JP2004526295A5 - - Google Patents

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Publication number
JP2004526295A5
JP2004526295A5 JP2002544763A JP2002544763A JP2004526295A5 JP 2004526295 A5 JP2004526295 A5 JP 2004526295A5 JP 2002544763 A JP2002544763 A JP 2002544763A JP 2002544763 A JP2002544763 A JP 2002544763A JP 2004526295 A5 JP2004526295 A5 JP 2004526295A5
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JP
Japan
Prior art keywords
effect transistor
field effect
depth
conductivity type
trench
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002544763A
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English (en)
Japanese (ja)
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JP2004526295A (ja
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Publication date
Priority claimed from US09/718,816 external-priority patent/US6555872B1/en
Application filed filed Critical
Publication of JP2004526295A publication Critical patent/JP2004526295A/ja
Publication of JP2004526295A5 publication Critical patent/JP2004526295A5/ja
Pending legal-status Critical Current

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JP2002544763A 2000-11-22 2001-11-08 トレンチゲートフェルミしきい値形電界効果トランジスタ及びその製造方法 Pending JP2004526295A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/718,816 US6555872B1 (en) 2000-11-22 2000-11-22 Trench gate fermi-threshold field effect transistors
PCT/US2001/046746 WO2002043117A2 (en) 2000-11-22 2001-11-08 Trench gate fermi-threshold field effect transistors and methods of fabricating the same

Publications (2)

Publication Number Publication Date
JP2004526295A JP2004526295A (ja) 2004-08-26
JP2004526295A5 true JP2004526295A5 (enExample) 2005-12-22

Family

ID=24887671

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002544763A Pending JP2004526295A (ja) 2000-11-22 2001-11-08 トレンチゲートフェルミしきい値形電界効果トランジスタ及びその製造方法

Country Status (7)

Country Link
US (1) US6555872B1 (enExample)
EP (1) EP1344257A2 (enExample)
JP (1) JP2004526295A (enExample)
KR (1) KR100840630B1 (enExample)
CN (1) CN1252831C (enExample)
AU (1) AU2002230624A1 (enExample)
WO (1) WO2002043117A2 (enExample)

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US20130161734A1 (en) * 2011-12-22 2013-06-27 Nan Ya Technology Corporation Transistor structure and method for preparing the same
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JP6513450B2 (ja) * 2015-03-26 2019-05-15 三重富士通セミコンダクター株式会社 半導体装置
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JP6740986B2 (ja) * 2017-08-31 2020-08-19 株式会社デンソー 炭化珪素半導体装置およびその製造方法
TWI845679B (zh) * 2019-05-13 2024-06-21 以色列商普騰泰克斯有限公司 藉由測量及模擬來確定積體電路的未知偏誤及元件參數
CN112086511B (zh) 2019-06-13 2025-07-18 半导体元件工业有限责任公司 自对准沟槽mosfet接触件的系统和方法
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US11527626B2 (en) * 2020-10-30 2022-12-13 Monolithic Power Systems, Inc. Field-plate trench FET and associated method for manufacturing
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