JP2004526295A - トレンチゲートフェルミしきい値形電界効果トランジスタ及びその製造方法 - Google Patents

トレンチゲートフェルミしきい値形電界効果トランジスタ及びその製造方法 Download PDF

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JP2004526295A
JP2004526295A JP2002544763A JP2002544763A JP2004526295A JP 2004526295 A JP2004526295 A JP 2004526295A JP 2002544763 A JP2002544763 A JP 2002544763A JP 2002544763 A JP2002544763 A JP 2002544763A JP 2004526295 A JP2004526295 A JP 2004526295A
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depth
effect transistor
field effect
conductivity type
region
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JP2002544763A
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Japanese (ja)
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JP2004526295A5 (enExample
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デネン，マイケル・ダブリュー
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Thunderbird Technologes inc
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Thunderbird Technologes inc
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Publication of JP2004526295A publication Critical patent/JP2004526295A/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/637—Lateral IGFETs having no inversion channels, e.g. buried channel lateral IGFETs, normally-on lateral IGFETs or depletion-mode lateral IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/63—Vertical IGFETs
    • H10D30/635—Vertical IGFETs having no inversion channels, e.g. vertical accumulation channel FETs [ACCUFET] or normally-on vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/025—Manufacture or treatment forming recessed gates, e.g. by using local oxidation
    • H10D64/027—Manufacture or treatment forming recessed gates, e.g. by using local oxidation by etching at gate locations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/608—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having non-planar bodies, e.g. having recessed gate electrodes

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  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2002544763A 2000-11-22 2001-11-08 トレンチゲートフェルミしきい値形電界効果トランジスタ及びその製造方法 Pending JP2004526295A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/718,816 US6555872B1 (en) 2000-11-22 2000-11-22 Trench gate fermi-threshold field effect transistors
PCT/US2001/046746 WO2002043117A2 (en) 2000-11-22 2001-11-08 Trench gate fermi-threshold field effect transistors and methods of fabricating the same

Publications (2)

Publication Number Publication Date
JP2004526295A true JP2004526295A (ja) 2004-08-26
JP2004526295A5 JP2004526295A5 (enExample) 2005-12-22

Family

ID=24887671

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002544763A Pending JP2004526295A (ja) 2000-11-22 2001-11-08 トレンチゲートフェルミしきい値形電界効果トランジスタ及びその製造方法

Country Status (7)

Country Link
US (1) US6555872B1 (enExample)
EP (1) EP1344257A2 (enExample)
JP (1) JP2004526295A (enExample)
KR (1) KR100840630B1 (enExample)
CN (1) CN1252831C (enExample)
AU (1) AU2002230624A1 (enExample)
WO (1) WO2002043117A2 (enExample)

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JP2006319185A (ja) * 2005-05-13 2006-11-24 Sony Corp 半導体装置およびその製造方法

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KR100604816B1 (ko) * 2003-05-19 2006-07-28 삼성전자주식회사 집적 회로 소자 리세스 트랜지스터의 제조 방법 및 이에의해 제조된 집적회로 소자 리세스 트랜지스터
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KR100526891B1 (ko) 2004-02-25 2005-11-09 삼성전자주식회사 반도체 소자에서의 버티컬 트랜지스터 구조 및 그에 따른형성방법
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KR101097867B1 (ko) 2009-06-15 2011-12-23 주식회사 하이닉스반도체 반도체 소자의 제조방법
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US20130161734A1 (en) * 2011-12-22 2013-06-27 Nan Ya Technology Corporation Transistor structure and method for preparing the same
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JP6740986B2 (ja) * 2017-08-31 2020-08-19 株式会社デンソー 炭化珪素半導体装置およびその製造方法
TWI845679B (zh) * 2019-05-13 2024-06-21 以色列商普騰泰克斯有限公司 藉由測量及模擬來確定積體電路的未知偏誤及元件參數
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Also Published As

Publication number Publication date
KR100840630B1 (ko) 2008-06-24
AU2002230624A1 (en) 2002-06-03
WO2002043117A3 (en) 2002-10-10
WO2002043117A2 (en) 2002-05-30
EP1344257A2 (en) 2003-09-17
CN1252831C (zh) 2006-04-19
KR20030074626A (ko) 2003-09-19
CN1488173A (zh) 2004-04-07
US6555872B1 (en) 2003-04-29

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