CN1296640A - 各向异性导电膜、半导体芯片的安装方法和半导体装置 - Google Patents

各向异性导电膜、半导体芯片的安装方法和半导体装置 Download PDF

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CN1296640A
CN1296640A CN99804793A CN99804793A CN1296640A CN 1296640 A CN1296640 A CN 1296640A CN 99804793 A CN99804793 A CN 99804793A CN 99804793 A CN99804793 A CN 99804793A CN 1296640 A CN1296640 A CN 1296640A
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semiconductor chip
conductive film
anisotropic conductive
parts
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CN1155997C (zh
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泽本俊宏
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Seiko Epson Corp
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Seiko Epson Corp
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    • H05K3/321Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
    • H05K3/323Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives by applying an anisotropic conductive adhesive layer over an array of pads
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Abstract

将各向异性导电膜3作成两边缘部为硬的部分31、硬的部分以外的部分为软的部分32的结构。利用该结构,在将半导体芯片1热压接到基板2上时,硬的部分31阻止软的部分32朝向半导体芯片的周边流动。因此,可防止各向异性导电膜3附着到加热加压工具上。

Description

各向异性导电膜、半导体芯片的安装方法和半导体装置
技术领域
本发明涉及各向异性导电膜、半导体芯片的安装方法和半导体装置,特别是涉及适合于使半导体芯片的有源元件形成面朝向基板一侧进行安装的各向异性导电膜、半导体芯片的安装方法和半导体装置。
背景技术
在使半导体芯片的形成了有源元件的面朝下进行安装的半导体芯片的安装方法、即所谓倒装芯片安装中,常常使用各向异性导电膜。该各向异性导电膜在发挥粘接能力的同时,起到作为半导体芯片与基板的导通媒体的作用,是膜状的薄片,将其整体形成为细长的带状。此外,其材料构成,一般由用固形环氧系列树脂和液状环氧系列树脂构成的粘合剂和对树脂粒子进行了金属电镀的导电性粒子组成。这样来掺合导电性粒子,使得其体积比在整个粘合剂中为均匀的。再有,也有使用金属粒子作为导电性粒子的情况。此外,导电性粒子的直径约为2~10μm,主要以直径约5μm的导电性粒子为主流。
这里,在图5中示出使用了现有的各向异性导电膜的芯片的安装方法的例子。首先,在设置了布线21的基板2上粘贴各向异性导电膜3,再在电极焊区11与布线21相对的状态下将半导体芯片1放置在各向异性导电膜3上。其次,利用加热加压工具71从设置了电极焊区11的面的相反一侧的面起对半导体芯片1一边进行加热一边进行加压。
通过加热,提高了各向异性导电膜3的流动性,将其充填电极焊区11和布线21的周围的空间,进而,从半导体芯片1与基板2的粘接面向外部流出,粘附到半导体芯片1的侧面上。另一方面,导电性粒子61的一部分在被夹住的状态下介于电极焊区11与布线21之间。
在该热压接之后,各向异性导电膜3的硬化一结束,就由各向异性导电膜3将半导体芯片1与基板2粘接在一起。特别是,附着于半导体芯片1的侧面的各向异性导电膜3形成镶边(fillet)34,使半导体芯片1与基板2的机械性连接变得牢固。此外,夹在电极焊区11与布线21之间的导电性粒子61起到作为半导体芯片1与基板2的导通媒体的作用。
但是,在上述的现有技术中发生以下那样的问题。
即,在半导体芯片1较薄的情况下,在利用加热加压工具71对半导体芯片1进行加热、加压时,各向异性导电膜3不仅附着于半导体芯片1的侧面、而且如图5的已附着部分35中所示,附着到加热加压工具71上。如果频繁地发生各向异性导电膜3的一部分附着到加热加压工具71上的情况,则当然必须相应地频繁地进行加热加压工具71的清洗,半导体芯片的热压接工序的管理负担加重。此外,变成这样的状态的半导体芯片安装后的外观也不理想。
但是,如果为了回避上述的问题而使设置在基板2上的各向异性导电膜3的面积比半导体芯片1的形成了电极焊区11的面的面积小、或使加热加压工具71的加热温度比以往降低,则存在半导体芯片与基板的机械连接的强度不充分的可能性。
发明的公开
本发明的目的在于,为了消除上述的现有技术的缺点,提供下述一种各向异性导电膜,其中,在能充分地得到基板与半导体芯片的机械连接强度的同时,可防止各向异性导电膜附着到加热加压工具上,由此,半导体芯片与基板的连接工序的管理变得容易。此外,其目的在于,提供一种设置了该各向异性导电膜的电路基板。再者,其目的在于,提供一种具备该电路基板的电子装置。
此外,本发明的目的在于,提供一种利用各向异性导电膜安装了半导体芯片的半导体装置,其中该各向异性导电膜可充分地提供基板与半导体芯片的机械连接的强度,可防止各向异性导电膜附着到加热加压工具上。
此外,本发明的目的在于,提供一种使用了该各向异性导电膜的半导体芯片的安装方法。此外,其目的在于,提供一种使用了该半导体芯片的安装方法制造的半导体装置。再者,其目的在于,提供一种具备该半导体装置的电子装置。
为了达到上述的目的,与本发明的第1方面有关的各向异性导电膜是这样一种各向异性导电膜,该各向异性导电膜粘接半导体芯片与基板,同时成为上述半导体芯片与上述基板的电导通媒体,具有第1部件和与上述第1部件邻接地被配置而构成的第2部件,上述第1部件由具有其流动性比上述第2部件的流动性低的特性的材料来形成。
按照如上述方式构成的与本发明的第1方面有关的各向异性导电膜,在利用加热加压工具将半导体芯片热压接到粘贴在基板上的各向异性导电膜上来连接半导体芯片与基板时,第1部件抑制第2部件朝向半导体芯片的侧面流动的情况。因此,可防止第2部件过分地附着于半导体芯片的侧面并附着到加热加压工具上的情况。其结果,半导体芯片与基板的连接工序的管理变得容易。
此外,与本发明的第2方面有关的各向异性导电膜是这样一种各向异性导电膜,该各向异性导电膜粘接半导体芯片与基板,同时成为上述半导体芯片与上述基板的电导通媒体,具有第1部件和与上述第1部件邻接地被配置而构成的第2部件,上述第1部件由在上述半导体芯片与上述基板的接合时显现出比上述第2部件的流动性低的特性的材料构成。
按照如上述方式构成的与本发明的第2方面有关的各向异性导电膜,在利用加热加压工具将半导体芯片热压接到粘贴在基板上的各向异性导电膜上来连接半导体芯片与基板的时刻,由于第1部件的流动性比第2部件的流动性低,故可利用第1部件来抑制第2部件朝向半导体芯片的侧面流动的情况。因此,可防止配置在第2部件上的材料过分地附着于半导体芯片的侧面并附着到加热加压工具上的情况。其结果,半导体芯片与基板的连接工序的管理变得容易。
此外,与本发明的第3方面有关的各向异性导电膜成为将上述第2部件的形状形成为与上述半导体芯片的形成了电极的面的形状大体相同的结构。
按照如上述方式构成的与本发明的第3方面有关的各向异性导电膜,在连接半导体芯片与基板时,可使朝向半导体芯片的各侧面流动的第2部件的量在各侧面上都大体均等,不会在特定的侧面上形成过大的镶边。
此外,与本发明的第4方面有关的各向异性导电膜成为将上述第2部件的面积形成为与上述半导体芯片的形成了上述电极的面的面积大体相同的结构。
按照如上述方式构成的与本发明的第4方面有关的各向异性导电膜,在连接半导体芯片与基板时,可使朝向半导体芯片的各侧面流动的第2部件的量抑制为在该侧面上形成适度的大小的镶边的程度。
再者,将与本发明的第6方面有关的电路基板作成设置上述的任一方面中所述的各向异性导电膜而构成的结构。
按照如上述方式构成的与本发明的第6方面有关的电路基板,在热压接半导体芯片时,可防止各向异性导电膜过度地流出到半导体芯片的周围并附着于电路基板上的其它区域上的情况。此外,能可靠地连接半导体芯片,可提供可靠度高的电路基板。
另外,将与本发明的第7方面有关的电子装置作成具备上述的电路基板而构成的结构。
按照如上述方式构成的与本发明的第7方面有关的电子装置,由于使用半导体芯片安装的可靠度高的电路基板,故提高了电子装置本身的可靠度。
而且,与本发明的第8方面有关的半导体装置具备由各向异性导电膜安装了半导体芯片的基板,上述各向异性导电膜具有与边缘部相当的第1部件和与上述第1部件相比位于中央侧的第2部件,上述第1部件由具有其流动性比上述第2部件的流动性低的特性的材料来形成。
按照如上述方式构成的与本发明的第8方面有关的半导体装置,在将半导体芯片热压接到基板上时,第1部件抑制第2部件朝向半导体芯片的侧面流动的情况。因此,第2部件不会过分地附着于半导体芯片的侧面,可提供外观良好的半导体装置。
此外,与本发明的第9方面有关的半导体装置成为将上述第2部件的形状形成为与上述半导体芯片的形成了电极的面的形状大体相同的结构。
按照如上述方式构成的与本发明的第9方面有关的半导体装置,可使朝向半导体芯片的各侧面流动的第2部件的量在各侧面上都大体均等,不会在特定的侧面上形成过大的镶边。
此外,与本发明的第10方面有关的半导体装置成为将上述第2部件的面积形成为与上述半导体芯片的形成了电极的面的面积大体相同的结构。
按照如上述方式构成的与本发明的第10方面有关的半导体装置,在连接半导体芯片与基板时,可使朝向半导体芯片的各侧面流动的第2部件的量抑制为在该侧面上形成适度的大小的镶边的程度。
而且,与本发明的第11方面有关的半导体芯片的安装方法是使形成了电极的半导体芯片的一个面在与基板的形成了电极的面相对的方向上进行安装的半导体芯片的安装方法,具有:将具有第1部件和与上述第1部件邻接地被配置而构成的第2部件的各向异性导电膜粘贴到上述基板的形成了上述电极的面上的工序;将上述半导体芯片放置在上述各向异性导电膜上的工序;以及利用加热加压体一边对上述半导体芯片加热一边对其按压、将其连接到上述基板上的工序。
按照如上述方式构成的与本发明的第11方面有关的半导体芯片的安装方法,在利用加热加压工具将半导体芯片热压接到粘贴在基板上的各向异性导电膜上来连接半导体芯片与基板时,第1部件抑制比其流动性高的第2部件朝向半导体芯片的侧面流动的情况。因此,可防止第2部件过分地附着于半导体芯片的侧面并附着到加热加压工具上的情况。其结果,半导体芯片与基板的连接工序的管理变得容易。
此外,在与本发明的第12方面有关的半导体芯片的安装方法中,上述第1部件具有其流动性比上述第2部件的流动性低的特性。
按照如上述方式构成的与本发明的第12方面有关的半导体芯片的安装方法,能可靠地利用第1部件抑制第2部件的朝向半导体芯片的侧面流动,可防止第2部件附着到加热加压工具上的情况。
此外,在与本发明的第13方面有关的半导体芯片的安装方法中,将上述第2部件的形状形成为与上述一个面的形状大体相同。
按照如上述方式构成的与本发明的第13方面有关的半导体芯片的安装方法,可使朝向半导体芯片的各侧面流动的第2部件的量在各侧面上都大体均等,不会在特定的侧面上形成过大的镶边。
此外,与本发明的第14方面有关的半导体芯片的安装方法中,将上述第2部件的面积形成为与上述一个面的面积大体相同。
按照如上述方式构成的与本发明的第14方面有关的半导体芯片的安装方法,在连接半导体芯片与基板时,可使朝向半导体芯片的各侧面流动的第2部件的量抑制为在该侧面上形成适度的大小的镶边的程度。
此外,与本发明的第15方面有关的半导体芯片的安装方法是使形成了电极的半导体芯片的一个面在与基板的形成了电极的面相对的方向上进行安装的半导体芯片的安装方法,具有:对由热可塑性树脂构成的各向异性导电膜的与边缘部相比位于中央侧的区域进行加热以提高上述各向异性导电膜的流动性的工序;将上述各向异性导电膜粘贴到上述基板的形成了上述电极的面上的工序;将上述半导体芯片放置在上述各向异性导电膜上的工序;以及利用加热加压体一边对上述半导体芯片加热一边对其按压、将上述半导体芯片连接到上述基板上的工序。
按照如上述方式构成的与本发明的第15方面有关的半导体芯片的安装方法,由于提高了被加热的区域的流动性,故在连接半导体芯片与基板的工序中,被加热了的区域朝向半导体芯片的侧面流动,同时,不加热的区域抑制其过分的流动。因此,可防止各向异性导电膜过分地附着于半导体芯片的侧面并附着到加热加压工具上的情况。其结果,半导体芯片与基板的连接工序的管理变得容易。
此外,在与本发明的第16方面有关的半导体芯片的安装方法中,将上述各向异性导电膜形成为使上述区域的形状与上述一个面的形状大体相同。
按照如上述方式构成的与本发明的第16方面有关的半导体芯片的安装方法,可使朝向半导体芯片的各侧面流动的第2部件的量在各侧面上都大体均等,不会在特定的侧面上形成过大的镶边。
此外,与本发明的第17方面有关的半导体芯片的安装方法是使形成了电极的半导体芯片的一个面在与基板的形成了电极的面相对的方向上进行安装的半导体芯片的安装方法,具有:将形成为框状的各向异性导电膜粘贴到上述基板的形成了上述电极的面上的工序;在上述各向异性导电膜的内侧的区域上设置其流动性比上述各向异性导电膜的流动性高的各向异性导电粘接剂的工序;将上述半导体芯片放置在上述各向异性导电粘接剂上的工序;以及利用加热加压体一边对上述半导体芯片加热一边对其按压、将上述半导体芯片连接到上述基板上的工序。
按照如上述方式构成的与本发明的第17方面有关的半导体芯片的安装方法,在利用加热加压工具将半导体芯片热压接到粘贴在基板上的各向异性导电膜上来连接半导体芯片与基板时,形成为框状的各向异性导电膜抑制内侧的区域的各向异性导电粘接剂朝向半导体芯片的侧面流动的情况。因此,可防止各向异性导电粘接剂过分地附着于半导体芯片的侧面并附着到加热加压工具上的情况。其结果,半导体芯片与基板的连接工序的管理变得容易。
此外,与本发明的第18方面有关的半导体芯片的安装方法中,将上述各向异性导电膜的内侧的区域的形状形成为与上述一个面的形状大体相同。
按照如上述方式构成的与本发明的第18方面有关的半导体芯片的安装方法,在连接半导体芯片与基板时,由于即使各向异性导电粘接剂朝向半导体芯片的侧面流动,也没有形成过大的镶边那样的流动量,故各向异性导电膜不会附着到加热加压工具上。
而且,与本发明的第19方面有关的半导体装置成为使用本发明的第11方面至本发明的第18方面的任一方面中所述的半导体芯片的安装方法被制造的结构。
按照如上述方式构成的与本发明的第19方面有关的半导体装置,可提高半导体芯片的连接的可靠性,同时,可使在半导体芯片的侧面形成的镶边的大小与已安装的半导体芯片的高度相对应。其结果,可提高半导体芯片与基板的连接的可靠性,而且可提供外观良好的半导体装置。
再者,与本发明的第20方面有关的电子装置成为具备本发明的第19方面中所述的半导体装置的结构。
按照如上述方式构成的与本发明的第20方面有关的电子装置,由于具备以适度的大小被形成镶边的、机械连接良好的半导体装置,故提高了电子装置的功能的可靠性。
再有,关于在上述各装置中所述的基板的材料,可以是塑料基板、柔性基板等的使用了有机系列材料的基板,或陶瓷基板等的使用了无机系列材料的基板的任一种基板。
附图的简单说明
图1是示出与本发明的第1实施形态有关的半导体芯片的安装状态的剖面图。
图2是示出与本发明的第1实施形态有关的半导体芯片的安装工序的剖面图,(1)是示出将各向异性导电膜粘贴到基板上的状态的剖面图,(2)是示出将半导体芯片放置在各向异性导电膜上的状态的剖面图,(3)是示出对半导体芯片进行热压接的状态的剖面图。
图3是示出与本发明的第2实施形态有关的半导体芯片的安装工序的剖面图,(1)是示出将各向异性导电膜粘贴到基板上的状态的斜视图,(2)是其C-C线的剖面图,(3)是示出在各向异性导电膜的内侧的区域上涂敷了膏状的各向异性导电粘接剂的状态的剖面图。
图4是与本发明的第1实施形态有关的各向异性导电膜的斜视图。
图5是示出现有的各向异性导电膜的半导体芯片的安装状态的剖面图。
图6是利用与本发明的任一实施形态有关的各向异性导电膜安装了半导体芯片的电路基板的说明图。
图7是与本发明的实施形态有关的笔记本型个人计算机的说明图。
图8是与本发明的实施形态有关的携带电话机的说明图。
用于实施发明的最佳形态
以下,参照附图详细地说明本发明的优选实施形态。
图1是示出与本发明的第1实施形态有关的半导体芯片的安装状态的剖面图。此外,图2是示出与本发明的第1实施形态有关的半导体芯片的安装工序的剖面图,(1)是示出将各向异性导电膜粘贴到基板上的状态的剖面图,(2)是示出将半导体芯片放置在各向异性导电膜上的状态的剖面图,(3)是示出对半导体芯片进行热压接的状态的剖面图。此外,图3是示出与本发明的第2实施形态有关的半导体芯片的安装工序的说明图,(1)是示出将各向异性导电膜粘贴到基板上的状态的斜视图,(2)是该状态的剖面图,(3)是示出在各向异性导电膜的内侧的区域上涂敷了膏状的各向异性导电粘接剂的状态的剖面图。此外,图4是与本发明的第1实施形态有关的各向异性导电膜的斜视图。再者,图5是示出与现有的各向异性导电膜有关的半导体芯片的安装状态的剖面图。此外,图6是利用与本发明的任一实施形态有关的各向异性导电膜安装了半导体芯片的电路基板的说明图。再者,图7是与本发明的实施形态有关的笔记本型个人计算机的说明图。另外,图8是与本发明的实施形态有关的携带电话机的说明图。
首先,说明本发明的第1实施形态中的各向异性导电膜的具体的结构。如图4中所示,各向异性导电膜3被形成为片状,将其整体形成为长的带状那样的形状。图4表示其一部分,将靠近纵向的两端部被配置的硬的部分31和在2个硬的部分31间被夹持的软的部分32设置成一体,形成了各向异性导电膜3。此外,在其表面背面这两个面上粘贴了覆盖膜36。
硬的部分31由分子量大的热硬化性树脂构成,具有即使在加热时流动性也低的特性。此外,软的部分32由分子量小的热硬化性树脂构成,具有在加热时比硬的部分31的流动性相对地高的特性。具体地说,硬的部分31由环氧系列的树脂形成。其树脂构成以固形环氧系列树脂为75%~99重量%和液状环氧系列树脂1重量%~25重量%的比率来配制。此外,软的部分32由环氧系列的树脂形成。该树脂构成以固形环氧系列树脂为50重量%~75重量%和液状环氧系列树脂25重量%~50重量%的比率来配制。
再有,使用各向异性导电膜3来安装半导体芯片等时的各向异性导电膜的加热温度通常为180℃~200℃的范围。此外,在使用时,切断成适当的必要的大小,剥离基板一侧的覆盖膜36,粘贴到安装半导体芯片的部位上。
此外,软的部分32的宽度最好与被安装的半导体芯片的1边的长度、特别是在是长方形的半导体芯片的情况下与短边的长度相等。这是因为,在将半导体芯片1热压接到基板2上时,软的部分32的流动性非常高,从半导体芯片1与基板2之间向外部空间流出,但如果将软的部分32的宽度设定为上述的宽度,则由于硬的部分31以盖的方式来隔断半导体芯片1与基板2之间的空间与外部空间,故可抑制软的部分32向外部空间流出。
此外,在半导体芯片上,在形成了电极焊区的面的周边的2边或4边上、或在该整个面上隔开一定间隔设置了约几十~几百个电极焊区。在本发明的实施形态中,即使半导体芯片的电极焊区被设置成任一种状态也能适用。此外,安装半导体芯片的基板可以是有机系列、无机系列的任一种,不管其材料性质如何。
其次,根据附图说明使用了与本发明的第1实施形态有关的各向异性导电膜3的半导体芯片的安装方法。
如图2(1)中所示,最初,一边将基板2一侧的剥去了覆盖膜36的各向异性导电膜3在几秒间、180℃~200℃下进行加热,一边将其粘贴到基板2的设置了布线21的部位上。其次,剥去设置了半导体芯片1的一侧的覆盖膜36。再有,软的部分32的长度定为与半导体芯片1的长边的长度大体相同。
其次,如图2(2)中所示,在电极焊区11与布线21相对的状态下,将半导体芯片1放置在各向异性导电膜3上。此时,这样来放置,使得半导体芯片1的长边与硬的部分31大体平行。
再者,如图2(3)中所示,利用加热加压工具71从没有设置电极焊区11的面对半导体芯片1进行加热加压。由于被加热各向异性导电膜3的流动性提高,另外,由于按压力而变形。再有,由于加热加压工具71的热很好地传导到金属制的电极焊区11上,故电极焊区11附近的各向异性导电膜3的流动性特别高。
如果以这种方式被加热,则软的部分32由于来自加热加压工具71的按压力(箭头B)而从半导体芯片1与基板2之间朝向半导体芯片1的侧面流动。但是,由于在半导体芯片1的长边的下方设置了硬的部分31,故软的部分32的流动被硬的部分31所抑制。因此,可防止从半导体芯片1与基板2之间溢出的软的部分32附着到加热加压工具71上。
另一方面,由于在半导体芯片1的边缘的4边中的短边的下方不抑制软的部分32的流动,故软的部分32按原样朝向半导体芯片1的侧面流动。但是,如上所述,加热加压工具71的热很好地传导到电极焊区11上。因此,在半导体芯片1为长方形的情况下,由于设置在短边侧的电极焊区11的数目比长边侧少,即,被供给的热较少,故短边侧下方的软的部分32成为比长边侧下方的软的部分32流动性低的状态。再者,由于将软的部分32设置成其长度与半导体芯片1的长度相同,故在半导体芯片1的周围不设置成为附着于半导体芯片1的侧面上的源泉的因素。
即,附着于半导体芯片1的该2边一侧的侧面上的情况限于从半导体芯片1与基板2之间流出的各向异性导电膜3。因此,由于附着于半导体芯片1上的量较少,此外,其流动性也不怎么高,故附着到加热加压工具71上的可能性极小。因而,即使在半导体芯片1的短边上也不会过分地形成镶边。
因此,如果利用上述的工序将半导体芯片1热压接到基板2上,则各向异性导电膜3不会附着到加热加压工具71上。此外,如图1中所示,在半导体芯片1的侧面上,镶边34的高度不会达到半导体芯片的背面的高度,而是以适度的大小被形成。
再有,在本发明的第1实施形态中,将各向异性导电膜作成由具有2种不同的流动性的热硬化性树脂构成,但如果在1个各向异性导电膜中能使特定部分的流动性与其它部分不同,则也能得到同样的作用和效果。因而,例如作为第1实施形态的变形例,假定各向异性导电膜由单一材料的热可塑性树脂构成,对于与第1实施形态中的软的部分32相当的部分,如果通过在热压接半导体芯片之前预先进行预热,使其流动性提高,其后进行热压接,则预先未进行预热的部分起到与硬的部分31同样的作用,因此,可得到与本发明的第1实施形态同样的作用和效果。
此外,在该变形例中,如果不对各向异性导电膜的整个边缘进行预热,则该整个边缘起到与硬的部分31同样的作用,因此,可进一步可靠地抑制胺到余热的部分的流动。
其次,根据图3说明与本发明第2实施形态有关的各向异性导电膜。
首先,如图3(1)和(2)中所示,使各向异性导电膜的形状如各向异性导电膜4中所示那样成为框状。然后,将各向异性导电膜4粘贴到基板2上。再有,各向异性导电膜4由热硬化性树脂构成。此外,使各向异性导电膜4的内侧的区域的形状与半导体芯片1的形状大体相同,再者,使该区域的面积与半导体芯片1的面积大体相同或比其稍大。
其次,如图3(3)中所示,在各向异性导电膜4的内侧的区域、即凹部41上,在凹部41的整个面上涂敷膏状的各向异性导电粘接剂5,使得各向异性导电粘接剂5的高度与框状的各向异性导电膜4的高度大体相同。其次,将半导体芯片1放置在膏状的各向异性导电粘接剂5上。其后,与第1实施形态的情况相同,利用加热加压工具71,从与半导体芯片1的电极焊区11的某个面相反一侧的面进行加热加压。
利用以上的工序,进行半导体芯片的安装。再有,在该实施形态中,在将半导体芯片1放置在膏状的各向异性导电粘接剂5上时,如果将半导体芯片1嵌入凹部41中,则也可同时进行半导体芯片1的对准。因此,在本实施形态中,可使半导体芯片1的放置时的定位工序变得简便。
按照以上的结构,由于膏状的各向异性导电粘接剂5的流动性比框状的各向异性导电膜4的流动性高,故虽然朝向半导体芯片1的侧面流动,但由于利用框状的各向异性导电膜4抑制其流动,故可防止膏状的各向异性导电粘接剂5附着到加热加压工具71上。此外,在本实施形态的情况下,由于在半导体芯片1的4边上存在可靠地抑制各向异性导电粘接剂5的流动的因素,故即使在半导体芯片1的形状为正方形的情况下,也能很好地适用。
因此,在本实施形态中,各向异性导电膜3也不会附着到加热加压工具71上,与第1实施形态同样,在半导体芯片1的侧面上以适度的大小形成镶边34。此外,在本实施形态中,可将比各向异性导电膜4流动性高的各向异性导电膜切断为其形状和面积与凹部41大体相同并将其粘贴到凹部41上,来代替在凹部41上涂敷膏状的各向异性导电粘接剂5。再者,也可预先在凹部41上设置比各向异性导电膜4流动性高的各向异性导电膜。
再有,在上述的各实施形态中,被掺合到各向异性导电粘接剂中的导电性粒子可以是金属粒子、或对树脂制的粒子进行了金属电镀的粒子等的任一种粒子,不管其材料、形状如何。此外,可不在半导体芯片的电极上设置凸点,而是在基板的电极上设置了凸点。
此外,在上述的实施形态中,以在半导体芯片的形成了电极的面上且在该面的全部4边上设置了电极的情况作为例子举出,但被设置的电极的配置不限于此,可只在2边上、或该面的整个面上设置了电极。
如上所述,在本发明的实施形态中,在将半导体芯片热压接到基板上时,各向异性导电膜不会附着到加热加压工具上。此外,由于能在半导体芯片的侧面上以适度的大小形成外观良好的镶边,故可提高半导体芯片与基板的机械连接的可靠性。另外,关于本发明的第2实施形态,由于将各向异性导电膜作成框状,由于通过将半导体芯片置于该框内也同时完成半导体芯片的对准,故与半导体芯片的对准有关的工序的管理变得非常容易。
再者,作为利用以上已说明的各向异性导电膜来安装半导体芯片的例子,示出图6。即,图6中示出了利用与本发明的任一实施形态有关的各向异性导电膜4安装了半导体芯片110的电路基板100。再有,一般使用例如玻璃环氧基板等有机系列基板作为电路基板100。在电路基板100上形成了例如由铜构成的键合部,使其成为所希望的电路。而且,通过以机械方式连接键合部与半导体芯片110的外部电极来谋求其电导通。
再有,可将半导体芯片110的安装面积减小到用裸芯片安装的面积,如果将该电路基板100用于电子装置,则可谋求电气装置本身的小型化。此外,在相同面积内,可确保更大的安装空间,也可谋求高性能化。
而且,作为具备该电路基板100的电子装置,在图7中示出了笔记本型个人计算机120,在图8中示出了携带电话机130。
产业上利用的可能性
如以上所叙述的那样,本发明是这样一种各向异性导电膜,该各向异性导电膜粘接半导体芯片与基板,同时成为上述半导体芯片与上述基板的电导通媒体,其特征在于:具有第1部件和与上述第1部件邻接地被配置而构成的第2部件,上述第1部件由具有其流动性比上述第2部件的流动性低的特性的材料来形成,因此,第1部件抑制第2部件的流动,防止各向异性导电膜附着到加热加压工具上。因此,可谋求半导体芯片的安装工序的高效率,同时可谋求提高被安装的半导体芯片的外观。
此外,本发明是这样一种各向异性导电膜,该各向异性导电膜粘接半导体芯片与基板,同时成为上述半导体芯片与上述基板的电导通媒体,其特征在于:具有第1部件和与上述第1部件邻接地被配置而构成的第2部件,上述第1部件由在上述半导体芯片与上述基板的接合时显现出比上述第2部件的流动性低的特性的材料构成,因此,在半导体芯片与基板的接合时,第1部件抑制第2部件的流动,防止各向异性导电膜附着到加热加压工具上。因此,可谋求半导体芯片的安装工序的高效率,同时可谋求提高被安装的半导体芯片的外观。
此外,在具备由各向异性导电膜安装了半导体芯片的基板的半导体装置中,上述各向异性导电膜具有与边缘部相当的第1部件和与上述第1部件相比位于中央侧的第2部件,上述第1部件由具有其流动性比上述第2部件的流动性低的特性的材料来形成,因此,第1部件抑制第2部件的流动,可防止各向异性导电膜附着到加热加压工具上,可大幅度地使清洗加热加压工具的频度下降。因此,可谋求半导体芯片的安装工序的高效率,同时可谋求提高被安装的半导体芯片的外观。
此外,本发明是这样一种半导体装置,该半导体装置具备由各向异性导电膜安装了半导体芯片的基板,其特征在于:上述各向异性导电膜具有与边缘部相当的第1部件和与上述第1部件相比位于中央侧的第2部件,此外,上述第1部件由在上述半导体芯片与上述基板的接合时显现出比上述第2部件的流动性低的特性的材料构成,因此,第1部件抑制第2部件的流动,可防止各向异性导电膜附着到加热加压工具上,可大幅度地使清洗加热加压工具的频度下降。因此,可谋求半导体芯片的安装工序的高效率,同时可谋求提高被安装的半导体芯片的外观。
此外,本发明是这样一种半导体芯片的安装方法,该半导体芯片的安装方法是使形成了电极的半导体芯片的一个面在与基板的形成了电极的面相对的方向上进行安装的半导体芯片的安装方法,其特征在于,具有:将具有第1部件和与上述第1部件邻接地被配置而构成的第2部件的各向异性导电膜粘贴到上述基板的形成了上述电极的面上的工序;将上述半导体芯片放置在上述各向异性导电膜上的工序;以及利用加热加压体一边对上述半导体芯片加热一边对其按压、将其连接到上述基板上的工序,因此,第1部件抑制第2部件的流动,可防止各向异性导电膜附着到加热加压工具上,可大幅度地使清洗加热加压工具的频度下降。因此,可谋求半导体芯片的安装工序的高效率,同时可谋求提高被安装的半导体芯片的外观。
此外,本发明是这样一种半导体芯片的安装方法,该半导体芯片的安装方法是使形成了电极的半导体芯片的一个面在与基板的形成了电极的面相对的方向上进行安装的半导体芯片的安装方法,其特征在于,具有:对由热可塑性树脂构成的各向异性导电膜的与边缘部相比位于中央侧的区域进行加热以提高上述各向异性导电膜的流动性的工序;将上述各向异性导电膜粘贴到上述基板的形成了上述电极的面上的工序;将上述半导体芯片放置在上述各向异性导电膜上的工序;以及利用加热加压体一边对上述半导体芯片加热一边对其按压、将上述半导体芯片连接到上述基板上的工序,因此,可防止各向异性导电膜附着到加热加压工具上,同时可简化半导体芯片粘贴位置的定位工序。因此,各向异性导电膜的边缘部抑制与该边缘部相比位于中央侧的部分的流动,可防止各向异性导电膜附着到加热加压工具上,可大幅度地使清洗加热加压工具的频度下降。因此,可谋求半导体芯片的安装工序的高效率,同时可谋求提高被安装的半导体芯片的外观。
此外,本发明是这样一种半导体芯片的安装方法,该半导体芯片的安装方法是使形成了电极的半导体芯片的一个面在与基板的形成了电极的面相对的方向上进行安装的半导体芯片的安装方法,其特征在于,具有:将形成为框状的各向异性导电膜粘贴到上述基板的形成了上述电极的面上的工序;在上述各向异性导电膜的内侧的区域上设置其流动性比上述各向异性导电膜的流动性高的各向异性导电粘接剂的工序;将上述半导体芯片放置在上述各向异性导电粘接剂上的工序;以及利用加热加压体一边对上述半导体芯片加热一边对其按压、将上述半导体芯片连接到上述基板上的工序,因此,可简化半导体芯片的位置重合,可谋求半导体芯片的安装工序的高效率。再者,可谋求提高被安装的半导体芯片的外观。

Claims (20)

1.一种各向异性导电膜,该各向异性导电膜粘接半导体芯片与基板,同时成为上述半导体芯片与上述基板的电导通媒体,其特征在于:
具有第1部件和与上述第1部件邻接地被配置而构成的第2部件,
上述第1部件由具有其流动性比上述第2部件的流动性低的特性的材料来形成。
2.一种各向异性导电膜,该各向异性导电膜粘接半导体芯片与基板,同时成为上述半导体芯片与上述基板的电导通媒体,其特征在于:
具有第1部件和与上述第1部件邻接地被配置而构成的第2部件,
上述第1部件由在上述半导体芯片与上述基板的接合时显现出比上述第2部件的流动性低的特性的材料构成。
3.如权利要求1或2中所述的各向异性导电膜,其特征在于:
将上述第2部件的形状形成为与上述半导体芯片的形成了电极的面的形状大体相同。
4.如权利要求3中所述的各向异性导电膜,其特征在于:
将上述第2部件的面积形成为与上述半导体芯片的形成了上述电极的面的面积大体相同。
5.一种电路基板,其特征在于:
设置权利要求1至权利要求4的任一项中所述的各向异性导电膜而构成。
6.一种电子装置,其特征在于:
具备权利要求5中所述的电路基板而构成。
7.一种半导体装置,具备由各向异性导电膜安装了半导体芯片的基板而构成,其特征在于:
上述各向异性导电膜具有与边缘部相当的第1部件和与上述第1部件相比位于中央一侧的第2部件,
上述第1部件由具有其流动性比上述第2部件的流动性低的特性的材料来形成。
8.一种半导体装置,具备由各向异性导电膜安装了半导体芯片的基板而构成,其特征在于:
上述各向异性导电膜具有与边缘部相当的第1部件和与上述第1部件相比位于中央一侧的第2部件,
上述第1部件由在上述半导体芯片与上述基板的接合时显现出比上述第2部件的流动性低的特性的材料构成。
9.如权利要求7或8中所述的半导体装置,其特征在于:
将上述第2部件的形状形成为与上述半导体芯片的形成了电极的面的形状大体相同。
10.如权利要求8中所述的半导体装置,其特征在于:
将上述第2部件的面积形成为与上述半导体芯片的形成了上述电极的面的面积大体相同。
11.一种半导体芯片的安装方法,在该方法中,使形成了电极的半导体芯片的一个面在与基板的形成了电极的面相对的方向上进行安装,该方法的特征在于,具有:
将具有第1部件和与上述第1部件邻接地被配置而构成的第2部件的各向异性导电膜粘贴到上述基板的形成了上述电极的面上的工序;
将上述半导体芯片放置在上述各向异性导电膜上的工序;以及
利用加热加压体一边对上述半导体芯片加热一边对其按压、将上述半导体芯片连接到上述基板上的工序。
12.如权利要求11中所述的半导体芯片的安装方法,其特征在于:
上述第1部件具有其流动性比上述第2部件的流动性低的特性。
13.如权利要求11或12中所述的半导体芯片的安装方法,其特征在于:
将上述第2部件的形状形成为与上述一个面的形状大体相同。
14.如权利要求13中所述的半导体芯片的安装方法,其特征在于:
将上述第2部件的面积形成为与上述一个面的面积大体相同。
15.一种半导体芯片的安装方法,在该方法中,使形成了电极的半导体芯片的一个面在与基板的形成了电极的面相对的方向上进行安装,该方法的特征在于,具有:
对由热可塑性树脂构成的各向异性导电膜的与边缘部相比位于中央一侧的区域进行加热以提高上述各向异性导电膜的流动性的工序;
将上述各向异性导电膜粘贴到上述基板的形成了上述电极的面上的工序;
将上述半导体芯片放置在上述各向异性导电膜上的工序;以及
利用加热加压体一边对上述半导体芯片加热一边对其按压、将上述半导体芯片连接到上述基板上的工序。
16.如权利要求15中所述的半导体芯片的安装方法,其特征在于:
将上述各向异性导电膜形成为使上述区域的形状与上述一个面的形状大体相同。
17.一种半导体芯片的安装方法,在该方法中,使形成了电极的半导体芯片的一个面在与基板的形成了电极的面相对的方向上进行安装,该方法的特征在于,具有:
将形成为框状的各向异性导电膜粘贴到上述基板的形成了上述电极的面上的工序;
在上述各向异性导电膜的内侧的区域上设置其流动性比上述各向异性导电膜的流动性高的各向异性导电粘接剂的工序;
将上述半导体芯片放置在上述各向异性导电粘接剂上的工序;以及
利用加热加压体一边对上述半导体芯片加热一边对其按压、将上述半导体芯片连接到上述基板上的工序。
18.如权利要求17中所述的半导体芯片的安装方法,其特征在于:
将上述各向异性导电膜的内侧的区域的形状形成为与上述一个面的形状大体相同。
19.一种半导体装置,其特征在于:
使用权利要求11至权利要求18的任一项中所述的半导体芯片的安装方法来制造。
20.一种电子装置,其特征在于:
具备权利要求19中所述的半导体装置而构成。
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