KR100454755B1 - 접착재료층을가진반도체몸체및이반도체몸체를접착하기위한방법 - Google Patents

접착재료층을가진반도체몸체및이반도체몸체를접착하기위한방법 Download PDF

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KR100454755B1
KR100454755B1 KR1019970004939A KR19970004939A KR100454755B1 KR 100454755 B1 KR100454755 B1 KR 100454755B1 KR 1019970004939 A KR1019970004939 A KR 1019970004939A KR 19970004939 A KR19970004939 A KR 19970004939A KR 100454755 B1 KR100454755 B1 KR 100454755B1
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semiconductor body
layer
mount
adhesive material
bonding
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KR1019970004939A
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KR970063589A (ko
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만프레트 슈네간스
홀거 휘프너
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지멘스 악티엔게젤샤프트
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  • Engineering & Computer Science (AREA)
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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Die Bonding (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

분산 장벽층(4)이 제공된 실리콘 반도체 몸체(1)는 접합 재료층(5), 바람직하게 얇은 주석층이 제공되고 그후 금속 마운트(2)에 제공되고 직접적으로, 즉 250℃ 이상의 온도로 가열함으로써 추가의 첨가물을 제공하지 않고 마운트에 접착된다.

Description

접착 재료층을 가진 반도체 몸체 및 이 반도체 몸체를 접착하기 위한 방법
본 발명은 실리콘으로 구성되고, 접착전에 실리콘으로부터 마운트 방향으로알루미늄 층 및 분산 장벽층을 포함하는 일련의 금속층을 통하여 금속 마운트에 접착될 수 있는 반도체 몸체에 관한 것이다.
상기 반도체 몸체는 반도체 구성요소, 특히 상업적으로 많이 이용할 수 있는 전력 반도체 구성요소에 설비된다. 일련의 금속층은 실리콘 반도체 몸체상에 배치된 알루미늄층을 일반적으로 포함한다. 알루미늄층은 실리콘에 잘 부착되고 특히 p 도핑 실리콘과 만족스러운 저항 접촉을 형성한다. 종래 기술에 따라, 알루미늄층은 확산 장벽층위에 배치되고, 상기 장벽층은 일반적으로 티타늄 또는 크롬으로 구성되고 분산 장벽층상에 배치된 니켈층과 알루미늄층 사이의 접착 조장자 및 후면측 장벽으로서 사용한다. 종래 기술에 따라, 귀금속 층은 부착을 개선하기 위하여 니켈층 또는 니켈층 다음에 오는 얇은 주석 티타늄층에 직접적으로 제공된다. 상기 귀금속층은 은, 금 또는 팔라듐으로 구성되고 니켈층에 대한 산화 보호부로서 사용한다.
실제 접착 동작에서, 주석 및 용매제로 구성된 접착층은 상기 방식으로 금속화된 반도체 몸체의 후면측 및 금속 마운트 사이에 일반적으로 배치된다. 접착 동작동안, 마운트 및 반도체 몸체의 은층 사이에 삽입된 접착층은 녹일 수 있는 은 층을 녹이고 그 다음 접착 재료에 의해 부분적으로 녹은 니켈층을 녹이고 접착 결합이 형성된다.
그러나, 일반적으로 공지된 접착 방법은 중요한 단점을 가진다. 즉, 니켈 및 실리콘 반도체 몸체의 다른 영팽창 계수가 특히 얇은 반도체 몸체(두께≤250㎛)의 경우 심한 웨이퍼 비틀림(비틀림>1000㎛)을 유도하는 기계적 스트레스를 유발하는 것이다.
이것은 웨이퍼 "처리"를 더욱 어렵게하고, 보다 많은 카세트 배치 에러가 발생하고 웨이퍼가 처리될 때 파손 위험성을 증가시킨다.
상기 문제점은 접착부가 충분한 부착 세기를 나타내도록 하는 크기로 니켈 층 두께를 최소화하는 시도에 의해 극복되도록 현재까지 노력되었다. 그러나, 감소된 니켈층 두께
Figure pat00001
에도 불구하고, 700 내지 2000㎛의 웨이퍼 비틀림이 제조중에 발생하였고, 환경에 대한 문제점을 유발하였다.
본 발명의 목적은 마운트 재료상의 부착 강도에 의해 처리시 발생되는 손상없이 웨이퍼 비틀림이 매우 감소되는 방식으로 실리콘 반도체 몸체를 금속화하는 것이다.
본 발명의 목적은 접착 재료층이 상기된 형태의 실리콘 반도체 몸체의 확산 장벽층에 인가되는 것에 의해 달성된다.
도 1은 금속 접착전의 층을 도시한 도.
*도면의 주요 부분에 대한 부호의 설명*
1 : 반도체 몸체 2 : 금속 마운트
3 : 알루미늄층 4 : 확산 장벽층
5 : 접착 재료층
주석 또는 납 또는 갈륨층은 바람직하게 접착 재료층으로서 제공된다.
반도체 몸체는 상기 반도체 몸체를 마운트에 제공하고 상기 몸체를 직접적으로, 즉 추가의 접착 매개물 및 용매제 없이, 대략 250℃ 이상의 온도로 가열하여 마운트에 접착함으로써 통상적으로 금속 마운트에 접착된다.
이것은 실질적으로 스트레스가 없는 접착 층을 형성하고, 300㎛ 이하의 기판 비틀림을 유발한다. 게다가, 마운트상에 접착된 반도체 몸체의 부착 강도는 즉 30 MPa보다 큰 영역에서 매우 높다. 게다가, 금속 면이 단지 주석으로만 이루어지기 때문에, 온도 변화 로딩으로 인한 부서짐이 발생하지 않는다. 전체적으로, 웨이퍼"처리" 및 부서질 위험성의 문제는 결과적으로 제거된다.
게다가, 산화 보호층의 생략으로 인해 재료 가격이 감소하기 때문에, 본 발명에 따른 금속화된 반도체 몸체 및 본 발명에 따른 방법으로 상당히 가격이 감소되고 작업 처리량이 증가될 수 있다. 게다가, 본 발명에 따른 방법은 CFC 용매를 사용하는 세척 단계가 용제 부족로 인해 불필요하기 때문에, 특히 환경적으로 바람직하다.
본 발명에 따라 알루미늄층은 반도체 몸체(1)에 제공되고, 상기 알루미늄 층은 실리콘에 잘 부착되고 특히 p 도핑 실리콘과 만족스러운 저항 접촉을 형성한다. 알루미늄층(3)은 확산 장벽층(4)상에 배치되고, 상기 장벽층은 대략 50 nm의 두께를 가지는 크롬 또는 티타늄으로 구성된다. 상기 장벽층은 직접적으로 알루미늄층에 스퍼터되거나 직접적으로 증기 증착된다. 확산 장벽층(4)에 부착 조장자층(예를들어 구리(도시되지 않음))이 제공되거나 접착 재료가 직접적으로 제공된다. 접착 층은 주석, 갈륨 또는 납으로 구성되고 1000 내지 3000 nm, 통상적으로 주석이 사용될 때 대략적으로 2700 nm의 두께를 가진다. 이런 방식으로 금속화된 실리콘 반도체 몸체(1)는 금속 마운트(2)에 가압되고, 상기 마운트는 일반적으로 구리로 구성되고 보호 가스 환경 또는 진공 조건하에서 대략적으로 300℃로 상기 몸체에 결합되고, 야금술 접속이 확산 장벽층(4), 접착 금속층(5) 및 마운트(2) 사이에 생성되고, 그것은 대략 450℃의 온도까지 안정하다.
본 발명에 따른 방법의 응용은 상기된 층의 시퀀스가 특히 기계적 및 전기적으로 안정한 접촉을 유발하기 때문에 양질의 생산품을 생산한다. 특히, 상기 방법은 종래 기술과 비교하여 기술적 및 경제적 및 생태학 관점에 대해 매우 바람직하다.
기술적 측면에서, 본 발명에 따른 방법은 실리콘 반도체 기판의 두께를 추가로 감소시키고, 그것은 전력 반도체 기판 소자의 전도 상태 특성을 개선시킨다. 경제적으로, 상기 장점은 재료 가격이 감소되고 제조 작업 처리량이 증가된다는 것이다. 마지막으로, 본 발명에 따른 방법의 생태학적 장점은 접착이 용매제없이 수행되고, 그 결과 CFC 함유 용제를 사용하는 세척 단계를 피할 수 있다는 것이다.
본 발명은 기술적 측면에서 실리콘 반도체 기판의 두께를 추가로 감소시키고, 그것은 전력 반도체 기판 소자의 전도 상태 특성을 개선시킨다. 경제적으로, 재료 가격이 감소되고 제조 작업 처리량이 증가된다는 것이다. 마지막으로, 본 발명에 따른 방법의 생태학적 장점은 접착이 용매제없이 수행되고, 그 결과 CFC 함유 용제를 사용하는 세척 단계를 피할 수 있다는 것이다.

Claims (5)

  1. 실리콘으로 구성되고, 접착 전에, 마운트 방향의 실리콘에서부터 알루미늄층(3) 및 확산 장벽층(4)을 포함하는 일련의 금속층을 통하여 금속 마운트(2)에 접착될 수 있는 반도체 몸체(1)로서,
    상기 확산 장벽층에 접착 재료층(5)이 제공되는 반도체 몸체.
  2. 제 1항에 있어서,
    상기 접착 재료층(5)으로서 주석, 납 또는 갈륨층이 제공되는 반도체 몸체.
  3. 제 1항 또는 제 2항에 있어서,
    상기 확산 장벽층(4)은 50nm 두께를 가지는 반도체 몸체.
  4. 제 1항 또는 제 2항에 있어서,
    상기 접착 재료층은 1000nm 내지 3000nm의 두께를 가지는 반도체 몸체.
  5. 제 1항 또는 제 2항에 따른 반도체 몸체(1)를 금속 마운트(2)에 접착시키는 방법으로서,
    상기 반도체 몸체(1)는 마운트(2)에 제공되고 250℃ 내지 450℃의 온도로 가열됨으로써 마운트(2)에 직접적으로 접착되는 반도체 몸체 접착 방법.
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EP0790647A2 (de) 1997-08-20
TW437028B (en) 2001-05-28
MY124335A (en) 2006-06-30
JP2983486B2 (ja) 1999-11-29
ATE265090T1 (de) 2004-05-15
DE19606101A1 (de) 1997-08-21
JPH1012507A (ja) 1998-01-16
SG69995A1 (en) 2000-01-25
KR970063589A (ko) 1997-09-12
EP0790647B1 (de) 2004-04-21
EP0790647A3 (de) 1999-06-02
CN1126171C (zh) 2003-10-29
US5901901A (en) 1999-05-11
DE59711523D1 (de) 2004-05-27
CN1168536A (zh) 1997-12-24

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