CN1433023A - 具有冗长修复功能的薄膜磁性体存储装置 - Google Patents
具有冗长修复功能的薄膜磁性体存储装置 Download PDFInfo
- Publication number
- CN1433023A CN1433023A CN02143452A CN02143452A CN1433023A CN 1433023 A CN1433023 A CN 1433023A CN 02143452 A CN02143452 A CN 02143452A CN 02143452 A CN02143452 A CN 02143452A CN 1433023 A CN1433023 A CN 1433023A
- Authority
- CN
- China
- Prior art keywords
- mentioned
- programming
- row
- memory cell
- data
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
- G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1653—Address circuits or decoders
- G11C11/1657—Word-line or row circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
- G11C29/785—Masking faults in memories by using spares or by reconfiguring using programmable devices with redundancy programming schemes
- G11C29/789—Masking faults in memories by using spares or by reconfiguring using programmable devices with redundancy programming schemes using non-volatile cells or latches
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/143—Detection of memory cassette insertion or removal; Continuity checks of supply or ground lines; Detection of supply variations, interruptions or levels ; Switching between alternative supplies
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Hall/Mr Elements (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
Claims (8)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6424/02 | 2002-01-15 | ||
JP2002006424A JP2003208796A (ja) | 2002-01-15 | 2002-01-15 | 薄膜磁性体記憶装置 |
JP6424/2002 | 2002-01-15 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1433023A true CN1433023A (zh) | 2003-07-30 |
CN1302482C CN1302482C (zh) | 2007-02-28 |
Family
ID=19191226
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB021434522A Expired - Fee Related CN1302482C (zh) | 2002-01-15 | 2002-09-26 | 具有冗长修复功能的薄膜磁性体存储装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US6671213B2 (zh) |
JP (1) | JP2003208796A (zh) |
KR (1) | KR100501126B1 (zh) |
CN (1) | CN1302482C (zh) |
DE (1) | DE10238782A1 (zh) |
TW (1) | TW569239B (zh) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003197769A (ja) * | 2001-12-21 | 2003-07-11 | Mitsubishi Electric Corp | 半導体記憶装置 |
JP4208507B2 (ja) * | 2002-02-04 | 2009-01-14 | 株式会社ルネサステクノロジ | 薄膜磁性体記憶装置 |
US6940748B2 (en) * | 2002-05-16 | 2005-09-06 | Micron Technology, Inc. | Stacked 1T-nMTJ MRAM structure |
WO2003098636A2 (en) * | 2002-05-16 | 2003-11-27 | Micron Technology, Inc. | STACKED 1T-nMEMORY CELL STRUCTURE |
US6882553B2 (en) * | 2002-08-08 | 2005-04-19 | Micron Technology Inc. | Stacked columnar resistive memory structure and its method of formation and operation |
JP4405162B2 (ja) * | 2003-02-14 | 2010-01-27 | 株式会社ルネサステクノロジ | 薄膜磁性体記憶装置 |
US20050086471A1 (en) * | 2003-10-20 | 2005-04-21 | Spencer Andrew M. | Removable information storage device that includes a master encryption key and encryption keys |
JP4641726B2 (ja) * | 2004-01-07 | 2011-03-02 | パナソニック株式会社 | 半導体記憶装置 |
JP4607685B2 (ja) * | 2005-06-30 | 2011-01-05 | 富士通セミコンダクター株式会社 | 半導体メモリ |
JP4822828B2 (ja) * | 2005-12-13 | 2011-11-24 | ルネサスエレクトロニクス株式会社 | 不揮発性記憶装置 |
US7362644B2 (en) * | 2005-12-20 | 2008-04-22 | Magic Technologies, Inc. | Configurable MRAM and method of configuration |
TWI316712B (en) * | 2006-06-27 | 2009-11-01 | Silicon Motion Inc | Non-volatile memory, repair circuit, and repair method thereof |
KR100933839B1 (ko) * | 2008-03-10 | 2009-12-24 | 주식회사 하이닉스반도체 | 불휘발성 메모리 소자 및 그 동작 방법 |
TWI408697B (zh) | 2009-08-05 | 2013-09-11 | Etron Technology Inc | 記憶體裝置與記憶體控制方法 |
CN101916214B (zh) * | 2010-07-28 | 2013-03-20 | 钰创科技股份有限公司 | 存储器装置与存储器控制方法 |
US8638596B2 (en) * | 2011-07-25 | 2014-01-28 | Qualcomm Incorporated | Non-volatile memory saving cell information in a non-volatile memory array |
KR20130021760A (ko) | 2011-08-23 | 2013-03-06 | 삼성전자주식회사 | 자기터널접합 브레이크 다운을 이용한 안티퓨즈 회로, 및 이를 포함하는 반도체 장치 |
JP2012119058A (ja) * | 2012-02-13 | 2012-06-21 | Fujitsu Semiconductor Ltd | 不揮発性半導体メモリ |
KR102003851B1 (ko) * | 2012-08-31 | 2019-10-01 | 에스케이하이닉스 주식회사 | 메모리 및 이를 포함하는 메모리 시스템 |
US9543041B2 (en) | 2014-08-29 | 2017-01-10 | Everspin Technologies, Inc. | Configuration and testing for magnetoresistive memory to ensure long term continuous operation |
US9799412B2 (en) * | 2014-09-30 | 2017-10-24 | Sony Semiconductor Solutions Corporation | Memory having a plurality of memory cells and a plurality of word lines |
JP7310302B2 (ja) * | 2019-05-24 | 2023-07-19 | 富士通セミコンダクターメモリソリューション株式会社 | 半導体記憶装置 |
EP4030436B1 (en) * | 2020-10-20 | 2024-05-29 | Changxin Memory Technologies, Inc. | Repair circuit and memory |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5452251A (en) * | 1992-12-03 | 1995-09-19 | Fujitsu Limited | Semiconductor memory device for selecting and deselecting blocks of word lines |
JP2914171B2 (ja) * | 1994-04-25 | 1999-06-28 | 松下電器産業株式会社 | 半導体メモリ装置およびその駆動方法 |
JPH08279299A (ja) | 1995-04-04 | 1996-10-22 | Toshiba Microelectron Corp | 半導体集積回路および半導体メモリ |
US6259644B1 (en) * | 1997-11-20 | 2001-07-10 | Hewlett-Packard Co | Equipotential sense methods for resistive cross point memory cell arrays |
JPH11232895A (ja) * | 1998-02-18 | 1999-08-27 | Matsushita Electric Ind Co Ltd | 不揮発性メモリ |
JP3848004B2 (ja) * | 1999-03-11 | 2006-11-22 | 株式会社東芝 | 半導体メモリ装置及び半導体メモリ装置搭載システム |
JP3701160B2 (ja) * | 1999-12-24 | 2005-09-28 | シャープ株式会社 | 冗長機能を有する不揮発性半導体メモリ装置 |
US6256237B1 (en) * | 1999-12-28 | 2001-07-03 | United Microelectronics Corp. | Semiconductor device and method for repairing failed memory cell by directly programming fuse memory cell |
-
2002
- 2002-01-15 JP JP2002006424A patent/JP2003208796A/ja active Pending
- 2002-07-15 US US10/194,256 patent/US6671213B2/en not_active Expired - Lifetime
- 2002-08-23 DE DE10238782A patent/DE10238782A1/de not_active Withdrawn
- 2002-09-10 TW TW091120558A patent/TW569239B/zh not_active IP Right Cessation
- 2002-09-25 KR KR10-2002-0058104A patent/KR100501126B1/ko not_active IP Right Cessation
- 2002-09-26 CN CNB021434522A patent/CN1302482C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US6671213B2 (en) | 2003-12-30 |
CN1302482C (zh) | 2007-02-28 |
US20030133334A1 (en) | 2003-07-17 |
DE10238782A1 (de) | 2003-07-31 |
TW569239B (en) | 2004-01-01 |
JP2003208796A (ja) | 2003-07-25 |
KR100501126B1 (ko) | 2005-07-18 |
KR20030062210A (ko) | 2003-07-23 |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: RENESAS ELECTRONICS CORPORATION Free format text: FORMER OWNER: MISSUBISHI ELECTRIC CORP. Effective date: 20140416 |
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C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20140416 Address after: Kawasaki, Kanagawa, Japan Patentee after: Renesas Electronics Corporation Address before: Tokyo, Japan, Japan Patentee before: Missubishi Electric Co., Ltd. |
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CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20070228 Termination date: 20160926 |