CN1328295C - 用于形成精细图形的助剂及其制备方法 - Google Patents
用于形成精细图形的助剂及其制备方法 Download PDFInfo
- Publication number
- CN1328295C CN1328295C CNB2004800077756A CN200480007775A CN1328295C CN 1328295 C CN1328295 C CN 1328295C CN B2004800077756 A CNB2004800077756 A CN B2004800077756A CN 200480007775 A CN200480007775 A CN 200480007775A CN 1328295 C CN1328295 C CN 1328295C
- Authority
- CN
- China
- Prior art keywords
- water
- polyvinyl alcohol
- modified polyvinyl
- resist pattern
- weight
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F16/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an alcohol, ether, aldehydo, ketonic, acetal or ketal radical
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F8/00—Chemical modification by after-treatment
- C08F8/28—Condensation with aldehydes or ketones
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F8/00—Chemical modification by after-treatment
- C08F8/30—Introducing nitrogen atoms or nitrogen-containing groups
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F2810/00—Chemical modification of a polymer
- C08F2810/20—Chemical modification of a polymer leading to a crosslinking, either explicitly or inherently
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F8/00—Chemical modification by after-treatment
- C08F8/44—Preparation of metal salts or ammonium salts
Abstract
Description
聚合物 | 加热温度(℃) | 加热时间(分钟) | 高分子量主体成分的数量 | 可滤性的评价 | |
实施例1 | B | 100 | 180 | 100或更少 | ○ |
实施例2 | C | 100 | 15 | 100或更少 | ○ |
实施例3 | D | 80 | 180 | 300 | ○ |
对比例1 | A | - | - | 2700 | X |
对比例2 | E | 60 | 180 | 2400 | X |
聚合物 | 高分子量主体成分的数量(ppm) | 涂覆后的缺陷数目(个/晶片) | 显影后的缺陷数目(个/晶片) | |
实施例4 | B | 100或更少 | 50 | 65 |
实施例5 | C | 100或更少 | 55 | 72 |
实施例6 | D | 300 | 75 | 84 |
对比例3 | A | 2700 | 160 | 183 |
对比例4 | E | 2400 | 112 | 146 |
贮存前 | 贮存两周后 | 贮存1月后 | |||
5℃贮存 | 25℃贮存 | 5℃贮存 | 25℃贮存 | ||
实施例7 | 100或更少 | 100 | 200 | 200 | 200 |
对比例5 | 100或更少 | 4000 | 5800 | 9900 | 10800 |
Claims (3)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003090376A JP4012480B2 (ja) | 2003-03-28 | 2003-03-28 | 微細パターン形成補助剤及びその製造法 |
JP090376/2003 | 2003-03-28 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1764675A CN1764675A (zh) | 2006-04-26 |
CN1328295C true CN1328295C (zh) | 2007-07-25 |
Family
ID=33127261
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004800077756A Expired - Fee Related CN1328295C (zh) | 2003-03-28 | 2004-03-18 | 用于形成精细图形的助剂及其制备方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7598320B2 (zh) |
JP (1) | JP4012480B2 (zh) |
KR (1) | KR101059378B1 (zh) |
CN (1) | CN1328295C (zh) |
DE (1) | DE112004000774T5 (zh) |
TW (1) | TW200428166A (zh) |
WO (1) | WO2004087773A1 (zh) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4235466B2 (ja) * | 2003-02-24 | 2009-03-11 | Azエレクトロニックマテリアルズ株式会社 | 水溶性樹脂組成物、パターン形成方法及びレジストパターンの検査方法 |
JP4012480B2 (ja) | 2003-03-28 | 2007-11-21 | Azエレクトロニックマテリアルズ株式会社 | 微細パターン形成補助剤及びその製造法 |
JP2005003840A (ja) * | 2003-06-11 | 2005-01-06 | Clariant Internatl Ltd | 微細パターン形成材料および微細パターン形成方法 |
KR101076623B1 (ko) * | 2003-07-17 | 2011-10-27 | 에이제토 엘렉토로닉 마티리알즈 가부시키가이샤 | 미세 패턴 형성 재료 및 이를 사용한 미세 패턴 형성방법 |
JP4679997B2 (ja) * | 2004-08-31 | 2011-05-11 | Azエレクトロニックマテリアルズ株式会社 | 微細パターン形成方法 |
US7595141B2 (en) * | 2004-10-26 | 2009-09-29 | Az Electronic Materials Usa Corp. | Composition for coating over a photoresist pattern |
KR100876783B1 (ko) * | 2007-01-05 | 2009-01-09 | 주식회사 하이닉스반도체 | 반도체 소자의 미세 패턴 형성 방법 |
US7923200B2 (en) * | 2007-04-09 | 2011-04-12 | Az Electronic Materials Usa Corp. | Composition for coating over a photoresist pattern comprising a lactam |
JP5069494B2 (ja) * | 2007-05-01 | 2012-11-07 | AzエレクトロニックマテリアルズIp株式会社 | 微細化パターン形成用水溶性樹脂組成物およびこれを用いた微細パターン形成方法 |
US8685627B2 (en) | 2007-12-20 | 2014-04-01 | Hynix Semiconductor Inc. | Method for manufacturing a semiconductor device |
KR101024712B1 (ko) * | 2007-12-20 | 2011-03-24 | 주식회사 하이닉스반도체 | 반도체 소자의 형성 방법 |
US7745077B2 (en) * | 2008-06-18 | 2010-06-29 | Az Electronic Materials Usa Corp. | Composition for coating over a photoresist pattern |
JP4826840B2 (ja) | 2009-01-15 | 2011-11-30 | 信越化学工業株式会社 | パターン形成方法 |
JP4826846B2 (ja) | 2009-02-12 | 2011-11-30 | 信越化学工業株式会社 | パターン形成方法 |
JP6108832B2 (ja) | 2011-12-31 | 2017-04-05 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC | フォトレジストパターントリミング方法 |
US8686109B2 (en) * | 2012-03-09 | 2014-04-01 | Az Electronic Materials (Luxembourg) S.A.R.L. | Methods and materials for removing metals in block copolymers |
CN105085722A (zh) * | 2015-08-12 | 2015-11-25 | 内蒙古蒙维科技有限公司 | 一种去除聚乙烯醇水溶液中杂质离子的方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51125154A (en) * | 1974-12-25 | 1976-11-01 | Kuraray Co Ltd | A process for preparing polyvinyl alcohol with a limited distribution of molecular weight |
JPH03200805A (ja) * | 1989-12-28 | 1991-09-02 | Sekisui Chem Co Ltd | 水溶性ポリビニルアセタールの精製方法 |
JP2001089520A (ja) * | 1999-09-20 | 2001-04-03 | Sekisui Chem Co Ltd | ポリビニルアセタール樹脂の製造方法 |
CN1314931A (zh) * | 1999-06-29 | 2001-09-26 | 克拉瑞特国际有限公司 | 水溶性树脂组合物 |
Family Cites Families (72)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3104205A (en) | 1959-12-17 | 1963-09-17 | Warner Lambert Pharmaceutical | Deodorant composition comprising the copper complex of the copolymer of allylamine and methacrylic acid |
US3666473A (en) | 1970-10-06 | 1972-05-30 | Ibm | Positive photoresists for projection exposure |
JPS51125155A (en) * | 1974-12-25 | 1976-11-01 | Kuraray Co Ltd | A process for preparing polyvinyl alcohol with a narrow distribution o f molecular weight |
JPS6022145A (ja) * | 1983-07-18 | 1985-02-04 | Canon Inc | 画像形成法 |
JPH0337974Y2 (zh) | 1985-04-16 | 1991-08-12 | ||
ZA874414B (en) | 1986-06-20 | 1989-02-22 | Minnesota Mining & Mfg | Block copolymer,method of making the same,diamine precursors of the same method,method of making such diamines and end products comprising the block |
JP2590342B2 (ja) | 1986-11-08 | 1997-03-12 | 住友化学工業株式会社 | ポジ型フォトレジスト用ノボラック樹脂及びそれを含有するポジ型フォトレジスト組成物 |
JPH0713094B2 (ja) * | 1987-05-09 | 1995-02-15 | 日本合成化学工業株式会社 | 超低分子量ポリビニルアルコ−ルの製造法 |
US4823345A (en) | 1987-06-15 | 1989-04-18 | International Business Machines Corp. | Method and apparatus for communication network alert record identification |
US4873176A (en) | 1987-08-28 | 1989-10-10 | Shipley Company Inc. | Reticulation resistant photoresist coating |
JPH01221750A (ja) | 1988-02-29 | 1989-09-05 | Hoya Corp | パターン形成又は修正方法 |
JPH0825861B2 (ja) | 1989-04-24 | 1996-03-13 | サンスター株式会社 | 歯磨組成物 |
JP3008212B2 (ja) | 1990-11-26 | 2000-02-14 | 花王株式会社 | 透明ないし半透明の化粧料 |
JP3000745B2 (ja) | 1991-09-19 | 2000-01-17 | 富士通株式会社 | レジスト組成物とレジストパターンの形成方法 |
JP3057879B2 (ja) | 1992-02-28 | 2000-07-04 | 株式会社日立製作所 | 半導体装置の製造方法 |
JP3219165B2 (ja) | 1992-08-31 | 2001-10-15 | ティーディーケイ株式会社 | 金属膜パターン形成方法 |
JP3340493B2 (ja) | 1993-02-26 | 2002-11-05 | 沖電気工業株式会社 | パターン形成方法、位相シフト法用ホトマスクの形成方法 |
FI96149C (fi) * | 1994-05-25 | 1996-05-10 | Seppo Metsaelae | Hienomekaaninen säätölaite |
US6080707A (en) | 1995-02-15 | 2000-06-27 | The Procter & Gamble Company | Crystalline hydroxy waxes as oil in water stabilizers for skin cleansing liquid composition |
US5882494A (en) | 1995-03-27 | 1999-03-16 | Minimed, Inc. | Polyurethane/polyurea compositions containing silicone for biosensor membranes |
ES2178708T3 (es) | 1995-04-25 | 2003-01-01 | Minnesota Mining & Mfg | Copolimeros segmentados de polidiorganosiloxanos y poliurea, y un procedimiento para obtenerlos. |
US5547812A (en) | 1995-06-05 | 1996-08-20 | International Business Machines Corporation | Composition for eliminating microbridging in chemically amplified photoresists comprising a polymer blend of a poly(hydroxystyrene) and a copolymer made of hydroxystyrene and an acrylic monomer |
US5820491A (en) | 1996-02-07 | 1998-10-13 | Ppg Industries, Inc. | Abrasion resistant urethane topcoat |
JP3494261B2 (ja) | 1996-02-29 | 2004-02-09 | 日東紡績株式会社 | N−アリルウレタン系重合体およびその製造方法 |
RU2194295C2 (ru) | 1996-03-07 | 2002-12-10 | З Би. Эф. Гудрич Кампэни | Фоторезистная композиция и полимер |
US5843624A (en) | 1996-03-08 | 1998-12-01 | Lucent Technologies Inc. | Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material |
JPH09244262A (ja) | 1996-03-12 | 1997-09-19 | Nippon Zeon Co Ltd | 感光性印刷版用水性現像液 |
WO1997040103A1 (en) | 1996-04-25 | 1997-10-30 | Minnesota Mining And Manufacturing Company | Silicone compositions containing a silicone-urea segmented copolymer |
US6441118B2 (en) | 1996-04-25 | 2002-08-27 | 3M Innovative Properties Company | Polydiorganosiloxane oligourea segmented copolymers and a process for making same |
JPH09325502A (ja) | 1996-06-05 | 1997-12-16 | Nippon Paint Co Ltd | 感光性樹脂組成物の現像方法 |
JP3071401B2 (ja) | 1996-07-05 | 2000-07-31 | 三菱電機株式会社 | 微細パターン形成材料及びこれを用いた半導体装置の製造方法並びに半導体装置 |
TW329539B (en) | 1996-07-05 | 1998-04-11 | Mitsubishi Electric Corp | The semiconductor device and its manufacturing method |
EP0939618B1 (en) | 1996-07-10 | 2002-09-11 | Steris Inc. | Triclosan skin wash with enhanced efficacy |
JPH10120968A (ja) | 1996-08-28 | 1998-05-12 | Hitachi Chem Co Ltd | レジスト保護膜用樹脂組成物、レジスト保護膜及びこれを用いたパターン製造法 |
JP3134255B2 (ja) | 1996-10-02 | 2001-02-13 | 三洋化成工業株式会社 | 感光性組成物及びその使用 |
JP3822688B2 (ja) | 1996-12-02 | 2006-09-20 | 積水化学工業株式会社 | ポリビニルアセタール樹脂の製造方法 |
US5863707A (en) | 1997-02-11 | 1999-01-26 | Advanced Micro Devices, Inc. | Method for producing ultra-fine interconnection features |
TW372337B (en) | 1997-03-31 | 1999-10-21 | Mitsubishi Electric Corp | Material for forming micropattern and manufacturing method of semiconductor using the material and semiconductor apparatus |
JPH10338713A (ja) * | 1997-06-09 | 1998-12-22 | Sekisui Chem Co Ltd | ポリビニルアセタール系樹脂の製造方法及び該製造方法で得られたポリビニルアセタール系樹脂 |
TW526390B (en) | 1997-06-26 | 2003-04-01 | Shinetsu Chemical Co | Resist compositions |
JPH1138642A (ja) | 1997-07-17 | 1999-02-12 | Hitachi Chem Co Ltd | 感光性永久マスクパターンの製造法及び現像液 |
JP3189773B2 (ja) | 1998-01-09 | 2001-07-16 | 三菱電機株式会社 | レジストパターン形成方法及びこれを用いた半導体装置の製造方法並びに半導体装置 |
US6180244B1 (en) | 1998-02-17 | 2001-01-30 | 3M Innovative Properties Company | Waterbased thermoforming adhesives |
JP3924910B2 (ja) | 1998-03-31 | 2007-06-06 | 三菱電機株式会社 | 半導体装置の製造方法 |
TW457277B (en) | 1998-05-11 | 2001-10-01 | Shinetsu Chemical Co | Ester compounds, polymers, resist composition and patterning process |
JP2001109165A (ja) | 1999-10-05 | 2001-04-20 | Clariant (Japan) Kk | パターン形成方法 |
JP2001228616A (ja) | 2000-02-16 | 2001-08-24 | Mitsubishi Electric Corp | 微細パターン形成材料及びこれを用いた半導体装置の製造方法 |
TW507116B (en) | 2000-04-04 | 2002-10-21 | Sumitomo Chemical Co | Chemically amplified positive resist composition |
JP2001304841A (ja) | 2000-04-26 | 2001-10-31 | Sumitomo Chem Co Ltd | レジストパターンの寸法測定方法 |
EP1302813A4 (en) | 2000-06-21 | 2005-02-23 | Asahi Glass Co Ltd | RESIST COMPOSITION |
JP4412440B2 (ja) | 2000-07-07 | 2010-02-10 | 信越化学工業株式会社 | 微細パターン形成材料並びにこれを用いた微細めっきパターン形成方法および半導体装置の製造方法 |
US6447980B1 (en) | 2000-07-19 | 2002-09-10 | Clariant Finance (Bvi) Limited | Photoresist composition for deep UV and process thereof |
JP2002049161A (ja) | 2000-08-04 | 2002-02-15 | Clariant (Japan) Kk | 被覆層現像用界面活性剤水溶液 |
US6365332B1 (en) | 2000-09-07 | 2002-04-02 | Eastman Kodak Company | Photographic bleaching compositions and method of processing color reversal elements |
DE60223654T2 (de) | 2001-02-09 | 2008-10-30 | Asahi Glass Co., Ltd. | Resistzusammensetzung |
DE10209024A1 (de) | 2001-03-07 | 2002-09-19 | Inctec Inc | Photoempfindliche Zusammensetzungen |
DE10113980A1 (de) | 2001-03-22 | 2002-10-02 | Consortium Elektrochem Ind | Silanterminiertes Polydiorganosiloxan-Urethan-Copolymer |
US20030008968A1 (en) | 2001-07-05 | 2003-01-09 | Yoshiki Sugeta | Method for reducing pattern dimension in photoresist layer |
DE10137855A1 (de) | 2001-08-02 | 2003-02-27 | Consortium Elektrochem Ind | Organopolysiloxan/Polyharnstoff/ Polyurethan-Blockcopolymere |
DE10141235A1 (de) | 2001-08-23 | 2003-03-27 | Consortium Elektrochem Ind | Feuchtigkeitsvernetzende elastische Zusammensetzung |
JP4237430B2 (ja) | 2001-09-13 | 2009-03-11 | Azエレクトロニックマテリアルズ株式会社 | エッチング方法及びエッチング保護層形成用組成物 |
JP2003140363A (ja) | 2001-10-31 | 2003-05-14 | Matsushita Electric Ind Co Ltd | パターン形成方法 |
US20030102285A1 (en) | 2001-11-27 | 2003-06-05 | Koji Nozaki | Resist pattern thickening material, resist pattern and forming method thereof, and semiconductor device and manufacturing method thereof |
US20030129538A1 (en) | 2002-01-09 | 2003-07-10 | Macronix International Co., Ltd. | Method for eliminating corner round profile of the RELACS process |
JP3850772B2 (ja) | 2002-08-21 | 2006-11-29 | 富士通株式会社 | レジストパターン厚肉化材料、レジストパターンの製造方法、及び半導体装置の製造方法 |
JP4235466B2 (ja) | 2003-02-24 | 2009-03-11 | Azエレクトロニックマテリアルズ株式会社 | 水溶性樹脂組成物、パターン形成方法及びレジストパターンの検査方法 |
JP4012480B2 (ja) | 2003-03-28 | 2007-11-21 | Azエレクトロニックマテリアルズ株式会社 | 微細パターン形成補助剤及びその製造法 |
JP2005003840A (ja) | 2003-06-11 | 2005-01-06 | Clariant Internatl Ltd | 微細パターン形成材料および微細パターン形成方法 |
KR101076623B1 (ko) | 2003-07-17 | 2011-10-27 | 에이제토 엘렉토로닉 마티리알즈 가부시키가이샤 | 미세 패턴 형성 재료 및 이를 사용한 미세 패턴 형성방법 |
JP4485241B2 (ja) | 2004-04-09 | 2010-06-16 | Azエレクトロニックマテリアルズ株式会社 | 水溶性樹脂組成物およびそれを用いたパターン形成方法 |
WO2006010986A1 (en) * | 2004-07-15 | 2006-02-02 | Nokia Corporation | In-band set-up and configuration of transfer-related resources |
US7595141B2 (en) | 2004-10-26 | 2009-09-29 | Az Electronic Materials Usa Corp. | Composition for coating over a photoresist pattern |
-
2003
- 2003-03-28 JP JP2003090376A patent/JP4012480B2/ja not_active Expired - Lifetime
-
2004
- 2004-03-18 CN CNB2004800077756A patent/CN1328295C/zh not_active Expired - Fee Related
- 2004-03-18 WO PCT/JP2004/003650 patent/WO2004087773A1/ja active Application Filing
- 2004-03-18 KR KR1020057018341A patent/KR101059378B1/ko active IP Right Grant
- 2004-03-18 DE DE112004000774T patent/DE112004000774T5/de not_active Withdrawn
- 2004-03-18 US US10/550,110 patent/US7598320B2/en not_active Expired - Fee Related
- 2004-03-26 TW TW093108220A patent/TW200428166A/zh unknown
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51125154A (en) * | 1974-12-25 | 1976-11-01 | Kuraray Co Ltd | A process for preparing polyvinyl alcohol with a limited distribution of molecular weight |
JPH03200805A (ja) * | 1989-12-28 | 1991-09-02 | Sekisui Chem Co Ltd | 水溶性ポリビニルアセタールの精製方法 |
CN1314931A (zh) * | 1999-06-29 | 2001-09-26 | 克拉瑞特国际有限公司 | 水溶性树脂组合物 |
JP2001089520A (ja) * | 1999-09-20 | 2001-04-03 | Sekisui Chem Co Ltd | ポリビニルアセタール樹脂の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
KR101059378B1 (ko) | 2011-08-26 |
JP2004294992A (ja) | 2004-10-21 |
JP4012480B2 (ja) | 2007-11-21 |
US20060211814A1 (en) | 2006-09-21 |
CN1764675A (zh) | 2006-04-26 |
KR20050119664A (ko) | 2005-12-21 |
WO2004087773A1 (ja) | 2004-10-14 |
DE112004000774T5 (de) | 2011-11-24 |
US7598320B2 (en) | 2009-10-06 |
TW200428166A (en) | 2004-12-16 |
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