CN1230902C - 设置在半导体电路中的保护电路 - Google Patents

设置在半导体电路中的保护电路 Download PDF

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Publication number
CN1230902C
CN1230902C CNB011371846A CN01137184A CN1230902C CN 1230902 C CN1230902 C CN 1230902C CN B011371846 A CNB011371846 A CN B011371846A CN 01137184 A CN01137184 A CN 01137184A CN 1230902 C CN1230902 C CN 1230902C
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CN
China
Prior art keywords
mentioned
mos transistor
terminal
ditch mos
grid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB011371846A
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English (en)
Chinese (zh)
Other versions
CN1350331A (zh
Inventor
泷场明
衣笠昌典
伊藤佳充
水田胜
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
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Toshiba Corp
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Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of CN1350331A publication Critical patent/CN1350331A/zh
Application granted granted Critical
Publication of CN1230902C publication Critical patent/CN1230902C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements

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  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CNB011371846A 2000-10-24 2001-10-24 设置在半导体电路中的保护电路 Expired - Fee Related CN1230902C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000324190A JP2002134628A (ja) 2000-10-24 2000-10-24 保護回路
JP324190/2000 2000-10-24

Publications (2)

Publication Number Publication Date
CN1350331A CN1350331A (zh) 2002-05-22
CN1230902C true CN1230902C (zh) 2005-12-07

Family

ID=18801760

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB011371846A Expired - Fee Related CN1230902C (zh) 2000-10-24 2001-10-24 设置在半导体电路中的保护电路

Country Status (6)

Country Link
US (1) US6762460B2 (enExample)
EP (1) EP1202351A3 (enExample)
JP (1) JP2002134628A (enExample)
KR (1) KR100477566B1 (enExample)
CN (1) CN1230902C (enExample)
TW (1) TW506117B (enExample)

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4044313A (en) * 1976-12-01 1977-08-23 Rca Corporation Protective network for an insulated-gate field-effect (IGFET) differential amplifier
JPS6143468A (ja) * 1984-08-07 1986-03-03 Mitsubishi Electric Corp 保護回路
JPH03105967A (ja) * 1989-09-19 1991-05-02 Nec Corp 半導体装置の入出力保護回路
US6043538A (en) * 1993-09-30 2000-03-28 Intel Corporation Device structure for high voltage tolerant transistor on a 3.3 volt process
FR2723800B1 (fr) * 1994-08-19 1997-01-03 Thomson Csf Semiconducteurs Circuit de protection contre les decharges electrostatiques
JP2874583B2 (ja) * 1995-02-10 1999-03-24 日本電気株式会社 半導体装置の入力保護回路
JPH08274184A (ja) * 1995-03-31 1996-10-18 Toshiba Microelectron Corp 半導体集積回路の保護回路装置
JP3440972B2 (ja) * 1996-05-01 2003-08-25 日本電信電話株式会社 サージ保護回路
JP3301278B2 (ja) * 1995-06-02 2002-07-15 日本電信電話株式会社 サージ保護回路
JP3334741B2 (ja) * 1995-09-21 2002-10-15 日本電信電話株式会社 半導体入力回路
US5751525A (en) * 1996-01-05 1998-05-12 Analog Devices, Inc. EOS/ESD Protection circuit for an integrated circuit with operating/test voltages exceeding power supply rail voltages
JPH09326685A (ja) 1996-06-05 1997-12-16 Fujitsu Ltd 半導体装置
US5854504A (en) * 1997-04-01 1998-12-29 Maxim Integrated Products, Inc. Process tolerant NMOS transistor for electrostatic discharge protection
JPH10321842A (ja) 1997-05-15 1998-12-04 Toshiba Microelectron Corp 半導体装置
US6091594A (en) * 1998-02-18 2000-07-18 Vlsi Technology, Inc. Protection circuits and methods of protecting a semiconductor device
JP3252790B2 (ja) * 1998-04-23 2002-02-04 日本電気株式会社 半導体集積回路

Also Published As

Publication number Publication date
JP2002134628A (ja) 2002-05-10
US20020053697A1 (en) 2002-05-09
KR100477566B1 (ko) 2005-03-18
EP1202351A2 (en) 2002-05-02
US6762460B2 (en) 2004-07-13
KR20020032372A (ko) 2002-05-03
CN1350331A (zh) 2002-05-22
TW506117B (en) 2002-10-11
EP1202351A3 (en) 2006-10-11

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C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C06 Publication
PB01 Publication
C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20051207

Termination date: 20091124