CN1292154A - 辐射发送和/或接收元件 - Google Patents

辐射发送和/或接收元件 Download PDF

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CN1292154A
CN1292154A CN99803350A CN99803350A CN1292154A CN 1292154 A CN1292154 A CN 1292154A CN 99803350 A CN99803350 A CN 99803350A CN 99803350 A CN99803350 A CN 99803350A CN 1292154 A CN1292154 A CN 1292154A
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G·韦特尔
H·布伦纳
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Abstract

辐射发送和/或接收元件,其中辐射发送和/或接收光电芯片(1)固定在电导体框架(3)的芯片托架(2)上,其中芯片托架(2)的部分区域和外部电连接件(4,5)的部分区域被不能透过辐射的基体(8)封闭。基体有一个槽(9),在该槽中设置芯片(1),槽中有一个透明的窗(10)。根据本发明芯片托架(2)直到芯片(1)所固定的部位(6)、外部电连接件(4,5)直到一个或多个到芯片(1)的电连接导线(11)固定的部位,完全被不能透过辐射的基体(8)封闭。

Description

辐射发送和／或接收元件
本发明涉及一种如权利要求1前序部分所述的辐射发送和／或接收元件。本发明尤其涉及这样的半导体发光二极管(LED)-元件。
这样的辐射发送和／或接收元件例如可从出版物SiemensComponents 29(1991)第4册，第147至149页“Siemens SMT-TOPLEDfür die Oberflchenmontage”已知。在本文图4中示意示出的已知可表面安装的发光二极管(LED)中，发送辐射的半导体芯片101固定在平面金属导体框架103的平面芯片托架102上。导体框架103由芯片托架102与第一外部电连接件104和与该第一外部电连接件绝缘的第二外部电连接件105以及用于搭接半导体芯片101的电接线111的搭接部位组成。带有半导体芯片101的芯片托架102和两个外部半导体连接件104，105的部分区域被一个塑料包封层120包围，该包封层由一个不能透过辐射的塑料基体108及一个反射槽109和填嵌该反射槽109的能透过辐射的塑料窗110组成。该塑料基体108由一个具有约90％的高漫射反射率的热塑性塑料组成。
反射槽109具有一个平行于芯片托架102的安装表面的底面113和一个与底面113成钝角斜置的侧壁112，使得其可用作为从半导体芯片101发出的辐射的反射体。底面113位于与平面导体框架103面向半导体芯片101的表面同一个平面内，使得反射体的底部大部分由导体框架表面构成。芯片托架102和第二外部电连接件105因此具有与能透过辐射的塑料窗110较大的接触面。
这种已知的可表面安装的发光二极管的一个具体问题是，在元件内部温度变化很大时或者元件环境温度变化很大时(例如在汽车中)，由于通常用金属做成的导体框架103和通常用透明环氧树脂做成的塑料窗110的不同热膨胀系数，在导体框架103和能透过辐射的窗110之间的接触面会出现很大的剪切力，致使常常导致窗110从导体框架103脱离。由此在导体框架103和塑料窗110之间产生的缝隙会使元件中半导体芯片101发出的电磁辐射由于多次反射而被吸收从而丢失。
此外缝隙的形成会从导体框架103和塑料窗110之间的缝隙一直延续到塑料包封层120的外表面，这会导致湿度侵入到半导体芯片101并导致损坏。
本发明的任务是，改进前述类型的辐射发送和／或接收元件，其中减小了窗和导体框架之间的接触面的脱离危险。
该任务是通过具有权利要求1所述特征的辐射发送和／或接收元件实现的。根据本发明的元件的其它改进是从属权利要求2至4的内容。
根据本发明，槽内不能透过辐射的基体从槽的底面到芯片托架具有第一窗口，在该窗口内芯片与芯片托架相连。另外，槽从底面起具有至少一个第二窗口通到外部电连接件，在该窗口内到芯片的电连接导线与导体框架相连。这种改进的特别的优点在于，基体能够以简单方式用相应成型的注塑工具制造。
在包封层中，芯片托架最好直到半导体芯片所固定的表面部位、外部电连接件直到一个或多个到芯片的连接导线所固定的各表面部位，基本上全部被不能透过辐射的基体所封闭。
结果，在根据本发明的元件中将能透过辐射的窗和导体框架之间的接触面降至最小。因此与已知的元件相比，在温度变化时，该接触面上的机械剪切力明显减小，这避免了脱离危险。
在辐射发送和／或接收元件的优选实施例中，芯片托架和外部电连接件在芯片或者电连接件所固定的部位各有一个弯向槽的弯头，使得芯片托架表面的部分区域和外部电连接件表面的部分区域基本上与槽的底面位于同一平面内或者向槽内突出。该实施例的优点在于，可以使用传统的、制造上述已知SMT-T0PLED-元件所使用的注塑工具来制造，对于不同的导体框架设计例如不同的半导体和电连接件布置，可以总用同一个注塑工具。
另外特别有利的是，在根据本发明的元件中，导体框架邻接在窗上的金属表面的大小降至最小，由此可以获得改善的槽的整体反射能力。导体框架的金属通常具有比基体材料小的反射率，因此从芯片发出的辐射在此处更强地被吸收。由于这个原因，在已知的元件中，使用时可以在反射体内看到较大的暗区。
为了提高光输出，基体最好由用漫射反射率大于80％的材料尤其是用被添加的合成树脂制成的元件构成。
下面借助两个实施例及图1至4更详细地描述本发明。图示为：
图1是第一实施例的垂直横截面的示意图，
图2是图1所示实施例的俯视图的示意图，
图3是第二实施例的垂直横截面的示意图，
图4是根据现有技术的辐射发送和／或接收半导体元件的示意图(上面所述)。
在附图中，不同实施例的同一个以及相同功能的构件用同一个附图标记表示。
图1和2中的元件涉及可表面安装方式(表面安装技术(SMT))的发光二极管元件。其由一个电导体框架3(例如用金属制成)与一个芯片托架2、第一外部电连接件4和第二外部电连接件5、一个固定在芯片托架2上的发出辐射的半导体芯片1(LED-芯片)、一个连接导体11(搭接金属线)和一个方形塑料包封层20组成。
半导体芯片1在其前侧和后侧各有一个触头金属喷涂17，18。在半导体芯片1后侧的触头金属喷涂18例如借助金属焊料或者导电的粘合剂与芯片托架2相连，在半导体芯片1前侧的触头金属喷涂17借助例如用金或者其它合适的金属材料制成的搭接金属线11与第二外部电连接件5导电连接。
塑料包封层20由一个不能透过辐射的反光塑料基体8和一个能透过辐射的塑料窗10构成，从该基体伸出外部电连接件4，5。塑料基体8具有反射槽9，槽内设置半导体芯片1并填嵌塑料窗10。反射槽9有一个平行于芯片托架2安装表面的底面13和一个与该底面13成钝角斜置的侧壁12，使得其可用作从半导体芯片1发出的辐射的反射体。
塑料基体8和塑料窗10最好由一种填充有提高反射的材料的合成树脂或热塑性塑料或者用一种透明的合成树脂或聚碳酸酯制成。适于作合成树脂填料的例如有金属粉末、金属氧化物、碳酸盐或者硅酸盐。
芯片托架2基本上直到半导体芯片1例如通过芯片接合固定的表面部位6、外部电连接件4，5直到一个或多个到半导体芯片1的电连接导线11例如通过金属线搭接固定的各表面部位7，都在塑料包封层20内完全被不能透过辐射的塑料基体8封闭。在该最佳实施例中是这样实现这一点的，即不能透过辐射的塑料基体8在槽9内有一个通向芯片托架2的第一窗口6和至少一个通向外部电连接件4，5的第二窗口7，在这些窗口中半导体芯片1或者到半导体芯片1的电连接导线11与导体框架3相连。
图3中示出的实施例与图1和2中的实施例的主要不同在于，不设有到芯片托架2或者到连接件4，5的窗口6，7。这里代替窗口6，7的是在芯片托架2和外部电连接件4，5上、半导体芯片1和电连接导线11与导体框架3相连的部位，各有一个弯向槽9的弯头14，15，使得芯片托架2的表面部分区域和外部电连接件4，5与槽9的底面13位于同一个平面上。作为另一种选择，也可以使弯曲部位伸到槽9内。
很显然，借助实施例对本发明所作的描述不能理解为是对本发明的限制。相反地，本发明也可以用在光电二极管元件、光电晶体三极管元件或者聚合物-发光二极管元件中。

Claims (4)

1．辐射发送和／或接收元件，其中至少有一个发出电磁辐射和／或接收电磁辐射的芯片(1)固定在电导体框架(3)的至少一个芯片托架(2)上，导体框架(3)有至少两个与芯片(1)导电连接的外部电连接件(4，5)，其中芯片托架(2)和外部电连接件(4，5)的部分区域被包封层(20)封闭，该包封层具有一个不能透过辐射的基体(8)和一个能透过辐射的窗(10)，外部电连接件(4，5)从该包封层伸出，其中不能透过辐射的基体(8)具有一个槽(9)，在该槽内设置半导体芯片(1)，窗(10)位于槽内或上方，其特征在于，-从槽(9)的底面起，形成通向芯片托架(2)的第一窗口(6)，在该窗口中芯片(1)固定在芯片托架(2)上，-从槽(9)的底面起，至少有一个第二窗口(7)通向至少一个外部电连接件(4，5)，在该窗口中至少一个到芯片(1)的电连接导线(11)与至少一个外部电连接件(4，5)相连。
2．如权利要求1所述的辐射发送和／或接收元件，其特征在于，至少芯片托架(2)或者至少一个外部电连接件(4，5)在各自的窗口(6，7)部位各具有一个弯向槽(9)的弯头(14，15)，使得芯片托架(2)的表面部分区域或者外部电连接件(4，5)的表面部分区域基本上与槽(9)的底面(13)位于同一个平面或者伸到槽(9)中。
3．如权利要求1或2所述的辐射发送和／或接收元件，其特征在于，槽(9)做成反射槽。
4．如权利要求1至3中任一项所述的辐射发送和／或接收元件，其特征在于，基体(8)由一种漫射反射率大于80％的材料制成。
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Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102064246A (zh) * 2009-11-17 2011-05-18 斯坦雷电气株式会社 发光装置及其制造方法
CN102201525A (zh) * 2010-03-25 2011-09-28 Lg伊诺特有限公司 发光器件封装及具有该发光器件封装的照明系统
CN102214648A (zh) * 2010-04-01 2011-10-12 Lg伊诺特有限公司 发光器件封装和照明系统
US8110437B2 (en) 2002-05-16 2012-02-07 Osram Opto Semiconductors Gmbh Method for attaching a semiconductor chip in a plastic encapsulant, optoelectronic semiconductor component and method for the production thereof
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Families Citing this family (159)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19549818B4 (de) * 1995-09-29 2010-03-18 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiter-Bauelement
DE19755734A1 (de) * 1997-12-15 1999-06-24 Siemens Ag Verfahren zur Herstellung eines oberflächenmontierbaren optoelektronischen Bauelementes
DE10051465A1 (de) 2000-10-17 2002-05-02 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Halbleiterbauelements auf GaN-Basis
TWI292227B (en) * 2000-05-26 2008-01-01 Osram Opto Semiconductors Gmbh Light-emitting-dioed-chip with a light-emitting-epitaxy-layer-series based on gan
JP4926337B2 (ja) * 2000-06-28 2012-05-09 アバゴ・テクノロジーズ・ジェネラル・アイピー（シンガポール）プライベート・リミテッド 光源
CA2417172C (en) * 2000-07-07 2010-10-12 Cosmo Plant Co., Ltd. Plant cultivating method, cultivating device, and its lighting device
WO2002005356A1 (de) 2000-07-12 2002-01-17 Hella Fahrzeugteile Austria Gmbh & Co Kg Leuchte mit einer led-lichtquelle
DE10041328B4 (de) * 2000-08-23 2018-04-05 Osram Opto Semiconductors Gmbh Verpackungseinheit für Halbleiterchips
US6734536B2 (en) * 2001-01-12 2004-05-11 Rohm Co., Ltd. Surface-mounting semiconductor device and method of making the same
DE10117889A1 (de) * 2001-04-10 2002-10-24 Osram Opto Semiconductors Gmbh Leiterrahmen und Gehäuse für ein strahlungsemittierendes Bauelement, strahlungsemittierendes Bauelement sowie Verfahren zu dessen Herstellung
JP3659635B2 (ja) * 2001-04-10 2005-06-15 株式会社東芝 光半導体装置
DE10131698A1 (de) * 2001-06-29 2003-01-30 Osram Opto Semiconductors Gmbh Oberflächenmontierbares strahlungsemittierendes Bauelement und Verfahren zu dessen Herstellung
US6812481B2 (en) * 2001-09-03 2004-11-02 Toyoda Gosei Co., Ltd. LED device and manufacturing method thereof
JP3768864B2 (ja) * 2001-11-26 2006-04-19 シチズン電子株式会社 表面実装型発光ダイオード及びその製造方法
DE10241989A1 (de) * 2001-11-30 2003-06-18 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
JP4330835B2 (ja) * 2001-12-28 2009-09-16 三菱電機株式会社 光ピックアップ装置
JP4211359B2 (ja) 2002-03-06 2009-01-21 日亜化学工業株式会社 半導体装置の製造方法
US8294172B2 (en) 2002-04-09 2012-10-23 Lg Electronics Inc. Method of fabricating vertical devices using a metal support film
US20030189215A1 (en) 2002-04-09 2003-10-09 Jong-Lam Lee Method of fabricating vertical structure leds
US6841802B2 (en) 2002-06-26 2005-01-11 Oriol, Inc. Thin film light emitting diode
DE10237084A1 (de) * 2002-08-05 2004-02-19 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines elektrischen Leiterrahmens und Verfahren zum Herstellen eines oberflächenmontierbaren Halbleiterbauelements
DE10261675B4 (de) * 2002-12-31 2013-08-14 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement mit strahlungsdurchlässiger elektrischer Kontaktschicht
KR101059361B1 (ko) * 2003-01-16 2011-08-24 파나소닉 주식회사 리드 프레임 및 반도체 발광장치
TWI237546B (en) * 2003-01-30 2005-08-01 Osram Opto Semiconductors Gmbh Semiconductor-component sending and/or receiving electromagnetic radiation and housing-basebody for such a component
JP3910171B2 (ja) * 2003-02-18 2007-04-25 シャープ株式会社 半導体発光装置、その製造方法および電子撮像装置
JP4001169B2 (ja) * 2003-03-14 2007-10-31 住友電気工業株式会社 半導体装置
US7262550B2 (en) * 2003-04-15 2007-08-28 Luminus Devices, Inc. Light emitting diode utilizing a physical pattern
JP2006525682A (ja) 2003-04-30 2006-11-09 クリー　インコーポレイテッド 高出力固体発光素子パッケージ
US7005679B2 (en) 2003-05-01 2006-02-28 Cree, Inc. Multiple component solid state white light
TWI220076B (en) * 2003-08-27 2004-08-01 Au Optronics Corp Light-emitting device
US7321161B2 (en) * 2003-12-19 2008-01-22 Philips Lumileds Lighting Company, Llc LED package assembly with datum reference feature
JP2005197329A (ja) * 2004-01-05 2005-07-21 Stanley Electric Co Ltd 表面実装型半導体装置及びそのリードフレーム構造
US20050167796A1 (en) * 2004-01-29 2005-08-04 Tay Kheng C. Miniaturised surface mount optoelectronic component
US7696526B2 (en) * 2004-01-29 2010-04-13 Dominant Opto Tech Sdn Bhd Surface mount optoelectronic component
DE102004014207A1 (de) * 2004-03-23 2005-10-13 Osram Opto Semiconductors Gmbh Optoelektronisches Bauteil mit mehrteiligem Gehäusekörper
JP5366399B2 (ja) * 2004-05-31 2013-12-11 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング 光電子半導体構成素子及び該構成素子のためのケーシング基体
US7534633B2 (en) 2004-07-02 2009-05-19 Cree, Inc. LED with substrate modifications for enhanced light extraction and method of making same
KR100867515B1 (ko) * 2004-12-06 2008-11-07 삼성전기주식회사 발광소자 패키지
US20070145386A1 (en) * 2004-12-08 2007-06-28 Samsung Electro-Mechanics Co., Ltd. Semiconductor light emitting device and method of manufacturing the same
KR100624449B1 (ko) * 2004-12-08 2006-09-18 삼성전기주식회사 요철 구조를 포함하는 발광 소자 및 그 제조 방법
US9070850B2 (en) * 2007-10-31 2015-06-30 Cree, Inc. Light emitting diode package and method for fabricating same
US9793247B2 (en) 2005-01-10 2017-10-17 Cree, Inc. Solid state lighting component
US7821023B2 (en) 2005-01-10 2010-10-26 Cree, Inc. Solid state lighting component
DE102005010311A1 (de) * 2005-03-03 2006-09-14 Atmel Germany Gmbh Verfahren und Gießform zur Herstellung eines optischen Halbleitermoduls
DE102005017527A1 (de) * 2005-04-15 2006-11-02 Osram Opto Semiconductors Gmbh Oberflächenmontierbares optoelektronisches Bauelement
KR100662844B1 (ko) * 2005-06-10 2007-01-02 삼성전자주식회사 Ｌｅｄ 패키지 및 그 제조방법과 이를 이용한 ｌｅｄ어레이 모듈
US8669572B2 (en) * 2005-06-10 2014-03-11 Cree, Inc. Power lamp package
JP4761848B2 (ja) * 2005-06-22 2011-08-31 株式会社東芝 半導体発光装置
US7196354B1 (en) 2005-09-29 2007-03-27 Luminus Devices, Inc. Wavelength-converting light-emitting devices
KR101241650B1 (ko) 2005-10-19 2013-03-08 엘지이노텍 주식회사 엘이디 패키지
WO2007073496A2 (en) 2005-12-22 2007-06-28 Cree Led Lighting Solutions, Inc. Lighting device
JP2009530798A (ja) 2006-01-05 2009-08-27 イルミテックス， インコーポレイテッド Ｌｅｄから光を導くための独立した光学デバイス
US8044412B2 (en) 2006-01-20 2011-10-25 Taiwan Semiconductor Manufacturing Company, Ltd Package for a light emitting element
US7675145B2 (en) * 2006-03-28 2010-03-09 Cree Hong Kong Limited Apparatus, system and method for use in mounting electronic elements
JP5091421B2 (ja) * 2006-04-07 2012-12-05 株式会社東芝 半導体発光装置
CN102800786B (zh) 2006-04-24 2015-09-16 克利公司 发光二极管和显示元件
US8748915B2 (en) * 2006-04-24 2014-06-10 Cree Hong Kong Limited Emitter package with angled or vertical LED
US7635915B2 (en) * 2006-04-26 2009-12-22 Cree Hong Kong Limited Apparatus and method for use in mounting electronic elements
KR20090013230A (ko) * 2006-06-02 2009-02-04 히다치 가세고교 가부시끼가이샤 광반도체소자 탑재용 패키지 및 이것을 이용한 광반도체장치
KR100809210B1 (ko) * 2006-07-10 2008-02-29 삼성전기주식회사 고출력 ｌｅｄ 패키지 및 그 제조방법
US8735920B2 (en) 2006-07-31 2014-05-27 Cree, Inc. Light emitting diode package with optical element
US8367945B2 (en) * 2006-08-16 2013-02-05 Cree Huizhou Opto Limited Apparatus, system and method for use in mounting electronic elements
US7635869B2 (en) * 2006-09-14 2009-12-22 Lumination Llc Support with recessed electrically conductive chip attachment material for flip-chip bonding a light emitting chip
DE102006046678A1 (de) * 2006-09-29 2008-04-03 Osram Opto Semiconductors Gmbh Gehäuse für ein optoelektronisches Bauelement, optoelektronisches Bauelement und Verfahren zum Herstellen eines Gehäuses für ein optoelektronisches Bauelement
US7789531B2 (en) 2006-10-02 2010-09-07 Illumitex, Inc. LED system and method
US8093619B2 (en) 2006-12-28 2012-01-10 Nichia Corporation Light emitting device
US9711703B2 (en) * 2007-02-12 2017-07-18 Cree Huizhou Opto Limited Apparatus, system and method for use in mounting electronic elements
US7993038B2 (en) 2007-03-06 2011-08-09 Toyoda Gosei Co., Ltd. Light-emitting device
JP5179766B2 (ja) * 2007-03-08 2013-04-10 スタンレー電気株式会社 半導体発光装置およびその製造方法
JP4205135B2 (ja) 2007-03-13 2009-01-07 シャープ株式会社 半導体発光装置、半導体発光装置用多連リードフレーム
JP2008258530A (ja) * 2007-04-09 2008-10-23 Rohm Co Ltd 半導体発光装置
KR100901618B1 (ko) 2007-04-19 2009-06-08 엘지이노텍 주식회사 발광 다이오드 패키지 및 제조방법
KR100855065B1 (ko) * 2007-04-24 2008-08-29 삼성전기주식회사 발광 다이오드 패키지
DE102007029369A1 (de) * 2007-06-26 2009-01-02 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements
JP2009021426A (ja) * 2007-07-12 2009-01-29 Sharp Corp チップ部品型ｌｅｄ及びその製造方法
US7652297B2 (en) * 2007-09-11 2010-01-26 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Light emitting device
CN101388161A (zh) * 2007-09-14 2009-03-18 科锐香港有限公司 Led表面安装装置和并入有此装置的led显示器
JP2009099771A (ja) * 2007-10-17 2009-05-07 Rohm Co Ltd 半導体発光モジュール
USD615504S1 (en) 2007-10-31 2010-05-11 Cree, Inc. Emitter package
US10256385B2 (en) 2007-10-31 2019-04-09 Cree, Inc. Light emitting die (LED) packages and related methods
US8866169B2 (en) * 2007-10-31 2014-10-21 Cree, Inc. LED package with increased feature sizes
JP5558665B2 (ja) * 2007-11-27 2014-07-23 パナソニック株式会社 発光装置
USD633631S1 (en) 2007-12-14 2011-03-01 Cree Hong Kong Limited Light source of light emitting diode
US9431589B2 (en) 2007-12-14 2016-08-30 Cree, Inc. Textured encapsulant surface in LED packages
DE102007060206A1 (de) * 2007-12-14 2009-06-18 Osram Opto Semiconductors Gmbh Anordnung mit mindestens einem optoelektronischen Halbleiterbauelement
USD634863S1 (en) 2008-01-10 2011-03-22 Cree Hong Kong Limited Light source of light emitting diode
EP2240968A1 (en) 2008-02-08 2010-10-20 Illumitex, Inc. System and method for emitter layer shaping
JP5358104B2 (ja) * 2008-02-25 2013-12-04 豊田合成株式会社 発光装置
TWI422058B (zh) * 2008-03-04 2014-01-01 Everlight Electronics Co Ltd 發光二極體封裝結構與其製造方法
US8049230B2 (en) * 2008-05-16 2011-11-01 Cree Huizhou Opto Limited Apparatus and system for miniature surface mount devices
JP5440010B2 (ja) 2008-09-09 2014-03-12 日亜化学工業株式会社 光半導体装置及びその製造方法
US9425172B2 (en) 2008-10-24 2016-08-23 Cree, Inc. Light emitter array
CA2683703A1 (en) * 2008-10-28 2010-04-28 Abl Ip Holding, Llc Light emitting diode luminaires and applications thereof
US8791471B2 (en) 2008-11-07 2014-07-29 Cree Hong Kong Limited Multi-chip light emitting diode modules
TW201020643A (en) * 2008-11-25 2010-06-01 Chi Mei Lighting Tech Corp Side view type light-emitting diode package structure, and manufacturing method and application thereof
TW201034256A (en) 2008-12-11 2010-09-16 Illumitex Inc Systems and methods for packaging light-emitting diode devices
EP2197052A3 (en) * 2008-12-15 2015-10-07 Everlight Electronics Co., Ltd. Light emitting diode package structure
TWI426206B (zh) * 2008-12-25 2014-02-11 Au Optronics Corp 發光二極體裝置
US8368112B2 (en) 2009-01-14 2013-02-05 Cree Huizhou Opto Limited Aligned multiple emitter package
US10431567B2 (en) 2010-11-03 2019-10-01 Cree, Inc. White ceramic LED package
US8610156B2 (en) * 2009-03-10 2013-12-17 Lg Innotek Co., Ltd. Light emitting device package
KR101092063B1 (ko) * 2009-04-28 2011-12-12 엘지이노텍 주식회사 발광소자 패키지 및 그 제조방법
JP5481111B2 (ja) * 2009-07-02 2014-04-23 新電元工業株式会社 半導体装置
US8415692B2 (en) * 2009-07-06 2013-04-09 Cree, Inc. LED packages with scattering particle regions
US8598809B2 (en) 2009-08-19 2013-12-03 Cree, Inc. White light color changing solid state lighting and methods
US8585253B2 (en) 2009-08-20 2013-11-19 Illumitex, Inc. System and method for color mixing lens array
US8449128B2 (en) 2009-08-20 2013-05-28 Illumitex, Inc. System and method for a lens and phosphor layer
US8101962B2 (en) * 2009-10-06 2012-01-24 Kuang Hong Precision Co., Ltd. Carrying structure of semiconductor
KR101014013B1 (ko) * 2009-10-15 2011-02-10 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
KR101081193B1 (ko) 2009-10-15 2011-11-07 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
KR101034054B1 (ko) * 2009-10-22 2011-05-12 엘지이노텍 주식회사 발광소자 패키지 및 그 제조방법
TW201128812A (en) 2009-12-01 2011-08-16 Lg Innotek Co Ltd Light emitting device
DE102009058421A1 (de) 2009-12-16 2011-06-22 OSRAM Opto Semiconductors GmbH, 93055 Verfahren zur Herstellung eines Gehäuses für ein optoelektronisches Halbleiterbauteil, Gehäuse und optoelektronisches Halbleiterbauteil
US9468070B2 (en) 2010-02-16 2016-10-11 Cree Inc. Color control of light emitting devices and applications thereof
US9012938B2 (en) 2010-04-09 2015-04-21 Cree, Inc. High reflective substrate of light emitting devices with improved light output
JP2011249768A (ja) * 2010-04-27 2011-12-08 Mitsubishi Chemicals Corp 半導体発光素子支持部材及び半導体発光装置
JP5528900B2 (ja) * 2010-04-30 2014-06-25 ローム株式会社 発光素子モジュール
JP5535750B2 (ja) * 2010-04-30 2014-07-02 ローム株式会社 発光素子モジュール
WO2011136356A1 (ja) * 2010-04-30 2011-11-03 ローム株式会社 Ｌｅｄモジュール
KR101676670B1 (ko) * 2010-07-01 2016-11-16 엘지이노텍 주식회사 발광 소자
KR101705700B1 (ko) 2010-07-01 2017-02-10 엘지이노텍 주식회사 발광 소자
US9831393B2 (en) * 2010-07-30 2017-11-28 Cree Hong Kong Limited Water resistant surface mount device package
JP5778999B2 (ja) * 2010-08-06 2015-09-16 日亜化学工業株式会社 発光装置および画像表示ユニット
KR101114719B1 (ko) * 2010-08-09 2012-02-29 엘지이노텍 주식회사 발광 소자 및 이를 구비한 조명 시스템
MY170920A (en) 2010-11-02 2019-09-17 Carsem M Sdn Bhd Leadframe package with recessed cavity for led
KR101761637B1 (ko) * 2010-11-24 2017-07-27 삼성전자주식회사 발광 다이오드 패키지 및 그의 제조 방법
KR20120093679A (ko) * 2011-02-15 2012-08-23 삼성전자주식회사 발광소자 패키지 및 그 제조방법
DE102011100028A1 (de) 2011-04-29 2012-10-31 Osram Opto Semiconductors Gmbh Bauelement und Verfahren zur Herstellung eines Bauelements
CN103000794B (zh) * 2011-09-14 2015-06-10 展晶科技(深圳)有限公司 Led封装结构
DE102011116534B4 (de) 2011-10-20 2022-06-23 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierendes Bauelement
MY156107A (en) 2011-11-01 2016-01-15 Carsem M Sdn Bhd Large panel leadframe
KR101294488B1 (ko) 2011-11-14 2013-08-07 엘지이노텍 주식회사 발광장치
US8564004B2 (en) 2011-11-29 2013-10-22 Cree, Inc. Complex primary optics with intermediate elements
CN103378275A (zh) * 2012-04-27 2013-10-30 展晶科技(深圳)有限公司 发光二极管封装结构
JP2013251422A (ja) * 2012-06-01 2013-12-12 Apic Yamada Corp Ｌｅｄチップ実装用基板、ｌｅｄパッケージ、金型、並びに、ｌｅｄチップ実装用基板及びｌｅｄパッケージの製造方法
DE102012215449A1 (de) * 2012-08-31 2014-03-27 Osram Opto Semiconductors Gmbh Gehäuse für ein elektronisches bauelement, elektronische baugruppe, verfahren zum herstellen eines gehäuses für ein elektronisches bauelement und verfahren zum herstellen einer elektronischen baugruppe
DE102013202910A1 (de) 2013-02-22 2014-09-25 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zu seiner Herstellung
US9711489B2 (en) 2013-05-29 2017-07-18 Cree Huizhou Solid State Lighting Company Limited Multiple pixel surface mount device package
CN104241262B (zh) 2013-06-14 2020-11-06 惠州科锐半导体照明有限公司 发光装置以及显示装置
DE102013213073A1 (de) * 2013-07-04 2015-01-08 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines optoelektronischen Bauelementes
US9129951B2 (en) * 2013-10-17 2015-09-08 Freescale Semiconductor, Inc. Coated lead frame bond finger
KR102235258B1 (ko) * 2014-02-04 2021-04-05 삼성디스플레이 주식회사 발광 다이오드 패키지 및 이를 포함하는 백라이트 유닛
JP5796649B2 (ja) * 2014-03-06 2015-10-21 日亜化学工業株式会社 光半導体装置及びその製造方法
JP6163131B2 (ja) * 2014-04-14 2017-07-12 日立化成株式会社 光反射用熱硬化性樹脂組成物、ならびにこれを用いた光半導体搭載用基板とその製造方法および光半導体装置。
JP6471416B2 (ja) * 2014-04-23 2019-02-20 株式会社カネカ 光半導体装置用樹脂成形体、光半導体パッケージ及び光半導体装置
US9601670B2 (en) 2014-07-11 2017-03-21 Cree, Inc. Method to form primary optic with variable shapes and/or geometries without a substrate
JP6532200B2 (ja) 2014-09-04 2019-06-19 日亜化学工業株式会社 パッケージ及びそれを用いた発光装置
US10622522B2 (en) 2014-09-05 2020-04-14 Theodore Lowes LED packages with chips having insulated surfaces
DE102014117435A1 (de) * 2014-11-27 2016-06-02 Osram Opto Semiconductors Gmbh Bauteil mit Leiterrahmenabschnitt
JP2015133524A (ja) * 2015-04-23 2015-07-23 日亜化学工業株式会社 光半導体装置及びその製造方法
JP6206442B2 (ja) * 2015-04-30 2017-10-04 日亜化学工業株式会社 パッケージ及びその製造方法、並びに発光装置
JP2017046014A (ja) * 2016-12-01 2017-03-02 日亜化学工業株式会社 光半導体装置
JP2017076809A (ja) * 2016-12-05 2017-04-20 大日本印刷株式会社 樹脂付リードフレーム、半導体装置、照明装置
US10153416B1 (en) * 2017-05-23 2018-12-11 Radiant Choice Limited Package body and light emitting device using same
WO2019045506A1 (ko) * 2017-09-01 2019-03-07 엘지이노텍 주식회사 발광소자 패키지 및 광원 장치
JP6879262B2 (ja) * 2018-05-08 2021-06-02 日亜化学工業株式会社 発光装置
JP6669217B2 (ja) * 2018-08-30 2020-03-18 日亜化学工業株式会社 パッケージ及びそれを用いた発光装置
CN110875408A (zh) * 2018-08-30 2020-03-10 深圳市聚飞光电股份有限公司 高强度led支架、led及发光装置
DE102018124528A1 (de) * 2018-10-04 2020-04-09 Osram Opto Semiconductors Gmbh Optoelektronische Leuchtvorrichtung, Trägerplatte und Verfahren zur Herstellung einer optoelektronischen Leuchtvorrichtungen

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4760440A (en) * 1983-10-31 1988-07-26 General Electric Company Package for solid state image sensors
JPS62224986A (ja) 1986-03-27 1987-10-02 Toyoda Gosei Co Ltd Ｌｅｄランプおよびその製造方法
US5126511A (en) * 1989-06-13 1992-06-30 Texas Instruments Incorporated Copper cored enclosures for hybrid circuits
US5296724A (en) * 1990-04-27 1994-03-22 Omron Corporation Light emitting semiconductor device having an optical element
JP2921029B2 (ja) 1990-05-18 1999-07-19 日本電気株式会社 位相変調回路
US5266817A (en) * 1992-05-18 1993-11-30 Lin Paul Y S Package structure of multi-chip light emitting diode
US5534725A (en) * 1992-06-16 1996-07-09 Goldstar Electron Co., Ltd. Resin molded charge coupled device package and method for preparation thereof
US5438216A (en) * 1992-08-31 1995-08-01 Motorola, Inc. Light erasable multichip module
DE4311530A1 (de) * 1992-10-02 1994-04-07 Telefunken Microelectron Optoelektronisches Bauelement mit engem Öffnungswinkel
JP3161142B2 (ja) * 1993-03-26 2001-04-25 ソニー株式会社 半導体装置
US5748658A (en) * 1993-10-22 1998-05-05 Matsushita Electric Industrial Co., Ltd. Semiconductor laser device and optical pickup head
JP3256769B2 (ja) 1993-12-28 2002-02-12 日本電信電話株式会社 埋め込み構造半導体レーザの製造方法
US5686698A (en) * 1994-06-30 1997-11-11 Motorola, Inc. Package for electrical components having a molded structure with a port extending into the molded structure
US5545913A (en) * 1994-10-17 1996-08-13 Xerox Corporation Assembly for mounting semiconductor chips in a full-width-array image scanner
US5486946A (en) * 1994-12-21 1996-01-23 Motorola Integrated electro-optic package for reflective spatial light modulators
JPH08204059A (ja) * 1995-01-20 1996-08-09 Kyocera Corp 半導体素子収納用パッケージ
DE19535777A1 (de) 1995-09-26 1997-03-27 Siemens Ag Optoelektronisches Halbleiter-Bauelement und Verfahren zur Herstellung
DE19549818B4 (de) 1995-09-29 2010-03-18 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiter-Bauelement
DE19536454B4 (de) * 1995-09-29 2006-03-09 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiter-Bauelement
US5877546A (en) * 1996-01-02 1999-03-02 Lg Semicon Co., Ltd. Semiconductor package with transparent window and fabrication method thereof
US6011294A (en) * 1996-04-08 2000-01-04 Eastman Kodak Company Low cost CCD packaging
DE19625622A1 (de) * 1996-06-26 1998-01-02 Siemens Ag Lichtabstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement
DE19638667C2 (de) 1996-09-20 2001-05-17 Osram Opto Semiconductors Gmbh Mischfarbiges Licht abstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement
US5925898A (en) * 1996-07-18 1999-07-20 Siemens Aktiengesellschaft Optoelectronic transducer and production methods
US6170963B1 (en) * 1998-03-30 2001-01-09 Eastman Kodak Company Light source
US6075237A (en) * 1998-07-29 2000-06-13 Eastman Kodak Company Image sensor cover with integral light shield
US6173963B1 (en) * 1999-05-11 2001-01-16 Basso Industry Corp. Sealing assembly for an inlet valve of a power nailer

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8110437B2 (en) 2002-05-16 2012-02-07 Osram Opto Semiconductors Gmbh Method for attaching a semiconductor chip in a plastic encapsulant, optoelectronic semiconductor component and method for the production thereof
CN102522485B (zh) * 2008-02-06 2015-04-15 夏普株式会社 半导体发光装置
CN102522485A (zh) * 2008-02-06 2012-06-27 夏普株式会社 半导体发光装置
US8981238B2 (en) 2009-07-08 2015-03-17 Osram Opto Semiconductor Gmbh Electronic device
CN102484949A (zh) * 2009-07-08 2012-05-30 奥斯兰姆奥普托半导体有限责任公司 电子组件
CN102484949B (zh) * 2009-07-08 2016-05-25 奥斯兰姆奥普托半导体有限责任公司 电子组件
US9307647B2 (en) 2009-07-08 2016-04-05 Osram Opto Semiconductors Gmbh Electronic device
CN102064246A (zh) * 2009-11-17 2011-05-18 斯坦雷电气株式会社 发光装置及其制造方法
CN102064246B (zh) * 2009-11-17 2016-02-17 斯坦雷电气株式会社 发光装置的制造方法
CN102201525B (zh) * 2010-03-25 2014-04-02 Lg伊诺特有限公司 发光器件封装及具有该发光器件封装的照明系统
CN102201525A (zh) * 2010-03-25 2011-09-28 Lg伊诺特有限公司 发光器件封装及具有该发光器件封装的照明系统
CN102214648A (zh) * 2010-04-01 2011-10-12 Lg伊诺特有限公司 发光器件封装和照明系统
CN105702842A (zh) * 2010-09-22 2016-06-22 奥斯兰姆奥普托半导体有限责任公司 光电子半导体器件
CN105702842B (zh) * 2010-09-22 2018-04-24 奥斯兰姆奥普托半导体有限责任公司 光电子半导体器件
CN103392242A (zh) * 2011-02-28 2013-11-13 日亚化学工业株式会社 发光装置
US9341353B2 (en) 2011-02-28 2016-05-17 Nichia Corporation Light emitting device
TWI552374B (zh) * 2011-02-28 2016-10-01 Nichia Corp 發光裝置
CN103392242B (zh) * 2011-02-28 2017-02-22 日亚化学工业株式会社 发光装置
CN102412362A (zh) * 2011-10-22 2012-04-11 浙江英特来光电科技有限公司 一种加透镜的全户外led灯
CN104247057A (zh) * 2012-02-27 2014-12-24 Lg伊诺特有限公司 发光器件封装
CN107946377A (zh) * 2017-11-22 2018-04-20 深圳成光兴光电技术股份有限公司 一种贴片式红外线接收管

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US7138301B2 (en) 2006-11-21
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