KR20090033450A - 유전체 에어 갭을 갖는 상호접속 구조물 - Google Patents
유전체 에어 갭을 갖는 상호접속 구조물 Download PDFInfo
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- KR20090033450A KR20090033450A KR1020097001425A KR20097001425A KR20090033450A KR 20090033450 A KR20090033450 A KR 20090033450A KR 1020097001425 A KR1020097001425 A KR 1020097001425A KR 20097001425 A KR20097001425 A KR 20097001425A KR 20090033450 A KR20090033450 A KR 20090033450A
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- 239000000463 material Substances 0.000 claims abstract description 66
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 41
- 238000000034 method Methods 0.000 claims description 36
- 239000003989 dielectric material Substances 0.000 claims description 17
- 230000008569 process Effects 0.000 claims description 16
- 238000000151 deposition Methods 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 230000005660 hydrophilic surface Effects 0.000 claims description 4
- 229910052763 palladium Inorganic materials 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 229910016570 AlCu Inorganic materials 0.000 claims description 2
- 229910000531 Co alloy Inorganic materials 0.000 claims description 2
- 229910052796 boron Inorganic materials 0.000 claims description 2
- 229910052698 phosphorus Inorganic materials 0.000 claims description 2
- 229910052718 tin Inorganic materials 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 238000012545 processing Methods 0.000 abstract description 7
- 239000010410 layer Substances 0.000 description 58
- 239000012212 insulator Substances 0.000 description 12
- 238000005191 phase separation Methods 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 238000001020 plasma etching Methods 0.000 description 7
- 230000008021 deposition Effects 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 239000004020 conductor Substances 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 230000006872 improvement Effects 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- 238000003848 UV Light-Curing Methods 0.000 description 3
- 230000002051 biphasic effect Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 150000001299 aldehydes Chemical class 0.000 description 2
- 150000001408 amides Chemical class 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 230000002209 hydrophobic effect Effects 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 150000001282 organosilanes Chemical class 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 1
- -1 CoSnP Substances 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 125000001301 ethoxy group Chemical group [H]C([H])([H])C([H])([H])O* 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000005661 hydrophobic surface Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- UIDUKLCLJMXFEO-UHFFFAOYSA-N propylsilane Chemical class CCC[SiH3] UIDUKLCLJMXFEO-UHFFFAOYSA-N 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- PQDJYEQOELDLCP-UHFFFAOYSA-N trimethylsilane Chemical compound C[SiH](C)C PQDJYEQOELDLCP-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/7682—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing the dielectric comprising air gaps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76835—Combinations of two or more different dielectric layers having a low dielectric constant
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
Claims (10)
- 상호접속 구조물을 형성하는 방법에 있어서,기판상에 증착된 제1 유전체 층(201)내에 매립된 상호접속 특징물(202)을 형성하는 단계로서, 상기 상호접속 특징물(202)은 패턴화되고 노출된 상호접속 영역(204)을 갖는 것인, 상기 상호접속 특징물(202) 형성 단계;상기 노출된 상호접속 영역(204)을 에워싸는 상기 제1 유전체 층(201)의 일부상에 제2 물질층(203)을 형성하는 단계;상기 노출된 상호접속 영역(204)상에 캡 층(211)을 형성하는 단계;상기 제2 물질층(203)과 상기 캡 층(211)상에 다중상(multi phase) 포토레지스트(221)를 증착시키는 단계; 및상기 제2 물질층(203)에 인접한 상기 다중상 포토레지스트(221)의 일부를 서로다른 상 패턴을 갖는 물질들로 분리시키는 단계를 포함하는 상호접속 구조물을 형성하는 방법.
- 제 1 항에 있어서,상기 노출된 상호접속 영역(204)을 에워싸는 상기 제1 유전체 층(201)의 일부 내에 원주형 에어 갭(240)을 형성하는 단계와, RIE 프로세스를 이용하여 상기 다중상 포토레지스트(221)와 상기 제2 물질층(203)을 제거하는 단계를 더 포함하는 상호접속 구조물을 형성하는 방법.
- 제 1 항에 있어서, 상기 제2 물질층(203)은 친수성 표면을 갖는 것인, 상호접속 구조물을 형성하는 방법.
- 제 1 항에 있어서, 상기 제2 물질층(203)은 대략 20Å 내지 대략 800Å 사이의 두께를 갖는 것인, 상호접속 구조물을 형성하는 방법.
- 제 1 항에 있어서, 상기 상호접속 특징물(202)은 Cu, Al, AlCu, 및 W으로 구성된 그룹으로부터 선택된 물질을 포함하는 것인, 상호접속 구조물을 형성하는 방법.
- 제 1 항에 있어서, 상기 제1 유전체 층(201)은 낮은 유전상수 물질인 것인, 상호접속 구조물을 형성하는 방법.
- 제 1 항에 있어서, 상기 제1 유전체 층(201)은 대략 500Å 내지 대략 10,000Å 사이의 두께를 갖는 것인, 상호접속 구조물을 형성하는 방법.
- 제 1 항에 있어서, 상기 캡 층(211)은 W, P, B, Sn, 및 Pd로 구성된 그룹으로부터 선택된 물질을 갖는 Co 합금인 것인, 상호접속 구조물을 형성하는 방법.
- 상호접속 구조물에 있어서,제1 유전체 층(201)내에 매립되고, 패턴화되고 노출된 상호접속 영역(204)을 갖는 상호접속 특징물(202);상기 노출된 상호접속 영역(204)상의 캡 층(211);상기 노출된 상호접속 영역(204)을 에워싸는 상기 제1 유전체 층(201)의 일부내의 원주형 에어 갭 구조물(240); 및상기 원주형 에어 갭 구조물(240)과 상기 캡 층(211)상의 제2 유전체 물질(251)을 포함하는 상호접속 구조물.
- 상호접속 구조물에 있어서,제1 유전체 층(201)내에 매립되고, 패턴화되고 노출된 상호접속 영역(204)을 갖는 상호접속 특징물(202);상기 노출된 상호접속 영역(204)상의 캡 층(211);상기 노출된 상호접속 영역(204)을 에워싸는 상기 제1 유전체 층(201)의 일부내의 두 종류의 유전상수 k 물질로 구성된 유전체 물질 구조물(241); 및상기 원주형 에어 갭 구조물(240)과 상기 캡 층(211)상의 제2 유전체 물질(251)을 포함하는 상호접속 구조물.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/456,721 | 2006-07-11 | ||
US11/456,721 US7396757B2 (en) | 2006-07-11 | 2006-07-11 | Interconnect structure with dielectric air gaps |
PCT/US2007/073128 WO2008008758A2 (en) | 2006-07-11 | 2007-07-10 | An interconnect structure with dielectric air gaps |
Publications (2)
Publication Number | Publication Date |
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KR20090033450A true KR20090033450A (ko) | 2009-04-03 |
KR101054709B1 KR101054709B1 (ko) | 2011-08-05 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1020097001425A Expired - Fee Related KR101054709B1 (ko) | 2006-07-11 | 2007-07-10 | 유전체 에어 갭을 갖는 상호접속 구조물 |
Country Status (7)
Country | Link |
---|---|
US (2) | US7396757B2 (ko) |
EP (1) | EP2047505A4 (ko) |
JP (1) | JP5306196B2 (ko) |
KR (1) | KR101054709B1 (ko) |
CN (1) | CN101490825B (ko) |
TW (1) | TWI442512B (ko) |
WO (1) | WO2008008758A2 (ko) |
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FR2941324B1 (fr) * | 2009-01-22 | 2011-04-29 | Soitec Silicon On Insulator | Procede de dissolution de la couche d'oxyde dans la couronne d'une structure de type semi-conducteur sur isolant. |
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2006
- 2006-07-11 US US11/456,721 patent/US7396757B2/en not_active Expired - Fee Related
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2007
- 2007-06-29 TW TW096123868A patent/TWI442512B/zh not_active IP Right Cessation
- 2007-07-10 CN CN2007800262888A patent/CN101490825B/zh not_active Expired - Fee Related
- 2007-07-10 WO PCT/US2007/073128 patent/WO2008008758A2/en active Application Filing
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Also Published As
Publication number | Publication date |
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KR101054709B1 (ko) | 2011-08-05 |
TW200810020A (en) | 2008-02-16 |
TWI442512B (zh) | 2014-06-21 |
JP2009544156A (ja) | 2009-12-10 |
US20080217731A1 (en) | 2008-09-11 |
JP5306196B2 (ja) | 2013-10-02 |
EP2047505A2 (en) | 2009-04-15 |
US7396757B2 (en) | 2008-07-08 |
EP2047505A4 (en) | 2011-10-05 |
CN101490825A (zh) | 2009-07-22 |
CN101490825B (zh) | 2012-07-04 |
WO2008008758A3 (en) | 2008-05-08 |
US20080014731A1 (en) | 2008-01-17 |
US7595554B2 (en) | 2009-09-29 |
WO2008008758A2 (en) | 2008-01-17 |
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