CN1286154C - 除去有机薄膜的方法和设备 - Google Patents

除去有机薄膜的方法和设备 Download PDF

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Publication number
CN1286154C
CN1286154C CNB021471231A CN02147123A CN1286154C CN 1286154 C CN1286154 C CN 1286154C CN B021471231 A CNB021471231 A CN B021471231A CN 02147123 A CN02147123 A CN 02147123A CN 1286154 C CN1286154 C CN 1286154C
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CN
China
Prior art keywords
liquid
ozone
treatment
treatment liquid
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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CNB021471231A
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English (en)
Chinese (zh)
Other versions
CN1414610A (zh
Inventor
村冈久志
村冈里江子
佐藤飞鸟
远藤满
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ums Co ltd
Nomura Micro Science Co Ltd
Original Assignee
Purex Co Ltd
UMS Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Purex Co Ltd, UMS Co Ltd filed Critical Purex Co Ltd
Publication of CN1414610A publication Critical patent/CN1414610A/zh
Application granted granted Critical
Publication of CN1286154C publication Critical patent/CN1286154C/zh
Anticipated expiration legal-status Critical
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/61—Electrolytic etching
    • H10P50/613—Electrolytic etching of Group IV materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02—Cleaning by the force of jets or sprays
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D9/00—Chemical paint or ink removers
    • C09D9/005—Chemical paint or ink removers containing organic solvents
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/266—Esters or carbonates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B2203/00—Details of cleaning machines or methods involving the use or presence of liquid or steam
    • B08B2203/005—Details of cleaning machines or methods involving the use or presence of liquid or steam the liquid being ozonated
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Emergency Medicine (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Liquid Crystal (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Drying Of Semiconductors (AREA)
  • Weting (AREA)
CNB021471231A 2001-10-23 2002-10-22 除去有机薄膜的方法和设备 Expired - Lifetime CN1286154C (zh)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
JP325516/01 2001-10-23
JP325516/2001 2001-10-23
JP2001325516 2001-10-23
JP61096/02 2002-03-06
JP61096/2002 2002-03-06
JP2002061096 2002-03-06
JP229394/02 2002-08-07
JP2002229394A JP3914842B2 (ja) 2001-10-23 2002-08-07 有機被膜の除去方法および除去装置
JP229394/2002 2002-08-07

Publications (2)

Publication Number Publication Date
CN1414610A CN1414610A (zh) 2003-04-30
CN1286154C true CN1286154C (zh) 2006-11-22

Family

ID=27347717

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB021471231A Expired - Lifetime CN1286154C (zh) 2001-10-23 2002-10-22 除去有机薄膜的方法和设备

Country Status (5)

Country Link
US (2) US6696228B2 (https=)
JP (1) JP3914842B2 (https=)
KR (2) KR100882988B1 (https=)
CN (1) CN1286154C (https=)
TW (1) TW584893B (https=)

Families Citing this family (85)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2003268622A1 (en) * 2002-09-06 2004-03-29 Basf Corporation Method of removing coatings from plastic articles
KR100951898B1 (ko) * 2002-12-09 2010-04-09 삼성전자주식회사 포토레지스트 제거용 스트리핑 조성물 및 이를 사용한액정 표시 장치의 박막 트랜지스터 기판의 제조방법
US20080140379A1 (en) * 2003-05-22 2008-06-12 Xoomsys, Inc. Approximations for simulations of systems
US7253092B2 (en) * 2003-06-24 2007-08-07 Nec Electronics America, Inc. Tungsten plug corrosion prevention method using water
JP4397646B2 (ja) * 2003-07-30 2010-01-13 東京エレクトロン株式会社 基板処理装置および基板処理方法
US6977215B2 (en) * 2003-10-28 2005-12-20 Nec Electronics America, Inc. Tungsten plug corrosion prevention method using gas sparged water
US7052992B2 (en) * 2003-10-28 2006-05-30 Nec Electronics America, Inc. Tungsten plug corrosion prevention method using ionized air
DE10351689A1 (de) * 2003-11-06 2005-06-16 Khs Maschinen- Und Anlagenbau Ag Verfahren zum Betreiben einer Pasteurisierungsanlage
US7202175B2 (en) * 2003-11-07 2007-04-10 Industrial Technology Research Institute Method and apparatus for treating a substrate surface by bubbling
JP2005169287A (ja) * 2003-12-11 2005-06-30 Nomura Micro Sci Co Ltd 有機被膜洗浄液の再生装置及び再生方法並びに有機被膜の洗浄装置及び洗浄方法
JP2005236083A (ja) * 2004-02-20 2005-09-02 Toshiba Corp 半導体装置の製造方法
CN100397155C (zh) * 2004-06-11 2008-06-25 鸿富锦精密工业（深圳）有限公司 基板处理装置及处理方法
KR20050120914A (ko) * 2004-06-21 2005-12-26 주식회사 동진쎄미켐 레지스트 제거용 조성물
JP2006019575A (ja) 2004-07-02 2006-01-19 Sharp Corp フォトレジストの現像方法及び現像装置
JP4321815B2 (ja) * 2004-07-30 2009-08-26 富士フイルム株式会社 感光材料処理装置
US7235479B2 (en) * 2004-08-26 2007-06-26 Applied Materials, Inc. Organic solvents having ozone dissolved therein for semiconductor processing utilizing sacrificial materials
US7632756B2 (en) * 2004-08-26 2009-12-15 Applied Materials, Inc. Semiconductor processing using energized hydrogen gas and in combination with wet cleaning
WO2006029160A2 (en) * 2004-09-07 2006-03-16 Phifer-Smith Corporation Copper processing using an ozone-solvent solution
US8603258B2 (en) 2004-09-14 2013-12-10 Church & Dwight Co., Inc. Paint and ink remover two-phase system
JP4883975B2 (ja) * 2004-10-19 2012-02-22 株式会社レナテック 基体表面上の付着物の除去方法、除去用処理液および除去装置
KR100625486B1 (ko) * 2004-11-04 2006-09-20 주식회사 디엠에스 평판 디스플레이용 기판처리장치 및 기판처리방법
JP4503426B2 (ja) * 2004-11-30 2010-07-14 野村マイクロ・サイエンス株式会社 洗浄装置
JP2006173211A (ja) * 2004-12-13 2006-06-29 Sekisui Chem Co Ltd レジスト除去方法及びレジスト除去装置
JP2006310767A (ja) * 2005-03-28 2006-11-09 Dainippon Screen Mfg Co Ltd 基板処理装置
KR100690347B1 (ko) * 2005-04-09 2007-03-09 주식회사 엘지화학 박리액 조성물, 이를 이용한 박리 방법 및 그 박리 장치
JPWO2006137194A1 (ja) * 2005-06-22 2009-01-08 東亞合成株式会社 基体表面上の有機被膜の除去方法および除去装置
KR20080024485A (ko) * 2005-07-05 2008-03-18 도아고세이가부시키가이샤 박리액 중의 유기물 농도를 관리한 기체의 제조 방법
JP4413831B2 (ja) * 2005-08-11 2010-02-10 株式会社日立ハイテクノロジーズ ウェハ表面検査装置及びウェハ表面検査方法
US20070095366A1 (en) * 2005-11-02 2007-05-03 Applied Materials, Inc. Stripping and cleaning of organic-containing materials from electronic device substrate surfaces
US7402213B2 (en) * 2006-02-03 2008-07-22 Applied Materials, Inc. Stripping and removal of organic-containing materials from electronic device substrate surfaces
US20070261718A1 (en) * 2006-05-10 2007-11-15 Rubinder Randhawa Method and apparatus for ozone-enhanced cleaning of flat objects with pulsed liquid jet
KR100801149B1 (ko) * 2006-05-18 2008-02-11 (주)엠아이반도체 패키지된 반도체 및 전자부품의 몰딩 수지 제거장치
CN1888878B (zh) * 2006-07-14 2012-05-30 沪东中华造船(集团)有限公司 不燃型着色探伤清洗液及其制备方法
EP1903400A1 (en) * 2006-09-20 2008-03-26 Interuniversitair Microelektronica Centrum A method to remove resist layers from a substrate
US20080076689A1 (en) * 2006-09-27 2008-03-27 Matthews Robert R System using ozonated acetic anhydride to remove photoresist materials
KR101294019B1 (ko) * 2007-02-20 2013-08-16 주식회사 동진쎄미켐 포토레지스트 제거 조성물 및 이를 이용한 포토레지스트제거방법
WO2008105108A1 (ja) * 2007-02-27 2008-09-04 Shigenori Aono 漂白繊維品の製法およびそれに用いる装置、並びにそれによって得られる漂白繊維品
TWI406111B (zh) * 2007-05-23 2013-08-21 Meidensha Electric Mfg Co Ltd Method for removing resist and device thereof
JP4952375B2 (ja) * 2007-05-23 2012-06-13 株式会社明電舎 レジスト除去方法及びその装置
JP4905253B2 (ja) * 2007-05-23 2012-03-28 株式会社明電舎 レジスト除去方法及びその装置
JP2009049300A (ja) * 2007-08-22 2009-03-05 Toshiba Corp 半導体記憶装置の製造方法
JP2009076638A (ja) * 2007-09-20 2009-04-09 Toshiba Corp 半導体装置の製造方法
US7767586B2 (en) * 2007-10-29 2010-08-03 Applied Materials, Inc. Methods for forming connective elements on integrated circuits for packaging applications
US7749327B2 (en) * 2007-11-01 2010-07-06 Micron Technology, Inc. Methods for treating surfaces
KR101214643B1 (ko) 2007-12-04 2012-12-21 메이덴샤 코포레이션 레지스트 제거방법 및 그를 위한 장치
US8614053B2 (en) * 2009-03-27 2013-12-24 Eastman Chemical Company Processess and compositions for removing substances from substrates
US8309502B2 (en) * 2009-03-27 2012-11-13 Eastman Chemical Company Compositions and methods for removing organic substances
US8444768B2 (en) * 2009-03-27 2013-05-21 Eastman Chemical Company Compositions and methods for removing organic substances
US8691056B2 (en) * 2009-04-17 2014-04-08 Distillation Technologies, Inc. Method and apparatus for separating fluid mixtures
JP5278247B2 (ja) * 2009-08-28 2013-09-04 旭硝子株式会社 ガラス基板用スペーサ分離装置及びガラス基板の製造方法
CN102024675B (zh) * 2009-11-20 2012-09-05 沈阳芯源微电子设备有限公司 多种化学品分类排放回收系统
JP2011192885A (ja) * 2010-03-16 2011-09-29 Toshiba Corp 半導体基板の洗浄方法
JP5470186B2 (ja) * 2010-07-30 2014-04-16 日本発條株式会社 被検査物の清浄度検査装置と、清浄度検査方法
JP2012109290A (ja) 2010-11-15 2012-06-07 Kurita Water Ind Ltd シリコンウェハ清浄化方法及びシリコンウェハ清浄化装置
US8709165B2 (en) 2010-12-03 2014-04-29 Lam Research Ag Method and apparatus for surface treatment using inorganic acid and ozone
TWI480937B (zh) 2011-01-06 2015-04-11 斯克林集團公司 基板處理方法及基板處理裝置
SE537311C2 (sv) * 2011-11-16 2015-04-07 Observe Medical Aps Anording och metod för detektering av en mätkammares ytdegenerering under mätning av urinproduktion
US9170496B2 (en) * 2011-11-30 2015-10-27 Taiwan Semiconductor Manufacturing Company, Ltd. Method of pre-treating a wafer surface before applying a solvent-containing material thereon
CA3085086C (en) 2011-12-06 2023-08-08 Delta Faucet Company Ozone distribution in a faucet
US20130260569A1 (en) * 2012-03-30 2013-10-03 Lam Research Ag Apparatus and method for liquid treatment of wafer-shaped articles
JP5437541B1 (ja) 2012-06-26 2014-03-12 野村マイクロ・サイエンス株式会社 レジスト剥離剤
US9011611B2 (en) * 2012-07-02 2015-04-21 Fuji Xerox Co., Ltd. Cleaning apparatus and cleaning method
US9875916B2 (en) 2012-07-09 2018-01-23 Tokyo Electron Limited Method of stripping photoresist on a single substrate system
US8871108B2 (en) * 2013-01-22 2014-10-28 Tel Fsi, Inc. Process for removing carbon material from substrates
CN103324038A (zh) * 2013-06-25 2013-09-25 京东方科技集团股份有限公司 一种显影装置及显影方法
US9562291B2 (en) * 2014-01-14 2017-02-07 Mei, Llc Metal etch system
JP6289318B2 (ja) * 2014-09-08 2018-03-07 東京エレクトロン株式会社 現像方法、現像装置及び記憶媒体
ES2706877T3 (es) 2014-11-13 2019-04-01 Gerresheimer Glas Gmbh Filtro de partículas de máquina para conformar vidrio, unidad de émbolo, cabeza de soplado, soporte de cabeza de soplado y máquina para conformar vidrio adaptada a dicho filtro o que lo comprende
KR101847086B1 (ko) * 2014-11-18 2018-04-10 주식회사 엘지화학 포토레지스트 박리 장치 및 이를 이용한 포토레지스트 박리 방법
CN104409398A (zh) * 2014-12-02 2015-03-11 昆山国显光电有限公司 刻蚀装置
KR101776017B1 (ko) * 2015-10-27 2017-09-07 세메스 주식회사 용존 오존 제거 유닛 및 이를 포함하는 기판 처리 장치, 용존 오존 제거 방법, 기판 세정 방법
CN108463437B (zh) 2015-12-21 2022-07-08 德尔塔阀门公司 包括消毒装置的流体输送系统
JP6439766B2 (ja) * 2016-09-23 2018-12-19 東京エレクトロン株式会社 塗布、現像方法及び塗布、現像装置
DK179314B1 (en) * 2017-02-08 2018-04-30 Steeper Energy Aps Pressurization system for high pressure treatment system
JP2019126746A (ja) * 2018-01-22 2019-08-01 株式会社ディスコ 加工装置
CN108831995B (zh) * 2018-06-08 2022-07-29 东君新能源有限公司 一种柔性组件中有机层的分离方法
US10663865B2 (en) * 2018-06-29 2020-05-26 Taiwan Semiconductor Manufacturing Co., Ltd. Photoresist recycling apparatus
KR102121237B1 (ko) * 2018-12-06 2020-06-10 세메스 주식회사 기판 처리 장치 및 방법
JP7314634B2 (ja) * 2019-06-11 2023-07-26 東京エレクトロン株式会社 塗布装置及び塗布方法
WO2022221641A1 (en) * 2021-04-15 2022-10-20 Zep Ip Holding Llc System and method for assessing cleanliness
CN113600541B (zh) * 2021-08-19 2022-06-21 富兰克科技（深圳）股份有限公司 一种低排放环保单工位智能水油通用清洗机
CN113917806A (zh) * 2021-10-15 2022-01-11 广州奥松电子股份有限公司 光刻胶清洗装置及其清洗方法
CN113959045A (zh) * 2021-10-27 2022-01-21 杭州树派环保科技有限公司 室内空气治理用除异味的装置及除异味装置用自清洁装置
US12138745B2 (en) 2023-03-22 2024-11-12 Yield Engineering Systems, Inc. Apparatus and method for coating removal
CN117181694B (zh) * 2023-05-31 2025-11-04 安徽富乐德科技发展股份有限公司 一种Faceplate部件清洗装置及清洗药水配方

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5690747A (en) * 1988-05-20 1997-11-25 The Boeing Company Method for removing photoresist with solvent and ultrasonic agitation
US5350489A (en) 1990-10-19 1994-09-27 Purex Co., Ltd. Treatment method of cleaning surface of plastic molded item
US6007970A (en) * 1992-02-07 1999-12-28 Canon Kabushiki Kaisha Lithographic developer containing surfactant
JP3150509B2 (ja) * 1992-11-27 2001-03-26 株式会社日立製作所 有機物除去方法及びその方法を使用するための装置
KR970053127A (ko) * 1995-12-30 1997-07-29 김주용 반도체 기판의 세정방법
US6277753B1 (en) * 1998-09-28 2001-08-21 Supercritical Systems Inc. Removal of CMP residue from semiconductors using supercritical carbon dioxide process
JP3728945B2 (ja) 1998-10-30 2005-12-21 オルガノ株式会社 フォトレジスト現像廃液からの現像液の回収再利用方法及び装置
JP3869566B2 (ja) * 1998-11-13 2007-01-17 三菱電機株式会社 フォトレジスト膜除去方法および装置
US6758938B1 (en) * 1999-08-31 2004-07-06 Micron Technology, Inc. Delivery of dissolved ozone
JP2001194806A (ja) * 1999-10-25 2001-07-19 Toray Ind Inc レジスト剥離方法
US6372700B1 (en) * 2000-03-31 2002-04-16 3M Innovative Properties Company Fluorinated solvent compositions containing ozone
JP4695026B2 (ja) * 2006-06-20 2011-06-08 ヤンマー株式会社 コンバイン

Also Published As

Publication number Publication date
JP2003330206A (ja) 2003-11-19
CN1414610A (zh) 2003-04-30
US20040076912A1 (en) 2004-04-22
US20030108823A1 (en) 2003-06-12
JP3914842B2 (ja) 2007-05-16
US6696228B2 (en) 2004-02-24
KR100882988B1 (ko) 2009-02-12
KR20050115844A (ko) 2005-12-08
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