CN1168536A - 带有焊料层的半导体片 - Google Patents

带有焊料层的半导体片 Download PDF

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CN1168536A
CN1168536A CN97104969A CN97104969A CN1168536A CN 1168536 A CN1168536 A CN 1168536A CN 97104969 A CN97104969 A CN 97104969A CN 97104969 A CN97104969 A CN 97104969A CN 1168536 A CN1168536 A CN 1168536A
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layer
semiconductor chip
substrate
solder layer
diffusion barrier
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CN1126171C (zh
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M·施内冈斯
H·许布纳
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Infineon Technologies AG
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Siemens AG
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Abstract

一带有扩散势垒层(4)的硅半导体片(1)备有一焊料层，优选备有一锡层并且被放置在一金属基片(2)上并且通过加热到约250℃以上直接，即不需要其它的添加剂与基片焊接在一起。

Description

带有焊料层的半导体片
本发明涉及一种硅半导体片，该半导体片通过一组金属层与金属基片焊接在一起，该组金属层在焊接前从硅半导体片开始朝基片方向依次包括一铝层和一扩散层。
这种半导体片用在半导体器件中，尤其是安装在大批量投放市场的大功率半导体器件中。金属层组一般包含有铝层，该铝层附着在硅半导体片上。铝层和硅之间有良好的附着性，并尤其能与正向掺杂硅形成完美的欧姆触接。根据已有技术扩散势垒层接合在铝层上，该扩散势垒层大多由钛或铬构成并作为扩散势垒层上的镍层与铝层间的附着增强剂和背面势垒层。根据已有技术在镍层上直接地或在其用于提高附着特性的钛层上附着有一贵金属层，该层大多由银、金或钯构成并起着镍层防氧化保护层的作用。
在实际焊接时，在金属化的半导体片背面与金属基片间大多置入一焊片，该焊片大多由锡和焊剂构成。焊接时插在基片与半导体片银层间的焊料层熔化，其中银层被溶解并且下面的镍层也被焊料溶解，从而完成焊接。
但这种普通公知的焊接方法具有很大的缺点。一方面由于镍和硅半导体片的热膨胀系数不同会产生机械应力，尤其是半导体片很薄时(厚度≤250μm)会造成严重的晶片弯曲(弯曲度＞1000μm)。
因此会增大处理晶片的难度，增大组装一定位误差并增大了在处理晶片时碎裂的危险。
迄今一直试图通过在充分保留焊接附着强度的前提下减小镍层厚度来解决该问题。尽管减小镍层厚度(≈1μm)但在制做时还会出现700至2000μm的晶片弯曲度，该弯曲还会导致出现上述问题。
故本发明提出的任务在于，在硅半导体片的金属焊接过程中，大幅度减少片弯曲，而同时又不会损害附着基片材料的强度。
本任务的解决方案是，焊接层附着在所述硅半导体片的扩散势垒层上。
优选的焊料层是锡层，或铅层，或镓层。
这种半导体片的标准方法焊接在金属基片上，其中半导体片置放在基片上并加热到约250℃以上，直接地，即不需要添其它焊料和焊剂，焊接在基片上。
这样就产生几乎无应力的焊层，该焊层将导致小于300μm的衬底弯曲度。另外，焊接在基片上的半导体片的附着强度很高，即在大于30MPa范围内。另外，由于金属相压得很薄，因而不会由于温度—交变负荷而产生脆化现象。因此从整体上消除了晶片处理中的问题和碎裂的危险。
另外采用本发明金属化的半导体片和本发明的方法可以明显的降低成本，这是因为尤其省去了氧化保护层而降低了材料费并可提高产量。此外本发明的方法尤其有利于环境保护，这是因为不用焊剂而省去了采用含氟烃溶剂的清洗步骤。
在附图中示出焊接前金属层的布置顺序。依照本发明铝层3附着在半导体片1上，该层充分附着在硅上并与正向掺杂(P结)硅构成完美的欧姆触接。扩散势垒层4接合在铝层3上，扩散势垒层由铬或钛构成，其厚度约为50nm。该层可直接喷涂在铝层3或直接蒸发在其上。扩散层4上敷有一诸如铜等增附着层(图中未示出)或直接敷有焊料。焊料层由锡、镓或铅构成并且厚度为1000至3000nm，在采用锡时典型厚度为2700nm。采用此方法金属化的硅半导体片1然后被压在金属基片2上，该基片通常由铜构成，并且在大约300℃的温度下，硅半导体片在保护气体环境下或在真空条件下与该基片连接，产生扩散势垒层4、焊料层5和基片2之间的冶金焊接，该焊接直到约450℃都是稳定的。
采用本发明所述方法时可生产出高质量的产品，这是因为所述层组可实现良好的机械连接和稳定的电气接触。本方法与已有技术相比尤其是从技术、经济以及生态角度考虑都是有益的。
采用本发明的方法从技术上开创了进一步减小硅半导体衬底厚度的可能，这将导致对大功率半导体器件正向特性的改善。从经济上考虑，其优点在于，可降低材料成本并提高产量。最后本发明方法的生态优点在于，不用焊剂进行焊接，因而省去了用含有氟烃的溶剂进行清洗的步骤。

Claims (5)

1、由硅构成的半导体片(1)，该半导体片通过一组金属层与金属基片(2)焊接在一起，该金属层组焊接前从硅半导体片开始朝基片方向依次包括一铝层(3)和一扩散层(4)，其特征在于：在扩散势垒层上附着有一层焊料。
2、依照权利要求1所述的半导体片，其特征在于：焊料层(5)是一层锡、铅或镓。
3、依照权利要求1或2所述的半导体片，其特征在于：扩散势垒层(4)的厚度约为50nm。
4、依照权利要求1至3中的任一项所述的半导体片，其特征在于：焊料层的厚度小于3000nm。
5、用于将依照权利要求1至5中的任何一项所述的半导体片(1)焊接在一金属基片(2)的方法，其特征在于：将半导体片(1)放置在基片(2)上并通过加热到约250℃以上实现半导体片与基片(2)的直接焊接。
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