CN1421869A - 强介质存储器及其动作方法 - Google Patents
强介质存储器及其动作方法 Download PDFInfo
- Publication number
- CN1421869A CN1421869A CN02154317.8A CN02154317A CN1421869A CN 1421869 A CN1421869 A CN 1421869A CN 02154317 A CN02154317 A CN 02154317A CN 1421869 A CN1421869 A CN 1421869A
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- mentioned
- strong medium
- storage unit
- voltage
- pulse
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- 238000000034 method Methods 0.000 title claims description 34
- 239000003990 capacitor Substances 0.000 claims abstract description 93
- 238000006891 umpolung reaction Methods 0.000 claims description 40
- 239000004065 semiconductor Substances 0.000 claims description 36
- 230000002146 bilateral effect Effects 0.000 claims description 21
- 239000002184 metal Substances 0.000 claims description 20
- 229910052751 metal Inorganic materials 0.000 claims description 20
- 229910052759 nickel Inorganic materials 0.000 claims description 10
- 229910052702 rhenium Inorganic materials 0.000 claims description 10
- 229910052707 ruthenium Inorganic materials 0.000 claims description 10
- 229910052741 iridium Inorganic materials 0.000 claims description 9
- 229910052697 platinum Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 230000005669 field effect Effects 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims 2
- 238000010586 diagram Methods 0.000 description 19
- 239000011159 matrix material Substances 0.000 description 17
- 230000000694 effects Effects 0.000 description 14
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000005755 formation reaction Methods 0.000 description 5
- 238000006116 polymerization reaction Methods 0.000 description 5
- 239000012212 insulator Substances 0.000 description 4
- 230000004044 response Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000000265 homogenisation Methods 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
- 230000007306 turnover Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Dram (AREA)
- Non-Volatile Memory (AREA)
Abstract
Description
Claims (20)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001366527 | 2001-11-30 | ||
JP2001366527A JP2003173673A (ja) | 2001-11-30 | 2001-11-30 | 強誘電体メモリ |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1421869A true CN1421869A (zh) | 2003-06-04 |
CN100412986C CN100412986C (zh) | 2008-08-20 |
Family
ID=19176409
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB021543178A Expired - Fee Related CN100412986C (zh) | 2001-11-30 | 2002-11-29 | 强介质存储器及其动作方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7167386B2 (zh) |
JP (1) | JP2003173673A (zh) |
CN (1) | CN100412986C (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1969338B (zh) * | 2004-06-23 | 2012-03-21 | 帕特兰尼拉财富有限公司 | 存储器 |
CN103367365A (zh) * | 2012-03-30 | 2013-10-23 | 成都海存艾匹科技有限公司 | 小晶粒三维存储器 |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3680282B2 (ja) | 2002-07-23 | 2005-08-10 | 松下電器産業株式会社 | 強誘電体ゲートデバイス |
US7193880B2 (en) * | 2004-06-14 | 2007-03-20 | Texas Instruments Incorporated | Plateline voltage pulsing to reduce storage node disturbance in ferroelectric memory |
KR100583114B1 (ko) * | 2003-12-10 | 2006-05-23 | 주식회사 하이닉스반도체 | 하이브리드 스위치 셀 및 이를 이용한 메모리 장치 |
KR100527537B1 (ko) * | 2003-12-22 | 2005-11-09 | 주식회사 하이닉스반도체 | 직렬 다이오드 셀 및 이를 이용한 불휘발성 메모리 장치 |
US7009864B2 (en) * | 2003-12-29 | 2006-03-07 | Texas Instruments Incorporated | Zero cancellation scheme to reduce plateline voltage in ferroelectric memory |
KR100527556B1 (ko) * | 2004-01-29 | 2005-11-09 | 주식회사 하이닉스반도체 | 직렬 다이오드 셀을 이용한 불휘발성 메모리 장치 |
KR100596850B1 (ko) * | 2004-02-05 | 2006-07-04 | 주식회사 하이닉스반도체 | 하이브리드 스위치 셀을 이용한 불휘발성 메모리 장치 |
KR100709463B1 (ko) * | 2004-02-16 | 2007-04-18 | 주식회사 하이닉스반도체 | 나노 튜브 셀을 이용한 메모리 장치 |
KR100694426B1 (ko) * | 2004-02-16 | 2007-03-12 | 주식회사 하이닉스반도체 | 나노 튜브 셀 및 이를 이용한 메모리 장치 |
KR100709462B1 (ko) * | 2004-02-16 | 2007-04-18 | 주식회사 하이닉스반도체 | 다층 나노 튜브 셀을 이용한 메모리 장치 |
US7133304B2 (en) * | 2004-03-22 | 2006-11-07 | Texas Instruments Incorporated | Method and apparatus to reduce storage node disturbance in ferroelectric memory |
KR100626912B1 (ko) * | 2004-04-23 | 2006-09-20 | 주식회사 하이닉스반도체 | 불휘발성 강유전체 수직 전극 셀과 수직 전극 셀을 이용한불휘발성 강유전체 메모리 장치 및 그 수직 전극 셀 제조방법 |
US6970371B1 (en) * | 2004-05-17 | 2005-11-29 | Texas Instruments Incorporated | Reference generator system and methods for reading ferroelectric memory cells using reduced bitline voltages |
US7561458B2 (en) * | 2006-12-26 | 2009-07-14 | Texas Instruments Incorporated | Ferroelectric memory array for implementing a zero cancellation scheme to reduce plateline voltage in ferroelectric memory |
KR100904737B1 (ko) | 2007-12-20 | 2009-06-26 | 주식회사 하이닉스반도체 | 문턱전압 스위칭소자를 구비하는 반도체 메모리장치 및정보저장 방법 |
US7920404B2 (en) | 2007-12-31 | 2011-04-05 | Texas Instruments Incorporated | Ferroelectric memory devices with partitioned platelines |
US8743591B2 (en) * | 2011-04-26 | 2014-06-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor memory device and method for driving the same |
JP6213092B2 (ja) * | 2012-12-17 | 2017-10-18 | 凸版印刷株式会社 | 不揮発性フリップフロップ、不揮発性ラッチおよび不揮発性メモリ素子 |
US8824190B1 (en) | 2013-03-05 | 2014-09-02 | International Business Machines Corporation | Memory state sensing based on cell capacitance |
JP6232821B2 (ja) * | 2013-08-07 | 2017-11-22 | 凸版印刷株式会社 | 不揮発性フリップフロップ、不揮発性ラッチおよび不揮発性メモリ素子 |
US9613676B1 (en) | 2016-06-29 | 2017-04-04 | Micron Technology, Inc. | Writing to cross-point non-volatile memory |
KR102578816B1 (ko) * | 2018-03-16 | 2023-09-15 | 에스케이하이닉스 주식회사 | 강유전성 메모리 장치 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6163846A (ja) * | 1984-09-05 | 1986-04-02 | Mitsubishi Chem Ind Ltd | 電子写真用感光体 |
JPH03108769A (ja) | 1989-09-22 | 1991-05-08 | Olympus Optical Co Ltd | 強誘電体メモリ |
JP3024995B2 (ja) | 1990-11-02 | 2000-03-27 | オリンパス光学工業株式会社 | Mim構造半導体メモリ |
US5666305A (en) * | 1993-03-29 | 1997-09-09 | Olympus Optical Co., Ltd. | Method of driving ferroelectric gate transistor memory cell |
JPH07106450A (ja) | 1993-10-08 | 1995-04-21 | Olympus Optical Co Ltd | 強誘電体ゲートトランジスタメモリ |
US5478610A (en) * | 1994-09-02 | 1995-12-26 | Ceram Incorporated | Metalorganic chemical vapor deposition of layered structure oxides |
JPH0991970A (ja) | 1995-09-26 | 1997-04-04 | Olympus Optical Co Ltd | 非破壊型強誘電体メモリ及びその駆動方法 |
US5621680A (en) * | 1996-04-01 | 1997-04-15 | Motorola, Inc. | Data storage element and method for reading data therefrom |
US5986919A (en) * | 1997-11-14 | 1999-11-16 | Ramtron International Corporation | Reference cell configuration for a 1T/1C ferroelectric memory |
DE19925233A1 (de) * | 1998-06-08 | 1999-12-09 | Siemens Ag | Halbleiteranordnung mit ohmscher Kontaktierung und Verfahren zur Kontaktierung einer Halbleiteranordnung |
JP2001015771A (ja) * | 1999-07-01 | 2001-01-19 | Shindengen Electric Mfg Co Ltd | 半導体整流素子 |
-
2001
- 2001-11-30 JP JP2001366527A patent/JP2003173673A/ja active Pending
-
2002
- 2002-11-27 US US10/304,691 patent/US7167386B2/en not_active Expired - Lifetime
- 2002-11-29 CN CNB021543178A patent/CN100412986C/zh not_active Expired - Fee Related
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1969338B (zh) * | 2004-06-23 | 2012-03-21 | 帕特兰尼拉财富有限公司 | 存储器 |
CN103367365A (zh) * | 2012-03-30 | 2013-10-23 | 成都海存艾匹科技有限公司 | 小晶粒三维存储器 |
CN103367365B (zh) * | 2012-03-30 | 2015-09-02 | 成都海存艾匹科技有限公司 | 小晶粒三维存储器 |
Also Published As
Publication number | Publication date |
---|---|
US7167386B2 (en) | 2007-01-23 |
US20030103372A1 (en) | 2003-06-05 |
JP2003173673A (ja) | 2003-06-20 |
CN100412986C (zh) | 2008-08-20 |
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Legal Events
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PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: PATE LANNILA FORTUNE CO., LTD. Free format text: FORMER OWNER: SANYO ELECTRIC CO., LTD. Effective date: 20101223 |
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Free format text: CORRECT: ADDRESS; FROM: OSAKA PREFECTURE, JAPAN TO: DELAWARE, USA |
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Effective date of registration: 20101223 Address after: Delaware Patentee after: Sanyo Electric Co. Address before: Osaka Japan Patentee before: Sanyo Electric Co., Ltd. |
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CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20080820 Termination date: 20131129 |