CN1174403A - 片式半导体封装及其制造方法 - Google Patents

片式半导体封装及其制造方法 Download PDF

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CN1174403A
CN1174403A CN97103780A CN97103780A CN1174403A CN 1174403 A CN1174403 A CN 1174403A CN 97103780 A CN97103780 A CN 97103780A CN 97103780 A CN97103780 A CN 97103780A CN 1174403 A CN1174403 A CN 1174403A
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chip
connecting line
conductive connecting
semiconductor
outer end
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CN1092841C (zh
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柳仲夏
车基本
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SK Hynix Inc
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LG Semicon Co Ltd
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Abstract

一种片式半导体封装,钝化膜形成于除芯片焊盘之外的半导体芯片上,PIQ膜形成于钝化膜上,导电连线内端分别与芯片焊盘垂直连接,用模制树脂密封除导电连线外端之外的整个半导体芯片,导电连线外端突出于模制树脂外,并成型为圆形外部小球。这种片式半导体封装使制造工艺变得更容易,封装尺寸变得更小,并可以缩短从芯片焊盘到外引线的电通道,因而可以改善电特性。

Description

片式半导体封装及其制造方法
本发明涉及一种片式半导体封装及其制造方法，特别涉及一种改进的片式半导体封装及其制造方法，通过在芯片焊盘与外部之间形成最短的电信号传输通道，能将半导体封装的尺寸减小到几乎为半导体芯片的尺寸，且容易制备多管脚封装，因而可以增强封装的电特性。
常规半导体封装结构中，半导体芯片固定接合于引线框的垫片上，导电连线电连接半导体芯片的焊盘和内引线，然后由模制树脂密封整个结构。最后按需要将外引线成形为一定形状。
图1是展示其外引线成形为字母“J”形的SOJ(J形引线小外形)半导体封装结构的剖面图。如该图所示，利用胶带2的粘结力将引线框的内引线3粘结在半导体芯片上，利用超声热压焊接导电连线4，以使形成于半导体芯片1上表面中心的芯片焊盘6与内引线3电连接。然后，用模制树脂6包围并模制除外引线7外的半导体芯片1和内引线3，再按用户的要求将外引线7成形。图1中外引线成形为“J”形引线。
然而，常规半导体封装的结构是利用引线框把电信号从形成于半导体芯片上的芯片焊盘6传输到半导体封装外的。由于封装尺寸比半导体芯片的尺寸要大，因而从芯片焊盘到外引线的电通道变长，电特性退化，很难制备多管脚半导体封装。
因此，为了克服上述利用引线框的常规半导体封装的缺点，已研制出了各种半导体封装，片式半导体封装就是其中的一种。
图2是展示作了局部剖切的PMEB(模塑延伸凸点)型片式半导体封装的透视图。如该图所示，形成金属布线图形13以使形成于半导体芯片11上的多个芯片焊盘12与内凸点键合焊盘17相连接，把其上表面粘接了胶带(未示出)的键合导电内凸点16键合到内凸点键合焊盘17上。然后，用模制树脂14包围并模制半导体芯片11，除去胶带，暴露内凸点16的上表面。把焊膏施加到内凸点16上，并把导电外焊料球15放于其上，然后通过红外再流焊工艺焊接外焊料球15和内凸点16，于是获得完成了的PMEB型片式半导体封装，对其的说明公布于日本MITSUBSHI公司所有的“SEMICON JAPAN 94’SYMPOSIUM”。
图3是图2中的凸点电极的剖面图。下面将详细说明常规PMEB型片式半导体封装。
如图3所示，在半导体芯片11的上表面上形成芯片焊盘12，并在除芯片焊盘12上表面外的半导体芯片11上形成保护芯片的钝化膜18，在芯片钝化膜18上形成金属布线图形13，金属布线图形13的一端与芯片焊盘12相连，其另一端与内凸点键合焊盘17相连。在除内凸点连接焊盘17外的上述结构上形成聚酰胺膜10，借助由Pb或Sn构成的焊料粘结剂20把内部凸点16焊接到这样暴露的内凸点连接焊盘17上。然后，用模制树脂14包围除内凸点16上表面外的整个表面，从而密封半导体芯片11，并把外部焊球15键合到内凸点16上，完成全部工艺。
如上所述，日本MITSUBSHI公司在“SEMICON JAPAN 94’SYMPOSIUM”上公布的PMEB型片式半导体封装的结构中，传输芯片12的电信号的小球连接图形通过分开的金属布线图形形成工艺形成(公布资料中的预组装工艺)。即，形成从半导体芯片11的芯片焊盘12到内凸点连接焊盘17的金属布线图形13，分别进行电连接，并把内凸点16键合到内凸点连接焊盘17上。用模制树脂14包围并密封上述整个结构，把用作外引线的外部焊球15键合到内凸点16上，从而最后获得完成的片式半导体封装。
在PMEB型片式半导体封装结构中，与常规半导体封装相比，整个半导体封装的尺寸相对于芯片尺寸来说较小，并具有较短的电通道，所以可以改善其电特性。但需要分开的形成金属布线图形工艺(公布资料中的预组装工艺)，就改善电特性来说，由于从半导体封装的芯片焊盘到外部焊球的电通道较长，所以可以说电特性不会有显著改善。
因此，本发明的目的在于使半导体封装的尺寸最小化，并使把电信号传输到外部的电通道最短，因而容易制备多管脚封装并增强电特性。
为了实现上述目的，本发明提供一种片式半导体封装，该封装中，钝化膜形成于除芯片焊盘外的半导体芯片上，PIQ膜(PolyimideIsoindoro Quinazorindion)形成于钝化膜上，导电连线的内端分别与芯片焊盘垂直相连，模制树脂密封除导电连线外端外的整个半导体芯片，导电连线外端突出于模制树脂外，并成形为圆形外部焊球。
利用超声热压焊连接半导体芯片的芯片焊盘和导电连线内端。并且，在外部焊球形成工艺中，利用电弧放电(但并不限于该方法)，可把导电连线外端形成所要求的圆形小球，也可以用焊头压导电连线外端，形成直型外引线。另外，可以保留导电连线的其它端，不对进行任何再处理，使它们突出于模制树脂外。
通过以下给出的具体说明和只是说明性的各附图，可以更充分地理解本发明，但本发明并不局限于此，其中：
图1是展示现有技术的SOJ半导体封装结构的剖面图；
图2是展示作了部分剖切的现有技术的PMEB(塑模延伸凸点)型片式半导体封装的透视图；
图3是展示图2中的现有技术的部分凸点电极的剖面图；
图4是展示根据本发明一个实施例的作了局部剖切的片式半导体封装的透视图；
图5是沿图4中的线A-A所取的剖面图；
图6是展示根据本发明另一个实施例的作了局部剖切的片式半导体封装的透视图；
图7是沿图6中的线B-B所取的剖面图；
图8是展示根据本发明又一个实施例的作了局部剖切的片式半导体封装的透视图；
图9是展示根据本发明再一个实施例的作了局部剖切的片式半导体封装的透视图；
图10是沿图8和9中的线C-C所取的剖面图；及
图11A-11C是根据本发明的制造片式半导体封装的方法的示图。
下面将结合各附图说明根据本发明的片式半导体封装。
图4是展示根据本发明一个实施例的作了局部剖切的片式半导体封装的透视图。如该图所示，半导体芯片21的多个芯片焊盘22与垂直立于其上的导电连线26的内端连接，用模制树脂23密封除导电连线26的外端之外的整个半导体芯片21。这里，由于芯片焊盘22纵向排列于半导体芯片21的边缘，每根导电连线26的内端与芯片焊盘22连接，所以突出于模制树脂23之外的所述外端也纵向排列于完成的封装的边缘。
图4是芯片焊盘22与导电连线26的连接结构示意图。参见图4所示的本发明的片式半导体封装，下面详细说明芯片焊盘22和导电连线26的连接结构和连接方法。
图5是沿图4中的线A-A所取的剖面图。如该图所示，芯片焊盘22形成于芯片21中，在除芯片焊盘22外的半导体芯片21上形成钝化膜27。在钝化膜27上形成由聚亚酰胺树脂构成的PIQ膜28。另外，每根导电连线26的内端与相应的一个芯片焊盘22连接，26与22通过超声热压焊接。这里，导电连线26的焊接于芯片焊盘22上的端部通过热压形成无规则的椭圆形的焊接球25。用模制树脂23包围并密封除导电连线26的外端外的整个半导体芯片21，用以保护半导体芯片21和导电连线26。这里，导电连线26的外端突出于模制树脂23之外，用作把电信号传输到芯片焊盘22和传输来自芯片焊盘22的电信号的外引线。
图6是根据本发明另一个实施例的作了局部剖切的片式半导体封装的透视图。如该图所示，导电连线26的内端与形成于半导体芯片21中的多个芯片焊盘中的相应一个焊盘分别连接，用模制树脂23密封除导电连线26外端之外的整个半导体芯片21。另外，导电连线26的外端突出于模制树脂23之外，由于受压而向半导体芯片21的中心部分弯曲，因而构成形外引线24。图7是沿图6中的线B-B所取的剖面图，更具体地示出了图6所示的本发明片式半导体封装的结构。
如该图所示，芯片焊盘22形成于半导体芯片21中，钝化膜27形成于除芯片焊盘22之外的半导体芯片21上，钝化膜27上形成有由聚亚酰胺树脂构成的PIQ膜28。导电连线26的内端与芯片焊盘22连接，导电连线26的内端与芯片焊盘22通过超声热压焊接。这里，焊接于芯片焊盘22上的导电连线26的内端通过热压形成不规则的椭圆形焊球25。然后，用模制树脂23包围除导电连线26的外端外的整个半导体芯片21，从而保护半导体芯片21、导电连线26的内端和芯片焊盘22的连接部分。
导电连线26的外端突出于模制树脂23之外，由于焊头29的热压而向下弯曲，指向半导体芯片21的中心部分，从而用作形外引线(未示出)或构成其上部与模制树脂23表面平行的“T”形外引线24。
图8是根据本发明又一个实施例的作了局部切除的片式半导体封装的透视图。如该图所示，用作外引线的外部小球24’与多个芯片焊盘22连接，用模制树脂23模制除圆形外部小球24’之外的整个半导体芯片21。这里，芯片焊盘22纵向排列于芯片21的边缘，因此与芯片焊盘22连接的外部小球24’也纵向排列于完成的封装的边缘。
图9是根据本发明再一个实施例的作了局部剖切的片式半导体封装的透视图。在示于图8的封装中，外部小球24’沿封装上表面的两边缘形成，但在图9中，外部小球24’沿封装的上表面的全部四个边缘形成，这是图8和9所示实施例的唯一不同点。
由于图8和9只是示意性地展示了芯片焊盘22和外部小球的连接结构，所以，下面将参照图10具体说明本发明的片式半导体封装的芯片焊盘22与外部小球24’的连接结构和连接方法。
图10是沿图8和9中的线C-C所取的剖面图。如该图所示，在半导体芯片21上形成芯片焊盘，在除芯片焊盘22外的半导体芯片21上形成钝化膜27，在钝化膜27上形成由聚亚酰胺树脂构成的PIQ膜28。另外，每根导电连线26的内端与相应的一个芯片焊盘22垂直连接，并通过超声热压焊接于其上。这里，导电连线26的焊接于芯片焊盘22上的内端通过热压成形为不规则的椭圆形焊球25。用模制树脂23包围除导电连线26的外端外的整个半导体芯片21，从而保护半导体芯片21、导电连线26的内端和芯片焊盘22的连接部分。然后，利用电弧放电把突出于模制树脂23之外的导电连线26的外端成形为圆形外部小球24’。这里，这样成形的外部小球24’用作把电信号传输到芯片焊盘和从芯片焊盘传输电信号的外引线。
如上所述，图4中所示的本发明片式半导体封装的实施例和图6中所示对图4中实例的改型之间仅仅构形不同，所述不同在于用作外引线的突出于模制树脂23之外的导电连线26外端的形状不同。作为参考，可以根据用途改变外引线的形状，而不仅限于本发明实施例中示例性的垂直状、
Figure A9710378000091
形或圆球形。
另外，图4中的用作外引线的垂直凸点型导电连线26、图6所示
Figure A9710378000092
形外引线24和图8所示的圆球形外引线24’的位置也可以根据形成于半导体芯片21上的多个芯片焊盘22的位置而改变，不限于上述实施例的位置。
此后，将结合图11A-11说明制造图1-10所示本发明的片式半导体封装的方法。
首先，制备模具30，如图11A所示。模具30具多个于其中放置半导体芯片21的凹槽31，和形成于凹槽31之间的模具30上表面上的金属板32。多根导电连线26的内端连接在金属板32的上表面上。
半导体芯片21放置于模具30的每个凹槽31中，连接于金属板32上的导电连线26的外端通过超声热压焊与形成于半导体芯片21上表面上的芯片焊盘(未示出)连接。经过上述工艺，导电连线26的外端焊接到芯片焊盘上，以便通过热压焊形成不规则的椭圆形焊球25。
然后，用模制树脂23填充凹槽31，模制半导体芯片21，以预定的速度旋转模具30，使模制树脂23的上表面平面化，然后使之固化。
如图11B所示，使电极40与导电连线26的预定部分(大约在26长度的中部)接触，产生火花，这时电极40触及的导电连线26的部分断开，由于导电连线26的弹性，分离的部分垂直于芯片焊盘而立。
在上述工艺后，从模具30中分离出半导体芯片21，并最后制成根据本发明的片式半导体封装，如图11C所示。这里，图11C所示结构与图4和5所示封装相同。
作为参考，可以根据用途来形成不同的突出于模制树脂23之外的导电连线26的外端。即，突出于模制树脂23之外的导电连线26的那端可以成形为圆球。如图7所示，利用焊头29压导电连线26，可以形成“L”或“T”形导电连线。
如上所述，根据本发明的制造片式半导体封装的方法包括以下步骤：通过超声热压焊使形成于半导体芯片上的芯片焊盘与导电连线相连接；切掉部分导电连线，使之保留预定长度；用模制树脂密封除导电连线外端外的整个半导体芯片，以此保护半导体芯片和导电连线；及根据用途成形突出于模制树脂之外的导电连线的外端。
如上所述，在片式半导体封装及其制造方法中，导电连线的内端与形成于半导体芯片中的芯片焊盘连接，除导电连线外端之外，整个半导体芯片被模制，并根据用途成形该导电连线的突出端。因此，由于无需形成布线的分开工艺，所以可以制造小尺寸封装，由于传输电信号的外引线直接设置于芯片焊盘处，所以电通道缩短，因而可以改善电特性。另外，无论芯片焊盘形成的位置如何，都可以简化对半导体芯片的封装。
尽管为了说明的目的公开了本发明的优选实施例，但显然，在不脱离本发明附加权利要求限定的发明范围和精神实质的情况下，本领域的普通技术人员可以作出各种改型、附加和替换。

Claims (10)

1.一种片式半导体封装，包括：
具有在其上形成有多个芯片焊盘的半导体芯片；
导电连线，其内端与相应的一个半导体芯片的芯片焊盘垂直连接；以及
包围整个半导体芯片仅使导电连线的外端突出于外的模制树脂。
2.根据权利要求1的半导体封装，其特征在于，键合于芯片焊盘上的导电连线的所述内端成形为不规则的椭圆形焊球。
3.根据权利要求1的半导体封装，其特征在于，突出于模制树脂之外的导电连接线的所述外端弯曲，指向半导体芯片的中心部分，用作“L”形的外引线。
4.根据权利要求1的半导体封装，其特征在于，突出于模制树脂之外的导电连接线的所述外端成形为圆球。
5.一种制造片式半导体封装的方法，包括以下步骤：
使至少导电连线的内端与形成于半导体芯片上的芯片焊盘相连接；
切掉部分导电连线，使之有预定长度；
密封除导电连线外端外的整个半导体芯片；及
成形突出于模制树脂之外的导电连线外端。
6.根据权利要求5的方法，其特征在于，导电连线外端的成形是利用电弧放电进行的。
7.根据权利要求5的方法，其特征在于，导电连线外端的成形是通过压制导电连线的突出外端进行的。
8.根据权利要求7的方法，其特征在于，使用焊头来进行所述压制。
9.根据权利要求5的方法，其特征在于，导电连线外端的成形是利用超声热压焊进行的。
10.根据权利要求9的方法，其特征在于，超声热压焊工艺中使用焊头。
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DE19723203B4 (de) 2005-12-29
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