CN1200867A - 高导热性复合磁体 - Google Patents
高导热性复合磁体 Download PDFInfo
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Abstract
在有机粘结剂中分散软磁粉末而制成的具有电磁干扰抑制效果的复合磁体中,在有机粘结剂中再分散导热性良好的粉末,提供导热性优异的复合磁体。此复合磁体可以兼用做电子仪器的散热片。而且,可以构成具有电磁干扰抑制效果的散热装置。作为有机粘结剂列举出热塑性聚酰亚胺和液晶聚合物,作为导热性良好的粉末列举出Al2O3、AlN、立方晶BN、绝缘性SiC、和导热性增强材(聚酰亚胺(カプトソ))。
Description
本发明涉及在有机粘结剂中混合有软磁粉末的复合磁体,特别是涉及导热性优异的复合磁体。
为了抑制因不需要的电磁波的干扰而产生的电磁波故障,使用电磁干扰抑制体。
通常,为了阻断外部的不需要的电磁波向电子仪器的侵入,需要用导体对电子仪器进行屏蔽。但是,利用导体阻断电磁波,由于存在电磁波的反射,所以会反射来自电子仪器内部的某些部件的辐射波,作为二次噪声对同一电子仪器内的其它部件施加不利影响。特别是,随着近年来仪器小型化、使用频率的高频化,由外部电磁波产生的故障和由内部电磁波产生的二次噪声的问题日益严重。
特开平7-212079公开了用某种软磁性体的复数导磁率产生的高频吸收,可以抑制不需要的电磁波的障碍的复合磁体。此复合磁体是由在有机粘结剂中混合软磁粉末而制成的复合磁性片构成的。
这种复合磁性片可以原样使用,但是利用与导电片层叠的构造,由复合磁性片吸收到达的电磁波,利用导电片使通过复合磁性片的电磁波反射到复合磁性片中,这样可以抑制不需要的电磁波的干扰。
这种电磁干扰抑制体配置在例如电子仪器表面或者电子仪器中的易受外部电磁波影响的电子部件的周围。或者,配置在分别安装电子部件而且相互隔开相对配置的2块印刷电路板之间来使用。
但是,存在如下问题,在形成复合磁体时使用的有机粘结剂,由于容易受热影响产生变形、劣化等,不能在发热大的电子部件中密封使用。
而且,由于有机粘结剂的导热性差,所以存在妨碍发热量大的电子部件的散热的问题。
故此,本发明的目的在于提供一种不易受热影响的高导热性复合磁体以及采用该复合磁体的电磁干扰抑制体。
本发明的另一目的在于提供一种采用高导热性复合磁体的散热片及散热装置。
如权利要求1所记载的,本发明提供一种具有高导热性的复合磁体,在有机粘结剂中分散软磁粉末而制成,其特征在于,在该有机粘结剂中再分散导热性粉末。
作为导热性良好的粉末,如权利要求2所记载的,可列举出选自氧化铝(Al2O3)粉末、氮化铝(AlN)粉末、立方晶氮化硼(BN)粉末、绝缘性碳化硅(SIC)粉末和导热性增强材(聚酰亚胺(カプトン))粉末的组中的至少一种粉末。
作为有机粘结剂,如权利要求3所记载的,以玻璃转变温度为120℃以上的热塑性树脂为好,典型地,如权利要求4所记载的,可列举热塑性聚酰亚胺和液晶聚合物。
这种高导热性的复合磁体,如权利要求5所记载的,可以与导电性支承体层叠、作为电磁干扰抑制体使用。
而且,这种高导热性的复合磁体,如权利要求6所记载的,可以兼用做电子仪器的散热片,如权利要求7所记载的,可以构成兼做电磁干扰抑制的散热装置。
而且,根据本发明可以提供权利要求8和9记载的耐热性的复合磁体。
图1是展示本发明的复合磁体的实施例的概略剖面图。
图2是展示使用图1的复合磁体的电磁干扰抑制体的概略剖面图。
图3是采用图1所示复合磁体作为散热片、同时安装在散热装置和IC组件上的电子装置的侧视图。
图4展示了同时安装图1所示复合磁体制成的散热片和散热装置的IC组件,(a)图是其侧视图,(b)是散热片的平面图。
图5是展示同时安装图1所示由复合磁体制成的散热片和利用热管的散热器的IC组件的侧视图。
图6是展示同时安装图1所示复合磁体的散热片和散热装置的开关装置的透视图。
图7是展示安装图1所示由复合磁体制成的散热装置的开关装置的透视图。
图8(a)、(b)和(c)是使用图1所示复合磁体作为IC组件用的散热装置的不同构成的透视图。
图9是安装了图8(c)的散热装置的IC组件的侧视图。
图10(a)和(b)分别是安装其它类型的散热装置的IC组件的侧视图和散热装置的平面图。
图11是评价本发明的复合磁体的电气特性、电磁干扰抑制性、散热特性用的样品的剖面图,(a)、(b)和(c)分别展示了仅由复合磁体制成的样品、此复合磁体与导电体层叠的样品、和不使用此复合磁体的对比样品。
图12是展示用于测试图11的各样品的透过电平的评价系统的概略图。
图13是展示用于测试图11的各样品的电磁结合水平的评价系统的概略图。
参照图1,本发明的复合磁体1,在有机粘结剂2中分散用于吸收电磁波的扁平状(或针状)的软磁粉末3,同时分散导热性粉末4。
在有机粘结剂2中,可以使用聚乙烯系树脂、聚酯系树脂、聚苯乙烯系树脂、聚氯乙烯基系树脂、聚乙烯醇缩丁醛树脂、聚氨酯树脂、纤维素系树脂、硝基丁二稀系橡胶等热塑性树脂或者其共聚合体、环氧树脂、苯酚树脂、酰胺系树脂、酰亚胺系树脂等。
为了使复合磁体1获得高的耐热性,作为有机粘结剂2,以使用玻璃转变温度为120℃以上的热塑性树脂为好。例如,以采用选自热塑性聚酰亚胺、液晶聚合物中的至少一种为好。
软磁粉末3可以使用Fe-Al-Si系合金(商标:センダスト)、Fe-Ni系合金(玻莫合金)。粉末的长宽比应充分大(约10∶1以上)。
而且,导热性粉末4可以使用氧化铝(Al2O3)、氮化铝(AlN)、立方晶氮化硼(BN)、氧化铍(BeO)、绝缘性碳化硅(SiC)、或者导热性增强材(聚酰亚胺(カプトン))等。
而且,采用玻璃转变温度在120℃以上的热塑性树脂,不使用导热性粉末的情况下,导热性低,但是由于获得耐热性优异的复合磁体,所以对于发热多的部件,为了除去不需要的电磁波的吸收,可以直接设置或者在附近配置。当然,通过与导电体层叠,可以在进行电磁波的反射的同时提高导热性。
参照图2,展示了采用图1的复合磁体1的电磁干扰抑制体10,此电磁干扰抑制体10具有复合磁体1在导电性支承体5的两面层叠的层叠构造。作为导电性支承体5,图中展示了采用由导电性纤维织物构成的情况的例子,但是也可以采用导电体薄板、网状导电体板、或者软磁金属板、网状软磁金属板、或者软磁金属纤维的织物构成的结构。而且,也可以是仅在导电性支承体5的一面设置复合磁体1的层的构造。
对于电磁干扰抑制体10的构造本身及其电磁干扰抑制作用,特开平7-212079号公报已有详细公开,所以本发明省略了其说明。
参照图3,在电路板11上装载作为有源元件的IC组件12。为了提高此IC组件12发热的散热,通过复合磁体1设置散热装置13。在此结构中,来自IC组件的热量通过导热性优异的复合磁体1向散热装置13传导散热。结果,有效地进行IC组件12的散热。即,复合磁体1作为散热片使用。当然,由于来自IC组件12的外部的电磁波和来自内部的电磁波,被复合磁体1吸收,所以防止了受外部电磁波的影响和向外部发射电磁波。
作为散热片可以使用图2的电磁干扰抑制体10,代替复合磁体1。为了表示这样情况,在图3中,把表示电磁干扰抑制体的参考标号10标在括号内并与表示复合磁体的参考标号1并列记载。
图4是图3的变形例。如同图(b)中的21所示,在图1的复合磁体1制成的散热片20中形成贯通孔21。从同图(a)中用15所示的散热装置向下延伸的多个销151贯通于该贯通孔21中。而且,作为散热片可以使用图2的电磁干扰抑制体10。
参照图5,在IC组件12上的图1的由复合磁体1构成的散热片或者块22上设置孔,形成散热器16的热管17贯装于此孔中的构造。在此构造中,来自IC组件的热量从散热片22通过热管17到达散热器16散热。
参照图6,对于开关元件18,展示了通过由图1的复合磁体1制成的散热片23,安装具有叶片的散热装置19的装置。
散热装置本身可以由复合磁体1构成。此例如图7所示。同图中,由复合磁体1构成的散热装置30直接安装在开关元件18上。
图8展示了由复合磁体1构成的散热装置的各种形状。(a)图是具有单纯板形状的散热装置31,(b)图是具有在板两端设置凸缘的U字形状的散热装置32,(c)图是具有盘形状的散热装置33。这些散热装置不仅可以由复合磁体1构成,也可以采用图2的电磁干扰抑制体构成。
图9是展示利用粘结剂40在IC组件12上安装图8(c)的散热装置33的状态的侧视图。由此构成也可以有效地使IC组件12的发热有效地散热、同时阻止不需要的电磁波的发射和侵入。
图10是展示采用图1的复合磁体1或者图2的电磁干扰抑制体10的散热装置的其它构造的图。如该图(b)所示,此散热装置34的剖面呈U字形状,是从表面到里面具有多个贯通孔35的构造。由此构造可以利用贯通孔35促进来自IC组件12的发热的散热。
以下,对本发明的复合磁体、以及该复合磁体和导体的层叠构造体的例子,列举其特性。
首先,由表1的配合比的软磁粉术、有机粘结剂和导热性粉末构成的复合磁体,制备由复合磁体构成的图11(a)所示的板状样品1。其大小是3.8×10.2(cm)。
亦即,首先利用捏合机对施加耦合处理的软磁粉末、有机粘结剂和导热性粉末进行混练,用平行配置的轧辊压延,制备厚0.5mm的片状复合磁体。然后,把2张所得的片合并,获得图11(a)所示构造的厚1mm的样品I。
表1
物质名 | 配合比(重量份) | |
软磁粉末 | Fe-AL-Si合金平均粒径:35μm长宽比:>5 | 80 |
耦合处理剂 | 钛酸盐系 | 0.8 |
有机粘结剂 | 聚氯乙烯 | 15 |
导热性粉末 | Al2O3 | 5 |
采用振动样品型磁强计和扫描型电子显微镜分析所得样品I,发现易磁化轴和磁性颗粒的排列方向都在该层的面内方向。
而且,这里所用的软磁粉末在O2分压20%的N2-O2混合气体气氛中气相氧化,在Ar气氛中、650℃下进行退火处理,所以在表面形成氧化表膜。
将以上所得的复合磁体的片1和铜薄板50层叠,制备图11(b)所示构造的样品II。亦即,用复合磁体1的片夹在厚0.18mm的极薄的铜板50的两侧进行层叠,用轧辊压延,使整体厚1mm。
而且,作为比较例,制备图11(c)的构造的样品III。亦即,在厚0.18mm的极薄铜板50的两侧,层叠由聚氟化乙烯制成的绝缘体51的片,整体厚度为0.3mm。
然后,对于样品I~III评价其表面电阻率、透过衰减量、结合衰减量和散热量。
在透过衰减量和结合衰减量的测试中,如图12和13所示,采用的装置是在电磁波源用发生器61和电磁场强度检测器62分别连接电磁波发射用微型环形天线63和电磁场接收用微型环形天线64。如图12所示,在电磁波发射用微型环形天线63和电磁场接收用微型环形天线64之间配置样品65,测试透过衰减量。
另一方面,如图13所示,在样品65的同一面电磁波发射用微型环形天线63和电磁场接收用微型环形天线64对置,测试结合衰减量。
在电磁场强度检测器62连接图中未示出的频谱分析仪。在100~1000MHz的频率下,以不存在样品65的状态的电磁场强度作为标准进行测试。
采用硅系导热性粘结带(太阳金网社制造的サ-ムアタツテ),把样品I~III粘结在半导体元件上,以不存在样品的状态作为标准,把散热量表示为与样品温度的温度差(ΔT)。此温度差的数值大,表示散热效果好。测试条件是在不存在空气流动(吹气)的状态下,周围温度为21~24℃。
测试结果如表2所示。
表2
厚度(mm) | 表面电阻率(Ω) | 透过衰减量(dB) | 结合衰减量(dB) | 温度ΔT(℃) | |
样品I | 1 | 1×108 | 6~12 | 8~10 | 20 |
样品II | 1 | 1×108 | 40~55 | 2~3 | 45 |
样品III | 0.3 | 1×1014 | 40~55 | -8~-10 | 24 |
从表2可知,本发明的复合磁体及其与导电体的层叠构造(样品I和II),与对比样品(样品III)相比,获得了同等以上的特性。而且,样品I与II相比,样品I在结合衰减量上优异,样品II在散热量上优异。
根据本发明获得了耐热性和导热性良好、具有电磁波吸收能力的复合磁体,所以作为电子部件和装置的散热片和/或散热装置使用,可以一面阻止不需要的电磁波的发射和侵入,一面促进散热。
Claims (9)
1.一种具有高导热性的复合磁体,在有机粘结剂中分散软磁粉末而制成,其特征在于,在该有机粘结剂中再分散导热性粉末。
2.根据权利要求1的复合磁体,其特征在于,所述导热性粉末是选自氧化铝(Al2O3)粉末、氮化铝(AlN)粉末、立方晶氮化硼(BN)粉末、绝缘性碳化硅(SiC)粉末、和导热性增强材(聚酰亚胺(カプトン))粉末中的至少一种粉末。
3.根据权利要求1或2的复合磁体,其特征在于,所述有机粘结剂是玻璃转变温度为120℃以上的热塑性树脂。
4.根据权利要求3的复合磁体,其特征在于,所述有机粘结剂是热塑性聚酰亚胺和液晶聚合物中的至少一种。
5.一种电磁干扰抑制体,其特征在于,在导电性支承体的两面层叠权利要求1~4中任一项的复合磁体的片。
6.一种散热片,其特征在于,由权利要求1~4中任一项所记载的复合磁体构成。
7.一种散热装置,其特征在于,由权利要求1~4中任一项所记载的复合磁体构成。
8.一种耐热性复合磁体,在有机粘结剂中分散软磁粉末而制成,其特征在于,所述有机粘结剂是玻璃转变温度为120℃以上的热塑性树脂。
9.根据权利要求8的复合磁体,其特征在于,所述有机粘结剂是热塑性聚酰亚胺和液晶聚合物中的至少一种。
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JP26543896A JP3881730B2 (ja) | 1996-09-12 | 1996-09-12 | ヒートシンク及び放熱シート |
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Cited By (9)
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CN1333412C (zh) * | 2002-08-20 | 2007-08-22 | 富士施乐株式会社 | 磁芯和磁场屏蔽部件及线圈、变压器、电设备和照相装置 |
CN100360001C (zh) * | 2001-11-09 | 2008-01-02 | Tdk株式会社 | 复合磁性体、片状物品的制法、电磁波吸收片材及其制法 |
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Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001069693A (ja) * | 1999-08-26 | 2001-03-16 | Honda Motor Co Ltd | 回転電機 |
JP2001126910A (ja) * | 1999-10-25 | 2001-05-11 | Tokin Corp | 複合磁性体、複合磁性体シートおよびそれらの製造方法 |
WO2001065901A2 (en) | 2000-03-03 | 2001-09-07 | Sony Computer Entertainment Inc. | Electronic device and shield |
JP4165045B2 (ja) * | 2000-09-19 | 2008-10-15 | 松下電器産業株式会社 | 電子機器 |
US6498558B1 (en) | 2001-05-08 | 2002-12-24 | Kelsey-Hayes Company | Solenoid valve coil having an integrated bobbin and flux ring assembly |
JP2002374092A (ja) | 2001-06-15 | 2002-12-26 | Polymatech Co Ltd | 放熱性電波吸収体 |
GB2382469A (en) * | 2001-11-23 | 2003-05-28 | Marconi Optical Components Ltd | Shielding for electromagnetic interference |
US6903647B2 (en) | 2002-05-08 | 2005-06-07 | Kelsey-Hayes Company | Solenoid valve coil having an integrated bobbin and flux ring assembly |
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US7371471B2 (en) * | 2004-03-08 | 2008-05-13 | Nec Tokin Corporation | Electromagnetic noise suppressing thin film |
US20080012103A1 (en) * | 2006-07-13 | 2008-01-17 | Foster Robert H | Emi absorbing gap filling material |
JP5140302B2 (ja) * | 2007-03-29 | 2013-02-06 | ポリマテック株式会社 | 熱伝導性シート |
JP5324105B2 (ja) * | 2008-01-29 | 2013-10-23 | スリーエム イノベイティブ プロパティズ カンパニー | 構造化表面を有する感圧接着層を含む電磁干渉抑制シート |
US20110245413A1 (en) | 2010-03-31 | 2011-10-06 | Sumitomo Chemical Company, Limited | Liquid-crystalline polymer composition and molded article thereof |
JP2013115083A (ja) * | 2011-11-25 | 2013-06-10 | Fujitsu Semiconductor Ltd | 半導体装置及びその製造方法 |
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SG11201701537TA (en) * | 2014-09-08 | 2017-03-30 | Baker Hughes Inc | Systems and methods for constructing laminations for electric motors |
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KR101681409B1 (ko) * | 2015-04-16 | 2016-12-12 | 삼성전기주식회사 | 코일 전자부품 |
JP6645487B2 (ja) | 2017-10-30 | 2020-02-14 | セイコーエプソン株式会社 | プリント回路板 |
JP2020009974A (ja) * | 2018-07-11 | 2020-01-16 | 北川工業株式会社 | 熱伝導組成物 |
KR102542423B1 (ko) | 2020-09-23 | 2023-06-12 | 라이르드 테크놀로지스, 아이엔씨 | 열전도성 전자파 장해(emi) 흡수체 |
Family Cites Families (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4538151A (en) | 1982-03-31 | 1985-08-27 | Nippon Electric Co., Ltd. | Electro-magnetic wave absorbing material |
JPS5927596A (ja) * | 1982-08-04 | 1984-02-14 | 日本特殊陶業株式会社 | マイクロ波吸収体 |
US4543208A (en) * | 1982-12-27 | 1985-09-24 | Tokyo Shibaura Denki Kabushiki Kaisha | Magnetic core and method of producing the same |
JPS59132196A (ja) | 1983-01-18 | 1984-07-30 | 日立金属株式会社 | 電子回路 |
US4548862A (en) * | 1984-09-04 | 1985-10-22 | Minnesota Mining And Manufacturing Company | Flexible tape having bridges of electrically conductive particles extending across its pressure-sensitive adhesive layer |
JPS61284089A (ja) * | 1985-06-07 | 1986-12-15 | 内藤 喜之 | マイクロ波加熱装置用電磁波漏洩防止装置 |
JPH0640382B2 (ja) * | 1986-10-20 | 1994-05-25 | 富士写真フイルム株式会社 | 磁気記録媒体 |
JPH0210800A (ja) | 1988-06-29 | 1990-01-16 | Fujitsu Ltd | 放熱体 |
US5275880A (en) * | 1989-05-17 | 1994-01-04 | Minnesota Mining And Manufacturing Company | Microwave absorber for direct surface application |
DE3932882A1 (de) | 1989-10-02 | 1991-04-11 | Siemens Ag | Gut waermeleitender verbundwerkstoff |
JPH03292625A (ja) * | 1990-04-10 | 1991-12-24 | Fuji Photo Film Co Ltd | 磁気記録媒体の製造方法 |
JPH04188861A (ja) | 1990-11-22 | 1992-07-07 | Nippon Telegr & Teleph Corp <Ntt> | 電子回路パッケージ |
US5188907A (en) * | 1991-01-03 | 1993-02-23 | Konica Corporation | Magnetic recording medium |
JPH04266658A (ja) | 1991-02-21 | 1992-09-22 | Nissan Motor Co Ltd | 自動変速機の変速制御装置 |
JPH056851U (ja) | 1991-07-10 | 1993-01-29 | 沖電気工業株式会社 | ヒートシンク |
JPH0531294U (ja) | 1991-09-30 | 1993-04-23 | 日本電気株式会社 | プリント基板用ヒートシンク |
CA2080177C (en) * | 1992-01-02 | 1997-02-25 | Edward Allan Highum | Electro-magnetic shield and method for making the same |
US5512363A (en) * | 1992-02-13 | 1996-04-30 | Konica Corporation | Magnetic recording medium having a magnetic layer containing magnetic powder and an underlayer containing two kinds of non magnetic powder |
JPH069195U (ja) | 1992-07-03 | 1994-02-04 | 富士通株式会社 | 放熱構造 |
JPH0722600U (ja) | 1992-12-11 | 1995-04-21 | 日本ケミコン株式会社 | シールドケース |
JPH0810730B2 (ja) | 1993-02-24 | 1996-01-31 | 日本電気株式会社 | パッケージのシールド構造 |
JPH0745758A (ja) | 1993-08-03 | 1995-02-14 | Akuteii:Kk | ヒートシンクおよびその製造方法 |
DE4329155A1 (de) * | 1993-08-30 | 1995-03-02 | Bloesch W Ag | Magnetfeldkathode |
JPH07122824A (ja) | 1993-10-22 | 1995-05-12 | Mitsui Toatsu Chem Inc | 電子回路パッケージ |
JPH07153877A (ja) | 1993-11-29 | 1995-06-16 | Hitachi Ltd | 発熱体の冷却装置 |
JP3528255B2 (ja) | 1994-08-16 | 2004-05-17 | Necトーキン株式会社 | 混成集積回路素子及びその製造方法 |
JP3401650B2 (ja) | 1994-01-20 | 2003-04-28 | エヌイーシートーキン株式会社 | 電磁波干渉抑制体 |
FI117224B (fi) | 1994-01-20 | 2006-07-31 | Nec Tokin Corp | Sähkömagneettinen häiriönpoistokappale, ja sitä soveltavat elektroninen laite ja hybridimikropiirielementti |
JPH07335793A (ja) | 1994-06-06 | 1995-12-22 | Fuji Electric Co Ltd | ヒートシンク |
JP3505825B2 (ja) | 1994-11-28 | 2004-03-15 | 三菱アルミニウム株式会社 | ろう付け後に高い疲労強度を保持するAl合金製熱交換器フィン材 |
JP3401107B2 (ja) | 1995-01-23 | 2003-04-28 | 松下電器産業株式会社 | パッケージicのモジュール |
JPH0951190A (ja) | 1995-08-07 | 1997-02-18 | Nippon Paint Co Ltd | 広帯域電磁波吸収材 |
-
1997
- 1997-09-09 CN CNB97191222XA patent/CN1179619C/zh not_active Expired - Fee Related
- 1997-09-09 EP EP97939237A patent/EP0866649B1/en not_active Expired - Lifetime
- 1997-09-09 US US09/074,012 patent/US6962753B1/en not_active Expired - Fee Related
- 1997-09-09 KR KR10-1998-0703424A patent/KR100510921B1/ko not_active IP Right Cessation
- 1997-09-09 DE DE1997627207 patent/DE69727207T2/de not_active Expired - Lifetime
- 1997-09-09 TW TW086113017A patent/TW345667B/zh not_active IP Right Cessation
- 1997-09-09 WO PCT/JP1997/003175 patent/WO1998010632A1/ja active IP Right Grant
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CN100360001C (zh) * | 2001-11-09 | 2008-01-02 | Tdk株式会社 | 复合磁性体、片状物品的制法、电磁波吸收片材及其制法 |
CN1333412C (zh) * | 2002-08-20 | 2007-08-22 | 富士施乐株式会社 | 磁芯和磁场屏蔽部件及线圈、变压器、电设备和照相装置 |
CN104694086A (zh) * | 2013-12-04 | 2015-06-10 | 苏州环明电子科技有限公司 | 一种新型散热材料的配方及其制备方法 |
CN106165559A (zh) * | 2014-03-25 | 2016-11-23 | 乐金华奥斯有限公司 | 电磁波屏蔽片及其制备方法 |
CN107207950B (zh) * | 2015-02-06 | 2021-05-14 | 莱尔德电子材料(上海)有限公司 | 具有碳化硅的导热电磁干扰(emi)吸收剂 |
CN107207950A (zh) * | 2015-02-06 | 2017-09-26 | 莱尔德技术股份有限公司 | 具有碳化硅的导热电磁干扰(emi)吸收剂 |
CN107484400A (zh) * | 2017-03-03 | 2017-12-15 | 倪进焕 | 一种具有高导热散热及吸波功能的复合材料及其制备方法和用途 |
CN108242312A (zh) * | 2017-12-15 | 2018-07-03 | 郑州轻工业学院 | 一种铁基软磁复合材料及其制备方法 |
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CN110911114A (zh) * | 2019-11-29 | 2020-03-24 | 横店集团东磁股份有限公司 | 一种高导热无线充电接收端用复合隔磁片及其制备方法 |
CN110911114B (zh) * | 2019-11-29 | 2020-12-22 | 横店集团东磁股份有限公司 | 一种高导热无线充电接收端用复合隔磁片及其制备方法 |
Also Published As
Publication number | Publication date |
---|---|
KR100510921B1 (ko) | 2005-10-25 |
CN1179619C (zh) | 2004-12-08 |
US6962753B1 (en) | 2005-11-08 |
KR20000064349A (ko) | 2000-11-06 |
TW345667B (en) | 1998-11-21 |
DE69727207T2 (de) | 2004-11-25 |
EP0866649A4 (en) | 1999-12-15 |
EP0866649B1 (en) | 2004-01-14 |
EP0866649A1 (en) | 1998-09-23 |
DE69727207D1 (de) | 2004-02-19 |
WO1998010632A1 (en) | 1998-03-12 |
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