CN1319138C - 封装的半导体器件的形成方法 - Google Patents

封装的半导体器件的形成方法 Download PDF

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Publication number
CN1319138C
CN1319138C CNB031023126A CN03102312A CN1319138C CN 1319138 C CN1319138 C CN 1319138C CN B031023126 A CNB031023126 A CN B031023126A CN 03102312 A CN03102312 A CN 03102312A CN 1319138 C CN1319138 C CN 1319138C
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CN
China
Prior art keywords
heat sink
die
circuit
circuit chip
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CNB031023126A
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English (en)
Chinese (zh)
Other versions
CN1437233A (zh
Inventor
马克·A·格博
肖恩·M·奥考内
特伦特·A·汤普森
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP USA Inc
Original Assignee
Freescale Semiconductor Inc
Motorola Inc
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Filing date
Publication date
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Publication of CN1437233A publication Critical patent/CN1437233A/zh
Application granted granted Critical
Publication of CN1319138C publication Critical patent/CN1319138C/zh
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/70—Fillings or auxiliary members in containers or in encapsulations for thermal protection or control
    • H10W40/77—Auxiliary members characterised by their shape
    • H10W40/778—Auxiliary members characterised by their shape in encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68—Shapes or dispositions thereof
    • H10W70/682—Shapes or dispositions thereof comprising holes having chips therein
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/20—Configurations of stacked chips
    • H10W90/28—Configurations of stacked chips the stacked chips having different sizes, e.g. chip stacks having a pyramidal shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/20—Configurations of stacked chips
    • H10W90/288—Configurations of stacked chips characterised by arrangements for thermal management of the stacked chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/732—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between stacked chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/752—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between stacked chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

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  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
CNB031023126A 2002-02-07 2003-01-30 封装的半导体器件的形成方法 Expired - Lifetime CN1319138C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/072,167 2002-02-07
US10/072,167 US6858932B2 (en) 2002-02-07 2002-02-07 Packaged semiconductor device and method of formation

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN2006101075528A Division CN101150098B (zh) 2002-02-07 2003-01-30 半导体器件

Publications (2)

Publication Number Publication Date
CN1437233A CN1437233A (zh) 2003-08-20
CN1319138C true CN1319138C (zh) 2007-05-30

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Family Applications (2)

Application Number Title Priority Date Filing Date
CNB031023126A Expired - Lifetime CN1319138C (zh) 2002-02-07 2003-01-30 封装的半导体器件的形成方法
CN2006101075528A Expired - Lifetime CN101150098B (zh) 2002-02-07 2003-01-30 半导体器件

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CN2006101075528A Expired - Lifetime CN101150098B (zh) 2002-02-07 2003-01-30 半导体器件

Country Status (5)

Country Link
US (1) US6858932B2 (enExample)
EP (1) EP1335426A3 (enExample)
JP (1) JP4653383B2 (enExample)
KR (1) KR100995478B1 (enExample)
CN (2) CN1319138C (enExample)

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US6853070B2 (en) * 2001-02-15 2005-02-08 Broadcom Corporation Die-down ball grid array package with die-attached heat spreader and method for making the same
US6794748B1 (en) * 2003-04-22 2004-09-21 Intel Corporation Substrate-less microelectronic package
US7190068B2 (en) * 2004-06-25 2007-03-13 Intel Corporation Bottom heat spreader
US7071556B2 (en) * 2004-09-10 2006-07-04 Jinghui Mu Tape ball grid array package with electromagnetic interference protection and method for fabricating the package
US7786591B2 (en) 2004-09-29 2010-08-31 Broadcom Corporation Die down ball grid array package
KR100700936B1 (ko) * 2006-01-25 2007-03-28 삼성전자주식회사 냉각 장치 및 이를 갖는 메모리 모듈
US9713258B2 (en) * 2006-04-27 2017-07-18 International Business Machines Corporation Integrated circuit chip packaging
US20090039524A1 (en) * 2007-08-08 2009-02-12 Texas Instruments Incorporated Methods and apparatus to support an overhanging region of a stacked die
US8472190B2 (en) * 2010-09-24 2013-06-25 Ati Technologies Ulc Stacked semiconductor chip device with thermal management
TWI446495B (zh) * 2011-01-19 2014-07-21 旭德科技股份有限公司 封裝載板及其製作方法
US9070657B2 (en) 2013-10-08 2015-06-30 Freescale Semiconductor, Inc. Heat conductive substrate for integrated circuit package
KR20170001238A (ko) * 2015-06-26 2017-01-04 에스케이하이닉스 주식회사 계단형 기판을 포함하는 반도체 패키지
US10741534B2 (en) * 2018-09-28 2020-08-11 Intel Corporation Multi-die microelectronic device with integral heat spreader
US12642051B2 (en) * 2022-08-15 2026-05-26 UTAC Headquarters Pte. Ltd. Semiconductor device carriers and methods of making and using

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1187037A (zh) * 1996-12-30 1998-07-08 Lg半导体株式会社 半导体封装及其制造方法
CN1202983A (zh) * 1995-11-28 1998-12-23 株式会社日立制作所 半导体器件及其制造方法以及装配基板
TW429494B (en) * 1999-11-08 2001-04-11 Siliconware Precision Industries Co Ltd Quad flat non-leaded package

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JPS61232651A (ja) * 1985-04-09 1986-10-16 Seiko Epson Corp 半導体実装方法
JP2660732B2 (ja) * 1989-01-09 1997-10-08 株式会社日立製作所 半導体装置
JPH0458539A (ja) * 1990-06-27 1992-02-25 Mitsubishi Electric Corp 混成集積回路装置
US5216278A (en) * 1990-12-04 1993-06-01 Motorola, Inc. Semiconductor device having a pad array carrier package
US5468994A (en) 1992-12-10 1995-11-21 Hewlett-Packard Company High pin count package for semiconductor device
JP2591499B2 (ja) * 1994-10-21 1997-03-19 日本電気株式会社 半導体装置
JP2636777B2 (ja) 1995-02-14 1997-07-30 日本電気株式会社 マイクロプロセッサ用半導体モジュール
TW373308B (en) * 1995-02-24 1999-11-01 Agere Systems Inc Thin packaging of multi-chip modules with enhanced thermal/power management
JPH0917919A (ja) 1995-06-29 1997-01-17 Fujitsu Ltd 半導体装置
US5844168A (en) 1995-08-01 1998-12-01 Minnesota Mining And Manufacturing Company Multi-layer interconnect sutructure for ball grid arrays
JPH0992748A (ja) * 1995-09-21 1997-04-04 Mitsubishi Materials Corp 半導体素子用パッケージ
US5843808A (en) 1996-01-11 1998-12-01 Asat, Limited Structure and method for automated assembly of a tab grid array package
US5696031A (en) 1996-11-20 1997-12-09 Micron Technology, Inc. Device and method for stacking wire-bonded integrated circuit dice on flip-chip bonded integrated circuit dice
US6008536A (en) * 1997-06-23 1999-12-28 Lsi Logic Corporation Grid array device package including advanced heat transfer mechanisms
US5919329A (en) 1997-10-14 1999-07-06 Gore Enterprise Holdings, Inc. Method for assembling an integrated circuit chip package having at least one semiconductor device
JPH11219984A (ja) 1997-11-06 1999-08-10 Sharp Corp 半導体装置パッケージおよびその製造方法ならびにそのための回路基板
JP3610769B2 (ja) * 1998-03-25 2005-01-19 イビデン株式会社 多層電子部品搭載用基板
JP2000077563A (ja) * 1998-08-31 2000-03-14 Sharp Corp 半導体装置およびその製造方法
JP2000174180A (ja) * 1998-12-02 2000-06-23 Shibafu Engineering Kk 半導体装置
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JP3344362B2 (ja) * 1999-05-07 2002-11-11 日本電気株式会社 フィルムキャリア型半導体装置
JP2000332160A (ja) * 1999-05-24 2000-11-30 Sumitomo Metal Electronics Devices Inc キャビティダウン型半導体パッケージ
JP3589109B2 (ja) * 1999-08-27 2004-11-17 日立電線株式会社 スティフナ付きtabテープおよびbgaパッケージ
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CN1202983A (zh) * 1995-11-28 1998-12-23 株式会社日立制作所 半导体器件及其制造方法以及装配基板
CN1187037A (zh) * 1996-12-30 1998-07-08 Lg半导体株式会社 半导体封装及其制造方法
TW429494B (en) * 1999-11-08 2001-04-11 Siliconware Precision Industries Co Ltd Quad flat non-leaded package

Also Published As

Publication number Publication date
KR100995478B1 (ko) 2010-11-22
CN1437233A (zh) 2003-08-20
JP2003243565A (ja) 2003-08-29
US6858932B2 (en) 2005-02-22
US20030148554A1 (en) 2003-08-07
CN101150098A (zh) 2008-03-26
EP1335426A2 (en) 2003-08-13
CN101150098B (zh) 2011-11-23
EP1335426A3 (en) 2008-07-30
JP4653383B2 (ja) 2011-03-16
KR20030067542A (ko) 2003-08-14

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