CN1302537C - 半导体结构及其制造方法 - Google Patents
半导体结构及其制造方法 Download PDFInfo
- Publication number
- CN1302537C CN1302537C CNB2005100056243A CN200510005624A CN1302537C CN 1302537 C CN1302537 C CN 1302537C CN B2005100056243 A CNB2005100056243 A CN B2005100056243A CN 200510005624 A CN200510005624 A CN 200510005624A CN 1302537 C CN1302537 C CN 1302537C
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- CN
- China
- Prior art keywords
- nitrogen
- concentration
- semiconductor structure
- dielectric layer
- dielectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823857—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate insulating layers, e.g. different gate insulating layer thicknesses, particular gate insulator materials or particular gate insulator implants
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (29)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/707,897 US7138691B2 (en) | 2004-01-22 | 2004-01-22 | Selective nitridation of gate oxides |
US10/707,897 | 2004-01-22 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1645593A CN1645593A (zh) | 2005-07-27 |
CN1302537C true CN1302537C (zh) | 2007-02-28 |
Family
ID=34794561
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2005100056243A Expired - Fee Related CN1302537C (zh) | 2004-01-22 | 2005-01-21 | 半导体结构及其制造方法 |
Country Status (4)
Country | Link |
---|---|
US (3) | US7138691B2 (zh) |
JP (1) | JP4317523B2 (zh) |
CN (1) | CN1302537C (zh) |
TW (1) | TWI343094B (zh) |
Families Citing this family (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7138691B2 (en) * | 2004-01-22 | 2006-11-21 | International Business Machines Corporation | Selective nitridation of gate oxides |
KR100521452B1 (ko) * | 2004-07-28 | 2005-10-12 | 동부아남반도체 주식회사 | 반도체 장치의 질화산화막 형성방법 |
KR100611784B1 (ko) * | 2004-12-29 | 2006-08-10 | 주식회사 하이닉스반도체 | 다중 게이트절연막을 갖는 반도체장치 및 그의 제조 방법 |
US7265065B2 (en) * | 2005-04-29 | 2007-09-04 | United Microelectronics Corp. | Method for fabricating dielectric layer doped with nitrogen |
KR100677986B1 (ko) * | 2005-12-28 | 2007-02-02 | 동부일렉트로닉스 주식회사 | 질소부화 산화막을 게이트 절연막으로 갖는 반도체소자의제조 방법 |
US7737010B2 (en) * | 2006-04-14 | 2010-06-15 | Micron Technology, Inc. | Method of photoresist strip for plasma doping process of semiconductor manufacturing |
US7544561B2 (en) * | 2006-11-06 | 2009-06-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Electron mobility enhancement for MOS devices with nitrided polysilicon re-oxidation |
US8110490B2 (en) * | 2007-08-15 | 2012-02-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Gate oxide leakage reduction |
KR100957873B1 (ko) | 2007-12-28 | 2010-05-13 | 매그나칩 반도체 유한회사 | 반도체 소자의 게이트 산화막 형성 방법 |
US20090176356A1 (en) * | 2008-01-09 | 2009-07-09 | Advanced Micro Devices, Inc. | Methods for fabricating semiconductor devices using thermal gradient-inducing films |
US20090302401A1 (en) * | 2008-06-05 | 2009-12-10 | Chartered Semiconductor Manufacturing, Ltd. | Pfet enhancement during smt |
CN101447514B (zh) * | 2008-12-30 | 2012-06-20 | 上海宏力半导体制造有限公司 | 金属氧化物半导体场效应晶体管 |
US8173531B2 (en) | 2009-08-04 | 2012-05-08 | International Business Machines Corporation | Structure and method to improve threshold voltage of MOSFETS including a high K dielectric |
JP2011077321A (ja) * | 2009-09-30 | 2011-04-14 | Tokyo Electron Ltd | 選択的プラズマ窒化処理方法及びプラズマ窒化処理装置 |
US8748259B2 (en) | 2010-03-02 | 2014-06-10 | Applied Materials, Inc. | Method and apparatus for single step selective nitridation |
US8394688B2 (en) | 2011-06-27 | 2013-03-12 | United Microelectronics Corp. | Process for forming repair layer and MOS transistor having repair layer |
CN102427043B (zh) * | 2011-08-04 | 2015-06-17 | 上海华力微电子有限公司 | 一种改善pmos器件载流子迁移率的方法 |
CN102427042B (zh) * | 2011-08-04 | 2015-05-20 | 上海华力微电子有限公司 | 一种改善nmos器件载流子迁移率的方法 |
US8741784B2 (en) | 2011-09-20 | 2014-06-03 | United Microelectronics Corp. | Process for fabricating semiconductor device and method of fabricating metal oxide semiconductor device |
CN102364664A (zh) * | 2011-11-10 | 2012-02-29 | 上海华力微电子有限公司 | 改善mos器件载流子迁移率的方法以及mos器件制造方法 |
CN102394220A (zh) * | 2011-11-17 | 2012-03-28 | 上海华力微电子有限公司 | 改善mos器件载流子迁移率的方法以及mos器件制造方法 |
JP6094851B2 (ja) * | 2012-08-28 | 2017-03-15 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
KR101912579B1 (ko) | 2012-09-07 | 2018-10-30 | 삼성전자 주식회사 | 반도체 장치의 제조 방법 |
US9634083B2 (en) | 2012-12-10 | 2017-04-25 | United Microelectronics Corp. | Semiconductor structure and process thereof |
US9059315B2 (en) | 2013-01-02 | 2015-06-16 | International Business Machines Corporation | Concurrently forming nFET and pFET gate dielectric layers |
CN104425227A (zh) * | 2013-08-20 | 2015-03-18 | 中芯国际集成电路制造(上海)有限公司 | 具有不同厚度的栅极氧化层的制造方法 |
US20150206789A1 (en) * | 2014-01-17 | 2015-07-23 | Nanya Technology Corporation | Method of modifying polysilicon layer through nitrogen incorporation for isolation structure |
US9224826B2 (en) | 2014-02-12 | 2015-12-29 | International Business Machines Corporation | Multiple thickness gate dielectrics for replacement gate field effect transistors |
US9177868B2 (en) | 2014-03-28 | 2015-11-03 | International Business Machines Corporation | Annealing oxide gate dielectric layers for replacement metal gate field effect transistors |
US9466480B2 (en) | 2014-11-04 | 2016-10-11 | United Microelectronics Corp. | Cleaning process for oxide |
US10593600B2 (en) | 2016-02-24 | 2020-03-17 | International Business Machines Corporation | Distinct gate stacks for III-V-based CMOS circuits comprising a channel cap |
US10062693B2 (en) * | 2016-02-24 | 2018-08-28 | International Business Machines Corporation | Patterned gate dielectrics for III-V-based CMOS circuits |
US9768118B1 (en) | 2016-09-19 | 2017-09-19 | International Business Machines Corporation | Contact having self-aligned air gap spacers |
US9953831B1 (en) | 2016-12-21 | 2018-04-24 | Globalfoundries Inc. | Device structures with multiple nitrided layers |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5998253A (en) * | 1997-09-29 | 1999-12-07 | Siemens Aktiengesellschaft | Method of forming a dopant outdiffusion control structure including selectively grown silicon nitride in a trench capacitor of a DRAM cell |
JP2002353218A (ja) * | 2001-03-15 | 2002-12-06 | Internatl Business Mach Corp <Ibm> | 改善された超薄型ゲート誘電体のプラズマ窒化物形成方法 |
US6541395B1 (en) * | 1999-08-30 | 2003-04-01 | Micron Technology, Inc. | Semiconductor processing method of forming field effect transistors |
CN1417853A (zh) * | 2001-11-01 | 2003-05-14 | 海力士半导体有限公司 | 互补型金属氧化物半导体器件及其制造方法 |
US6821833B1 (en) * | 2003-09-09 | 2004-11-23 | International Business Machines Corporation | Method for separately optimizing thin gate dielectric of PMOS and NMOS transistors within the same semiconductor chip and device manufactured thereby |
Family Cites Families (26)
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US183844A (en) * | 1876-10-31 | Improvement in stop mechanisms for drawing-frames | ||
US4774197A (en) * | 1986-06-17 | 1988-09-27 | Advanced Micro Devices, Inc. | Method of improving silicon dioxide |
JPH01183844A (ja) | 1988-01-19 | 1989-07-21 | Toshiba Corp | 半導体装置 |
JPH104145A (ja) | 1996-06-18 | 1998-01-06 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
US5939763A (en) * | 1996-09-05 | 1999-08-17 | Advanced Micro Devices, Inc. | Ultrathin oxynitride structure and process for VLSI applications |
US6048769A (en) * | 1997-02-28 | 2000-04-11 | Intel Corporation | CMOS integrated circuit having PMOS and NMOS devices with different gate dielectric layers |
US6051510A (en) * | 1997-05-02 | 2000-04-18 | Advanced Micro Devices, Inc. | Method of using a hard mask to grow dielectrics with varying characteristics |
DE69834938T2 (de) * | 1997-10-23 | 2007-02-01 | Nippon Institute For Biological Science, Oume | Granulozyten-kolonie-stimulierender faktor aus der katze |
US5952706A (en) * | 1997-10-29 | 1999-09-14 | National Semiconductor Corporation | Semiconductor integrated circuit having a lateral bipolar transistor compatible with deep sub-micron CMOS processing |
US6767794B2 (en) * | 1998-01-05 | 2004-07-27 | Advanced Micro Devices, Inc. | Method of making ultra thin oxide formation using selective etchback technique integrated with thin nitride layer for high performance MOSFET |
US6184110B1 (en) * | 1998-04-30 | 2001-02-06 | Sharp Laboratories Of America, Inc. | Method of forming nitrogen implanted ultrathin gate oxide for dual gate CMOS devices |
JP2000243960A (ja) * | 1998-12-24 | 2000-09-08 | Sharp Corp | 絶縁ゲート型トランジスタとその製造方法 |
US6440829B1 (en) * | 1998-12-30 | 2002-08-27 | Agere Systems Guardian Corp. | N-profile engineering at the poly/gate oxide and gate oxide/SI interfaces through NH3 annealing of a layered poly/amorphous-silicon structure |
US6251800B1 (en) * | 1999-01-06 | 2001-06-26 | Advanced Micro Devices, Inc. | Ultrathin deposited gate dielectric formation using low-power, low-pressure PECVD for improved semiconductor device performance |
JP3472727B2 (ja) | 1999-08-13 | 2003-12-02 | Necエレクトロニクス株式会社 | 半導体装置及び半導体装置の製造方法 |
US6323106B1 (en) * | 1999-09-02 | 2001-11-27 | Lsi Logic Corporation | Dual nitrogen implantation techniques for oxynitride formation in semiconductor devices |
US6444555B2 (en) * | 1999-12-07 | 2002-09-03 | Advanced Micro Devices, Inc. | Method for establishing ultra-thin gate insulator using anneal in ammonia |
JP2001332722A (ja) | 2000-05-22 | 2001-11-30 | Nec Corp | 半導体装置およびその製造方法 |
JP2001351989A (ja) * | 2000-06-05 | 2001-12-21 | Nec Corp | 半導体装置の製造方法 |
US6686298B1 (en) * | 2000-06-22 | 2004-02-03 | Micron Technology, Inc. | Methods of forming structures over semiconductor substrates, and methods of forming transistors associated with semiconductor substrates |
KR100367740B1 (ko) * | 2000-08-16 | 2003-01-10 | 주식회사 하이닉스반도체 | 반도체 소자의 게이트 산화막 제조방법 |
US6610615B1 (en) * | 2000-11-15 | 2003-08-26 | Intel Corporation | Plasma nitridation for reduced leakage gate dielectric layers |
JP2003197767A (ja) | 2001-12-21 | 2003-07-11 | Toshiba Corp | 半導体装置及びその製造方法 |
US6986571B2 (en) * | 2002-04-23 | 2006-01-17 | Hewlett-Packard Development Company, L.P. | Filter for a print cartridge |
JP2003347423A (ja) | 2002-05-28 | 2003-12-05 | Renesas Technology Corp | 半導体集積回路装置およびその製造方法 |
US7138691B2 (en) * | 2004-01-22 | 2006-11-21 | International Business Machines Corporation | Selective nitridation of gate oxides |
-
2004
- 2004-01-22 US US10/707,897 patent/US7138691B2/en not_active Expired - Lifetime
-
2005
- 2005-01-17 TW TW094101283A patent/TWI343094B/zh not_active IP Right Cessation
- 2005-01-19 JP JP2005011499A patent/JP4317523B2/ja not_active Expired - Fee Related
- 2005-01-21 CN CNB2005100056243A patent/CN1302537C/zh not_active Expired - Fee Related
-
2006
- 2006-08-16 US US11/465,030 patent/US7759260B2/en not_active Expired - Fee Related
-
2010
- 2010-04-01 US US12/752,628 patent/US20100187614A1/en not_active Abandoned
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5998253A (en) * | 1997-09-29 | 1999-12-07 | Siemens Aktiengesellschaft | Method of forming a dopant outdiffusion control structure including selectively grown silicon nitride in a trench capacitor of a DRAM cell |
US6541395B1 (en) * | 1999-08-30 | 2003-04-01 | Micron Technology, Inc. | Semiconductor processing method of forming field effect transistors |
JP2002353218A (ja) * | 2001-03-15 | 2002-12-06 | Internatl Business Mach Corp <Ibm> | 改善された超薄型ゲート誘電体のプラズマ窒化物形成方法 |
CN1417853A (zh) * | 2001-11-01 | 2003-05-14 | 海力士半导体有限公司 | 互补型金属氧化物半导体器件及其制造方法 |
US6821833B1 (en) * | 2003-09-09 | 2004-11-23 | International Business Machines Corporation | Method for separately optimizing thin gate dielectric of PMOS and NMOS transistors within the same semiconductor chip and device manufactured thereby |
Also Published As
Publication number | Publication date |
---|---|
US20060281265A1 (en) | 2006-12-14 |
TW200536055A (en) | 2005-11-01 |
US7138691B2 (en) | 2006-11-21 |
CN1645593A (zh) | 2005-07-27 |
US20050164444A1 (en) | 2005-07-28 |
TWI343094B (en) | 2011-06-01 |
US20100187614A1 (en) | 2010-07-29 |
US7759260B2 (en) | 2010-07-20 |
JP4317523B2 (ja) | 2009-08-19 |
JP2005210123A (ja) | 2005-08-04 |
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GR01 | Patent grant | ||
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TR01 | Transfer of patent right |
Effective date of registration: 20171120 Address after: Grand Cayman, Cayman Islands Patentee after: GLOBALFOUNDRIES INC. Address before: American New York Patentee before: Core USA second LLC Effective date of registration: 20171120 Address after: American New York Patentee after: Core USA second LLC Address before: American New York Patentee before: International Business Machines Corp. |
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