KR100840630B1 - 트렌치 게이트 페르미-임계 전계 효과 트랜지스터 및 그제조 방법 - Google Patents

트렌치 게이트 페르미-임계 전계 효과 트랜지스터 및 그제조 방법 Download PDF

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KR100840630B1
KR100840630B1 KR1020037006925A KR20037006925A KR100840630B1 KR 100840630 B1 KR100840630 B1 KR 100840630B1 KR 1020037006925 A KR1020037006925 A KR 1020037006925A KR 20037006925 A KR20037006925 A KR 20037006925A KR 100840630 B1 KR100840630 B1 KR 100840630B1
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depth
conductivity type
trench
region
effect transistor
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KR20030074626A (ko
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데넨마이클더블유.
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썬더버드 테크놀로지스, 인코포레이티드
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/637—Lateral IGFETs having no inversion channels, e.g. buried channel lateral IGFETs, normally-on lateral IGFETs or depletion-mode lateral IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/63—Vertical IGFETs
    • H10D30/635—Vertical IGFETs having no inversion channels, e.g. vertical accumulation channel FETs [ACCUFET] or normally-on vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/025—Manufacture or treatment forming recessed gates, e.g. by using local oxidation
    • H10D64/027—Manufacture or treatment forming recessed gates, e.g. by using local oxidation by etching at gate locations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/608—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having non-planar bodies, e.g. having recessed gate electrodes

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  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
KR1020037006925A 2000-11-22 2001-11-08 트렌치 게이트 페르미-임계 전계 효과 트랜지스터 및 그제조 방법 Expired - Fee Related KR100840630B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/718,816 2000-11-22
US09/718,816 US6555872B1 (en) 2000-11-22 2000-11-22 Trench gate fermi-threshold field effect transistors
PCT/US2001/046746 WO2002043117A2 (en) 2000-11-22 2001-11-08 Trench gate fermi-threshold field effect transistors and methods of fabricating the same

Publications (2)

Publication Number Publication Date
KR20030074626A KR20030074626A (ko) 2003-09-19
KR100840630B1 true KR100840630B1 (ko) 2008-06-24

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KR1020037006925A Expired - Fee Related KR100840630B1 (ko) 2000-11-22 2001-11-08 트렌치 게이트 페르미-임계 전계 효과 트랜지스터 및 그제조 방법

Country Status (7)

Country Link
US (1) US6555872B1 (enExample)
EP (1) EP1344257A2 (enExample)
JP (1) JP2004526295A (enExample)
KR (1) KR100840630B1 (enExample)
CN (1) CN1252831C (enExample)
AU (1) AU2002230624A1 (enExample)
WO (1) WO2002043117A2 (enExample)

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KR101097867B1 (ko) 2009-06-15 2011-12-23 주식회사 하이닉스반도체 반도체 소자의 제조방법

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KR100604816B1 (ko) * 2003-05-19 2006-07-28 삼성전자주식회사 집적 회로 소자 리세스 트랜지스터의 제조 방법 및 이에의해 제조된 집적회로 소자 리세스 트랜지스터
GB0314392D0 (en) * 2003-06-20 2003-07-23 Koninkl Philips Electronics Nv Trench mos structure
US7217976B2 (en) * 2004-02-09 2007-05-15 International Rectifier Corporation Low temperature process and structures for polycide power MOSFET with ultra-shallow source
KR100526891B1 (ko) 2004-02-25 2005-11-09 삼성전자주식회사 반도체 소자에서의 버티컬 트랜지스터 구조 및 그에 따른형성방법
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US8110868B2 (en) 2005-07-27 2012-02-07 Infineon Technologies Austria Ag Power semiconductor component with a low on-state resistance
US8461648B2 (en) 2005-07-27 2013-06-11 Infineon Technologies Austria Ag Semiconductor component with a drift region and a drift control region
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US7348629B2 (en) * 2006-04-20 2008-03-25 International Business Machines Corporation Metal gated ultra short MOSFET devices
US7956387B2 (en) * 2006-09-08 2011-06-07 Qimonda Ag Transistor and memory cell array
US8115251B2 (en) 2007-04-30 2012-02-14 International Business Machines Corporation Recessed gate channel with low Vt corner
US20090134476A1 (en) * 2007-11-13 2009-05-28 Thunderbird Technologies, Inc. Low temperature coefficient field effect transistors and design and fabrication methods
US20100123206A1 (en) * 2008-11-18 2010-05-20 Thunderbird Technologies, Inc. Methods of fabricating field effect transistors including titanium nitride gates over partially nitrided oxide and devices so fabricated
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US20130161734A1 (en) * 2011-12-22 2013-06-27 Nan Ya Technology Corporation Transistor structure and method for preparing the same
US8796751B2 (en) 2012-11-20 2014-08-05 Micron Technology, Inc. Transistors, memory cells and semiconductor constructions
JP6513450B2 (ja) * 2015-03-26 2019-05-15 三重富士通セミコンダクター株式会社 半導体装置
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JP6740986B2 (ja) * 2017-08-31 2020-08-19 株式会社デンソー 炭化珪素半導体装置およびその製造方法
TWI845679B (zh) * 2019-05-13 2024-06-21 以色列商普騰泰克斯有限公司 藉由測量及模擬來確定積體電路的未知偏誤及元件參數
CN112086511B (zh) 2019-06-13 2025-07-18 半导体元件工业有限责任公司 自对准沟槽mosfet接触件的系统和方法
US10892188B2 (en) * 2019-06-13 2021-01-12 Semiconductor Components Industries, Llc Self-aligned trench MOSFET contacts having widths less than minimum lithography limits
CN111767690B (zh) * 2020-06-23 2024-03-22 杰华特微电子股份有限公司 基于lvs工具的盆区检测方法
US11527626B2 (en) * 2020-10-30 2022-12-13 Monolithic Power Systems, Inc. Field-plate trench FET and associated method for manufacturing
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CN116417516A (zh) * 2021-12-31 2023-07-11 无锡华润上华科技有限公司 沟槽型dmos器件及其制备方法
US20230261113A1 (en) * 2022-02-17 2023-08-17 Tokyo Electron Limited 3d ufet device for advanced 3d integration
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CN119153539A (zh) * 2024-11-18 2024-12-17 珠海格力电子元器件有限公司 半导体结构以及半导体器件

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AU2002230624A1 (en) 2002-06-03
WO2002043117A3 (en) 2002-10-10
WO2002043117A2 (en) 2002-05-30
JP2004526295A (ja) 2004-08-26
EP1344257A2 (en) 2003-09-17
CN1252831C (zh) 2006-04-19
KR20030074626A (ko) 2003-09-19
CN1488173A (zh) 2004-04-07
US6555872B1 (en) 2003-04-29

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