CN1165989C - 半导体器件和用于制造该半导体器件的方法 - Google Patents

半导体器件和用于制造该半导体器件的方法 Download PDF

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CN1165989C
CN1165989C CNB001092227A CN00109222A CN1165989C CN 1165989 C CN1165989 C CN 1165989C CN B001092227 A CNB001092227 A CN B001092227A CN 00109222 A CN00109222 A CN 00109222A CN 1165989 C CN1165989 C CN 1165989C
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electrode
block type
type electrode
resin
semiconductor
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CN1289146A (zh
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池上五郎
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NEC Corp
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NEC Corp
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Abstract

在半导体器件中，具有块状电极的半导体片状器件和具有片状电极的互连板被定位为相互正对，分布有填充物的树脂插入在所述块状电极和所述片状电极之间，并且块状电极和片状电极相重叠，在重叠电极部分进行热压连接，在它们之间保留填充物，而利用所述树脂把半导体片状器件与互连板粘接在一起。

Description

半导体器件和用于制造该半导体器件的方法
技术领域
本发明涉及一种半导体器件，其具有在互连板与半导体片状器件之间直接连接的结构。
背景技术
为了提高便携性，需要使用于摄像机、笔记本个人电脑的紧凑电子电路器件等等更小和更轻，并且获得更小的电子元件或者相同尺寸但是更高集成的电子元件，以实现更加紧凑和轻量的电子电路设备。
在半导体器件中，尽管已经减小半导体片状器件的尺寸和增加集成度，但是不限于这些改进，还要使半导体片状器件与互连板之间直接连接，从而提高安装密度。
这样的一个例子在图9中示出。在该图中，参考标号1表示半导体片状器件，其具有形成在半导体基片2的正面上的大量块状电极3，该基片上形成有大量电子元件(没有在图中示出)。这些块状电极3一般由焊锡或金所形成。
参考标号4表示互连板，它由形成在绝缘基片5的表面上的铜导电图案(未在图中示出)所形成，然后该导电图案被光刻胶薄膜(未在图中示出)所覆盖，并且在该光刻胶薄膜中在正对块状电极3的位置形成窗口，以暴露部分导电图案，从而在该窗口处形成片状电极6。这些片状电极6通常由厚度为12到18μm的铜膜所形成，其上被镍镀层覆盖达3至5μm的厚度，并且另外在其上镀金达0.03至1μm的厚度。但是，在图中示出单层结构。
参考标号7表示在半导体片状器件1与互连板5之间进行机械连接的树脂，其避免半导体片状器件1上的互连图案被外部腐蚀气体所腐蚀。
上述结构是众所周知的，并且公开于日本未审查专利申请公开S63-241955(现有技术1)、美国专利5795818(现有技术2)、日本未审查专利申请公开S60-262430(现有技术3)、以及日本未审查专利申请公开H9-97816(现有技术4)中。
以上述现有技术为例，在现有技术1中，块状电极3由焊锡所形成，并且半导体片状器件1是连接到互连板4上的倒装片。
在上述现有技术2中，描述了把每块块状电极3约20克的负荷加在片状电极6上，半导体片状器件被加热到240度，并且互连板4被加热到190度，超声振动被施加到电极3和6上，以进行金属—金属结合，并且所示的另一个例子是每块状电极3约施加10克的负载，该半导体片状器件1被加热到190度，并且还把超声振动施加到电极3和6上，以进行金属—金属结合。
在两个现有技术的例子1和2中，在半导体片状器件1与互连板4之间进行机械和电连接之后，把树脂7做为粘合剂灌入到半导体片状器件1与互连板4之间。但是，由于半导体片状器件1与互连板4之间约有100μm的微小空间，因此树脂7难以进入其中，并且即使它进入其中，也容易保留气泡。
现有技术1不在树脂7中保留气泡，但是所涉及的工作很麻烦。
在现有技术2中，尽管可以预见气泡趋于保留在树脂7中，但是其中绝对没有关于如何除去气泡的说明。
与上文相反，在现在技术的例子3和4中，树脂7被灌入到在互连板4上预先包括片状电极6的区域上，半导体片状器件1被提供到该树脂7的上部，并且对其加压，使得片状电极6与块状电极3相重叠，从而强制树脂7从块状电极3与片状电极6之间排出，并且使电极3和6之间电连接。所施加的压力保持在该状态，并且树脂7固化。在它变得足够硬之后，即使所施加的压力消失，半导体片状器件1与互连板4之间的树脂7产生机械连接，并且电极之间的压力保持电连接。
在上述半导体器件中，由于预先灌入到互连板4的上部的树脂7被加压并且挤出，因此气泡难以保留在树脂7中，从而，解决现有技术的例子1和2中所存在的问题。
在现有技术的例子3中，当采用光固树脂时，绝对没有热量施加到半导体片状器件1和互连板4上，并且即使采用热固树脂时，凝固温度的上升不高于150度，结果可以减小构成材料的热变形，并且可以获得具有高度可靠性的连接。
在现有技术的例子4中，描述这样的效果，即，尽管当施加压力以接合块状电极3和片状电极6时采用热固树脂7，但是通过使用固化收缩率比热膨胀系数大的树脂7，即使在高温环境中，由于固化收缩率超过热膨胀系数，因此应力不会使块状电极从片状电极上脱落，使得连接变得稳定；并且在该例子中还描述这样的效果，即，由于块状电极的末端与片状电极6形成点接触，随着压力的施加，接触点进一步加宽，以获得面接触，结果是电极之间的树脂7被从接触部分排出，从而获得更加可靠的接触，而不含杂质。
按照这种方式，在根据现有技术的例子3和4的半导体器件中，即使当树脂7固化时，在与片状电极6重叠的块状电极3的弹性限度内产生压缩形变之后，电极3和6之间的加压接触被保持。
在基于硅的半导体片状器件1和基于环氧树脂的互连板4中，象半导体基片2、块状电极3、绝缘基片5、和片状电极6这样的半导体器件元素的热膨胀系数分别是2.4PPM/℃，15PPM/℃，16PPM/℃，和20PPM/℃，并且由于绝缘基片5、片状电极6和块状电极3的热膨胀系数相类似，因此由于热膨胀所造成的长度差不成问题。
尽管在半导体基片2与块状电极3的热膨胀系数之间具有大的差别，但是由于每个块的直径较小，因此基本上没有问题。
但是，在半导体片状器件1与互连板4之间是由树脂7所粘合的，因此热膨胀系数的比率超过6，并且由于块状电极3的分布长度与各个块状电极3的直径相比相当长，则当半导体器件工作时，使得半导体片状器件1被加热到超过室温，在树脂7的两个粘合表面之间的热膨胀具有大的差别。
例如，如果具有10mm电极分布长度的半导体片状器件被加热到80度，则该电极分布长度被延长1.9μm，而片状电极6的分布长度被延长12.8μm。由热膨胀所造成的长度差被双金属效应所吸收。
在现有技术3和4中，由于电极3和6被加压接触，则当施加由热膨胀所造成的在重叠方向上的应力时，在电极接触表面上具有位置偏移，从而减轻在电极接触部分上的应力，避免电极剥离的问题。
例如在日本专利未审查专利申请公开H8-195414(现有技术5)、H9-266229(现有技术6)、H10-107082(现有技术7)和H11-87424(现有技术8)，以及在日本专利No.2914569(现有技术9)和日本未审查专利申请公开H11-40606(现有技术10)公开一种在树脂7中分散铝或硅的细末以获得膨胀系数之间的平衡的半导体器件。
对于上述现有技术的例子，在现有技术5至9中，在半导体片状器件1与互连板4之间进行电连接之后，把树脂7灌入到各个相对表面之间。特别在现有技术5至8中，其中公开使树脂7在半导体片状器件1侧与互连板4侧的填充物分布不同，以调节热膨胀系数。
在现有技术10中，公开把分散有填充物的树脂7灌入到互连板4上，并且把半导体片状器件1与该互连板4相连接，块状电极3的端部变尖，使其扩散到片状电极6中，从而获得可靠的电连接，而在电极3和6的重叠部分中不存在填充物。
在通过增加块状电极的数目而不增加半导体片状器件的直径来实现高度集成的情况下，块状电极3的直径减小，分布间距减小，并且块状电极分布在交错图案中。
但是，如果块状电极3的直径减小，在施加压力之前，块状电极的高度和形状变大。
在公开于现有技术3和4中的半导体器件中，由于电极金属的弹性形变而实现加压接触，尽管通过电极本身的膨胀可以在高温下保持稳定接触状态，但是在极低温下，由于重叠边界在剥离方向上收缩，因此原来具有低的截面的块状电极受到减小的接触压力，从而增强接触电阻。
如果半导体器件采用具有低块状电极的半导体片状器件在极低的温度下开始工作，则在该半导体片状器件1到达足够高的温度之前，出现不稳定工作的问题。
特别地，当树脂固化时，分散在该树脂7中的无机填充物作为置于电极之间的绝缘衬垫，在它们之间具有小的作用力，并且如果微量树脂保留在该空隙中，则该树脂作为薄膜绝缘衬垫，从而造成接触不良。
如果通过减小块状电极3的直径而减小块状电极的高度，则当压力施加到该重叠部分上时，弹性形变的限度减小，在此之后，在极低的温度下，具有突然增强电极之间的接触电阻的问题。
当在操作启动时和在操作启动之后具有大的温差时，上述问题特别突出，在这种情况下，具有在电极之间产生噪声和电子电路设备发生故障的危险。
即使采用在现有技术10中公开的技术，当块状电极3的直径做得较小，以容纳大量电极时，则难以使其端部变尖，由于片状电极6必须覆盖有到达足够厚度的软金属，从技术和成本方面来说，立即实施该技术是不可能的。
发明内容
相应地，本发明用于解决上述现有技术的问题，并且具有一个目的是提供一种半导体器件，包括：具有块状电极的半导体片状器件；具有片状电极的互连板；以及其中分布有无机填充物的树脂；其特征在于，所述块状电极与所述片状电极被定位为相互正对，分布有填充物的所述树脂插入在所述块状电极与所述片状电极之间，并且所述填充物被保留在形成于所述电极之间的重叠边界部分中，所述重叠部分通过热压连接，使得该半导体片状器件与互连板被所述树脂所粘合，以及所述填充物被保留在所述块状电极和所述片状电极之间的重叠部分的50％或更多之中。
本发明的另一个目的提供一种用于制造半导体器件的方法，其具有如下步骤：把分布有填充物的树脂灌入到形成在一互连板上的片状电极，该互连板具有一绝缘基片，在该基片上沿着一直线形成有大量片状电极，或者把树脂灌入到该片状电极周围区域；使半导体片状器件与一互连板相对并相接近，以把树脂向外压出，该半导体片状器件形成有块状电极并形成在一半导体基片上，该块状电极的直径向端部方向收缩；使所述块状电极的端部插入到该树脂中，并且在所述块状电极与所述片状电极之间截留部分填充物；施加压力以压挤所述块状电极的端部，同时使所述树脂排出形成在所述重叠电极之间的区域，以重叠这两个电极；当至少加热所述半导体片状器件时，在所述块状电极与所述片状电极之间的重叠部分中保持加压状态，以热压所述每个电极的所述重叠部分；以及固化所述树脂，以把所述半导体片状器件与互连板粘接在一起。
在根据本发明的半导体器件中，分布在用于半导体片状器件与互连板之间的粘接的树脂中的部分填充物被保留在热压和连接的块状电极与片状电极之间的重叠边界中。
该半导体器件的结构是部分树脂的填充物截留在块状电极的端部与片状电极之间，该块状电极由软导电材料制成，并具有在端部缩小的直径，片状电极的端部被挤压，以使重叠部分的外围向外膨胀。
在根据本发明的半导体器件中，填充物被保留在50％或更多的块状电极与片状电极的重叠部分中，从而在所有电极重叠部分保持良好的电接触。
因为如果填充物在小于重叠部分的表面面积的10％的区域中的凸块内集中，在围绕剩余填充物的区域的区域中的电极重叠强度下降并且热接合强度减小，填充物应当分散以使得该填充物保留在块状电极与片状电极之间的10％或更大的重叠表面面积中。
另外，通过使得在块状电极与片状电极之间保留填充物的重叠部分的表面面积中的填充物的面积比率为10％或更小，则有可能实现良好的热接合，以获得良好的电连接和机械连接。
通过使用颗粒或纤维填充物作为分散在用于根据本发明的半导体器件的树脂中的填充物，有可能使用于切断热量和电流的表面面积最小化。
在用于制造根据本发明的半导体器件的方法中，分散有填充物的树脂首先被灌入到互连板上，并且半导体片状器件的块状电极被插入到该树脂中，使得在树脂中的部分填充物保留在块状电极与片状电极之间的电极重叠边界处，该方法使得半导体片状器件的加热温度设置在230度到300度的范围内，并且把互连板的加热温度设置在50度到120度的范围内。
附图说明
图1为示出根据本发明的半导体器件的截面视图。
图2为图1的半导体器件的部分切开截面视图。
图3为用于图1的半导体器件的制造中的半导体片状器件的截面视图。
图4为示出制造图3中所示的半导体片状器件的方法的侧视图。
图5为用于制造图1的半导体器件的方法的侧截面视图。
图6为用于制造图1的半导体器件的方法的侧截面视图，其中示出图5中所示的半导体片状器件被提供到灌入有树脂的互连板上方的情况。
图7为用于制造图1的半导体器件的方法的部分放大的侧截面视图，其中示出在块状电极与片状电极之间的热压连接。
图8为示出块状电极与片状电极之间的重叠的部分放大的侧截面视图。
图9为示出根据现有技术的半导体器件的一个例子的侧截面视图。
具体实施方式
下面参照相关附图具体描述本发明的实施例。
下面参照图1和图2描述根据本发明的半导体器件的一个实施例。在这些附图中，参考标号11表示半导体片状器件，在半导体基片12的主表面上形成有大量块状电极13，该块状电极13由象金这样的软导电材料所形成，并且半导体基片12上形成有大量半导体元件(未在图中示出)。
参考标号14表示互连板，在所示例子中，该互连板通过在由玻璃纤维环氧树脂制成的绝缘基片15的一侧上形成铜箔导电图案(未在图中示出)，并且还在该导电图案上覆盖阻焊膜(未在图中示出)而形成，形成窗口以在该阻焊膜上与块状电极部分相对的位置暴露导电图案，从而在该开窗位置形成片状电极16。
参考标号17表示在半导体片状器件11与互连板14之间进行机械连接的树脂，并且避免半导体片状器件11的连接图案(未在图中示出)受到外部气体的腐蚀。
在根据本发明的半导体器件中，采用分散有用于调节热膨胀系数的填充物18的树脂17，部分填充物18被保留在块状电极13与片状电极16之间的重叠边界处。
上述半导体器件的一个实例在下文中参照图3至图7具体描述。首先，如图3中所示，制备半导体片状器件11，其中块状电极13形成在半导体基片12上。
如图4中所示，这些块状电极13’是通过利用放电等焊接形成金球20a而形成的，金线20的下端通过接受超声振动的毛细管19插入，该金球20a被毛细管19的下端压在半导体基片12的预定点上，以通过超声振动进行连接，然后毛细管19和引线20被拉升，并且引线20被在受压挤金球20a的附近切断。如图3所示，该结构具有不同的直径，具有与被压挤金球20a的直径大小相同的大直径底部13a’，以及在引线20拉出的点处的小直径部分13b’，该小直径部分13b’的端部还进一步向其末端收缩，使得该末端具有实心抛物线的形状。
在大直径部分13a’和小直径部分13b’之间，形成由毛细管19的内径结构所确定的形状和大小的中部(未在图中示出)。
在采用具有25μm的直径的金属线的情况下，块状电极13’具有80至95μm的底部直径，20至30μm的底部高度，以及从底部到小直径部分13b’的约70μm的高度。
如图5中所示，在支承台21上，其上形成有片状电极16的互连板14被定位并置于玻璃纤维环氧树脂板(包括基片)15的预定部分上。
片状电极16形成为薄片，具有厚度为12至18μm的铜导电图案，在其上通过镀镍覆盖，达到3至5μm的厚度，并且通过镀金达到0.03至1μm的厚度，进一步在其上覆盖。但是，在该图中，片状电极16被示出为单层。
参考标号22表示树脂灌入装置，其在支承台上灌入树脂17，在水平方向上移动，以把流体灌入到被互连板14上的片状电极16所环绕的区域。
无机填充物18分散在树脂17中。该填充物18是具有直径从2至6μm的铝或硅颗粒或纤维的细末，并且在树脂17中占据50至75％的重量，以调节其热膨胀系数。
参考标号23表示埋在支承台21中的加热器，其通过互连板14加热树脂17。
在树脂灌入装置22把预定量的树脂17提供到由支承台21所支承和定位的互连板14的上部之后，如图6中所示，在下端的一个吸入孔24a打开，并且具有由脉冲电流加热的内部加热器25的真空夹持头24夹持半导体片状器件11，使块状电极13面向下，并且移动到互连板14上方。
真空夹持头24由负载单元压力驱动，并且当施加排斥力时，把预设的固定负载施加到在下降过程中的半导体片状器件11。
尽管未在图中示出，由真空夹持头24所夹持的半导体片状器件11的块状电极13位置通过图像识别所检测，根据该位置数据，真空夹持头24的运动被控制使得块状电极13与片状电极16重叠。当半导体片状器件11接近互连板16时，其与树脂17相接触并进一步接近，该树脂17向外挤出，使得在块状电极13与片状电极16相接触之前，树脂17覆盖片状电极16，并且在块状电极13与片状电极16相接触的点处，如图7中所示，几乎所有树脂17被压到半导体片状器件11外部的区域。
然后，如图8中所示，块状电极13’被从由图中的虚线所示的位置降低，并且当进一步把压力施加到半导体片状器件11上时，该块状电极13的端部被压挤，使得小直径部分13b的外围向外膨胀，如图中的实线所示。
块状电极13’的端部的形状由金属线的提拉和截断所形成，并且其基本上为实心的抛物线形状，尽管以放大的形式示出，但是该端部表现出微小的凸起。
因此，当块状电极13的端部与片状电极16相接触时，填充物18被截留在该电极之间。
由于真空夹持头24以固定的作用力挤压半导体片状器件11，所以负载集中在块状电极13端部截留填充物18的微小表面面积上，从而促进块状电极13端部的挤压。
当发生上述情况时，形成在块状电极12和片状电极16的外围表面之间的夹角连续变小，向外膨胀到外围边界与片状电极16紧密接触，使得位于膨胀部分的外围的填充物18几乎完全从重叠部分排出。
因此，电极13和16相重叠，并且填充物18保留在块状电极13与片状电极16的重叠边界的中心部分处。
由于该负载被块状电极13的端部所集中，因此截留的填充物18表现出扩散的情况，象金这样的软金属甚至扩散到比金更硬的镍和铜中，从而不但获得两者之间的机械连接，而且避免在重叠表面的方向上的位置偏移，使得即使在块状电极13被挤压的过程中，形变的中心被固定，导致电极的重叠部分的均匀连接。
这完成实现块状电极13与片状电极16之间的压接的处理，在这一点上，该真空夹持头24保持30克力每块状电极的压力作用状态，电能被施加到加热器23上，以便于加热互连板14，并且电能进一步施加到真空夹持头24的加热器25，以便于加热半导体片状器件11。
加热互连板14的加热器23被设置，使得片状电极16的表面温度达到50至120度，在该温度不会对绝缘基片15造成软化的损坏，并且加热半导体片状器件11的加热器25被设置，使得块状电极13的温度到达230度至300度，该加热时间被设置，使得树脂17至少半固化，对电极13和16的重叠部分加热持续预定的时间量，从而实现热压接合。
当按照这种方式电极13和16被热压并且树脂17为半固化时，从加热器23和25上断开电源，半导体片状器件11从真空夹持头上释放并上升，并且完成的半导体器件被从支承台21的上部移去。
利用具有上述形状和尺寸的152个块状电极的半导体片状器件11、以及具有70％重量含量的填充物的树脂17制造半导体器件，该半导体器件的树脂17由发烟硝酸除去，并且半导体片状器件11从互连板上剥离，以观察在电极之间的重叠边界表面中的填充物17的状态，发现在保留填充物的重叠边界表面的中心部分处的电极数目为78个，并且在60％的情况中为90个，填充物保留在大于50％的块状电极与片状电极之间的重叠位置中。
在观察填充物18所保留的位置时，方向保留的填充物几乎全部集中在块状电极与片状电极之间的重叠的中心部分中，填充物保留在小于10％的块状电极与片状电极之间的重叠表面面积中。
上述情况被认为是由于紧接着在块状电极13’与片状电极16相接触之后，片状电极形成为由软金属所制成的抛物线实心形状，块状电极13’的尖端被挤压的速度比位于块状电极13’附近的填充物18排出的速度更快，使得填充物18截留在大于10％的电极之间的重叠表面面积的区域中。
随着从重叠部分的中心部分移向外围的距离增加，发现保留在电极之间的重叠部分中的填充物18变得稀疏，并且其所保留的位置不均匀，电极之间保留填充物的的重叠表面的部分为10％或更小，并且电极之间的电阻增加不影响连续性。
在利用不包含填充物的树脂制造半导体器件的对比例时，树脂被从该例子和根据本发明的半导体器件中除去，通过使半导体片状器件11的侧壁推向与互连板平行的方向观察剥离强度，发现并无差别。
这被认为是由于保留在电极之间的填充物18扩散到块状电极13’与片状电极16的两端中，从而避免在块状电极13’上的中心位置位移，这起着消除每个块状电极13’的膨胀形状中的变化的作用。
在挤压块状电极13’的初期阶段，在块状电极13’与片状电极16相接触的部分被填充物18分为微小表面区域，负载集中在这些微小表面区域上，从而增加块状电极13’在填充物的外围区域处与片状电极16之间的接触压力，使得即使保留填充物18，接触电阻也保持较低。
尽管本发明的上述实施例是对半导体器件具有用20μm直径的金属线形成的块状电极的情况进行描述的，但是通过采用直径小于25μm(例如20μm或18μm)的金属线，有可能使块状电极的更小，并且使其高也更小，使得即使这些尺寸表现出大的不均匀性，也能够在块状电极与片状电极之间获得良好的连接。
(根据完成的)执行一个试验，其中使半导体器件被长时间保存在极低的温度下，在该温度从固定的低温上升以开始工作，然后进一步上升到固定的高温，在该操作停止并且温度降低之后，随后冷却到极低的温度，并且重复上述温度循环，可以确认，无论该块状电极的尺寸如何，工作是稳定的，而不产生噪声，并且获得良好的电极连接。
通过采用上文具体描述的结构，当该电极被热压在一起时，树脂填充物被保留在块状电极与片状电极之间的重叠部分处，半导体片状器件和互连板被树脂粘接在一起，从而获得电极之间良好、稳定的电接触，并且使得电极做得极小，以容纳大量电极。

Claims (9)

1.一种半导体器件，包括：
具有块状电极的半导体片状器件；
具有片状电极的互连板；以及
其中分布有无机填充物的树脂；
其特征在于，所述块状电极与所述片状电极被定位为相互正对，分布有填充物的所述树脂插入在所述块状电极与所述片状电极之间，并且所述填充物被保留在形成于所述电极之间的重叠边界部分中，所述重叠部分通过热压连接，使得该半导体片状器件与互连板被所述树脂所粘合，以及
所述填充物被保留在所述块状电极和所述片状电极之间的重叠部分的50％或更多之中。
2.根据权利要求1所述的半导体器件，其特征在于，所述块状电极由软导电材料所形成，使得其末端部分具有收缩的直径，并且所述树脂的部分所述填充物被截留在所述块状电极的末端部分与所述片状电极之间，所述片状电极末端部分被压挤，以使得重叠部分的外围边缘向外膨胀。
3.根据权利要求1所述的半导体器件，其特征在于，所述填充物被保留在形成于所述块状电极与所述使片状电极之间的重叠区域的中间部分中。
4.根据权利要求3所述的半导体器件，其特征在于，所述填充物被保留在所述块状电极与所述片状电极之间的重叠部分的10％或更多的表面区域中。
5.根据权利要求4所述的半导体器件，其特征在于，包括所述填充物的区域的面积是所述填充物保留并形成在所述块状电极与所述片状电极之间的面积的10％或更小。
6.根据权利要求1所述的半导体器件，其特征在于，所述填充物是微粒或纤维。
7.一种用于制造半导体器件的方法，其中包括：
把分布有填充物的树脂灌入到具有一绝缘基片的互连板上，在该绝缘基片上形成有大量片状电极；
使半导体片状器件与一互连板相对并相接近，以把树脂向外压出，该半导体片状器件形成有块状电极并形成在一半导体基片上，该块状电极的直径向端部方向收缩；
使所述块状电极的端部插入到该树脂中，并且在所述块状电极与所述片状电极之间截留部分填充物；
施加压力以压挤所述块状电极的端部，同时使所述树脂排出形成在所述重叠电极之间的区域，以重叠这两个电极；
当至少加热所述半导体片状器件时，在所述块状电极与所述片状电极之间的重叠部分中保持加压状态，以热压所述每个电极的所述重叠部分；以及
固化所述树脂，以把所述半导体片状器件与互连板粘接在一起。
8.根据权利要求7所述的用于制造半导体器件的方法，其特征在于，所述半导体片状器件被加热到230摄氏度和300摄氏度的温度范围内。
9.根据权利要求7所述的用于制造半导体器件的方法，其特征在于，所述互连板被加热到50摄氏度和120摄氏度的温度范围内。
CNB001092227A 1999-09-20 2000-06-15 半导体器件和用于制造该半导体器件的方法 Expired - Fee Related CN1165989C (zh)

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