TW437028B - Semiconductor body which is composed of silicon and can be soldered to a metal mount as well as method for such soldering - Google Patents

Semiconductor body which is composed of silicon and can be soldered to a metal mount as well as method for such soldering Download PDF

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Publication number
TW437028B
TW437028B TW086101824A TW86101824A TW437028B TW 437028 B TW437028 B TW 437028B TW 086101824 A TW086101824 A TW 086101824A TW 86101824 A TW86101824 A TW 86101824A TW 437028 B TW437028 B TW 437028B
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TW
Taiwan
Prior art keywords
layer
patent application
welding
semiconductor
silicon
Prior art date
Application number
TW086101824A
Other languages
English (en)
Inventor
Holger Hubner
Manfred Schneegans
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Siemens Ag
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Application granted granted Critical
Publication of TW437028B publication Critical patent/TW437028B/zh

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    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Die Bonding (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)

Description

4370 2 8
t^tIJ明示 經濟部智慧財產局員工消費合作社印製 五、發明説明（） 發明說明 本發明傜關於由砂所組成之半導體本體，並可經由一 序列之金靥層予以焊接至一金屬固定件上，在焊接前， 它含有自固定件的方向之矽開始，一個鋁廇和一個擴散 障壁層。 將此等半導體本體配合至半導體組件中，特別配合至 功率半導體組件中，此等組件商業上可大量供應。通常 ，金鹛層的順序含有經安裝在矽半導體本體上之一個鋁 層。該鋁層充分黏附至矽上而形成一個令人湛意之電阻 性接觸點，特別具有p-摻雜之矽。根據先前技蕕，該鋁 層具有一個擴散障壁靥安裝在其上，此障壁層通常係由 鈦或鉻所組成並充作黏附促進劑以及在鎳層（其傜經安 裝在擴散障壁層上）與鋁層之間的背面障壁。根據先前 技蕕，將一個貴金屬層直接施加至鎳層上或跟隨它的薄 钛層上並具有改進黏附之功能，此貴金屬靥通常僳由銀 ，金或耙所組成而充作對於鎳層之氣化保護。
在實際焊接操作中，通常將焊接薄Μ (其通常你由錫 和一種焊劑所組成）放置在以此種方式所金屬化之半導 體本體的背面與金屬固定件之間。然後在焊接操作期間 ，將經嵌置在固定件與半導體本體之銀層間之焊料層熔 化，銀曆溶解而下面之鎳層經由焊接材料予以部份溶解 而産生所焊接之接頭Q 然而•此通常所熟知之焊接方法具有嚴重缺點。在一 方面，鎳和矽半導體本體的不同熱膨脹像數造成機械應 本紙張尺度適用中國國家標準（CNS ) A4規格（加乂297公嫠） T . X4IT. -41/ I--------«.-------1T------t.- (請先閱讀背面之注意事項再填寫本頁) _ A7 B7 437U 2 8 五、發明説明（） 力而導致駸重晶Η屈曲（屈曲> 1000 W m),持別是在薄 半導體本體（厚度忘250w m)的情況中。 (請先閲讀背面之注意事項再填寫本頁) 此現象使晶圓之”處理”更為困難，發生更多之卡式磁 帶匣定位錯誤且當處理晶圓時，有増加破裂之危險。 此問題目前之處理方式是經由試圖將鎳層厚度減至一 種最小之程度因此使焊接仍顯示充分之黏合強度。然而 ，儘管減少了鎳層厚度（〜1 wra)，仍然在製造過程中 繼續發生70 0至2000w η的晶團屈曲導致上述之問題。 因此，本發明的目的在以一種方式將矽半導體本體金 颶化以便將晶圓屈曲顯著減少而對於安裝材料之黏合強 度不會在製程中造成損失。 此目的像藉下述事實予以實現，即：將一個焊接材料 層施加至引言中所述及之該型矽半導體本體的擴散障壁 層上。 最好提供錫或鉛或鎵層作為該焊接材料層。 然後將此半導體本體經由加熱至高於大概258¾之溫 度而施加至固定件上並直接焊接至固定件上，典塱上偽 焊接至金靥固定件上，換言之，不須添加另外之焊接劑 和肋熔劑。 經濟部智慧財產局員工消費合作社印製 事實上，此方式産生無應力之焊接靥，它導致具有少 於300« m之基材屈曲。此外，固定件上之所焊接之半導 體本體的黏合強度極髙，換言之，在大於30PMa的區域中 。而且，由於溫度所改變之負載之脆變不會發生，因為金靥 相只會變薄，總之，因此消除了晶Η的”處理"及其破裂 本紙張尺度適用中國國家標準（CNS ) Α4規格（210Χ297公釐）
經濟部中央標準局負工消費合作社印I
4370 2 8 AV B7 五、發明説明（3 ) 的危險等等問題。 此外，使用根據本發明予以金靥化之半導體本體及使 用根據本發明之方法，可獲得顯著之成本降低，因為將 材料成本降低，尤其由於省略一個氧化保護層，可增加 生産率。而且，根據本發明之方法在環境上亦待別有助 益，因為清潔步驟未使用CFC焊劑，結果是不必使用助 熔劑。 本發明將參照附圖來作詳細說明。圖式簡單說明如下： 第i圖顯示在焊接前金屬的層順序6 根據本發明將一個鋁層3施加至半導體本體1上，此 鋁層充分黏附至砂上而形成一個令人滿意之電阻性接觸 點（特別具有P-摻雜之矽該鋁層3具有一個擴散障壁 層4安裝在其上，此障壁層係由具有厚度大概50η m之鉻 或鈦所組成。將此層直接噴濺至鋁層3上，或予以直接 蒸氣沈積。有一個黏附促進劑層，例如Cu(圖中未示）施 加至該擴散障壁層4上，或直接施加焊接材料。該焊料 層僳由錫、鎵或鋁所組成並具有1 0 Q 0至3 0 0 0 n m之厚度， 當使用錫時，典型厚度大概2700iinu然後將以此方式所 金屬化之砂半導體本體1壓在金靥固定件2上（通常， 它傜由銅所組成）t以及在大概300 °C時，在保護性氣體 大氣下，或在真空狀況下予以連接至其上，將一種治金 學上之連接産生在擴散障壁層4，焊接材料層5與該固定 件2之間，它在高逹大概450 °C之溫度下仍然是穩定的。 應用本發明之方法産生高品質的産品，因為所敘逑之 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） (請先閲讀背面之注意事項再填寫本頁)
A7 437u 2 8 五、發明說明（） _B7 層 順 序 導 致 特 別 良 好 之 機 械 和 電 穩 定 之 接 觸 點 〇 特 定 之 » 白 工 業 技 術 和 經 濟 上 及 生 態 學 上 等 兩 觀 點 而 t 與 先 Λ.Λ. 刖 技 藝 相 比 較 9 本 發 明 之 方 法 應 是 極 為 有 利 的 〇 在 工 業 技 術 術 語 方 面 t 根 據 本 發 明 之 方 法 掲 示 更 進 一 步 減 少 矽 半 導 體 基 材 的 厚 度 之 可 能 性 此 導 致 功 率 半 導 體 組 件 導 電 狀 態 性 質 之 改 良 » 在 經 濟 上 優 點 係 : 可 降 低 材 料 成 本 及 可 增 加 製 造 之 生 産 量 〇 最 後 t 根 據 本 發 明 之 方 法 的 生 態 學 上 之 優 點 在 於 下 述 事 實 不 須 助 熔 劑 即 可 進 行 焊 接 ， 而 其 結 果 是 • 藉 此 可 避 免 使 用 含 有 CFC溶劑 來 進 行 淸 潔 之 步 想 〇 符 號 對 照 表 1 半 導 體 本 81 2 金 屬 固 定 件 3 鋁 層 4 擴 散 陣 壁 層 5 焊 接 材 料 層 (請先閱讀背面之注意事項再填寫本頁) -6 -本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）

Claims (1)

  1. ' 437U 2 B A8 BS C8 D8 <^4 / 〇 ( -丨Γ、 六、申請專利範圍 1. —種由矽所组成之半導饉本體（ι>·其可經由一序列 的金屬層而焊接至金屬固定件（2>上，在焊接前，此 金JB層含有，自固定件方向中之矽厢始·—值鋁庖（3) 和一傾擴散障壁層44)·其待欲為：焊接材料層（5)僳 施加至擴散障壁層上》 2. 如申請專利範圍第1項之半導S本醱·其中設有一傾 錫或鉛或鎵層以作為焊接材料層（5 3. 如申請專利範圔笫1或第2項之半導醱本體·其中擴 敗障壁雇之厚度大約是50niu .4,如申請專利範困第1或第2項之半導Η本體，其中該 焊接材料S的厚度小於3000 n a。 5. 如申請專利範圍第3項之半導《本睦，其中该焊接 . 材料層的厚度小於3000ηΒβ 、乂 6. —種焊接半導體本醴（1)至金靥固定件（2)之方法，其 僳用於申請專利範園第1至4項之半導體本膣，其特 撖為：該半導體本睡（1)係施加至固定件（2)占，以及. 葙由加热至高於大約250Χ：之溫度直接焊接至固定件f (2) _h 〇 本纸張/〇*_適用中國國家標串（<：呢>入4说格<2丨0父297公釐） let— Ti^— 1^1 1^1 nn I -I (請先閣讀背面之注意事項再填.f々頁) 訂
TW086101824A 1996-02-19 1997-02-17 Semiconductor body which is composed of silicon and can be soldered to a metal mount as well as method for such soldering TW437028B (en)

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