CN1445835A - 浅沟隔离半导体及其制造 - Google Patents
浅沟隔离半导体及其制造 Download PDFInfo
- Publication number
- CN1445835A CN1445835A CN02152500A CN02152500A CN1445835A CN 1445835 A CN1445835 A CN 1445835A CN 02152500 A CN02152500 A CN 02152500A CN 02152500 A CN02152500 A CN 02152500A CN 1445835 A CN1445835 A CN 1445835A
- Authority
- CN
- China
- Prior art keywords
- silicon
- film
- nitride film
- silicon nitride
- silicon oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 57
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 238000002955 isolation Methods 0.000 title abstract description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 140
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 133
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 133
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 129
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 102
- 239000010703 silicon Substances 0.000 claims abstract description 102
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 99
- 238000000034 method Methods 0.000 claims description 53
- 238000009413 insulation Methods 0.000 claims description 42
- 238000005530 etching Methods 0.000 claims description 33
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 32
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 32
- 230000004888 barrier function Effects 0.000 claims description 19
- 238000007373 indentation Methods 0.000 claims description 19
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 16
- 239000012528 membrane Substances 0.000 claims description 12
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 11
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 230000003628 erosive effect Effects 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 239000000758 substrate Substances 0.000 abstract description 11
- 239000010408 film Substances 0.000 description 242
- 230000003647 oxidation Effects 0.000 description 26
- 238000007254 oxidation reaction Methods 0.000 description 26
- 230000008569 process Effects 0.000 description 19
- 150000002500 ions Chemical class 0.000 description 15
- 239000010409 thin film Substances 0.000 description 13
- 238000005229 chemical vapour deposition Methods 0.000 description 10
- 238000003475 lamination Methods 0.000 description 9
- 230000005684 electric field Effects 0.000 description 8
- 230000006835 compression Effects 0.000 description 7
- 238000007906 compression Methods 0.000 description 7
- 238000005498 polishing Methods 0.000 description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- 229920005591 polysilicon Polymers 0.000 description 7
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 238000011049 filling Methods 0.000 description 5
- 239000003595 mist Substances 0.000 description 5
- 230000003071 parasitic effect Effects 0.000 description 5
- 238000001020 plasma etching Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 230000012010 growth Effects 0.000 description 4
- 239000003112 inhibitor Substances 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 230000004913 activation Effects 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 150000003376 silicon Chemical class 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 230000000717 retained effect Effects 0.000 description 2
- 239000000725 suspension Substances 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 238000010306 acid treatment Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229940075614 colloidal silicon dioxide Drugs 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823481—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type isolation region manufacturing related aspects, e.g. to avoid interaction of isolation region with adjacent structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
- H01L29/7843—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate the means being an applied insulating layer
Abstract
Description
Claims (21)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002074871A JP2003273206A (ja) | 2002-03-18 | 2002-03-18 | 半導体装置とその製造方法 |
JP074871/2002 | 2002-03-18 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1445835A true CN1445835A (zh) | 2003-10-01 |
CN1208823C CN1208823C (zh) | 2005-06-29 |
Family
ID=28035335
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB021525005A Expired - Fee Related CN1208823C (zh) | 2002-03-18 | 2002-12-05 | 浅沟隔离半导体及其制造 |
Country Status (5)
Country | Link |
---|---|
US (2) | US20030173641A1 (zh) |
JP (1) | JP2003273206A (zh) |
KR (1) | KR100809841B1 (zh) |
CN (1) | CN1208823C (zh) |
TW (1) | TW589702B (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100407399C (zh) * | 2004-12-03 | 2008-07-30 | 台湾积体电路制造股份有限公司 | 调整晶体管的浅沟渠隔离结构应力的方法 |
WO2023000658A1 (zh) * | 2021-07-22 | 2023-01-26 | 长鑫存储技术有限公司 | 半导体结构及其制备方法 |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI252565B (en) * | 2002-06-24 | 2006-04-01 | Hitachi Ltd | Semiconductor device and manufacturing method thereof |
JP2004193585A (ja) | 2002-11-29 | 2004-07-08 | Fujitsu Ltd | 半導体装置の製造方法と半導体装置 |
KR100728173B1 (ko) * | 2003-03-07 | 2007-06-13 | 앰버웨이브 시스템즈 코포레이션 | 쉘로우 트렌치 분리법 |
JP4441488B2 (ja) | 2003-12-25 | 2010-03-31 | 富士通マイクロエレクトロニクス株式会社 | 半導体装置および半導体集積回路装置 |
KR100572491B1 (ko) * | 2003-12-31 | 2006-04-19 | 동부아남반도체 주식회사 | 반도체 소자의 소자분리막 형성방법 |
JP2005322859A (ja) * | 2004-05-11 | 2005-11-17 | Sony Corp | 半導体装置およびその製造方法 |
KR100620181B1 (ko) * | 2004-07-12 | 2006-09-01 | 동부일렉트로닉스 주식회사 | 플래시 메모리 셀 트랜지스터의 제조 방법 |
JP4643223B2 (ja) * | 2004-10-29 | 2011-03-02 | 株式会社東芝 | 半導体装置 |
JP4515951B2 (ja) | 2005-03-31 | 2010-08-04 | 富士通セミコンダクター株式会社 | 半導体装置及びその製造方法 |
JP4859441B2 (ja) | 2005-06-10 | 2012-01-25 | 富士通セミコンダクター株式会社 | 半導体装置およびその製造方法 |
US7586158B2 (en) * | 2005-07-07 | 2009-09-08 | Infineon Technologies Ag | Piezoelectric stress liner for bulk and SOI |
US7358551B2 (en) * | 2005-07-21 | 2008-04-15 | International Business Machines Corporation | Structure and method for improved stress and yield in pFETs with embedded SiGe source/drain regions |
US20070023845A1 (en) | 2005-07-26 | 2007-02-01 | Fujitsu Limited | Semiconductor device and method for fabricating the same |
US7863753B2 (en) * | 2006-09-20 | 2011-01-04 | Panasonic Corporation | Semiconductor device and manufacturing method thereof |
KR100843014B1 (ko) * | 2007-01-23 | 2008-07-01 | 주식회사 하이닉스반도체 | 반도체 소자의 제조 방법 |
JP2008306139A (ja) * | 2007-06-11 | 2008-12-18 | Elpida Memory Inc | 半導体装置の素子分離構造の形成方法、半導体装置の素子分離構造及び半導体記憶装置 |
KR100937661B1 (ko) * | 2007-12-24 | 2010-01-19 | 주식회사 동부하이텍 | 반도체 소자 및 이의 제조방법 |
WO2010067483A1 (ja) * | 2008-12-11 | 2010-06-17 | シャープ株式会社 | 薄膜トランジスタ及びその製造方法 |
US9142474B2 (en) | 2013-10-07 | 2015-09-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Passivation structure of fin field effect transistor |
US9287262B2 (en) * | 2013-10-10 | 2016-03-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Passivated and faceted for fin field effect transistor |
US9502499B2 (en) * | 2015-02-13 | 2016-11-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device structure having multi-layered isolation trench structures |
US9865495B2 (en) | 2015-11-05 | 2018-01-09 | Samsung Electronics Co., Ltd. | Semiconductor device and method for fabricating the same |
KR20180068229A (ko) | 2016-12-13 | 2018-06-21 | 삼성전자주식회사 | 반도체 장치 및 이의 제조 방법 |
FR3091007B1 (fr) | 2018-12-21 | 2021-03-05 | St Microelectronics Crolles 2 Sas | Fabrication de cavités |
US11469302B2 (en) | 2020-06-11 | 2022-10-11 | Atomera Incorporated | Semiconductor device including a superlattice and providing reduced gate leakage |
US11569368B2 (en) * | 2020-06-11 | 2023-01-31 | Atomera Incorporated | Method for making semiconductor device including a superlattice and providing reduced gate leakage |
US11705490B2 (en) * | 2021-02-08 | 2023-07-18 | Applied Materials, Inc. | Graded doping in power devices |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS589333A (ja) | 1981-07-08 | 1983-01-19 | Hitachi Ltd | 半導体装置 |
DE3174468D1 (en) * | 1980-09-17 | 1986-05-28 | Hitachi Ltd | Semiconductor device and method of manufacturing the same |
US4666556A (en) * | 1986-05-12 | 1987-05-19 | International Business Machines Corporation | Trench sidewall isolation by polysilicon oxidation |
US5059550A (en) * | 1988-10-25 | 1991-10-22 | Sharp Kabushiki Kaisha | Method of forming an element isolating portion in a semiconductor device |
US5447884A (en) | 1994-06-29 | 1995-09-05 | International Business Machines Corporation | Shallow trench isolation with thin nitride liner |
KR100213196B1 (ko) * | 1996-03-15 | 1999-08-02 | 윤종용 | 트렌치 소자분리 |
US6103635A (en) * | 1997-10-28 | 2000-08-15 | Fairchild Semiconductor Corp. | Trench forming process and integrated circuit device including a trench |
US20020070421A1 (en) * | 1997-12-31 | 2002-06-13 | Ashburn Stanton Petree | Embedded gettering layer in shallow trench isolation structure |
US6333274B2 (en) | 1998-03-31 | 2001-12-25 | Kabushiki Kaisha Toshiba | Method of manufacturing a semiconductor device including a seamless shallow trench isolation step |
JP3691963B2 (ja) | 1998-05-28 | 2005-09-07 | 株式会社東芝 | 半導体装置及びその製造方法 |
KR100286736B1 (ko) | 1998-06-16 | 2001-04-16 | 윤종용 | 트렌치 격리 형성 방법 |
KR100286127B1 (ko) | 1998-06-24 | 2001-04-16 | 윤종용 | 반도체 장치의 트렌치 격리 형성 방법 |
KR100297737B1 (ko) * | 1998-09-24 | 2001-11-01 | 윤종용 | 반도체소자의 트렌치 소자 분리 방법 |
KR100292616B1 (ko) | 1998-10-09 | 2001-07-12 | 윤종용 | 트렌치격리의제조방법 |
TW396520B (en) * | 1998-10-30 | 2000-07-01 | United Microelectronics Corp | Process for shallow trench isolation |
WO2000052754A1 (fr) * | 1999-03-03 | 2000-09-08 | Hitachi Ltd | Circuit integre et son procede de fabrication |
JP2000323565A (ja) | 1999-05-13 | 2000-11-24 | Mitsubishi Electric Corp | 半導体装置の製造方法及び半導体装置 |
KR100338767B1 (ko) * | 1999-10-12 | 2002-05-30 | 윤종용 | 트렌치 소자분리 구조와 이를 갖는 반도체 소자 및 트렌치 소자분리 방법 |
JP2001135718A (ja) | 1999-11-08 | 2001-05-18 | Nec Corp | トレンチ分離構造の作製方法 |
KR20020005851A (ko) * | 2000-07-10 | 2002-01-18 | 윤종용 | 트렌치 소자 분리형 반도체 장치 및 그 형성방법 |
KR100338783B1 (en) * | 2000-10-28 | 2002-06-01 | Samsung Electronics Co Ltd | Semiconductor device having expanded effective width of active region and fabricating method thereof |
KR100382728B1 (ko) * | 2000-12-09 | 2003-05-09 | 삼성전자주식회사 | 얕은 트렌치 아이솔레이션 구조를 갖는 반도체 디바이스및 그 제조방법 |
KR100428768B1 (ko) * | 2001-08-29 | 2004-04-30 | 삼성전자주식회사 | 트렌치 소자 분리형 반도체 장치 및 그 형성 방법 |
-
2002
- 2002-03-18 JP JP2002074871A patent/JP2003273206A/ja active Pending
- 2002-10-22 TW TW091124399A patent/TW589702B/zh not_active IP Right Cessation
- 2002-10-28 KR KR1020020065851A patent/KR100809841B1/ko active IP Right Grant
- 2002-10-30 US US10/283,128 patent/US20030173641A1/en not_active Abandoned
- 2002-12-05 CN CNB021525005A patent/CN1208823C/zh not_active Expired - Fee Related
-
2006
- 2006-05-15 US US11/433,671 patent/US7589391B2/en not_active Expired - Fee Related
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100407399C (zh) * | 2004-12-03 | 2008-07-30 | 台湾积体电路制造股份有限公司 | 调整晶体管的浅沟渠隔离结构应力的方法 |
WO2023000658A1 (zh) * | 2021-07-22 | 2023-01-26 | 长鑫存储技术有限公司 | 半导体结构及其制备方法 |
Also Published As
Publication number | Publication date |
---|---|
US20060202301A1 (en) | 2006-09-14 |
CN1208823C (zh) | 2005-06-29 |
KR20030076173A (ko) | 2003-09-26 |
TW589702B (en) | 2004-06-01 |
US7589391B2 (en) | 2009-09-15 |
JP2003273206A (ja) | 2003-09-26 |
KR100809841B1 (ko) | 2008-03-07 |
US20030173641A1 (en) | 2003-09-18 |
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