CN1653484A - Rfid标签 - Google Patents

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Publication number
CN1653484A
CN1653484A CNA038107368A CN03810736A CN1653484A CN 1653484 A CN1653484 A CN 1653484A CN A038107368 A CNA038107368 A CN A038107368A CN 03810736 A CN03810736 A CN 03810736A CN 1653484 A CN1653484 A CN 1653484A
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CN
China
Prior art keywords
antenna
semiconductor devices
rfid label
terminal
mentioned
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA038107368A
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English (en)
Inventor
大关良雄
中野朝雄
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Hitachi Ltd
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Hitachi Ltd
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Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of CN1653484A publication Critical patent/CN1653484A/zh
Pending legal-status Critical Current

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    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
    • G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
    • G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
    • G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
    • G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
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    • H01—ELECTRIC ELEMENTS
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
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    • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
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    • G06—COMPUTING; CALCULATING OR COUNTING
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    • G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
    • G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
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    • G06K19/077—Constructional details, e.g. mounting of circuits in the carrier
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    • G06K19/077—Constructional details, e.g. mounting of circuits in the carrier
    • G06K19/07749—Constructional details, e.g. mounting of circuits in the carrier the record carrier being capable of non-contact communication, e.g. constructional details of the antenna of a non-contact smart card
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  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
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  • Wire Bonding (AREA)
  • Credit Cards Or The Like (AREA)
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Abstract

提供一种RFID标签，该RFID标签包括金属制的天线、和端子与该天线接合的半导体器件，通过采用通过金属接合把比0.5mm见方还小的半导体器件与该天线接合起来的结构，能够实现连接不合格少的效果。

Description

RFID标签
技术领域
本发明涉及RFID标签。
背景技术
一般半导体器件的安装技术大致可分类为引线键合和无线键合。
引线键合由于以在半导体器件的端子与布线基板的焊区之间画弧的方式进行键合，所以不是适于实现RFID标签薄型化的技术。
另一方面，无线键合由于半导体器件的端子与布线基板的距离短、可以直线地进行连接，所以适于RFID标签的薄型化。
该无线键合中，有接触连接和金属连接。
作为接触连接的一个例子，特开平2001-24568号公报中描述了使用各向异性导电粘接剂(ACF，Anisometric Conductive Film)的安装方式(下面，称为ACF连接方式)。
按照该文献，以ACF连接方式把IC与天线之间接合起来，由此可以省略引线键合或利用树脂的模压，因此适于卡的薄型化。
发明内容
发明人开发了小于等于0.5mm见方的RFID标签用的半导体器件。因此，为了把该半导体器件安装到天线上，发明人研究了使用在上述无线IC卡中采用的ACF安装方式的情况。
实际试制的结果是，有时在天线与半导体器件之间产生连接不合格。
即，在无线IC卡中采用的约几mm见方的半导体器件的安装技术，不能原原本本地应用于小于等于1mm见方，特别是小于等于0.5mm见方(换算成面积，为小于等于0.25mm2)的半导体器件的安装中，显然需要研究其它参量。
因此，本发明的目的在于，提高安装了小于等于0.5mm见方的半导体器件的RFID标签的连接可靠性。
该课题可通过下述结构来解决。
如果作成通过金属接合把比0.5mm见方小的半导体器件与金属制的天线接合起来的结构，则也可以像接触接合那样不担心硬化收缩力和热收缩力，所以即使采用单位面积的端子面积大的半导体器件，也很难产生连接不合格。
此外，从实现无铅化、短间歇化的观点出发，作为该金属接合由金与锡的合金构成，是优选的。
为了实现这些结构，如果使用在端子上形成有金凸点的比0.5mm见方小的半导体器件、以及在该铜箔上形成有镀锡的天线，就能够抑制高价的金的用量，所以是优选的。
从下面的与附图有关的本发明实施例的描述，本发明的其它目的、特征和优点将会变得明显。
下面，用附图说明本发明的RFID标签。
附图说明
图1为RFID标签的俯视图和剖面图。
图2为半导体器件与天线的接合部的放大透视图。
图3示出RFID标签的与连接电阻值有关的特性。
图4为采用ACF方式的安装结构。
图5示出以ACF方式接合时RFID标签的与连接电阻值有关的特性。
图6示出ACF方式、和金与锡的金属接合方式的连接不合格率。
图7示出有底填料时和无底填料时的强度。
具体实施方式
(实施例1)
图1示出RFID标签的俯视图和剖面图，图2示出半导体器件与天线的接合部的放大透明图。
如图1所示，本方式的RFID标签，是在天线上具有ID发送功能的、以倒装芯片方式安装的半导体器件，标签的全部厚度为0.13mm。
此外，对半导体器件进行背研磨使其厚度为0.06mm，把外形作成0.5mm见方。此外，通过用直接布线与半导体器件内部的集成电路连接的两个输入输出端子、与半导体器件内部的集成电路未直接连接的两个连接用端子共四个端子，以半导体器件的重心为中心每一个错开90°依次形成输入输出端子、连接用端子、输入输出端子、连接用端子(输入输出端子互相间、连接用端子互相间相对配置)。此外，该半导体器件是通过天线接收2.45GHz波段的微波，以从这样的微波产生的自整流作为电力源而工作的半导体器件，具有以接收到该微波信号作为触发，把存储在内装的存储装置中的128比特的数据变换成发送信号并送回到天线上的功能。
此外，关于天线，形成在聚酰亚胺带上的外缘上留出若干间隙的长度为56mm的铜箔，在安装半导体器件的天线的端部形成镀锡膜。
用金与锡的合金把该半导体器件的全部端子与天线的铜箔接合起来。
此外，在半导体器件的侧面、下表面与铜箔之间配置有底填料。
再有，由于为了确保接合的均衡已设置了连接用端子，所以也可以具有两个输入输出端子和一个连接用端子。
可通过下列工序来制造该结构。
工序1：通过用粘接剂在作为树脂膜的聚酰亚胺膜(聚酰亚胺带)的一个主平面上粘接铜箔而形成天线。在粘接了的铜箔上镀锡，作成连接焊盘(连接电极)。
工序2：接着，在半导体器件的全部端子上形成金凸点。
工序3：固定天线，使工序1中镀的锡成为最上层。进而，把半导体器件的端子面面向下方以使工序2中形成的金凸点与天线的锡成为面对面，进行天线与半导体器件的位置对准。
工序4：通过在以200MPa的压力从作为非端子面的半导体器件的上方向下方进行加压的同时，在150℃下加热1.5秒钟，进行临时固定。
工序5：进而，进行精度高的位置对准，在以200MPa的压力进行加压的同时，在280℃下加热3秒钟。由于通过该加热锡扩散到金中，所以半导体器件的端子与天线的铜箔成为由金锡合金构成的金属接合。
工序6：在半导体器件的下方形成底填料。
接着，使用图3，说明本方式的RFID标签的与连接电阻值有关的特性。
利用上述制造方法制造的RFID标签显示出图3(a)的特性。
85℃和85％RH的高温高湿试验的结果，在约350次循环中只产生了约10mΩ的连接电阻，由于约100mΩ才对发送特性造成影响，所以可以说这样的特性是良好的连接电阻。
-50℃～125℃、各30分钟的温度循环试验的结果，由于在350次循环中只产生了小于等于20mΩ的连接电阻，所以与高温高湿试验的结果一样，可以说是良好的连接电阻。
对于把上述制造工序4中的临时固定的温度定为225℃的场合，在进行温度循环试验时，由于在430次循环中也只产生了约10mΩ的连接电阻，所以与把临时固定的温度定为150℃时一样，能够作成良好的连接电阻。
这样，本方式的RFID标签，由于在小于等于0.5mm见方的半导体器件与天线的接合中采用了金属接合，所以能够按要求降低连接不合格的发生。
此外，在本结构中，作为进行接合的金属使用锡与金的合金。这样构成时，不仅能够实现无铅的RFID标签，而且即使作成窄间距，在操作间歇短的情况下也能够提高连接可靠性。
此外，不管输入输出端子和连接端子中的哪一种都采用这样的连接方法都能得到效果，但是，通过在两种端子中都采用该方法，可以一起进行回流。
此外，由于输入输出端子两者的功能相同，所以将其配置成在半导体器件的对角上对置，由此，成为可以180度逆向地进行接合。
此外，把天线的镀锡分成两个端子，即通过1个连接端子把1个输入输出端子与1个连接用端子这2个端子接合起来的结构，由此，成为即使多少有些转动偏移也能没有连接不合格的结构。此外，由于利用该结构时即使转动90度、270度也能进行接合，所以能更加容易地进行接合。
图7示出有底填料时和无底填料时的强度的差别。
如上所述，由于进行背研磨，本实施例的半导体器件的厚度减薄了。由于进行该背研磨，在半导体器件上产生小的微裂纹。可以看出，与无底填料时相比，在这样的结构中形成底填料时在来自外部的点压破坏方面增强两倍以上。
(比较例)
接着，作为比较例，说明利用作为接触接合方式的ACF方式进行了安装的情况。
图4示出采用ACF方式时的安装方式。
在透明的聚对苯二甲酸乙二酯膜(下面，称为PET膜)上粘接长度为56mm的铜箔而形成天线。
把ACF临时压接到已粘接的铜箔上。
在半导体器件上形成金凸点，以该金凸点与ACF对置的方式来配置半导体器件和天线并进行临时固定。
然后，再次进行精度高的位置对准，进行加压加热。通过该加压加热，ACF硬化而把金凸点与铜箔直接连接起来。
把用图4的方法制造的利用ACF方式进行接合时的高温高湿试验(85℃和85％RH)的结果，示于图5。
在安装了0.3mm见方的半导体器件时，在25个小时内产生几百mΩ的连接电阻。
此外，即使在安装了0.5mm见方的半导体器件时，在经过100个小时时也产生几百mΩ以上的连接电阻。这样，在小于等于0.5mm见方的半导体器件的安装中使用ACF方式时，产生了在现有的半导体器件中未产生的连接电阻的显著增加。
可以认为，这是由于，在通常的半导体器件中由于没有端子的区域也很多，所以即使端子的个数多也能够充分确保每一个端子的ACF面积，能够得到所希望的连接稳定性，但是，在构成本方式那样的RFID标签的小于等于0.5mm见方的半导体器件中，由于端子面积相对于装置面积变得非常大，所以每一个端子与ACF的粘接能力(热收缩力+硬化收缩力)降低，由此，与铜箔的连接稳定性降低了。
图6对ACF方式、和金与锡的金属接合方式的连接不合格率加以对比。
采用了ACF方式的RFID标签，在不到1个小时的期间内就开始出现连接不合格，在50个小时以内约85％不合格。
另一方面，在金锡连接方式中，在经过1300个小时以后还能够保持不合格率小于等于1％的良好的连接。
按照本发明，能够提供连接不合格少的RFID标签。
上面的描述是对实施例进行的，但是，本发明不限于此，在本发明的精神和所附的权利要求的范围内可以作出各种变更和修正，对本领域技术人员来说这是明显的。

Claims (8)

1.一种RFID标签，包括金属制的天线、和端子与该天线接合的半导体器件，其特征在于：
通过金属接合把比0.5mm见方还小的半导体器件与该天线接合起来。
2.根据权利要求1所述的RFID标签，其特征在于：
上述金属接合由金与锡的合金构成。
3.一种RFID标签，具有在高分子膜上粘接有铜箔的天线、和端子与该铜箔接合的半导体器件，其特征在于：
使用了在端子上形成有金凸点的比0.5mm见方还小的半导体器件；以及在该铜箔上形成有镀锡的天线。
4.根据权利要求1～3中的任一项所述的RFID标签，其特征在于：
上述端子包括输入输出端子。
5.根据权利要求4所述的RFID标签，其特征在于：
上述端子包括连接端子。
6.一种RFID标签，具有天线、和包括与该天线连接的两个输入输出端子的半导体器件，其特征在于：
上述半导体器件中的上述输入输出端子设置在半导体器件的对角位置上。
7.根据权利要求6所述的RFID标签，其特征在于：
上述半导体器件包括设置在另一个对角位置上的两个连接用端子。
8.根据权利要求7所述的RFID标签，其特征在于：
上述天线包括两个连接端子，
把该天线的一个连接端子与上述半导体器件的相邻的两个端子接合起来。
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