CN101307460A - 清洗方法及制造电子器件的方法 - Google Patents
清洗方法及制造电子器件的方法 Download PDFInfo
- Publication number
- CN101307460A CN101307460A CNA2008100097548A CN200810009754A CN101307460A CN 101307460 A CN101307460 A CN 101307460A CN A2008100097548 A CNA2008100097548 A CN A2008100097548A CN 200810009754 A CN200810009754 A CN 200810009754A CN 101307460 A CN101307460 A CN 101307460A
- Authority
- CN
- China
- Prior art keywords
- oxidizing solution
- workpiece
- purging method
- superoxol
- resist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
Abstract
Description
Claims (21)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP031286/2007 | 2007-02-09 | ||
JP2007031286A JP5148889B2 (ja) | 2007-02-09 | 2007-02-09 | 洗浄方法及び電子デバイスの製造方法 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201110066173.XA Division CN102157370B (zh) | 2007-02-09 | 2008-02-13 | 清洗方法及制造电子器件的方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101307460A true CN101307460A (zh) | 2008-11-19 |
CN101307460B CN101307460B (zh) | 2011-05-18 |
Family
ID=39705612
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2008100097548A Active CN101307460B (zh) | 2007-02-09 | 2008-02-13 | 清洗方法及制造电子器件的方法 |
CN201110066173.XA Active CN102157370B (zh) | 2007-02-09 | 2008-02-13 | 清洗方法及制造电子器件的方法 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201110066173.XA Active CN102157370B (zh) | 2007-02-09 | 2008-02-13 | 清洗方法及制造电子器件的方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8454754B2 (zh) |
JP (1) | JP5148889B2 (zh) |
KR (1) | KR100959205B1 (zh) |
CN (2) | CN101307460B (zh) |
TW (1) | TWI394206B (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102844845A (zh) * | 2010-03-15 | 2012-12-26 | 栗田工业株式会社 | 电子材料的清洗方法和清洗系统 |
CN103380232A (zh) * | 2010-12-21 | 2013-10-30 | 氯工程公司 | 导电性金刚石电极、使用其的硫酸电解方法及硫酸电解装置 |
CN103765561A (zh) * | 2011-07-11 | 2014-04-30 | 栗田工业株式会社 | 金属栅极半导体的清洗方法 |
CN104992904A (zh) * | 2013-09-02 | 2015-10-21 | 斯克林集团公司 | 基板处理方法以及基板处理装置 |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5148576B2 (ja) | 2009-09-25 | 2013-02-20 | 株式会社東芝 | 洗浄方法 |
JP5106523B2 (ja) * | 2009-12-16 | 2012-12-26 | 株式会社東芝 | エッチング処理方法、微細構造体の製造方法、およびエッチング処理装置 |
CN102473425B (zh) * | 2010-03-31 | 2016-03-16 | Hoya株式会社 | 磁盘用玻璃基板的制造方法 |
WO2013086217A1 (en) | 2011-12-06 | 2013-06-13 | Masco Corporation Of Indiana | Ozone distribution in a faucet |
JP6168271B2 (ja) * | 2012-08-08 | 2017-07-26 | 株式会社Screenホールディングス | 基板処理装置および基板処理方法 |
JP6191954B2 (ja) * | 2013-09-02 | 2017-09-06 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
US9406749B2 (en) * | 2014-10-02 | 2016-08-02 | Taiwan Semiconductor Manufacturing Company Limited | Method of manufacturing a horizontal gate-all-around transistor having a fin |
WO2017112795A1 (en) | 2015-12-21 | 2017-06-29 | Delta Faucet Company | Fluid delivery system including a disinfectant device |
WO2019239970A1 (ja) * | 2018-06-13 | 2019-12-19 | 東京エレクトロン株式会社 | 基板処理方法および基板処理装置 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5651860A (en) * | 1996-03-06 | 1997-07-29 | Micron Technology, Inc. | Ion-implanted resist removal method |
JPH11293288A (ja) * | 1998-04-08 | 1999-10-26 | Kurita Water Ind Ltd | 電子材料用洗浄水及び電子材料用洗浄液 |
US20050139487A1 (en) * | 2003-05-02 | 2005-06-30 | Fraunhofer-Gesellschaft Zur Forderung Der Angewandten Forschung E.V. | Method for the oxidative treatment of components comprised of or containing elementary silicon and/or substantially inorganic silicon compounds |
JP2005183937A (ja) | 2003-11-25 | 2005-07-07 | Nec Electronics Corp | 半導体装置の製造方法およびレジスト除去用洗浄装置 |
JP4462146B2 (ja) * | 2004-09-17 | 2010-05-12 | 栗田工業株式会社 | 硫酸リサイクル型洗浄システムおよび硫酸リサイクル型過硫酸供給装置 |
JP2006108304A (ja) * | 2004-10-04 | 2006-04-20 | Nec Electronics Corp | 基板処理装置 |
JP4862981B2 (ja) | 2004-10-18 | 2012-01-25 | 栗田工業株式会社 | 硫酸リサイクル型洗浄システムおよびその運転方法 |
-
2007
- 2007-02-09 JP JP2007031286A patent/JP5148889B2/ja active Active
-
2008
- 2008-02-05 TW TW097104727A patent/TWI394206B/zh active
- 2008-02-05 KR KR1020080011944A patent/KR100959205B1/ko active IP Right Grant
- 2008-02-08 US US12/028,288 patent/US8454754B2/en active Active
- 2008-02-13 CN CN2008100097548A patent/CN101307460B/zh active Active
- 2008-02-13 CN CN201110066173.XA patent/CN102157370B/zh active Active
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102844845A (zh) * | 2010-03-15 | 2012-12-26 | 栗田工业株式会社 | 电子材料的清洗方法和清洗系统 |
CN102844845B (zh) * | 2010-03-15 | 2015-12-02 | 栗田工业株式会社 | 电子材料的清洗方法和清洗系统 |
CN103380232A (zh) * | 2010-12-21 | 2013-10-30 | 氯工程公司 | 导电性金刚石电极、使用其的硫酸电解方法及硫酸电解装置 |
CN103765561A (zh) * | 2011-07-11 | 2014-04-30 | 栗田工业株式会社 | 金属栅极半导体的清洗方法 |
CN103765561B (zh) * | 2011-07-11 | 2017-02-15 | 栗田工业株式会社 | 金属栅极半导体的清洗方法 |
CN104992904A (zh) * | 2013-09-02 | 2015-10-21 | 斯克林集团公司 | 基板处理方法以及基板处理装置 |
CN104992904B (zh) * | 2013-09-02 | 2018-05-08 | 斯克林集团公司 | 基板处理方法以及基板处理装置 |
Also Published As
Publication number | Publication date |
---|---|
KR20080074792A (ko) | 2008-08-13 |
US8454754B2 (en) | 2013-06-04 |
CN102157370A (zh) | 2011-08-17 |
CN102157370B (zh) | 2014-07-02 |
US20080196743A1 (en) | 2008-08-21 |
TW200908117A (en) | 2009-02-16 |
TWI394206B (zh) | 2013-04-21 |
JP5148889B2 (ja) | 2013-02-20 |
JP2008198742A (ja) | 2008-08-28 |
KR100959205B1 (ko) | 2010-05-19 |
CN101307460B (zh) | 2011-05-18 |
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PB01 | Publication | ||
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: PERMELEC ELECTRODE LTD. TOSHIBA K.K. Free format text: FORMER OWNER: CHLORINE ENG CORP. LTD TOSHIBA K.K. Effective date: 20140508 |
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C41 | Transfer of patent application or patent right or utility model | ||
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Effective date of registration: 20140508 Address after: Kanagawa Patentee after: Shibaura Mechantronics Corp. Patentee after: Permelec Electrode Ltd. Patentee after: Toshiba Corp Address before: Kanagawa Patentee before: Shibaura Mechantronics Corp. Patentee before: Chlorine Eng Corp. Ltd Patentee before: Toshiba Corp |
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C56 | Change in the name or address of the patentee | ||
CP01 | Change in the name or title of a patent holder |
Address after: Kanagawa Patentee after: Shibaura Mechantronics Corp. Patentee after: DE NORA PERMELEC LTD Patentee after: Toshiba Corp Address before: Kanagawa Patentee before: Shibaura Mechantronics Corp. Patentee before: Permelec Electrode Ltd. Patentee before: Toshiba Corp |