KR970063589A - 접착 재료층을 가진 반도체 몸체 및 이 반도체 몸체를 접착하기 위한 방법 - Google Patents
접착 재료층을 가진 반도체 몸체 및 이 반도체 몸체를 접착하기 위한 방법 Download PDFInfo
- Publication number
- KR970063589A KR970063589A KR1019970004939A KR19970004939A KR970063589A KR 970063589 A KR970063589 A KR 970063589A KR 1019970004939 A KR1019970004939 A KR 1019970004939A KR 19970004939 A KR19970004939 A KR 19970004939A KR 970063589 A KR970063589 A KR 970063589A
- Authority
- KR
- South Korea
- Prior art keywords
- semiconductor body
- layer
- adhesive material
- mount
- material layer
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract 13
- 238000000034 method Methods 0.000 title claims abstract 3
- 239000000853 adhesive Substances 0.000 title claims 3
- 230000001070 adhesive effect Effects 0.000 title claims 3
- 239000000463 material Substances 0.000 title claims 3
- 230000004888 barrier function Effects 0.000 claims abstract 5
- 229910052710 silicon Inorganic materials 0.000 claims abstract 4
- 239000010703 silicon Substances 0.000 claims abstract 4
- 229910052782 aluminium Inorganic materials 0.000 claims abstract 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract 2
- 238000010438 heat treatment Methods 0.000 claims abstract 2
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 239000010410 layer Substances 0.000 claims 8
- 239000006185 dispersion Substances 0.000 claims 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 1
- 239000012790 adhesive layer Substances 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 2
- 239000004411 aluminium Substances 0.000 abstract 1
- 229910000679 solder Inorganic materials 0.000 abstract 1
- 238000005476 soldering Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/492—Bases or plates or solder therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/03—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/111—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors
- H01L31/1113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors the device being a photothyristor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04026—Bonding areas specifically adapted for layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/05075—Plural internal layers
- H01L2224/0508—Plural internal layers being stacked
- H01L2224/05083—Three-layer arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/05624—Aluminium [Al] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/83801—Soldering or alloying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01014—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01015—Phosphorus [P]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0102—Calcium [Ca]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01022—Titanium [Ti]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01024—Chromium [Cr]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01028—Nickel [Ni]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0103—Zinc [Zn]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01046—Palladium [Pd]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0105—Tin [Sn]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12681—Ga-, In-, Tl- or Group VA metal-base component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12687—Pb- and Sn-base components: alternative to or next to each other
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12771—Transition metal-base component
- Y10T428/12778—Alternative base metals from diverse categories
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12771—Transition metal-base component
- Y10T428/12806—Refractory [Group IVB, VB, or VIB] metal-base component
- Y10T428/12812—Diverse refractory group metal-base components: alternative to or next to each other
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Die Bonding (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
분산 장벽층(4)이 제공된 실리콘 반도체 몸체(1)는 접합 재료층(5), 바람직하게 얇은 주석층이 제공되고 그 후 금속 마운트(2)에 제공되고 집적적으로, 즉 250℃ 이상의 온도로 가열함으로써 추가의 첨가물을 제공하지 않고 마운트에 접착된다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 금속 접착전의 층을 도시한 도.
Claims (5)
- 실리콘으로 구성되고 접착전에, 실리콘에서부터 마운트 방향으로 알루미늄층(3) 및 분산 장벽층(4)을 포함하는 금속층의 시퀀스를 통하여 금속 마운트(2)에 접착될 수 있는 반도체 몸체(1)에 있어서, 접착 재료층(5)은 분산 장벽층에 제공되는 것을 특징으로 하는 반도체 몸체.
- 제1항에 있어서, 주석 또는 납 또는 갈륨층이 접착 재료층(5)으로서 제공되는 것을 특징으로 하는 반도체 몸체.
- 제1항 또는 제2항에 있어서, 상기 반도체 몸체는 약 50nm두께의 분산 장벽층(4)을 포함한 것을 특징으로 하는 반도체 몸체.
- 제1항 내지 제3항 중 어느 한 항에 있어서, 상기 반도체 몸체는 3000nm 이하의 접착재층 두께를 가지는 것을 특징으로 하는 반도체 몸체.
- 제1항 내지 제4항 중 어느 한 항에 따른 반도체 몸체(1)를 금속 마운트(2)에 접착하기 위한 방법에 있어서, 반도체 몸체(1)는 마운트(2)에 제공되고 대략 250℃ 이상의 온도로 가열함으로써 마운트(2)에 직접적으로 접착한 것을 특징으로 하는 방법.※참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19606101A DE19606101A1 (de) | 1996-02-19 | 1996-02-19 | Halbleiterkörper mit Lotmaterialschicht |
DE19606101.6 | 1996-02-19 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR970063589A true KR970063589A (ko) | 1997-09-12 |
KR100454755B1 KR100454755B1 (ko) | 2005-01-13 |
Family
ID=7785797
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019970004939A KR100454755B1 (ko) | 1996-02-19 | 1997-02-19 | 접착재료층을가진반도체몸체및이반도체몸체를접착하기위한방법 |
Country Status (10)
Country | Link |
---|---|
US (1) | US5901901A (ko) |
EP (1) | EP0790647B1 (ko) |
JP (1) | JP2983486B2 (ko) |
KR (1) | KR100454755B1 (ko) |
CN (1) | CN1126171C (ko) |
AT (1) | ATE265090T1 (ko) |
DE (2) | DE19606101A1 (ko) |
MY (1) | MY124335A (ko) |
SG (1) | SG69995A1 (ko) |
TW (1) | TW437028B (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100594565B1 (ko) * | 1999-08-04 | 2006-06-28 | 삼성전자주식회사 | 액정표시장치 |
Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19639438A1 (de) * | 1996-09-25 | 1998-04-02 | Siemens Ag | Halbleiterkörper mit Lotmaterialschicht |
US6440750B1 (en) | 1997-06-10 | 2002-08-27 | Agere Systems Guardian Corporation | Method of making integrated circuit having a micromagnetic device |
US6118351A (en) * | 1997-06-10 | 2000-09-12 | Lucent Technologies Inc. | Micromagnetic device for power processing applications and method of manufacture therefor |
DE19735760A1 (de) * | 1997-08-18 | 1999-02-25 | Zeiss Carl Fa | Lötverfahren für optische Materialien an Metallfassungen und gefaßte Baugruppen |
DE19740904B4 (de) | 1997-09-17 | 2004-10-28 | Infineon Technologies Ag | Verfahren zum Beseitigen von Sauerstoff-Restverunreinigungen aus tiegelgezogenen Siliziumwafern |
US6255714B1 (en) | 1999-06-22 | 2001-07-03 | Agere Systems Guardian Corporation | Integrated circuit having a micromagnetic device including a ferromagnetic core and method of manufacture therefor |
DE19951945A1 (de) * | 1999-10-28 | 2001-05-03 | Daimler Chrysler Ag | Halbleiterbauelement mit Seitenwandmetallisierung |
JP4544675B2 (ja) * | 1999-12-21 | 2010-09-15 | ローム株式会社 | 半導体装置の製造方法 |
DE10124141B4 (de) * | 2000-09-29 | 2009-11-26 | Infineon Technologies Ag | Verbindungseinrichtung für eine elektronische Schaltungsanordnung und Schaltungsanordnung |
EP1320889A1 (de) * | 2000-09-29 | 2003-06-25 | Infineon Technologies AG | Verbindungseinrichtung |
DE10103294C1 (de) * | 2001-01-25 | 2002-10-31 | Siemens Ag | Träger mit einer Metallfläche und mindestens ein darauf angeordneter Chip, insbesondere Leistungshalbleiter |
DE102004001956B4 (de) | 2004-01-13 | 2007-02-01 | Infineon Technologies Ag | Umverdrahtungssubstratstreifen mit mehreren Halbleiterbauteilpositionen |
US7347354B2 (en) * | 2004-03-23 | 2008-03-25 | Intel Corporation | Metallic solder thermal interface material layer and application of the same |
US7868472B2 (en) * | 2004-04-08 | 2011-01-11 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Thermal dissipation in integrated circuit systems |
JP4882229B2 (ja) * | 2004-09-08 | 2012-02-22 | 株式会社デンソー | 半導体装置およびその製造方法 |
DE102005031836B4 (de) | 2005-07-06 | 2007-11-22 | Infineon Technologies Ag | Halbleiterleistungsmodul mit SiC-Leistungsdioden und Verfahren zur Herstellung desselben |
EP1748480B1 (en) | 2005-07-28 | 2009-06-24 | Infineon Technologies AG | Connection structure for attaching a semiconductor chip to a metal substrate, semiconductor chip and electronic component including the connection structure and methods for producing the connection structure |
DE102005052563B4 (de) | 2005-11-02 | 2016-01-14 | Infineon Technologies Ag | Halbleiterchip, Halbleiterbauteil und Verfahren zu deren Herstellung |
US7508012B2 (en) | 2006-01-18 | 2009-03-24 | Infineon Technologies Ag | Electronic component and method for its assembly |
US8951478B2 (en) * | 2006-03-30 | 2015-02-10 | Applied Materials, Inc. | Ampoule with a thermally conductive coating |
DE102006031405B4 (de) * | 2006-07-05 | 2019-10-17 | Infineon Technologies Ag | Halbleitermodul mit Schaltfunktionen und Verfahren zur Herstellung desselben |
DE102006048448A1 (de) * | 2006-10-11 | 2008-04-17 | Endress + Hauser Wetzer Gmbh + Co. Kg | Erzeugen einer Lotverbindung |
US9214442B2 (en) | 2007-03-19 | 2015-12-15 | Infineon Technologies Ag | Power semiconductor module, method for producing a power semiconductor module, and semiconductor chip |
CN101950737A (zh) * | 2009-11-23 | 2011-01-19 | 杭州士兰集成电路有限公司 | P型硅衬底背面金属化的制作方法 |
US8513798B2 (en) | 2010-09-09 | 2013-08-20 | Infineon Technologies Ag | Power semiconductor chip package |
US8587116B2 (en) | 2010-09-30 | 2013-11-19 | Infineon Technologies Ag | Semiconductor module comprising an insert |
US8461645B2 (en) | 2011-03-16 | 2013-06-11 | Infineon Technologies Austria Ag | Power semiconductor device |
DE102016226103B3 (de) | 2016-12-22 | 2018-05-09 | Conti Temic Microelectronic Gmbh | Verfahren zur Herstellung einer elektrischen Verbindung und elektrische Verbindung zwischen zwei Komponenten |
US10910508B1 (en) * | 2018-05-04 | 2021-02-02 | National Technology & Engineering Solutions Of Sandia, Llc | Method of fabricating photosensitive devices with reduced process-temperature budget |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2474039A (en) * | 1945-03-03 | 1949-06-21 | Metals & Controls Corp | Method of forming composite metal having a nickel-plated beryllium-copper base and gold or silver bonded thereto by a copper-plated iron sheet |
GB1149606A (en) * | 1967-02-27 | 1969-04-23 | Motorola Inc | Mounting for a semiconductor wafer which is resistant to fatigue caused by thermal stresses |
DE2522773A1 (de) * | 1973-08-09 | 1976-12-02 | Siemens Ag | Weichgeloetete kontaktanordnung |
US4451972A (en) * | 1980-01-21 | 1984-06-05 | National Semiconductor Corporation | Method of making electronic chip with metalized back including a surface stratum of solder |
DE3406542A1 (de) * | 1984-02-23 | 1985-08-29 | Telefunken electronic GmbH, 7100 Heilbronn | Verfahren zum herstellen eines halbleiterbauelementes |
JPS63238994A (ja) * | 1987-03-25 | 1988-10-05 | Tdk Corp | 半田組成物 |
DE3740773A1 (de) * | 1987-12-02 | 1989-06-15 | Philips Patentverwaltung | Verfahren zum herstellen elektrisch leitender verbindungen |
DE3823347A1 (de) * | 1988-07-09 | 1990-01-11 | Semikron Elektronik Gmbh | Leistungs-halbleiterelement |
EP0398485B1 (en) * | 1989-05-16 | 1995-08-09 | Gec-Marconi Limited | A method of making a Flip Chip Solder bond structure for devices with gold based metallisation |
US5027189A (en) * | 1990-01-10 | 1991-06-25 | Hughes Aircraft Company | Integrated circuit solder die-attach design and method |
DE9212486U1 (ko) * | 1992-09-16 | 1993-03-04 | Siemens Ag, 8000 Muenchen, De | |
EP0591862B1 (en) * | 1992-10-02 | 1999-05-26 | Matsushita Electric Industrial Co., Ltd. | A semiconductor device, an image sensor device, and methods for producing the same |
DE4241439A1 (de) * | 1992-12-10 | 1994-06-16 | Daimler Benz Ag | Verfahren zur Erzeugung einer formschlüssigen Verbindung zwischen metallischen Verbindern und metallischen Kontakten von Halbleiteroberflächen |
US5816478A (en) * | 1995-06-05 | 1998-10-06 | Motorola, Inc. | Fluxless flip-chip bond and a method for making |
US5803343A (en) * | 1995-10-30 | 1998-09-08 | Delco Electronics Corp. | Solder process for enhancing reliability of multilayer hybrid circuits |
-
1996
- 1996-02-19 DE DE19606101A patent/DE19606101A1/de not_active Withdrawn
-
1997
- 1997-02-14 SG SG1997000324A patent/SG69995A1/en unknown
- 1997-02-14 JP JP9047059A patent/JP2983486B2/ja not_active Expired - Fee Related
- 1997-02-17 TW TW086101824A patent/TW437028B/zh not_active IP Right Cessation
- 1997-02-18 MY MYPI97000591A patent/MY124335A/en unknown
- 1997-02-19 CN CN97104969A patent/CN1126171C/zh not_active Expired - Lifetime
- 1997-02-19 DE DE59711523T patent/DE59711523D1/de not_active Expired - Lifetime
- 1997-02-19 AT AT97102700T patent/ATE265090T1/de not_active IP Right Cessation
- 1997-02-19 US US08/802,134 patent/US5901901A/en not_active Expired - Lifetime
- 1997-02-19 KR KR1019970004939A patent/KR100454755B1/ko not_active IP Right Cessation
- 1997-02-19 EP EP97102700A patent/EP0790647B1/de not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100594565B1 (ko) * | 1999-08-04 | 2006-06-28 | 삼성전자주식회사 | 액정표시장치 |
Also Published As
Publication number | Publication date |
---|---|
SG69995A1 (en) | 2000-01-25 |
DE59711523D1 (de) | 2004-05-27 |
TW437028B (en) | 2001-05-28 |
US5901901A (en) | 1999-05-11 |
ATE265090T1 (de) | 2004-05-15 |
EP0790647A3 (de) | 1999-06-02 |
EP0790647A2 (de) | 1997-08-20 |
JP2983486B2 (ja) | 1999-11-29 |
CN1168536A (zh) | 1997-12-24 |
KR100454755B1 (ko) | 2005-01-13 |
JPH1012507A (ja) | 1998-01-16 |
EP0790647B1 (de) | 2004-04-21 |
DE19606101A1 (de) | 1997-08-21 |
CN1126171C (zh) | 2003-10-29 |
MY124335A (en) | 2006-06-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR970063589A (ko) | 접착 재료층을 가진 반도체 몸체 및 이 반도체 몸체를 접착하기 위한 방법 | |
MX163727B (es) | Empaque para semiconductor y procedimiento para fabricarlo | |
GB1426873A (en) | Methods of pressure bonding a ceramic member to another member | |
MX164788B (es) | Sistema de fijacion de matriz de semiconductores | |
GB2084399B (en) | Mounting a semiconductor device | |
GB1389542A (en) | Methods of securing a semiconductor body to a support | |
CN1061784C (zh) | 树脂密封型半导体器件 | |
KR960039235A (ko) | 열방열 핀을 구비한 내부 리드 본딩 장치 및 이를 이용한 내부 리드 본딩 방법 | |
CA2000838A1 (en) | Method of soldering semiconductor substrate on supporting plate | |
US3248615A (en) | Semiconductor device with liquidized solder layer for compensation of expansion stresses | |
KR910013498A (ko) | 반도체장치 및 그 제조방법 | |
JP2590521B2 (ja) | チップキャリア | |
JPS6439035A (en) | Semiconductor device | |
GB2080028B (en) | Adhesive layers for bonding metal layers to semiconductor | |
JP2000196101A5 (ja) | 半導体装置 | |
KR880005680A (ko) | 반도체 장치용 점퍼칩 | |
US5706577A (en) | No fixture method to cure die attach for bonding IC dies to substrates | |
KR970030543A (ko) | 기판상의 부품접합 방법 및 장치와 리드 프레임상의 반도체칩 접합방법 및 장치 | |
JPS6056297B2 (ja) | 集積回路素子の気密実装構造 | |
JPS62115796A (ja) | 光半導体用ヒ−トシンクの電極構造 | |
KR970054984A (ko) | 레이저 다이오드의 접합구조 및 접합방법 | |
KR100200364B1 (ko) | 반도체 장치 | |
JPH06226485A (ja) | コーティングはんだおよびコーティングはんだを貼付けた半導体パッケージ封止用リッド | |
JPH0424952A (ja) | ハイブリッド型半導体装置 | |
KR920007152A (ko) | 반도체 장치의 수지밀봉방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20121012 Year of fee payment: 9 |
|
FPAY | Annual fee payment |
Payment date: 20131011 Year of fee payment: 10 |
|
FPAY | Annual fee payment |
Payment date: 20141010 Year of fee payment: 11 |
|
FPAY | Annual fee payment |
Payment date: 20151012 Year of fee payment: 12 |
|
LAPS | Lapse due to unpaid annual fee |