CN1474442A - 引线键合方法以及凸点形成方法和凸点 - Google Patents

引线键合方法以及凸点形成方法和凸点 Download PDF

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CN1474442A
CN1474442A CNA021429669A CN02142966A CN1474442A CN 1474442 A CN1474442 A CN 1474442A CN A021429669 A CNA021429669 A CN A021429669A CN 02142966 A CN02142966 A CN 02142966A CN 1474442 A CN1474442 A CN 1474442A
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mentioned
conductor
salient point
bonding
wire
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CN1230884C (zh
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今井玲
安田玉成
石井志信
小作祐次
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Offshore Co ltd
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Offshore Co ltd
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/002—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
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Abstract

本发明的课题是，提供能够防止凸点与引线键合后引线与电路基板的接触以及引线与布线之间的接触的发生，并且能够防止凸点与引线结合时引线弯曲的发生的引线键合方法以及凸点形成方法和凸点。在第1导体10与第2导体20之间进行引线键合时，利用球键合预先在第2导体20上形成凸点51a。经规定的路径移动毛细管40，并使其工作，在凸点51a的上部形成倾斜面51c。在第1导体10上进行1次键合后，对凸点51a从第1导体10一侧将引线50制成环形，在倾斜面51c上进行2次键合。

Description

引线键合方法以及凸点形成方法和凸点
[发明的详细说明]
[发明所属的技术领域]
本发明涉及在2个导体间进行引线键合的方法以及此时的凸点形成方法和凸点，特别是涉及适合于在第1导体上进行1次键合，并且在第2导体上进行2次键合，从而在第1导体与第2导体之间进行引线键合，以进行了引线键合的引线不与其他引线接触，也不与电路基板面接触的方式，利用球键合预先在第2导体上形成合适形状的凸点来进行的引线键合方法，以及形成那样的凸点的方法和凸点。
[现有技术]
在进行引线键合时，一般采用如下的引线键合法：借助于利用毛细管内穿过了Au引线的毛细管，通过来自焊枪电极的放电，使从毛细管中突出的Au引线的端部形成小球，使毛细管位于半导体芯片上进行1次键合后，使毛细管移动到布线上进行2次键合，在半导体芯片与布线之间进行引线键合。
这时，由于当布线材料是例如Cu、Ni、薄镀Au层之类的与Au引线的键合性差的材料时，不能够直接在布线上进行键合，所以在要进行键合的部分预先形成Ag镀层或Au厚膜等基底。
但是，设置这样的基底在实用上不方便，即使布线材料是与Au引线键合性差的材料，也希望用能够直接在布线上键合的方法。
例如在日本国特开平10-112471号公报中记述了如下的键合方法：如图10所示，在电路基板30的第2导体20上进行球键合，形成凸点51a，在与第1导体10的相反一侧的位置对凸点51a进行其楔键合后，在第1导体10上进行1次键合，对凸点51a从第1导体10一侧将引线50制成环形，在凸点51a上进行2次键合，从而在第1导体10与第2导体20间进行引线键合。
根据该方法，由于在利用球键合形成凸点后，在凸点后方(凸点的与第1导体所在一侧相反的一侧的位置)的第2导体上进行了其楔键合，所以楔键合呈弯曲形状，不产生凸点尾部。
另外，还记述了在凸点上进行2次键合的场合，当如图11所示，以从凸点51a延伸的引线50的弯曲部51b进入毛细管40的通孔41内的方式放置毛细管40时，以弯曲部51b被通孔41的一侧的内壁压住，引线50被通孔41的另一侧压断的状态，使两者键合。
[发明所要解决的课题]
但是，用在上述公报中记载的方法，如图11所示，导致凸点形成后的楔键合部与引线部的键合，即导致曲面与曲面的键合，当发生键合位置偏离时，作为其结果，有可能发生引线弯曲，以及相邻的引线间发生接触。
另外，虽然在凸点形成后借助于使楔键合部形成为向后方弯曲的形状能够抑制引线尾部的发生，但是由于对引线与凸点的键合部不能确保其充分倾斜，或确保是平面，所以不能充分防止如图11的虚线所示的、将凸点51a与引线50键合后所发生的引线50与电路基板30的接触以及引线50与布线之间的接触。
本发明的课题在于提供能够防止凸点与引线键合后的引线与电路基板的接触以及引线与布线之间的接触的发生，并且能够防止在凸点与引线键合时引线弯曲发生的引线键合方法、凸点形成方法和凸点。
[解决课题的手段]
为解决上述课题，本发明采取了如下的方法。
本发明的引线键合方法是在第1导体与第2导体之间进行引线键合的方法，它包括利用球键合在上述第2导体上形成凸点的工序；在上述凸点的上部形成倾斜面的工序；在上述第1导体上对引线的一端进行1次键合的工序；以及对上述第2导体上的凸点从上述第1导体将引线制成环形，在上述凸点上部的倾斜面上对引线的另一端进行2次键合的工序。
另外，本发明的引线键合方法是利用在其通孔中穿过引线的毛细管，在第1导体与第2导体之间进行引线键合的方法，它包括使毛细管位于上述第2导体上，借助于进行球键合在上述第2导体上形成凸点的工序；在将上述毛细管向上方移动后，使该毛细管横向移动至与上述第1导体相反一侧的位置，使上述毛细管下降，切断上述引线，在上述凸点的上部形成倾斜面的工序；在上述第1导体上对上述引线的一端进行1次键合的工序；以及使上述毛细管位于上述凸点上部的倾斜面上，对从上述毛细管内伸出的引线在上述毛细管的底部在上述凸点上部的倾斜面上进行2次键合，并在其键合部附近切断上述引线的工序。
在本发明的引线键合方法的优选实施例中，上述凸点上部的倾斜面形成平面或凹面，上述2次键合工序包括使上述毛细管位于上述凸点上部的倾斜面上，在该毛细管的底部在上述凸点上部的倾斜面上挤压引线。
另外，在本发明的引线键合方法的优选实施例中，上述凸点上部的倾斜面以联结该倾斜面的两端部间的直线对第2导体面所成的倾角朝向上述第1导体形成2°～60°的张角的方式形成。
还有，本发明的凸点形成方法是适合于在第1导体上进行1次键合，并且在第2导体上进行2次键合，从而在第1导体与第2导体之间进行引线键合，利用球键合预先在第2导体上形成凸点的方法，它包括使毛细管下降至上述第2导体上，将在引线端部形成的小球球键合到上述第2导体上形成凸点的工序；之后，使上述毛细管垂直上升的工序；之后，使上述毛细管向与上述第1导体所在方向相反的方向横向移动的工序；之后，使上述毛细管下降，将该毛细管的底部挤压到上述凸点上的工序；以及之后的使上述毛细管向上述第1导体的方向横向移动的工序，并且在上述凸点的上部设置倾斜面。
本发明的凸点形成方法是适合于在第1导体上进行1次键合，并且在第2导体上进行2次键合，从而在第1导体与第2导体之间进行引线键合，利用球键合预先在第2导体上形成凸点的方法，它包括使毛细管下降至上述第2导体上，将在引线端部形成的小球球键合到上述第2导体上形成凸点的工序；之后，使上述毛细管垂直上升的工序；之后，使上述毛细管向上述第1导体所在方向横向移动的工序；之后，使上述毛细管垂直上升的工序；之后，使上述毛细管向与上述第1导体所在方向相反的方向横向移动的工序；之后，使上述毛细管下降，将该毛细管的底部挤压到上述凸点上的工序；以及之后的使上述毛细管向上述第1导体所在方向横向移动的工序，并且在上述凸点的上部设置倾斜面。
在本发明的凸点形成方法的优选实施例中，上述凸点上部的倾斜面以联结的该倾斜面的两端部间直线对上述第2导体面所成的倾角朝向上述第1导体形成2°～60°的张角的方式形成。
另外，本发明的凸点是适合于在第1导体上进行1次键合，并且在第2导体上进行2次键合，从而在第1导体与第2导体之间进行引线键合，利用球键合预先在第2导体上形成的凸点，其特征在于：它具有形成平面或凹面的上表面，该上表面以联结它的两端部间的直线对上述第2导体面所成的倾角朝向上述第1导体形成2°～60°的张角的方式形成。
[附图的简单说明]
图1是示出采用本发明的一个实施例的引线键合方法在半导体芯片与布线之间进行引线键合的状态的剖面图。
图2A～图2G是用于说明本发明的引线键合方法的一个实施例的键合工序的图。
图3是在凸点上部的倾斜面上对引线进行2次键合时的放大剖面图。
图4是示出实施本发明的凸点形成方法之前的状态，示出电路基板上的第1导体、第2导体与毛细管的位置关系的图。
图5A～图5E是示出本发明的凸点形成方法的一个实施例的工序图，图5F是示出毛细管的移动路径的图。
图6是根据图5A～图5F所示的实施例形成的凸点的剖面图。
图7A～图7G是示出本发明的凸点形成方法的另一实施例的工序图，图7H是示出毛细管的移动路径的图。
图8A和图8B是根据图7A～图7H所示的实施例分别形成的凸点的剖面图。
图9是示出根据本发明的凸点形成方法的实施例利用所形成的凸点进行引线键合的例子的剖面图。
图10是利用按现有的凸点形成方法形成的凸点进行引线键合的图。
图11是说明利用按现有的凸点形成方法形成的凸点进行引线键合时的问题的图。
[发明的实施例]
下面根据图示的实施例对本发明进行具体的说明。另外，在附图的各图中，相同的参照符号表示同样的部分。
在图1中示出了用本发明的一个实施例的引线键合方法在半导体芯片与布线之间进行引线键合的状态。
在由陶瓷基板、印刷基板等基板或者引线框架等构成的电路基板30上用小片安装膏6安装了半导体芯片8。在该半导体芯片8上形成了键合区(第1导体)10。另外，在电路基板30上形成了使用与Au引线50键合性差的Ni、Cu等布线材料的作为第2导体的布线20。
下面根据图2A至图2G，对本发明的一个实施例的引线键合方法进行说明。
首先，如图2A所示，在从毛细管40的通孔41中穿过引线50的状态下，利用电焊枪60在从毛细管40突出的引线50的端部形成小球51。
其次，如图2B所示，将毛细管40下降至布线20上，对在引线50的端部形成的小球51在布线20上进行球键合。借助于该球键合形成凸点51a。
接着，在使毛细管40上升后，如图2C所示，从凸点51a的中心向作为第1导体的键合区10的所在方向的反方向横向移动。之后，如图2D所示，再次将毛细管40压向下方，将毛细管40的底部42挤压到凸点51a的面上，在凸点51a的上部形成倾斜面51c，切断引线50。
由实验得知，如图3所示，这样形成的凸点51a借助于使凸点51a上部的倾斜面51c对作为第2导体的布线20的面的倾角θ为2°～60°的张角，构成了从键合区10向凸点51a上部的倾斜面51c进行引线键合时的引线50的导轨，因而在引线50上不产生U字形的下垂。
之后，如图2E所示，利用电焊枪60在引线50的端部形成小球52。然后，如图2F所示，使毛细管40位于半导体芯片8的键合区10上，进行1次键合。
接着，如图2G所示，从键合区10进行引线50的成环，使引线50位于凸点51a上部的倾斜面51c的上部，在毛细管40的底部42使引线50与凸点51a上部的倾斜面51c相键合，切断引线50。
图3是上述图2G工序的引线50与凸点51a上部的倾斜面51c键合时的放大图。之所以如上所述那样，将凸点51a的上表面51c的倾角θ制成2°～60°，是因为根据第1导体(键合区)10和第2导体(布线)20的在高度方向上的位置关系由实验得出这一范围是适当的。即，由于在第1导体10与第2导体20之间进行引线键合时，在电路基板30上的第1导体10处于比第2导体20低的位置的场合，减小倾角θ使得易于将从第1导体10制成环形的引线50导引至第2导体20面上的凸点51a的上表面51c上。另一方面，是由于在第1导体10处于比第2导体20高的位置的场合，增大倾角θ反而易于导引。
另外，上述的引线键合利用了超声波施加装置。
下面参照图4至图9对本发明的凸点及其形成方法的实施例进行说明。
图4示出了在由陶瓷基板、印刷基板等基板或者引线框架等构成的电路基板30上设置的第1导体10和第2导体20，以及构成键合装置的一部分的毛细管40和从其通孔41内穿过落下，并在端部形成了小球51的引线50。
下面根据图5A至图5F对本发明的凸点形成方法的一个实施例进行说明。
首先，借助于省略了其图示的电焊枪的热量，在毛细管40底部的、从通孔41突出的引线50的端部形成小球51。至此，是一般的工序。
其次，作为第1工序，如图5A所示，使毛细管40下降到第2导体20上，将在引线50的端部形成的小球51键合到第2导体20上形成凸点51a。
接着，作为第2工序，如图5B所示，使上述毛细管40垂直上升。
接着，作为第3工序，如图5C所示，使上述毛细管40向与上述第1导体10所在方向相反的方向横向移动。
进而，作为第4工序，如图5D所示，使上述毛细管40下降，将毛细管40的底部42挤压到凸点51a的面上。
接着，作为第5工序，如图5E所示，使上述毛细管40向上述第1导体10的方向横向移动。
当用毛细管的移动来表示这些工序时，如图2F所示，成为M1→M2→M3→M4→M5，通过进行这些工序可以在第2导体20的面上形成上表面51c为倾斜面的凸点51a。
对上述各工序中的毛细管40的移动距离和移动方向的控制以能取得如下结果的方式进行：如图6所示，由此形成的凸点51a在联结第1导体10和第2导体20的垂直面的剖面图中，联结凸点51a的上表面51c的两端部P1、P2间的直线对第2导体20的面的倾角θ朝向第1导体形成2°～60°的张角。
另外，在图中，符号A表示凸点51a的基底部的直径，符号B表示基底部的厚度，符号C表示凸点51a的高度。
实际上，上述尺寸A、B、C与引线50的直径也有关系，当引线50的直径为7～100μm时，基底部的直径A为25～300μm，基底部的厚度B可以在4～60μm的范围内，凸点的高度C可以在10～200μm的范围内形成。作为一例，在引线直径＝30μm的金丝的场合，形成基底部直径A＝75μm，基底部厚度B＝17μm，凸点高度C＝60μm的凸点51a。另外，作为另一例，在引线直径＝50μm的金丝的场合，形成基底部直径A＝190μm，基底部厚度B＝35μm，凸点高度C＝110μm的凸点51a。
下面根据图7A至图7H对本发明的凸点形成方法的另一实施例进行说明。
首先，借助于省略了其图示的电焊枪的热量，在毛细管40底部的、从通孔41突出的引线50的端部形成小球51。
其次，作为第1工序，如图7A所示，使毛细管40下降到第2导体20上，将在引线50的端部形成的小球51键合到第2导体上形成凸点51a。
接着，作为第2工序，如图7B所示，使上述毛细管40垂直上升。
然后，作为第3工序，如图7C所示，使上述毛细管40向上述第1导体10的所在方向横向移动。
接着，作为第4工序，如图7D所示，使上述毛细管40垂直上升。
接着，作为第5工序，如图7E所示，使上述毛细管40向与上述第1导体10所在方向相反的方向横向移动。
进而，作为第6工序，如图7F所示，使上述毛细管40下降，将毛细管40的底部挤压到凸点51a的面上。
最后，作为第7工序，如图7G所示，使上述毛细管40向上述第1导体10的方向横向移动。
当用毛细管的移动来表示这些工序时，如图2H所示，成为M1→M2→M3→M4→M5→M6→M7，通过进行这些工序，可以在第2导体20的面上形成上表面51c为倾斜面的凸点51a。
对上述各工序中的毛细管40的移动距离和移动方向的控制以能取得如下结果的方式进行：由此形成的凸点，如图8A、8B所示，在联结第1导体10与第2导体20的垂直面的剖面图中，联结凸点51a的上表面51c的两端部P1、P2间的直线对第2导体20的面的倾角θ朝向第1导体10形成2°～60°的张角。
在上述各工序中，当如图7H的虚线那样移动毛细管40时，由于在凸点51a的上表面51c上承载的引线50的弯曲部51b的量有变化，所以最终会或如图8A那样，增高所形成的凸点51a的高度，或如图8B那样，使凸点51a的上部面积比基底部的面积大。
如图3、图6、图8A、图8B所示，本发明的实施例的凸点51a的上表面51c形成平面或凹面，同时在连接第1导体10与第2导体20的垂直面的剖面图中，联结凸点51a的上表面51c的两端部P1、P2间的直线对第2导体20的面的倾角θ朝向第1导体10形成2°～60°的张角。
若在第2导体20的面上预先形成上述形状的凸点51a，则如图9所示，在从第1导体10对第2导体20将引线50环接时，倾斜面构成了导引面，引线50的弯曲能够减少，因而能够使引线之间的接触以及因引线松弛而与电路基板面的接触等减少。
[发明的效果]
如以上所述，根据本发明的引线键合方法，在凸点上部形成的倾斜面，在从第1导体对第2导体进行引线环接时构成了导引面，因而能够防止引线与半导体芯片，或引线与键合区的接触。另外，由于凸点的上表面成为倾斜面，所以消除了现有的用引线与引线键合时所发生的引线弯曲，作为其结果，消除了引线键合后相邻的引线间的接触。还有，由于凸点上部的楔键合形成了倾斜面，所以能够消除楔键合后的引线残留，使半导体封装减薄。另外，将倾斜面制成平面或凹面时，能够扩大键合面积，可以提高键合强度。
另外，根据本发明的凸点形成方法，由于能够在第2导体面上形成具有在联结第1导体与第2导体的垂直面的剖面图中，联结凸点的上表面的两端部间的直线对第2导体的面的倾角朝向第1导体形成2°～60°的张角的这样的倾斜面的凸点，所以在从第1导体对第2导体进行引线环接时，倾斜面构成导引面，引线的弯曲能够减少，因而能够使引线之间的接触以及因引线松弛而与电路基板面的接触等减少，同时还能够防止凸点与引线结合时引线弯曲的发生。
另外，由于能够自由地形成倾角，所以当减小倾角时能够减少凸点上的引线残留，从而能够将封装减薄。另外，当第1导体处于高的位置上时，通过增大倾角，能够容易而完全地进行引线连接。
另外，由于能够增大凸点上表面的面积，所以能够扩大它与引线的键合面积，能够提高键合强度。

Claims (10)

1.一种引线键合方法，它是在第1导体与第2导体之间进行引线键合的方法，其特征在于，包括：
利用球键合在上述第2导体上形成凸点的工序；
在上述凸点的上部形成倾斜面的工序；
在上述第1导体上对引线的一端进行1次键合的工序；以及
对上述第2导体上的凸点从上述第1导体将引线制成环形，在上述凸点上部的倾斜面上对引线的另一端进行2次键合的工序。
2.如权利要求1所述的引线键合方法，其特征在于：
上述凸点上部的倾斜面以联结该倾斜面的两端部间的直线对上述第2导体面所成的倾角朝向上述第1导体形成2°～60°的张角的方式形成。
3.一种引线键合方法，它是利用在其通孔中穿过引线的毛细管，在第1导体与第2导体之间进行引线键合的方法，其特征在于，包括：
使毛细管位于上述第2导体上，借助于进行球键合在上述第2导体上形成凸点的工序；
在将上述毛细管向上方移动后，将该毛细管横向移动至与上述第1导体相反一侧的位置，使上述毛细管下降，切断上述引线，在上述凸点的上部形成倾斜面的工序；
在上述第1导体上对上述引线的一端进行1次键合的工序；以及
使上述毛细管位于上述凸点上部的倾斜面上，对从上述毛细管内伸出的引线在上述毛细管的底部在上述凸点上部的倾斜面上进行2次键合，并在其结合部附近切断上述引线的工序。
4.如权利要求3所述的引线键合方法，其特征在于：
上述凸点上部的倾斜面形成为平面或凹面，
上述2次键合工序包括使上述毛细管位于上述凸点上部的倾斜面上，用该毛细管的底部在上述凸点上部的倾斜面上挤压引线。
5.如权利要求3或4所述的引线键合方法，其特征在于：
上述凸点上部的倾斜面以联结该倾斜面的两端部间的直线对第2导体面所成的倾角朝向上述第1导体形成2°～60°的张角的方式形成。
6.一种凸点形成方法，它是适合于在第1导体上进行1次键合，并且在第2导体上进行2次键合，从而在第1导体与第2导体之间进行引线键合，利用球键合预先在第2导体上形成凸点的方法，其特征在于，包括：
将毛细管下降至上述第2导体上，将在引线端部形成的小球球键合到上述第2导体上，形成凸点的工序；
之后，使上述毛细管垂直上升的工序；
之后，使上述毛细管向与上述第1导体所在方向相反的方向横向移动的工序；
之后，使上述毛细管下降，将该毛细管的底部挤压到上述凸点上的工序；以及
之后，使上述毛细管向上述第1导体的方向横向移动的工序，
在上述凸点的上部设置倾斜面。
7.如权利要求6所述的凸点形成方法，其特征在于：
上述凸点上部的倾斜面以联结该倾斜面的两端部间的直线对上述第2导体面所成的倾角朝向上述第1导体形成2°～60°的张角的方式形成。
8.一种凸点形成方法，它是适合于在第1导体上进行1次键合，并且在第2导体上进行2次键合，从而在第1导体与第2导体之间进行引线键合，利用球键合预先在第2导体上形成凸点的方法，其特征在于，包括：
将毛细管下降至上述第2导体上，将在引线端部形成的小球球键合到上述第2导体上，形成凸点的工序；
之后，使上述毛细管垂直上升的工序；
之后，使上述毛细管向上述第1导体所在方向横向移动的工序；
之后，使上述毛细管垂直上升的工序；
之后，使上述毛细管向与上述第1导体所在方向相反的方向横向移动的工序；
之后，使上述毛细管下降，将该毛细管的底部挤压到上述凸点上的工序；以及
之后，使上述毛细管向上述第1导体所在的方向横向移动的工序，
在上述凸点的上部设置倾斜面。
9.如权利要求8所述的凸点形成方法，其特征在于：
上述凸点上部的倾斜面以联结该倾斜面的两端部间的直线对第2导体面所成的倾角朝向上述第1导体形成2°～60°的张角的方式形成。
10.一种凸点，它是适合于在第1导体上进行1次键合，并且在第2导体上进行2次键合，从而在第1导体与第2导体之间进行引线键合，利用球键合预先在第2导体上形成的凸点，其特征在于：
具有在平面或凹面上形成的上表面，
该上表面以联结它的两端部间的直线对上述第2导体面所成的倾角朝向上述第1导体形成2°～60°的张角的方式形成。
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