AU2002230624A1 - Trench gate fermi-threshold field effect transistors and methods of fabricating the same - Google Patents

Trench gate fermi-threshold field effect transistors and methods of fabricating the same

Info

Publication number
AU2002230624A1
AU2002230624A1 AU2002230624A AU3062402A AU2002230624A1 AU 2002230624 A1 AU2002230624 A1 AU 2002230624A1 AU 2002230624 A AU2002230624 A AU 2002230624A AU 3062402 A AU3062402 A AU 3062402A AU 2002230624 A1 AU2002230624 A1 AU 2002230624A1
Authority
AU
Australia
Prior art keywords
fabricating
methods
same
field effect
effect transistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002230624A
Other languages
English (en)
Inventor
Michael W. Dennen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thunderbird Technologies Inc
Original Assignee
Thunderbird Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thunderbird Technologies Inc filed Critical Thunderbird Technologies Inc
Publication of AU2002230624A1 publication Critical patent/AU2002230624A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/637—Lateral IGFETs having no inversion channels, e.g. buried channel lateral IGFETs, normally-on lateral IGFETs or depletion-mode lateral IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/63—Vertical IGFETs
    • H10D30/635—Vertical IGFETs having no inversion channels, e.g. vertical accumulation channel FETs [ACCUFET] or normally-on vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/025—Manufacture or treatment forming recessed gates, e.g. by using local oxidation
    • H10D64/027—Manufacture or treatment forming recessed gates, e.g. by using local oxidation by etching at gate locations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/608—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having non-planar bodies, e.g. having recessed gate electrodes
AU2002230624A 2000-11-22 2001-11-08 Trench gate fermi-threshold field effect transistors and methods of fabricating the same Abandoned AU2002230624A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/718,816 2000-11-22
US09/718,816 US6555872B1 (en) 2000-11-22 2000-11-22 Trench gate fermi-threshold field effect transistors
PCT/US2001/046746 WO2002043117A2 (en) 2000-11-22 2001-11-08 Trench gate fermi-threshold field effect transistors and methods of fabricating the same

Publications (1)

Publication Number Publication Date
AU2002230624A1 true AU2002230624A1 (en) 2002-06-03

Family

ID=24887671

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002230624A Abandoned AU2002230624A1 (en) 2000-11-22 2001-11-08 Trench gate fermi-threshold field effect transistors and methods of fabricating the same

Country Status (7)

Country Link
US (1) US6555872B1 (enExample)
EP (1) EP1344257A2 (enExample)
JP (1) JP2004526295A (enExample)
KR (1) KR100840630B1 (enExample)
CN (1) CN1252831C (enExample)
AU (1) AU2002230624A1 (enExample)
WO (1) WO2002043117A2 (enExample)

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US7217976B2 (en) * 2004-02-09 2007-05-15 International Rectifier Corporation Low temperature process and structures for polycide power MOSFET with ultra-shallow source
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JP2005285980A (ja) * 2004-03-29 2005-10-13 Sanyo Electric Co Ltd 半導体装置および半導体装置の製造方法
KR100549580B1 (ko) * 2004-06-24 2006-02-08 주식회사 하이닉스반도체 리세스 채널 구조를 갖는 반도체 소자의 제조 방법
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KR101258864B1 (ko) * 2004-12-07 2013-04-29 썬더버드 테크놀로지스, 인코포레이티드 긴장된 실리콘, 게이트 엔지니어링된 페르미－ｆｅｔ
US7271457B2 (en) * 2005-03-04 2007-09-18 Bae Systems Information And Electronic Systems Integration Inc. Abrupt channel doping profile for fermi threshold field effect transistors
JP5114829B2 (ja) * 2005-05-13 2013-01-09 ソニー株式会社 半導体装置およびその製造方法
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US8461648B2 (en) 2005-07-27 2013-06-11 Infineon Technologies Austria Ag Semiconductor component with a drift region and a drift control region
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US7348629B2 (en) * 2006-04-20 2008-03-25 International Business Machines Corporation Metal gated ultra short MOSFET devices
US7956387B2 (en) * 2006-09-08 2011-06-07 Qimonda Ag Transistor and memory cell array
US8115251B2 (en) 2007-04-30 2012-02-14 International Business Machines Corporation Recessed gate channel with low Vt corner
US20090134476A1 (en) * 2007-11-13 2009-05-28 Thunderbird Technologies, Inc. Low temperature coefficient field effect transistors and design and fabrication methods
US20100123206A1 (en) * 2008-11-18 2010-05-20 Thunderbird Technologies, Inc. Methods of fabricating field effect transistors including titanium nitride gates over partially nitrided oxide and devices so fabricated
KR101097867B1 (ko) 2009-06-15 2011-12-23 주식회사 하이닉스반도체 반도체 소자의 제조방법
FR2958779B1 (fr) * 2010-04-07 2015-07-17 Centre Nat Rech Scient Point memoire ram a un transistor
US20130161734A1 (en) * 2011-12-22 2013-06-27 Nan Ya Technology Corporation Transistor structure and method for preparing the same
US8796751B2 (en) 2012-11-20 2014-08-05 Micron Technology, Inc. Transistors, memory cells and semiconductor constructions
JP6513450B2 (ja) * 2015-03-26 2019-05-15 三重富士通セミコンダクター株式会社 半導体装置
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JP6740986B2 (ja) * 2017-08-31 2020-08-19 株式会社デンソー 炭化珪素半導体装置およびその製造方法
TWI845679B (zh) * 2019-05-13 2024-06-21 以色列商普騰泰克斯有限公司 藉由測量及模擬來確定積體電路的未知偏誤及元件參數
CN112086511B (zh) 2019-06-13 2025-07-18 半导体元件工业有限责任公司 自对准沟槽mosfet接触件的系统和方法
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Also Published As

Publication number Publication date
KR100840630B1 (ko) 2008-06-24
WO2002043117A3 (en) 2002-10-10
WO2002043117A2 (en) 2002-05-30
JP2004526295A (ja) 2004-08-26
EP1344257A2 (en) 2003-09-17
CN1252831C (zh) 2006-04-19
KR20030074626A (ko) 2003-09-19
CN1488173A (zh) 2004-04-07
US6555872B1 (en) 2003-04-29

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