DE9212486U1 - Halbleiterkörper mit verlöteter Trägerplatte - Google Patents

Halbleiterkörper mit verlöteter Trägerplatte

Info

Publication number
DE9212486U1
DE9212486U1 DE9212486U DE9212486U DE9212486U1 DE 9212486 U1 DE9212486 U1 DE 9212486U1 DE 9212486 U DE9212486 U DE 9212486U DE 9212486 U DE9212486 U DE 9212486U DE 9212486 U1 DE9212486 U1 DE 9212486U1
Authority
DE
Germany
Prior art keywords
layer
semiconductor body
nickel
carrier plate
silver
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE9212486U
Other languages
German (de)
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Priority to DE9212486U priority Critical patent/DE9212486U1/de
Publication of DE9212486U1 publication Critical patent/DE9212486U1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/492—Bases or plates or solder therefor
    • H01L23/4924—Bases or plates or solder therefor characterised by the materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04026—Bonding areas specifically adapted for layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/831—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
    • H01L2224/83101—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/83801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01022—Titanium [Ti]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01028—Nickel [Ni]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0105—Tin [Sn]

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Die Bonding (AREA)
DE9212486U 1992-09-16 1992-09-16 Halbleiterkörper mit verlöteter Trägerplatte Expired - Lifetime DE9212486U1 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE9212486U DE9212486U1 (de) 1992-09-16 1992-09-16 Halbleiterkörper mit verlöteter Trägerplatte

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE9212486U DE9212486U1 (de) 1992-09-16 1992-09-16 Halbleiterkörper mit verlöteter Trägerplatte

Publications (1)

Publication Number Publication Date
DE9212486U1 true DE9212486U1 (de) 1993-03-04

Family

ID=6883825

Family Applications (1)

Application Number Title Priority Date Filing Date
DE9212486U Expired - Lifetime DE9212486U1 (de) 1992-09-16 1992-09-16 Halbleiterkörper mit verlöteter Trägerplatte

Country Status (1)

Country Link
DE (1) DE9212486U1 (ko)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0756325A2 (de) * 1995-07-27 1997-01-29 Philips Patentverwaltung GmbH Halbleitervorrichtung mit einem Träger
EP0788150A2 (de) * 1996-02-01 1997-08-06 Siemens Aktiengesellschaft Verfahren zum Löten eines Halbleiterkörpers auf eine metallene Trägerplatte
EP0790647A2 (de) * 1996-02-19 1997-08-20 Siemens Aktiengesellschaft Halbleiterkörper mit Lotmaterialschicht und Verfahren zum Auflöten des Halbleiterkörpers auf eine metallene Trägerplatte
WO1999008322A1 (de) * 1997-08-08 1999-02-18 Siemens Aktiengesellschaft Halbleiterkörper mit rückseitenmetallisierung
DE102005042780B4 (de) * 2004-09-08 2017-02-02 Denso Corporation Halbleiteranordnung mit einer Lotschicht auf Zinnbasis und Verfahren zum Herstellen derselben

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0756325A2 (de) * 1995-07-27 1997-01-29 Philips Patentverwaltung GmbH Halbleitervorrichtung mit einem Träger
EP0756325A3 (de) * 1995-07-27 1998-12-30 Philips Patentverwaltung GmbH Halbleitervorrichtung mit einem Träger
EP0788150A2 (de) * 1996-02-01 1997-08-06 Siemens Aktiengesellschaft Verfahren zum Löten eines Halbleiterkörpers auf eine metallene Trägerplatte
EP0788150A3 (de) * 1996-02-01 1998-09-23 Siemens Aktiengesellschaft Verfahren zum Löten eines Halbleiterkörpers auf eine metallene Trägerplatte
EP0790647A2 (de) * 1996-02-19 1997-08-20 Siemens Aktiengesellschaft Halbleiterkörper mit Lotmaterialschicht und Verfahren zum Auflöten des Halbleiterkörpers auf eine metallene Trägerplatte
EP0790647A3 (de) * 1996-02-19 1999-06-02 Siemens Aktiengesellschaft Halbleiterkörper mit Lotmaterialschicht und Verfahren zum Auflöten des Halbleiterkörpers auf eine metallene Trägerplatte
WO1999008322A1 (de) * 1997-08-08 1999-02-18 Siemens Aktiengesellschaft Halbleiterkörper mit rückseitenmetallisierung
US6147403A (en) * 1997-08-08 2000-11-14 Infineon Technologies Ag Semiconductor body with metallizing on the back side
US6309965B1 (en) 1997-08-08 2001-10-30 Siemens Aktiengesellschaft Method of producing a semiconductor body with metallization on the back side that includes a titanium nitride layer to reduce warping
DE102005042780B4 (de) * 2004-09-08 2017-02-02 Denso Corporation Halbleiteranordnung mit einer Lotschicht auf Zinnbasis und Verfahren zum Herstellen derselben

Similar Documents

Publication Publication Date Title
DE3787709T2 (de) Halbleiteranordnung mit einem Elektrodenfleck.
DE102005042780B4 (de) Halbleiteranordnung mit einer Lotschicht auf Zinnbasis und Verfahren zum Herstellen derselben
DE69217617T2 (de) Verbindungsverfahren unter Verwendung eines aus mehrfach abwechselnden Gold- und Zinnschichten bestehenden Lotes
DE4414729C2 (de) Werkstoff für die Herstellung eines Leiterrahmens und Leierrahmen für Halbleiterbauelemente
DE2032872A1 (de) Verfahren zum Herstellen weichlötfähiger Kontakte zum Einbau von Halbleiterbauelementen in Gehäuse
DE4313980B4 (de) Integrierte Hybridschaltung und Verfahren zu deren Herstellung
DE4424962A1 (de) Verfahren zur Herstellung eines Chip-Anschlusses
DE2930779A1 (de) Halbleitervorrichtung
EP0790647A2 (de) Halbleiterkörper mit Lotmaterialschicht und Verfahren zum Auflöten des Halbleiterkörpers auf eine metallene Trägerplatte
DE2314731B2 (de) Halbleiteranordnung mit höckerartigen Vorsprüngen auf Kontaktflecken und Verfahren zur Herstellung einer solchen Halbleiteranordnung
DE4311872A1 (de) Leiterrahmen für integrierte Schaltungen
DE2509912B2 (de) Elektronische Dünnfilmschaltung
DE1627762A1 (de) Verfahren zum Herstellen von Halbleiterbauelementen
DE3823347A1 (de) Leistungs-halbleiterelement
DE9212486U1 (de) Halbleiterkörper mit verlöteter Trägerplatte
DE3787772T2 (de) Halbleiterchip mit einer Höckerstruktur für automatische Bandmontage.
DE19603654C1 (de) Verfahren zum Löten eines Halbleiterkörpers auf eine Trägerplatte und Halbleiterkörper zur Durchführung des Verfahrens
DE1789062A1 (de) Verfahren zum Herstellen von Metallkontakten fuer den Einbau von Halbleiterbauelementen in Gehaeuse
DE3830131C2 (ko)
DE3740773A1 (de) Verfahren zum herstellen elektrisch leitender verbindungen
DE1113519B (de) Siliziumgleichrichter fuer hohe Stromstaerken
DE19639438A1 (de) Halbleiterkörper mit Lotmaterialschicht
DE19942885A1 (de) Halbleiter-Bauelement
DE4425943B4 (de) Verfahren zur Herstellung eines mehrschichtigen Leiter- bzw. Anschlusselements und Leiter- bzw. Anschlusselement
EP0193128A2 (de) Filmmontierter Schaltkreis und Verfahren zu seiner Herstellung