CN1275802A - 半导体器件及其制造方法 - Google Patents
半导体器件及其制造方法 Download PDFInfo
- Publication number
- CN1275802A CN1275802A CN00107751A CN00107751A CN1275802A CN 1275802 A CN1275802 A CN 1275802A CN 00107751 A CN00107751 A CN 00107751A CN 00107751 A CN00107751 A CN 00107751A CN 1275802 A CN1275802 A CN 1275802A
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- crystal seed
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 61
- 238000000034 method Methods 0.000 title claims description 53
- 239000013078 crystal Substances 0.000 claims abstract description 106
- 230000004888 barrier function Effects 0.000 claims abstract description 79
- 230000012010 growth Effects 0.000 claims abstract description 20
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 15
- 238000009792 diffusion process Methods 0.000 claims abstract description 7
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 239000010949 copper Substances 0.000 claims description 58
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 48
- 229910052802 copper Inorganic materials 0.000 claims description 48
- 238000004519 manufacturing process Methods 0.000 claims description 26
- 238000009826 distribution Methods 0.000 claims description 22
- 238000005530 etching Methods 0.000 claims description 18
- 239000007788 liquid Substances 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 abstract description 28
- 239000002184 metal Substances 0.000 abstract description 28
- 238000009413 insulation Methods 0.000 abstract 2
- 239000010408 film Substances 0.000 description 9
- 238000005229 chemical vapour deposition Methods 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 7
- 238000005868 electrolysis reaction Methods 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 238000007747 plating Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000002245 particle Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 239000000654 additive Substances 0.000 description 3
- 230000000996 additive effect Effects 0.000 description 3
- 238000013508 migration Methods 0.000 description 3
- 230000005012 migration Effects 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- -1 aluminium copper silicon Chemical compound 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 239000004568 cement Substances 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910016570 AlCu Inorganic materials 0.000 description 1
- 229910000906 Bronze Inorganic materials 0.000 description 1
- 241001124569 Lycaenidae Species 0.000 description 1
- 101150064138 MAP1 gene Proteins 0.000 description 1
- BLOIXGFLXPCOGW-UHFFFAOYSA-N [Ti].[Sn] Chemical compound [Ti].[Sn] BLOIXGFLXPCOGW-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 235000014987 copper Nutrition 0.000 description 1
- 229910000365 copper sulfate Inorganic materials 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
- H01L21/76874—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for electroless plating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
- H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (24)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP146125/1999 | 1999-05-26 | ||
JP14612599A JP3358587B2 (ja) | 1999-05-26 | 1999-05-26 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1275802A true CN1275802A (zh) | 2000-12-06 |
CN1154171C CN1154171C (zh) | 2004-06-16 |
Family
ID=15400724
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB001077511A Expired - Fee Related CN1154171C (zh) | 1999-05-26 | 2000-05-25 | 半导体器件及其制造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US6342447B1 (zh) |
JP (1) | JP3358587B2 (zh) |
KR (1) | KR100369481B1 (zh) |
CN (1) | CN1154171C (zh) |
TW (1) | TW464941B (zh) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1261021A2 (en) * | 2001-05-21 | 2002-11-27 | Shinko Electric Industries Co. Ltd. | Method of production of circuit board, semiconductor device, and plating system |
CN102956546A (zh) * | 2011-08-30 | 2013-03-06 | 中芯国际集成电路制造(上海)有限公司 | 铜互连结构及其形成方法 |
CN103258789A (zh) * | 2013-04-17 | 2013-08-21 | 华中科技大学 | 一种通孔互联结构的制作方法及其产品 |
CN103325700A (zh) * | 2013-05-09 | 2013-09-25 | 华中科技大学 | 一种通过自底向上填充实现通孔互联的方法及其产品 |
CN104143527A (zh) * | 2013-05-09 | 2014-11-12 | 中芯国际集成电路制造(上海)有限公司 | 一种导电插塞和tsv的形成方法 |
CN106211605A (zh) * | 2010-12-02 | 2016-12-07 | 高通股份有限公司 | 用于特征镀敷的选择性晶种层处理 |
CN112435959A (zh) * | 2020-11-20 | 2021-03-02 | 长江存储科技有限责任公司 | 半导体器件及其制备方法 |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100404941B1 (ko) * | 2000-06-20 | 2003-11-07 | 주식회사 하이닉스반도체 | 반도체 소자의 금속 배선 형성방법 |
JP2002009149A (ja) * | 2000-06-20 | 2002-01-11 | Toshiba Corp | 半導体装置およびその製造方法 |
KR100407681B1 (ko) * | 2000-06-26 | 2003-12-01 | 주식회사 하이닉스반도체 | 반도체 소자의 금속배선 형성방법 |
KR100413794B1 (ko) * | 2001-03-08 | 2003-12-31 | 삼성전자주식회사 | 이종의 희생막 형성방법 |
US6534865B1 (en) * | 2001-06-12 | 2003-03-18 | Advanced Micro Devices, Inc. | Method of enhanced fill of vias and trenches |
US6861354B2 (en) * | 2002-02-04 | 2005-03-01 | Asm Nutool Inc | Method and structure to reduce defects in integrated circuits and substrates |
JP3556206B2 (ja) * | 2002-07-15 | 2004-08-18 | 沖電気工業株式会社 | 金属配線の形成方法 |
US7129165B2 (en) * | 2003-02-04 | 2006-10-31 | Asm Nutool, Inc. | Method and structure to improve reliability of copper interconnects |
KR101057692B1 (ko) * | 2003-12-05 | 2011-08-19 | 매그나칩 반도체 유한회사 | 반도체 소자의 트렌치 버텀 산화막 형성 방법 |
JP2012231096A (ja) * | 2011-04-27 | 2012-11-22 | Elpida Memory Inc | 半導体装置及びその製造方法 |
US8518818B2 (en) * | 2011-09-16 | 2013-08-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Reverse damascene process |
US8828863B1 (en) * | 2013-06-25 | 2014-09-09 | Lam Research Corporation | Electroless copper deposition with suppressor |
US20200135464A1 (en) * | 2018-10-30 | 2020-04-30 | Applied Materials, Inc. | Methods and apparatus for patterning substrates using asymmetric physical vapor deposition |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2734027B2 (ja) | 1988-11-25 | 1998-03-30 | ソニー株式会社 | 配線形成方法 |
JP2985204B2 (ja) * | 1990-01-22 | 1999-11-29 | ソニー株式会社 | 半導体装置の製造方法 |
JP2725944B2 (ja) | 1991-04-19 | 1998-03-11 | インターナショナル・ビジネス・マシーンズ・コーポレイション | 金属層堆積方法 |
JPH0799199A (ja) * | 1993-06-03 | 1995-04-11 | Nec Corp | 半導体装置の製造方法 |
JP3573218B2 (ja) | 1994-04-22 | 2004-10-06 | 株式会社アルバック | 薄膜製造方法 |
US5523259A (en) * | 1994-12-05 | 1996-06-04 | At&T Corp. | Method of forming metal layers formed as a composite of sub-layers using Ti texture control layer |
KR0147996B1 (ko) * | 1995-06-30 | 1998-10-15 | 배순훈 | 박막 헤드의 패턴 평탄화 방법 |
JP3517802B2 (ja) * | 1995-09-01 | 2004-04-12 | 富士通株式会社 | 埋め込み導電層の形成方法 |
US5656545A (en) * | 1996-02-26 | 1997-08-12 | Taiwan Semiconductor Manufacturing Company, Ltd | Elimination of tungsten dimple for stacked contact or via application |
US6063707A (en) * | 1996-10-11 | 2000-05-16 | California Institute Of Technology | Selective PVD growth of copper on patterned structures by selectively resputtering and sputtering areas of a substrate |
US6174806B1 (en) * | 1997-01-28 | 2001-01-16 | Micron Technology, Inc. | High pressure anneals of integrated circuit structures |
JP4355036B2 (ja) | 1997-03-18 | 2009-10-28 | キヤノンアネルバ株式会社 | イオン化スパッタリング装置 |
JP3540699B2 (ja) * | 1998-01-12 | 2004-07-07 | 松下電器産業株式会社 | 半導体装置の製造方法 |
US6284652B1 (en) * | 1998-07-01 | 2001-09-04 | Advanced Technology Materials, Inc. | Adhesion promotion method for electro-chemical copper metallization in IC applications |
JP4307592B2 (ja) * | 1998-07-07 | 2009-08-05 | Okiセミコンダクタ株式会社 | 半導体素子における配線形成方法 |
JP2000183064A (ja) * | 1998-12-16 | 2000-06-30 | Matsushita Electronics Industry Corp | 半導体装置およびその製造方法 |
JP2000208517A (ja) * | 1999-01-12 | 2000-07-28 | Fujitsu Ltd | 半導体装置の製造方法 |
US6135693A (en) * | 1999-03-23 | 2000-10-24 | Pivot Point, Inc. | Bow tie locking cotter |
US6194307B1 (en) * | 1999-04-26 | 2001-02-27 | Taiwan Semiconductor Manufacturing Company | Elimination of copper line damages for damascene process |
-
1999
- 1999-05-26 JP JP14612599A patent/JP3358587B2/ja not_active Expired - Fee Related
-
2000
- 2000-05-18 KR KR10-2000-0026648A patent/KR100369481B1/ko not_active IP Right Cessation
- 2000-05-24 TW TW089110102A patent/TW464941B/zh not_active IP Right Cessation
- 2000-05-25 CN CNB001077511A patent/CN1154171C/zh not_active Expired - Fee Related
- 2000-05-25 US US09/577,994 patent/US6342447B1/en not_active Expired - Fee Related
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1261021A2 (en) * | 2001-05-21 | 2002-11-27 | Shinko Electric Industries Co. Ltd. | Method of production of circuit board, semiconductor device, and plating system |
EP1261021A3 (en) * | 2001-05-21 | 2006-02-08 | Shinko Electric Industries Co. Ltd. | Method of production of circuit board, semiconductor device, and plating system |
US7114251B2 (en) | 2001-05-21 | 2006-10-03 | Shinko Electric Industries Co., Ltd. | Method of producing of circuit board; for semiconductor device |
CN106211605A (zh) * | 2010-12-02 | 2016-12-07 | 高通股份有限公司 | 用于特征镀敷的选择性晶种层处理 |
CN102956546A (zh) * | 2011-08-30 | 2013-03-06 | 中芯国际集成电路制造(上海)有限公司 | 铜互连结构及其形成方法 |
CN103258789A (zh) * | 2013-04-17 | 2013-08-21 | 华中科技大学 | 一种通孔互联结构的制作方法及其产品 |
CN103325700A (zh) * | 2013-05-09 | 2013-09-25 | 华中科技大学 | 一种通过自底向上填充实现通孔互联的方法及其产品 |
CN104143527A (zh) * | 2013-05-09 | 2014-11-12 | 中芯国际集成电路制造(上海)有限公司 | 一种导电插塞和tsv的形成方法 |
CN103325700B (zh) * | 2013-05-09 | 2015-11-18 | 华中科技大学 | 一种通过自底向上填充实现通孔互联的方法及其产品 |
CN112435959A (zh) * | 2020-11-20 | 2021-03-02 | 长江存储科技有限责任公司 | 半导体器件及其制备方法 |
Also Published As
Publication number | Publication date |
---|---|
TW464941B (en) | 2001-11-21 |
KR100369481B1 (ko) | 2003-01-29 |
KR20010014932A (ko) | 2001-02-26 |
US6342447B1 (en) | 2002-01-29 |
JP3358587B2 (ja) | 2002-12-24 |
CN1154171C (zh) | 2004-06-16 |
JP2000340563A (ja) | 2000-12-08 |
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