KR970063589A - 접착 재료층을 가진 반도체 몸체 및 이 반도체 몸체를 접착하기 위한 방법 - Google Patents

접착 재료층을 가진 반도체 몸체 및 이 반도체 몸체를 접착하기 위한 방법 Download PDF

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KR970063589A
KR970063589A KR1019970004939A KR19970004939A KR970063589A KR 970063589 A KR970063589 A KR 970063589A KR 1019970004939 A KR1019970004939 A KR 1019970004939A KR 19970004939 A KR19970004939 A KR 19970004939A KR 970063589 A KR970063589 A KR 970063589A
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semiconductor body
layer
adhesive material
mount
material layer
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KR1019970004939A
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KR100454755B1 (ko
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만프레트 슈네간스
홀거 휘프너
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로더리히 네테부쉬; 롤프 옴케
지멘스 악티엔게젤샤프트
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Abstract

분산 장벽층(4)이 제공된 실리콘 반도체 몸체(1)는 접합 재료층(5), 바람직하게 얇은 주석층이 제공되고 그 후 금속 마운트(2)에 제공되고 집적적으로, 즉 250℃ 이상의 온도로 가열함으로써 추가의 첨가물을 제공하지 않고 마운트에 접착된다.

Description

접착 재료층을 가진 반도체 몸체 및 이 반도체 몸체를 접착하기 위한 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 금속 접착전의 층을 도시한 도.

Claims (5)

  1. 실리콘으로 구성되고 접착전에, 실리콘에서부터 마운트 방향으로 알루미늄층(3) 및 분산 장벽층(4)을 포함하는 금속층의 시퀀스를 통하여 금속 마운트(2)에 접착될 수 있는 반도체 몸체(1)에 있어서, 접착 재료층(5)은 분산 장벽층에 제공되는 것을 특징으로 하는 반도체 몸체.
  2. 제1항에 있어서, 주석 또는 납 또는 갈륨층이 접착 재료층(5)으로서 제공되는 것을 특징으로 하는 반도체 몸체.
  3. 제1항 또는 제2항에 있어서, 상기 반도체 몸체는 약 50nm두께의 분산 장벽층(4)을 포함한 것을 특징으로 하는 반도체 몸체.
  4. 제1항 내지 제3항 중 어느 한 항에 있어서, 상기 반도체 몸체는 3000nm 이하의 접착재층 두께를 가지는 것을 특징으로 하는 반도체 몸체.
  5. 제1항 내지 제4항 중 어느 한 항에 따른 반도체 몸체(1)를 금속 마운트(2)에 접착하기 위한 방법에 있어서, 반도체 몸체(1)는 마운트(2)에 제공되고 대략 250℃ 이상의 온도로 가열함으로써 마운트(2)에 직접적으로 접착한 것을 특징으로 하는 방법.
    ※참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019970004939A 1996-02-19 1997-02-19 접착재료층을가진반도체몸체및이반도체몸체를접착하기위한방법 KR100454755B1 (ko)

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