CN1208947A - 双镶嵌结构 - Google Patents
双镶嵌结构 Download PDFInfo
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- CN1208947A CN1208947A CN98115629A CN98115629A CN1208947A CN 1208947 A CN1208947 A CN 1208947A CN 98115629 A CN98115629 A CN 98115629A CN 98115629 A CN98115629 A CN 98115629A CN 1208947 A CN1208947 A CN 1208947A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
- H01L21/76808—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures involving intermediate temporary filling with material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/10—Applying interconnections to be used for carrying current between separate components within a device
- H01L2221/1005—Formation and after-treatment of dielectrics
- H01L2221/101—Forming openings in dielectrics
- H01L2221/1015—Forming openings in dielectrics for dual damascene structures
- H01L2221/1026—Forming openings in dielectrics for dual damascene structures the via being formed by burying a sacrificial pillar in the dielectric and removing the pillar
Abstract
Description
牺牲材料 | 金属层间介电层 | 蚀刻剂 |
可流动氧化物(FOx) | A418 SOG(旋涂玻璃) | BHF |
可流动氧化物 | HSG-R7 SOG | BHF |
可流动氧化物 | 有机掺杂CVD氧化物 | BHF |
可流动氧化物 | CVD氧化物 | BHF |
CVD氧化物 | A418 SOG | |
CVD氧化物 | HSG-R7 SOG | BHF |
BSG | A418 SOG | BHF |
BSG | HSG-R7 SOG | |
BSG | 有机掺杂CVD氧化物 | BHF |
BSG | 转变的CVD氧化物 | BHF |
SiN | CVD氧化物 | CDE |
有机材料,不含硅(聚对二甲基苯、PBO) | CVD氧化物 | 氧气 |
有机材料,不含硅(聚对二甲基苯、光敏聚酰亚胺、PBO) | 含硅有机材料(BCB) | 氧气 |
Claims (19)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/884,729 US6033977A (en) | 1997-06-30 | 1997-06-30 | Dual damascene structure |
US884,729 | 1997-06-30 | ||
US884729 | 2001-06-19 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1208947A true CN1208947A (zh) | 1999-02-24 |
CN1152413C CN1152413C (zh) | 2004-06-02 |
Family
ID=25385261
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB981156290A Expired - Fee Related CN1152413C (zh) | 1997-06-30 | 1998-06-30 | 制造双镶嵌结构的方法和结构 |
Country Status (7)
Country | Link |
---|---|
US (1) | US6033977A (zh) |
EP (1) | EP0890984B1 (zh) |
JP (1) | JP4690509B2 (zh) |
KR (1) | KR100535798B1 (zh) |
CN (1) | CN1152413C (zh) |
DE (1) | DE69826934T2 (zh) |
TW (1) | TW399314B (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100365765C (zh) * | 2002-09-23 | 2008-01-30 | 国际商业机器公司 | 双镶嵌结构中的金属-绝缘体-金属电容结构及制造方法 |
CN100403516C (zh) * | 2005-06-20 | 2008-07-16 | 台湾积体电路制造股份有限公司 | 用以制造半导体装置的双镶嵌制程 |
CN1658375B (zh) * | 1999-08-26 | 2011-03-30 | 布鲁尔科技公司 | 改进的用于双金属镶嵌方法中的填充物料 |
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JPH08288385A (ja) * | 1995-04-13 | 1996-11-01 | Toshiba Corp | 半導体装置の製造方法 |
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-
1997
- 1997-06-30 US US08/884,729 patent/US6033977A/en not_active Expired - Lifetime
-
1998
- 1998-05-25 TW TW087108059A patent/TW399314B/zh not_active IP Right Cessation
- 1998-06-05 EP EP98110288A patent/EP0890984B1/en not_active Expired - Lifetime
- 1998-06-05 DE DE69826934T patent/DE69826934T2/de not_active Expired - Lifetime
- 1998-06-23 KR KR1019980023582A patent/KR100535798B1/ko not_active IP Right Cessation
- 1998-06-30 CN CNB981156290A patent/CN1152413C/zh not_active Expired - Fee Related
- 1998-06-30 JP JP18405798A patent/JP4690509B2/ja not_active Expired - Fee Related
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1658375B (zh) * | 1999-08-26 | 2011-03-30 | 布鲁尔科技公司 | 改进的用于双金属镶嵌方法中的填充物料 |
CN100365765C (zh) * | 2002-09-23 | 2008-01-30 | 国际商业机器公司 | 双镶嵌结构中的金属-绝缘体-金属电容结构及制造方法 |
CN100403516C (zh) * | 2005-06-20 | 2008-07-16 | 台湾积体电路制造股份有限公司 | 用以制造半导体装置的双镶嵌制程 |
Also Published As
Publication number | Publication date |
---|---|
JP4690509B2 (ja) | 2011-06-01 |
KR100535798B1 (ko) | 2006-02-28 |
EP0890984B1 (en) | 2004-10-13 |
DE69826934T2 (de) | 2005-10-13 |
EP0890984A1 (en) | 1999-01-13 |
KR19990007227A (ko) | 1999-01-25 |
JPH1174356A (ja) | 1999-03-16 |
CN1152413C (zh) | 2004-06-02 |
US6033977A (en) | 2000-03-07 |
TW399314B (en) | 2000-07-21 |
DE69826934D1 (de) | 2004-11-18 |
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