CN1252831C - 沟槽栅费米阈值场效应晶体管及其制造方法 - Google Patents

沟槽栅费米阈值场效应晶体管及其制造方法 Download PDF

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Publication number
CN1252831C
CN1252831C CNB018222072A CN01822207A CN1252831C CN 1252831 C CN1252831 C CN 1252831C CN B018222072 A CNB018222072 A CN B018222072A CN 01822207 A CN01822207 A CN 01822207A CN 1252831 C CN1252831 C CN 1252831C
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China
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depth
degree
effect transistor
field
conduction type
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Expired - Fee Related
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CNB018222072A
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English (en)
Chinese (zh)
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CN1488173A (zh
Inventor
M·W·登宁
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Thunderbird Technologies Inc
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Thunderbird Technologies Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/637—Lateral IGFETs having no inversion channels, e.g. buried channel lateral IGFETs, normally-on lateral IGFETs or depletion-mode lateral IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/63—Vertical IGFETs
    • H10D30/635—Vertical IGFETs having no inversion channels, e.g. vertical accumulation channel FETs [ACCUFET] or normally-on vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/025—Manufacture or treatment forming recessed gates, e.g. by using local oxidation
    • H10D64/027—Manufacture or treatment forming recessed gates, e.g. by using local oxidation by etching at gate locations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/608—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having non-planar bodies, e.g. having recessed gate electrodes

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  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CNB018222072A 2000-11-22 2001-11-08 沟槽栅费米阈值场效应晶体管及其制造方法 Expired - Fee Related CN1252831C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/718,816 2000-11-22
US09/718,816 US6555872B1 (en) 2000-11-22 2000-11-22 Trench gate fermi-threshold field effect transistors

Publications (2)

Publication Number Publication Date
CN1488173A CN1488173A (zh) 2004-04-07
CN1252831C true CN1252831C (zh) 2006-04-19

Family

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Family Applications (1)

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CNB018222072A Expired - Fee Related CN1252831C (zh) 2000-11-22 2001-11-08 沟槽栅费米阈值场效应晶体管及其制造方法

Country Status (7)

Country Link
US (1) US6555872B1 (enExample)
EP (1) EP1344257A2 (enExample)
JP (1) JP2004526295A (enExample)
KR (1) KR100840630B1 (enExample)
CN (1) CN1252831C (enExample)
AU (1) AU2002230624A1 (enExample)
WO (1) WO2002043117A2 (enExample)

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6642577B2 (en) * 2000-03-16 2003-11-04 Denso Corporation Semiconductor device including power MOSFET and peripheral device and method for manufacturing the same
KR100459872B1 (ko) * 2003-05-07 2004-12-03 삼성전자주식회사 트렌치 게이트를 갖는 매몰 채널형 트랜지스터 및 그제조방법
KR100604816B1 (ko) * 2003-05-19 2006-07-28 삼성전자주식회사 집적 회로 소자 리세스 트랜지스터의 제조 방법 및 이에의해 제조된 집적회로 소자 리세스 트랜지스터
GB0314392D0 (en) * 2003-06-20 2003-07-23 Koninkl Philips Electronics Nv Trench mos structure
US7217976B2 (en) * 2004-02-09 2007-05-15 International Rectifier Corporation Low temperature process and structures for polycide power MOSFET with ultra-shallow source
KR100526891B1 (ko) 2004-02-25 2005-11-09 삼성전자주식회사 반도체 소자에서의 버티컬 트랜지스터 구조 및 그에 따른형성방법
JP2005285980A (ja) * 2004-03-29 2005-10-13 Sanyo Electric Co Ltd 半導体装置および半導体装置の製造方法
KR100549580B1 (ko) * 2004-06-24 2006-02-08 주식회사 하이닉스반도체 리세스 채널 구조를 갖는 반도체 소자의 제조 방법
DE102004063991B4 (de) 2004-10-29 2009-06-18 Infineon Technologies Ag Verfahren zur Herstellung von dotierten Halbleitergebieten in einem Halbleiterkörper eines lateralen Trenchtransistors
KR101258864B1 (ko) * 2004-12-07 2013-04-29 썬더버드 테크놀로지스, 인코포레이티드 긴장된 실리콘, 게이트 엔지니어링된 페르미－ｆｅｔ
US7271457B2 (en) * 2005-03-04 2007-09-18 Bae Systems Information And Electronic Systems Integration Inc. Abrupt channel doping profile for fermi threshold field effect transistors
JP5114829B2 (ja) * 2005-05-13 2013-01-09 ソニー株式会社 半導体装置およびその製造方法
US20070001199A1 (en) * 2005-06-30 2007-01-04 Thunderbird Technologies, Inc. Circuits and Integrated Circuits Including Field Effect Transistors Having Differing Body Effects
US8338887B2 (en) 2005-07-06 2012-12-25 Infineon Technologies Ag Buried gate transistor
US8110868B2 (en) 2005-07-27 2012-02-07 Infineon Technologies Austria Ag Power semiconductor component with a low on-state resistance
US8461648B2 (en) 2005-07-27 2013-06-11 Infineon Technologies Austria Ag Semiconductor component with a drift region and a drift control region
US7714352B2 (en) * 2006-02-09 2010-05-11 Nissan Motor Co., Ltd. Hetero junction semiconductor device
US7348629B2 (en) * 2006-04-20 2008-03-25 International Business Machines Corporation Metal gated ultra short MOSFET devices
US7956387B2 (en) * 2006-09-08 2011-06-07 Qimonda Ag Transistor and memory cell array
US8115251B2 (en) 2007-04-30 2012-02-14 International Business Machines Corporation Recessed gate channel with low Vt corner
US20090134476A1 (en) * 2007-11-13 2009-05-28 Thunderbird Technologies, Inc. Low temperature coefficient field effect transistors and design and fabrication methods
US20100123206A1 (en) * 2008-11-18 2010-05-20 Thunderbird Technologies, Inc. Methods of fabricating field effect transistors including titanium nitride gates over partially nitrided oxide and devices so fabricated
KR101097867B1 (ko) 2009-06-15 2011-12-23 주식회사 하이닉스반도체 반도체 소자의 제조방법
FR2958779B1 (fr) * 2010-04-07 2015-07-17 Centre Nat Rech Scient Point memoire ram a un transistor
US20130161734A1 (en) * 2011-12-22 2013-06-27 Nan Ya Technology Corporation Transistor structure and method for preparing the same
US8796751B2 (en) 2012-11-20 2014-08-05 Micron Technology, Inc. Transistors, memory cells and semiconductor constructions
JP6513450B2 (ja) * 2015-03-26 2019-05-15 三重富士通セミコンダクター株式会社 半導体装置
DE102015118616B3 (de) 2015-10-30 2017-04-13 Infineon Technologies Austria Ag Latchup-fester Transistor
JP6740986B2 (ja) * 2017-08-31 2020-08-19 株式会社デンソー 炭化珪素半導体装置およびその製造方法
TWI845679B (zh) * 2019-05-13 2024-06-21 以色列商普騰泰克斯有限公司 藉由測量及模擬來確定積體電路的未知偏誤及元件參數
CN112086511B (zh) 2019-06-13 2025-07-18 半导体元件工业有限责任公司 自对准沟槽mosfet接触件的系统和方法
US10892188B2 (en) * 2019-06-13 2021-01-12 Semiconductor Components Industries, Llc Self-aligned trench MOSFET contacts having widths less than minimum lithography limits
CN111767690B (zh) * 2020-06-23 2024-03-22 杰华特微电子股份有限公司 基于lvs工具的盆区检测方法
US11527626B2 (en) * 2020-10-30 2022-12-13 Monolithic Power Systems, Inc. Field-plate trench FET and associated method for manufacturing
WO2022215076A1 (en) 2021-04-07 2022-10-13 Proteantecs Ltd. Adaptive frequency scaling based on clock cycle time measurement
CN116417516A (zh) * 2021-12-31 2023-07-11 无锡华润上华科技有限公司 沟槽型dmos器件及其制备方法
US20230261113A1 (en) * 2022-02-17 2023-08-17 Tokyo Electron Limited 3d ufet device for advanced 3d integration
US12461143B2 (en) 2024-01-24 2025-11-04 Proteantecs Ltd. Integrated circuit margin measurement
CN119153539A (zh) * 2024-11-18 2024-12-17 珠海格力电子元器件有限公司 半导体结构以及半导体器件

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3975221A (en) 1973-08-29 1976-08-17 American Micro-Systems, Inc. Low capacitance V groove MOS NOR gate and method of manufacture
US4835585A (en) 1984-11-26 1989-05-30 American Telephone And Telegraph Company, At&T Bell Laboratories Trench gate structures
US4735918A (en) 1985-05-24 1988-04-05 Hughes Aircraft Company Vertical channel field effect transistor
JPS63287064A (ja) 1987-05-19 1988-11-24 Fujitsu Ltd Ｍｉｓ形半導体装置およびその製造方法
KR0173111B1 (ko) 1988-06-02 1999-02-01 야마무라 가쯔미 트렌치 게이트 mos fet
US4990974A (en) 1989-03-02 1991-02-05 Thunderbird Technologies, Inc. Fermi threshold field effect transistor
US5108938A (en) 1989-03-21 1992-04-28 Grumman Aerospace Corporation Method of making a trench gate complimentary metal oxide semiconductor transistor
US5206182A (en) * 1989-06-08 1993-04-27 United Technologies Corporation Trench isolation process
US5369295A (en) * 1992-01-28 1994-11-29 Thunderbird Technologies, Inc. Fermi threshold field effect transistor with reduced gate and diffusion capacitance
US5440160A (en) * 1992-01-28 1995-08-08 Thunderbird Technologies, Inc. High saturation current, low leakage current fermi threshold field effect transistor
JP2899122B2 (ja) 1991-03-18 1999-06-02 キヤノン株式会社 絶縁ゲートトランジスタ及び半導体集積回路
US5814869A (en) 1992-01-28 1998-09-29 Thunderbird Technologies, Inc. Short channel fermi-threshold field effect transistors
US5543654A (en) * 1992-01-28 1996-08-06 Thunderbird Technologies, Inc. Contoured-tub fermi-threshold field effect transistor and method of forming same
US5367186A (en) * 1992-01-28 1994-11-22 Thunderbird Technologies, Inc. Bounded tub fermi threshold field effect transistor
US5194923A (en) 1992-01-28 1993-03-16 Thunderbird Technologies, Inc. Fermi threshold field effect transistor with reduced gate and diffusion capacitance
US5510630A (en) * 1993-10-18 1996-04-23 Westinghouse Electric Corporation Non-volatile random access memory cell constructed of silicon carbide
US5434435A (en) 1994-05-04 1995-07-18 North Carolina State University Trench gate lateral MOSFET
US5698884A (en) 1996-02-07 1997-12-16 Thunderbird Technologies, Inc. Short channel fermi-threshold field effect transistors including drain field termination region and methods of fabricating same
US5960270A (en) 1997-08-11 1999-09-28 Motorola, Inc. Method for forming an MOS transistor having a metallic gate electrode that is formed after the formation of self-aligned source and drain regions
TW432636B (en) 1997-09-26 2001-05-01 Thunderbird Tech Inc Metal gate fermi-threshold field effect transistor
US5937297A (en) 1998-06-01 1999-08-10 Chartered Semiconductor Manufacturing, Ltd. Method for making sub-quarter-micron MOSFET

Also Published As

Publication number Publication date
KR100840630B1 (ko) 2008-06-24
AU2002230624A1 (en) 2002-06-03
WO2002043117A3 (en) 2002-10-10
WO2002043117A2 (en) 2002-05-30
JP2004526295A (ja) 2004-08-26
EP1344257A2 (en) 2003-09-17
KR20030074626A (ko) 2003-09-19
CN1488173A (zh) 2004-04-07
US6555872B1 (en) 2003-04-29

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