CN1256511A - 制造半导体器件电容器的方法 - Google Patents
制造半导体器件电容器的方法 Download PDFInfo
- Publication number
- CN1256511A CN1256511A CN99123981.4A CN99123981A CN1256511A CN 1256511 A CN1256511 A CN 1256511A CN 99123981 A CN99123981 A CN 99123981A CN 1256511 A CN1256511 A CN 1256511A
- Authority
- CN
- China
- Prior art keywords
- film
- coating
- titanium nitride
- nitride film
- deielectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 76
- 238000000034 method Methods 0.000 title claims abstract description 50
- 239000003990 capacitor Substances 0.000 title claims abstract description 44
- 238000004519 manufacturing process Methods 0.000 title claims description 26
- 238000005530 etching Methods 0.000 claims abstract description 11
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910001925 ruthenium oxide Inorganic materials 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 8
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 52
- 229910052707 ruthenium Inorganic materials 0.000 claims description 52
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 45
- 239000011248 coating agent Substances 0.000 claims description 37
- 238000000576 coating method Methods 0.000 claims description 37
- 239000012528 membrane Substances 0.000 claims description 37
- 230000001590 oxidative effect Effects 0.000 claims description 36
- 230000004888 barrier function Effects 0.000 claims description 35
- 239000010936 titanium Substances 0.000 claims description 25
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 23
- 229910052719 titanium Inorganic materials 0.000 claims description 23
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 18
- 229920005591 polysilicon Polymers 0.000 claims description 18
- 238000006243 chemical reaction Methods 0.000 claims description 15
- 239000011521 glass Substances 0.000 claims description 15
- 238000004528 spin coating Methods 0.000 claims description 15
- 238000005516 engineering process Methods 0.000 claims description 10
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 claims description 9
- 229910021342 tungsten silicide Inorganic materials 0.000 claims description 9
- 229910052451 lead zirconate titanate Inorganic materials 0.000 claims description 6
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 6
- 238000000137 annealing Methods 0.000 claims description 5
- 238000001020 plasma etching Methods 0.000 claims description 4
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 claims description 3
- 239000003518 caustics Substances 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 2
- 238000009501 film coating Methods 0.000 claims 1
- 239000012535 impurity Substances 0.000 abstract description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 16
- 239000007789 gas Substances 0.000 description 14
- 229920002120 photoresistant polymer Polymers 0.000 description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 8
- 230000007797 corrosion Effects 0.000 description 8
- 238000005260 corrosion Methods 0.000 description 8
- 239000001301 oxygen Substances 0.000 description 8
- 229910052760 oxygen Inorganic materials 0.000 description 8
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 6
- 238000000151 deposition Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 238000005240 physical vapour deposition Methods 0.000 description 5
- 238000003860 storage Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 239000011810 insulating material Substances 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- UZBQIPPOMKBLAS-UHFFFAOYSA-N diethylazanide Chemical compound CC[N-]CC UZBQIPPOMKBLAS-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 238000003892 spreading Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 230000007850 degeneration Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000003292 diminished effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000007634 remodeling Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (11)
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950017479A KR0159013B1 (ko) | 1995-06-26 | 1995-06-26 | 반도체소자의 캐패시터 형성방법 |
KR17479/1995 | 1995-06-26 | ||
KR18912/1995 | 1995-06-30 | ||
KR1019950018911A KR100330572B1 (ko) | 1995-06-30 | 1995-06-30 | 반도체소자의캐패시터형성방법 |
KR18911/1995 | 1995-06-30 | ||
KR1019950018912A KR100360150B1 (ko) | 1995-06-30 | 1995-06-30 | 반도체소자의캐패시터형성방법 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN96107006A Division CN1054702C (zh) | 1995-06-26 | 1996-06-26 | 制造半导体器件电容器的方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1256511A true CN1256511A (zh) | 2000-06-14 |
CN1122306C CN1122306C (zh) | 2003-09-24 |
Family
ID=27349191
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN96107006A Expired - Lifetime CN1054702C (zh) | 1995-06-26 | 1996-06-26 | 制造半导体器件电容器的方法 |
CN99123981.4A Expired - Lifetime CN1122306C (zh) | 1995-06-26 | 1999-11-22 | 制造半导体器件电容器的方法 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN96107006A Expired - Lifetime CN1054702C (zh) | 1995-06-26 | 1996-06-26 | 制造半导体器件电容器的方法 |
Country Status (3)
Country | Link |
---|---|
US (3) | US5702970A (zh) |
JP (1) | JP2802262B2 (zh) |
CN (2) | CN1054702C (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7212193B2 (en) | 2001-09-19 | 2007-05-01 | Nec Corporation | Method and circuit for driving display, and portable electronic device |
Families Citing this family (30)
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US6087259A (en) * | 1996-06-24 | 2000-07-11 | Hyundai Electronics Industries Co., Ltd. | Method for forming bit lines of semiconductor devices |
KR100235949B1 (ko) * | 1996-06-27 | 1999-12-15 | 김영환 | 반도체 소자의 캐패시터 제조 방법 |
JP3587004B2 (ja) * | 1996-11-05 | 2004-11-10 | ソニー株式会社 | 半導体メモリセルのキャパシタ構造及びその作製方法 |
JP3003608B2 (ja) * | 1997-01-23 | 2000-01-31 | 日本電気株式会社 | 半導体装置の製造方法 |
JP3060995B2 (ja) * | 1997-05-29 | 2000-07-10 | 日本電気株式会社 | 半導体容量素子構造および製造方法 |
JP3090198B2 (ja) * | 1997-08-21 | 2000-09-18 | 日本電気株式会社 | 半導体装置の構造およびその製造方法 |
TW406406B (en) * | 1998-01-12 | 2000-09-21 | Siemens Ag | DRAM-cells arrangement and its production method |
US6919168B2 (en) | 1998-01-13 | 2005-07-19 | Applied Materials, Inc. | Masking methods and etching sequences for patterning electrodes of high density RAM capacitors |
KR100319879B1 (ko) * | 1998-05-28 | 2002-08-24 | 삼성전자 주식회사 | 백금족금속막식각방법을이용한커패시터의하부전극형성방법 |
US6063709A (en) * | 1998-09-08 | 2000-05-16 | Taiwan Semiconductor Manufacturing Company | Removal of SOG etchback residue by argon treatment |
US6495412B1 (en) | 1998-09-11 | 2002-12-17 | Fujitsu Limited | Semiconductor device having a ferroelectric capacitor and a fabrication process thereof |
US6332900B1 (en) * | 1999-02-08 | 2001-12-25 | Wilson Greatbatch Ltd. | Physical vapor deposited electrode component and method of manufacture |
KR100756742B1 (ko) * | 1999-02-17 | 2007-09-07 | 어플라이드 머티어리얼스, 인코포레이티드 | 고밀도 ram 커패시터의 전극을 패턴화하기 위한 개선된마스킹 방법 및 에칭 공정 |
US6255122B1 (en) | 1999-04-27 | 2001-07-03 | International Business Machines Corporation | Amorphous dielectric capacitors on silicon |
US6388285B1 (en) | 1999-06-04 | 2002-05-14 | International Business Machines Corporation | Feram cell with internal oxygen source and method of oxygen release |
US6146991A (en) * | 1999-09-03 | 2000-11-14 | Taiwan Semiconductor Manufacturing Company | Barrier metal composite layer featuring a thin plasma vapor deposited titanium nitride capping layer |
US6492241B1 (en) * | 2000-04-10 | 2002-12-10 | Micron Technology, Inc. | Integrated capacitors fabricated with conductive metal oxides |
KR100587048B1 (ko) * | 2000-06-01 | 2006-06-07 | 주식회사 하이닉스반도체 | 반도체 메모리 소자의 캐패시터 제조방법 |
US7009240B1 (en) * | 2000-06-21 | 2006-03-07 | Micron Technology, Inc. | Structures and methods for enhancing capacitors in integrated circuits |
KR100414948B1 (ko) * | 2000-06-30 | 2004-01-14 | 주식회사 하이닉스반도체 | 반도체 소자의 캐패시터 제조 방법 |
KR100387264B1 (ko) | 2000-12-29 | 2003-06-12 | 주식회사 하이닉스반도체 | 반도체 소자의 캐패시터 제조 방법 |
JP3364488B1 (ja) * | 2001-07-05 | 2003-01-08 | 東京エレクトロン株式会社 | 反応容器のクリーニング方法及び成膜装置 |
JP2003068882A (ja) * | 2001-08-08 | 2003-03-07 | Huabang Electronic Co Ltd | 記憶装置のストレージノード及びその製造方法 |
US6579766B1 (en) * | 2002-02-15 | 2003-06-17 | Infineon Technologies Ag | Dual gate oxide process without critical resist and without N2 implant |
JP2006097044A (ja) * | 2004-09-28 | 2006-04-13 | L'air Liquide Sa Pour L'etude & L'exploitation Des Procede S Georges Claude | 成膜用前駆体、ルテニウム含有膜の成膜方法、ルテニウム膜の成膜方法、ルテニウム酸化物膜の成膜方法およびルテニウム酸塩膜の成膜方法 |
KR100722988B1 (ko) * | 2005-08-25 | 2007-05-30 | 주식회사 하이닉스반도체 | 반도체 소자 및 그 제조방법 |
US20070279231A1 (en) * | 2006-06-05 | 2007-12-06 | Hong Kong University Of Science And Technology | Asymmetric rfid tag antenna |
US20080072973A1 (en) * | 2006-09-25 | 2008-03-27 | Honeywell International, Inc. | Rotary pneumatic damper for check valve |
KR101607263B1 (ko) | 2009-02-06 | 2016-03-30 | 삼성전자주식회사 | 유전층의 전기적 특성을 향상시킬 수 있는 반도체 소자의 제조방법 |
EP2584588B1 (en) | 2011-10-21 | 2017-10-04 | Imec | Method of forming MIM capacitor with Ru-comprising oxygen diffusion barrier |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63155742A (ja) * | 1986-12-19 | 1988-06-28 | Oki Electric Ind Co Ltd | 半導体素子の製造方法 |
JPH02184079A (ja) * | 1989-01-11 | 1990-07-18 | Seiko Epson Corp | 強誘電体記憶装置の形成法 |
JP2932484B2 (ja) * | 1989-01-18 | 1999-08-09 | ソニー株式会社 | 高融点金属多層膜形成法 |
JPH03108752A (ja) * | 1989-09-22 | 1991-05-08 | Nec Corp | 半導体装置 |
JP2528719B2 (ja) * | 1989-12-01 | 1996-08-28 | 三菱電機株式会社 | 半導体記憶装置 |
JPH05299601A (ja) * | 1992-02-20 | 1993-11-12 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
JP3407204B2 (ja) * | 1992-07-23 | 2003-05-19 | オリンパス光学工業株式会社 | 強誘電体集積回路及びその製造方法 |
US5187638A (en) * | 1992-07-27 | 1993-02-16 | Micron Technology, Inc. | Barrier layers for ferroelectric and pzt dielectric on silicon |
US5348894A (en) * | 1993-01-27 | 1994-09-20 | Texas Instruments Incorporated | Method of forming electrical connections to high dielectric constant materials |
JP3224450B2 (ja) * | 1993-03-26 | 2001-10-29 | 日本酸素株式会社 | 酸化ルテニウムの成膜方法 |
JPH06291253A (ja) * | 1993-04-07 | 1994-10-18 | Oki Electric Ind Co Ltd | 半導体素子の電荷蓄積部の誘電体絶縁膜の形成方法 |
US5358889A (en) * | 1993-04-29 | 1994-10-25 | Northern Telecom Limited | Formation of ruthenium oxide for integrated circuits |
US5407855A (en) * | 1993-06-07 | 1995-04-18 | Motorola, Inc. | Process for forming a semiconductor device having a reducing/oxidizing conductive material |
JPH0730077A (ja) * | 1993-06-23 | 1995-01-31 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
JP2658819B2 (ja) * | 1993-09-13 | 1997-09-30 | 日本電気株式会社 | 薄膜キャパシタ |
JPH0794680A (ja) * | 1993-09-22 | 1995-04-07 | Fujitsu Ltd | 半導体装置の製造方法 |
US5489548A (en) * | 1994-08-01 | 1996-02-06 | Texas Instruments Incorporated | Method of forming high-dielectric-constant material electrodes comprising sidewall spacers |
JP2713178B2 (ja) * | 1994-08-01 | 1998-02-16 | 日本電気株式会社 | 半導体記憶装置およびその製造方法 |
KR0168346B1 (ko) * | 1994-12-29 | 1998-12-15 | 김광호 | 고유전율 재료를 이용한 커패시터 및 그 제조방법 |
JPH09260600A (ja) * | 1996-03-19 | 1997-10-03 | Sharp Corp | 半導体メモリ素子の製造方法 |
-
1996
- 1996-06-26 JP JP8166338A patent/JP2802262B2/ja not_active Expired - Lifetime
- 1996-06-26 US US08/670,592 patent/US5702970A/en not_active Expired - Lifetime
- 1996-06-26 CN CN96107006A patent/CN1054702C/zh not_active Expired - Lifetime
-
1997
- 1997-09-09 US US08/925,060 patent/US5953576A/en not_active Expired - Lifetime
-
1999
- 1999-06-21 US US09/336,698 patent/US6080594A/en not_active Expired - Lifetime
- 1999-11-22 CN CN99123981.4A patent/CN1122306C/zh not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7212193B2 (en) | 2001-09-19 | 2007-05-01 | Nec Corporation | Method and circuit for driving display, and portable electronic device |
Also Published As
Publication number | Publication date |
---|---|
US6080594A (en) | 2000-06-27 |
CN1054702C (zh) | 2000-07-19 |
CN1122306C (zh) | 2003-09-24 |
JP2802262B2 (ja) | 1998-09-24 |
JPH09116115A (ja) | 1997-05-02 |
US5953576A (en) | 1999-09-14 |
CN1143264A (zh) | 1997-02-19 |
US5702970A (en) | 1997-12-30 |
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Owner name: HAIRYOKSA SEMICONDUCTOR CO., LTD. Free format text: FORMER NAME: HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. |
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