resistive random access memory |
US7978507B2 (en) * | 2008-06-27 | 2011-07-12 | Sandisk 3D, Llc | Pulse reset for non-volatile storage |
KR20100035445A (ko) * | 2008-09-26 | 2010-04-05 | 삼성전자주식회사 | 비휘발성 메모리 장치 및 그 구동 방법 |
JP2010225221A (ja) * | 2009-03-23 | 2010-10-07 | Toshiba Corp | 半導体記憶装置 |
JP5233815B2 (ja) * | 2009-04-22 | 2013-07-10 | ソニー株式会社 | 抵抗変化型メモリデバイスおよびその動作方法 |
US8331168B2 (en) | 2009-04-30 | 2012-12-11 | International Business Machines Corporation | Increased capacity heterogeneous storage elements |
JP5044617B2 (ja) * | 2009-08-31 | 2012-10-10 | 株式会社東芝 | 不揮発性半導体記憶装置 |
US8446768B2 (en) * | 2009-12-24 | 2013-05-21 | Samsung Electronics Co., Ltd. | Control device for nonvolatile memory and method of operating control device |
CN102263122B (zh) * | 2010-05-28 | 2012-12-12 | 旺宏电子股份有限公司 | 非易失性存储装置 |
US8547746B2 (en) | 2011-02-24 | 2013-10-01 | Micron Technology, Inc. | Voltage generation and adjustment in a memory device |
KR102162701B1 (ko) | 2013-07-30 | 2020-10-07 | 에스케이하이닉스 주식회사 | 비휘발성 메모리 장치 및 이를 이용하는 반도체 시스템 |
JP6425137B2 (ja) * | 2014-06-12 | 2018-11-21 | パナソニックIpマネジメント株式会社 | データ記録方法および不揮発性記憶装置 |
JP6402072B2 (ja) * | 2015-06-24 | 2018-10-10 | ルネサスエレクトロニクス株式会社 | 半導体不揮発性記憶装置及びその動作プログラム |
US9437284B1 (en) * | 2015-12-02 | 2016-09-06 | Vanguard International Semiconductor Corporation | Memory devices and control methods thereof |
KR102571185B1 (ko) * | 2016-08-25 | 2023-08-29 | 에스케이하이닉스 주식회사 | 반도체 메모리 장치 및 이의 동작 방법 |
US10991426B2 (en) * | 2019-01-25 | 2021-04-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Memory device current limiter |
DE102019132067A1 (de) | 2019-01-25 | 2020-07-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Strombegrenzer für speichervorrichtung |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0773685A (ja) * | 1993-09-06 | 1995-03-17 | Hitachi Ltd | 半導体不揮発性記憶装置 |
US5694366A (en) * | 1996-05-01 | 1997-12-02 | Micron Quantum Devices, Inc. | OP amp circuit with variable resistance and memory system including same |
US5883827A (en) * | 1996-08-26 | 1999-03-16 | Micron Technology, Inc. | Method and apparatus for reading/writing data in a memory system including programmable resistors |
US6134141A (en) * | 1998-12-31 | 2000-10-17 | Sandisk Corporation | Dynamic write process for high bandwidth multi-bit-per-cell and analog/multi-level non-volatile memories |
US6259627B1 (en) * | 2000-01-27 | 2001-07-10 | Multi Level Memory Technology | Read and write operations using constant row line voltage and variable column line load |
JP2002083495A (ja) * | 2000-06-30 | 2002-03-22 | Seiko Epson Corp | 半導体集積回路の情報記憶方法、半導体集積回路、その半導体集積回路を多数備えた半導体装置、及びその半導体装置を用いた電子機器 |
-
2002
- 2002-11-07 JP JP2002324329A patent/JP4187197B2/ja not_active Expired - Fee Related
-
2003
- 2003-10-22 EP EP03256662A patent/EP1418592A1/en not_active Withdrawn
- 2003-11-05 US US10/702,790 patent/US6862213B2/en not_active Expired - Lifetime
- 2003-11-07 CN CNB2003101148436A patent/CN100446121C/zh not_active Expired - Lifetime
- 2003-11-07 TW TW092131238A patent/TWI229866B/zh not_active IP Right Cessation
- 2003-11-07 KR KR1020030078731A patent/KR100555243B1/ko active IP Right Grant
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8116117B2 (en) | 2006-11-29 | 2012-02-14 | Samsung Electronics Co., Ltd. | Method of driving multi-level variable resistive memory device and multi-level variable resistive memory device |
CN101894587A (zh) * | 2010-07-23 | 2010-11-24 | 上海宏力半导体制造有限公司 | 相变存储器的自限写入脉冲发生电路 |
CN103377693A (zh) * | 2012-04-25 | 2013-10-30 | 索尼公司 | 存储控制装置、存储装置和处理方法 |
CN103377693B (zh) * | 2012-04-25 | 2017-09-08 | 索尼公司 | 存储控制装置、存储装置和处理方法 |
CN105931664A (zh) * | 2015-01-22 | 2016-09-07 | 南泰若股份有限公司 | 用于读取和编程1-r阻变元件阵列的方法 |
CN105931664B (zh) * | 2015-01-22 | 2020-09-25 | 南泰若股份有限公司 | 用于读取和编程1-r阻变元件阵列的方法 |
CN110473580A (zh) * | 2019-08-21 | 2019-11-19 | 南京邮电大学 | 一种基于忆阻器芯片的可编程电路最小单元及其操作方法 |
CN110473580B (zh) * | 2019-08-21 | 2021-08-20 | 南京邮电大学 | 一种基于忆阻器芯片的可编程电路最小单元及其操作方法 |
Also Published As
Publication number | Publication date |
---|---|
JP4187197B2 (ja) | 2008-11-26 |
US6862213B2 (en) | 2005-03-01 |
CN100446121C (zh) | 2008-12-24 |
KR20040041069A (ko) | 2004-05-13 |
EP1418592A1 (en) | 2004-05-12 |
KR100555243B1 (ko) | 2006-03-03 |
US20040130938A1 (en) | 2004-07-08 |
TW200414186A (en) | 2004-08-01 |
JP2004158143A (ja) | 2004-06-03 |
TWI229866B (en) | 2005-03-21 |
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