CN1194059A - 用于粘合电子器件的可变形基片部件 - Google Patents

用于粘合电子器件的可变形基片部件 Download PDF

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Publication number
CN1194059A
CN1194059A CN96196568A CN96196568A CN1194059A CN 1194059 A CN1194059 A CN 1194059A CN 96196568 A CN96196568 A CN 96196568A CN 96196568 A CN96196568 A CN 96196568A CN 1194059 A CN1194059 A CN 1194059A
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Prior art keywords
substrate
adhesive
bonding
lines
circuit
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CN96196568A
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English (en)
Chinese (zh)
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彼得·B·霍格通
肯尼斯·E·卡尔森
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3M Co
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Minnesota Mining and Manufacturing Co
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Publication of CN1194059A publication Critical patent/CN1194059A/zh
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    • Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y10T428/2804—Next to metal

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Wire Bonding (AREA)
  • Laminated Bodies (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
CN96196568A 1995-08-29 1996-08-01 用于粘合电子器件的可变形基片部件 Pending CN1194059A (zh)

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US5700398A (en) * 1994-12-14 1997-12-23 International Business Machines Corporation Composition containing a polymer and conductive filler and use thereof
JPH1041694A (ja) * 1996-07-25 1998-02-13 Sharp Corp 半導体素子の基板実装構造及びその実装方法
JP3928753B2 (ja) * 1996-08-06 2007-06-13 日立化成工業株式会社 マルチチップ実装法、および接着剤付チップの製造方法
WO1998015593A1 (en) * 1996-10-08 1998-04-16 Fibercote Industries, Inc. Sheet material for core support
JPH10270496A (ja) * 1997-03-27 1998-10-09 Hitachi Ltd 電子装置、情報処理装置、半導体装置並びに半導体チップの実装方法
WO1999000842A1 (fr) * 1997-06-26 1999-01-07 Hitachi Chemical Company, Ltd. Substrat pour montage de plaquettes a semi-conducteur
US6297559B1 (en) 1997-07-10 2001-10-02 International Business Machines Corporation Structure, materials, and applications of ball grid array interconnections
US6337522B1 (en) * 1997-07-10 2002-01-08 International Business Machines Corporation Structure employing electrically conductive adhesives
US6120885A (en) 1997-07-10 2000-09-19 International Business Machines Corporation Structure, materials, and methods for socketable ball grid
JP3625646B2 (ja) 1998-03-23 2005-03-02 東レエンジニアリング株式会社 フリップチップ実装方法
JP3535746B2 (ja) * 1998-08-20 2004-06-07 ソニーケミカル株式会社 フレキシブル基板製造方法
US6840430B2 (en) * 1998-07-30 2005-01-11 Sony Chemicals, Corp. Board pieces, flexible wiring boards and processes for manufacturing flexible wiring boards
US6100114A (en) * 1998-08-10 2000-08-08 International Business Machines Corporation Encapsulation of solder bumps and solder connections
US6189208B1 (en) 1998-09-11 2001-02-20 Polymer Flip Chip Corp. Flip chip mounting technique
US6535393B2 (en) * 1998-12-04 2003-03-18 Micron Technology, Inc. Electrical device allowing for increased device densities
US6274224B1 (en) 1999-02-01 2001-08-14 3M Innovative Properties Company Passive electrical article, circuit articles thereof, and circuit articles comprising a passive electrical article
US6410415B1 (en) 1999-03-23 2002-06-25 Polymer Flip Chip Corporation Flip chip mounting technique
JP2001031929A (ja) * 1999-07-21 2001-02-06 Sony Chem Corp 接続構造体
US6519842B2 (en) * 1999-12-10 2003-02-18 Ebara Corporation Method for mounting semiconductor device
US20030009876A1 (en) * 2000-01-14 2003-01-16 Akira Yamauchi Method and device for chip mounting
WO2001056340A1 (en) * 2000-01-28 2001-08-02 Sony Chemicals Corp. Substrate material piece, flexible circuit board, and method of manufacturing the flexible circuit board
US6584670B2 (en) * 2000-02-21 2003-07-01 Larry J. Costa Electrical terminal implementation device
US10388626B2 (en) * 2000-03-10 2019-08-20 STATS ChipPAC Pte. Ltd. Semiconductor device and method of forming flipchip interconnect structure
DE60141391D1 (de) * 2000-03-10 2010-04-08 Chippac Inc Flipchip-Verbindungsstruktur und dessen Herstellungsverfahren
DE10014300A1 (de) * 2000-03-23 2001-10-04 Infineon Technologies Ag Halbleiterbauelement und Verfahren zu dessen Herstellung
US6423905B1 (en) * 2000-05-01 2002-07-23 International Business Machines Corporation Printed wiring board with improved plated through hole fatigue life
US6512183B2 (en) * 2000-10-10 2003-01-28 Matsushita Electric Industrial Co., Ltd. Electronic component mounted member and repair method thereof
US20040135265A1 (en) * 2001-02-13 2004-07-15 Elke Zakel Contacting microchips by means of pressure
JP2004520722A (ja) * 2001-05-17 2004-07-08 コーニンクレッカ　フィリップス　エレクトロニクス　エヌ　ヴィ 基体及び当該基体に付属するチップを有する製品
DE10124770C1 (de) * 2001-05-21 2002-10-17 Infineon Technologies Ag Verfahren zur Kontaktierung eines elektrischen Bauelementes mit einem eine Leiterstruktur aufweisenden Substrat
US6871395B2 (en) * 2001-08-06 2005-03-29 Siemens Technology-To-Business Center, Llc. Methods for manufacturing a tactile sensor using an electrically conductive elastomer
JP4159778B2 (ja) * 2001-12-27 2008-10-01 三菱電機株式会社 Ｉｃパッケージ、光送信器及び光受信器
JP4045838B2 (ja) * 2002-04-12 2008-02-13 松下電器産業株式会社 部品装着管理方法
JP2004119430A (ja) * 2002-09-24 2004-04-15 Tadatomo Suga 接合装置および方法
US7176044B2 (en) * 2002-11-25 2007-02-13 Henkel Corporation B-stageable die attach adhesives
TWI228286B (en) * 2003-11-24 2005-02-21 Ind Tech Res Inst Bonding structure with buffer layer and method of forming the same
FR2875995B1 (fr) * 2004-09-24 2014-10-24 Oberthur Card Syst Sa Procede de montage d'un composant electronique sur un support, de preference mou, et entite electronique ainsi obtenue, telle q'un passeport
KR100757910B1 (ko) * 2006-07-06 2007-09-11 삼성전기주식회사 매립패턴기판 및 그 제조방법
US8201325B2 (en) * 2007-11-22 2012-06-19 International Business Machines Corporation Method for producing an integrated device
JP5528169B2 (ja) * 2010-03-26 2014-06-25 東洋ゴム工業株式会社 研磨パッドおよびその製造方法、ならびに半導体デバイスの製造方法
US9472131B2 (en) * 2012-11-02 2016-10-18 Apple Inc. Testing of integrated circuit to substrate joints
JP6380069B2 (ja) * 2014-12-11 2018-08-29 住友電気工業株式会社 光送信モジュール
TWI696300B (zh) 2016-03-15 2020-06-11 晶元光電股份有限公司 半導體裝置及其製造方法
TWI581417B (zh) * 2016-04-11 2017-05-01 友達光電股份有限公司 發光裝置及其製造方法
TWI877132B (zh) * 2019-02-04 2025-03-21 日商索尼半導體解決方案公司 電子裝置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2610539A1 (de) * 1976-03-12 1977-09-22 Siemens Ag Halbleiterbauelement mit elektrischen kontakten und verfahren zur herstellung solcher kontakte
JPS59195837A (ja) * 1983-04-21 1984-11-07 Sharp Corp Ｌｓｉチツプボンデイング方法
US4643935A (en) * 1986-01-21 1987-02-17 Burroughs Corporation Epoxy-glass integrated circuit package having bonding pads in a stepped cavity
US4749120A (en) * 1986-12-18 1988-06-07 Matsushita Electric Industrial Co., Ltd. Method of connecting a semiconductor device to a wiring board
US5084355A (en) * 1988-04-13 1992-01-28 Hitachi, Ltd. Laminar structure comprising organic material and inorganic material
US5001542A (en) * 1988-12-05 1991-03-19 Hitachi Chemical Company Composition for circuit connection, method for connection using the same, and connected structure of semiconductor chips
US5074947A (en) * 1989-12-18 1991-12-24 Epoxy Technology, Inc. Flip chip technology using electrically conductive polymers and dielectrics
US5121190A (en) * 1990-03-14 1992-06-09 International Business Machines Corp. Solder interconnection structure on organic substrates
US5270260A (en) * 1990-08-23 1993-12-14 Siemens Aktiengesellschaft Method and apparatus for connecting a semiconductor chip to a carrier system
US5261156A (en) * 1991-02-28 1993-11-16 Semiconductor Energy Laboratory Co., Ltd. Method of electrically connecting an integrated circuit to an electric device
US5258577A (en) * 1991-11-22 1993-11-02 Clements James R Die mounting with uniaxial conductive adhesive

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WO1997008749A1 (en) 1997-03-06
EP0847594B1 (en) 2002-07-17
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US5714252A (en) 1998-02-03
TW349269B (en) 1999-01-01

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