CN1061784C - 树脂密封型半导体器件 - Google Patents

树脂密封型半导体器件 Download PDF

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CN1061784C
CN1061784C CN96108109A CN96108109A CN1061784C CN 1061784 C CN1061784 C CN 1061784C CN 96108109 A CN96108109 A CN 96108109A CN 96108109 A CN96108109 A CN 96108109A CN 1061784 C CN1061784 C CN 1061784C
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semiconductor element
island body
film material
resin
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CN1149766A (zh
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森隆一郎
阿部俊一
秋山龙彦
木村通孝
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Mitsubishi Electric Corp
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Abstract

提供一种几乎不产生封装破裂且制造成本低廉的树脂密封型半导体器件。在引线框架的岛状体载置半导体元件的部分上形成多个通孔，用树脂制的薄膜材料把上述半导体元件粘接在上述岛状体上。另外，使上述薄膜材料各边尺寸至少比上述半导体元件各边尺寸短0.5mm以上。还有，形成上述多个通孔使之相互靠近，其相互间隔至少小于1.0mm。进而，在本发明中，上述薄膜材料的弹性率在200℃的温度下小于10MPa。

Description

树脂密封型半导体器件
本发明涉及把半导体元件载置于引线框架的岛状固定部位上并用树脂把它们密封而形成的一种树脂密封型半导体器件。
在以往的树脂密封型半导体器件中，起因于金属制的岛状体和密封树脂之间的剥离而产生的封装破裂是一个严重的问题。为此，以往为防止这种封装破裂而实施了种种方案。图4示出其中一例，在图4中，1是引线框架的岛状体。2是半导体元件，3是用于把半导体元件2焊接到岛状体1上的焊锡，4是形成在岛状体1的背面的多个凹窝。在图4所示的例中，由于用多个凹窝4产生对于密封树脂(未图示)的固定效果，因而很难发生岛状体1和密封树脂间的剥离，并能在某种程度上防止封装破裂。但是，在该半导体器件中，由于只能用刻蚀方法形成凹窝4，故存在含有岛状体1的引线框架的制造成本升高的问题。
于是，在以往技术中还提出了如图5那样通过在岛状体1上形成多个通孔5从而在岛状体1和密封树脂(未图示)之间产生固定效果而构成的半导体器件(例如，特开昭56-104459号公报、特开昭63-249341号公报、特开平2-246359号公报等)。在该岛状体1上形成了多个通孔5的半导体器件中，因为能够用冲孔法形成这些通孔5，因而能够以低成本制造引线框架。
然而，在这种以往的半导体器件中，若使用糊状材料6或焊锡作为把半导体元件2粘接在岛状体1上的材料的话，则如图5所示，糊状材料6或焊锡埋入岛状体1的通孔5内，使密封树脂不能充填通孔5，其结果是存在不能得到由通孔5产生的固定效果的问题。
另外，为防止上述的糊状材料6或焊锡埋入岛状体1的通孔5而仅在未载置半导体元件2的岛状体1的周边部分上形成通孔5这样构成的半导体器件也为人们所知。但在这样的半导体器件中，由于对应于半导体元件2背面的岛状体1的部分上没有形成通孔，故存在该岛状体1的未形成通孔的部分和密封树脂之间易于产生剥离的问题。
还有，如以往那样，通过在岛状体1上以确保比较宽的相互间隔的方式形成通孔5，并在该确保了的间隔的区间内散布上述糊状材料6或焊锡，使糊状材料6或焊锡不埋入上述通孔5内而构成的半导体器件也为人们所知。但在该半导体器件中，由于有必要把通孔5的间隔取得较宽，因而通孔5的数量减少，易于产生密封树脂和岛状体1的剥离。另外，由于进入到通孔5的密封树脂直接与半导体元件2的背面接触，故存在易于产生半导体元件2的背面和密封树脂间的剥离，易于产生封装破裂的问题。
本发明是着眼于解决这种以往技术的问题而进行的，目的在于提供一种能够抑制封装破裂的发生并使制造成本低廉的树脂密封型半导体器件。
根据本发明的一种树脂密封型半导体器件，该装置包括一个具有一个岛状体的引线框架以及一个安装在该岛状体上的半导体元件，并用一种树脂将该引线框架和该半导体元件密封起来，在上述岛状体载置上述半导体元件的部分上形成多个通孔，用树脂制的薄膜材料把上述半导体元件粘接到上述岛状体上，
其特征在于，上述薄膜材料各边的尺寸比上述半导体元件的相应各边的尺寸短。
另外，本发明中，将上述薄膜材料形成为其各边的尺寸分别比半导体元件各边的尺寸至少短0．5mm以上。
还有，本发明中，上述多个通孔相互靠得很近，其相互的间隔至少在1．0mm以下。
此外，在本发明中，上述薄膜材料的弹性率在200℃的温度下低于10MPa。
在本发明的树脂密封型半导体器件中，由于用树脂制的薄膜材料进行半导体元件向岛状体的粘接，因而，即使在岛状体上以狭小的间距最密集地形成多个通孔，也不会像以往那样产生糊状材料和焊锡进入通孔的问题。由此，能够在岛状体上最密集地形成多个通孔，从而减少岛状体和密封树脂的剥离，能够抑制产生封装破裂。还有，由于半导体元件和岛状体之间夹有薄膜材料，因而不会像以往那样因半导体元件的背面和密封树脂直接接触而使得两者之间易于剥离。另外，由于夹在半导体元件和岛状体之间的该薄膜材料是树脂制成的，所以增大了该薄膜材料和密封树脂间的界面粘接力，大幅度地减少两者间剥离的发生，封装破裂亦大幅度地减少。此外，由于在岛状体上形成通孔而不是凹窝，因此，能够以成本低廉的冲孔方法制造岛状体(引线框架)。
还有，在本发明中，通过把上述薄膜材料各边的尺寸形成为至少比半导体元件各边的尺寸短0．5mm以上，防止薄膜材料的从与半导体元件的粘接面处露出的部分(边缘部分)从岛状体剥离而使岛状体和半导体元件的粘接性变坏。
另外，在本发明中，如果以相互靠近的方式最密集地形成上述多个通孔，使它们相互间隔至少低于1．0mm，则将增大由通孔产生的固定效果，即使密封树脂吸湿时，也能够防止密封树脂与岛状体的剥离。
此外，在本发明中，如果把上述薄膜材料的弹性率取为200℃温度下为10MPa，则可用该薄膜材料吸收硅系的半导体元件的热膨胀系数和铜系合金制的岛状体的热膨胀系数之差，从而防止发生在以往的半导体器件中的由半导体元件和岛状体的热膨胀系数差产生的翘曲。
图1是示出本发明一实施例的树脂密封型半导体器件的岛状体的平面图。
图2是本实施例的树脂密封型半导体器件的断面图。
图3是用于说明在基于本实施例的树脂密封型半导体器件中当薄膜材料的各边尺寸大于半导体元件各边尺寸时的不良状态的断面图。
图4是以往的具有形成了凹窝的岛状体的树脂密封型半导体器件的断面图。
图5是以往的具有形成了通孔的岛状体的树脂密封型半导体器件的断面图。
以下，根据附图说明本发明的实施例。图1是示出本实施例的树脂密封型半导体器件的用于载置半导体元件的岛状体的平面图，图2是示出在图1的岛状体上粘接半导体元件的一个实例的断面图。图1及图2中，2是半导体元件，11是岛状体，15是通孔。在本实施例中，如图2所示，用表面平坦且厚度均匀的树脂制薄膜材料12把半导体元件2和岛状体11粘接在一起。
作为该薄膜材料12，在本实施例中，使用例如如下的材料，即，图2的薄膜材料12，其厚度大约为25μm，含有银填充剂，为非导电性。该薄膜材料12是单层结构，保持热硬化特性，薄膜的正反面都具有粘接性。在把半导体元件2粘合到该薄膜材料12上时，通过把薄膜材料12在约230℃温度下加热，用约50g的负荷按压而确保粘接。除此之外，作为薄膜材料12，还能够使用通过增加银填充剂的含有率而确保导电性的材料、不是单层结构而是在基体材料的两个表面上都有粘接层的三层结构的材料、不是具有热硬化性而是具有热可塑性的树脂成分的材料等规格的材料。另外，在本实施例中，作为上述薄膜材料12也可以使用如特开平6-145639号公报所公开的、能够和以往的银膏那样在较低的温度下进行粘接时的热处理的、用于粘合的导电性粘接薄膜。
此外，在本实施例中，如图2所示，使薄膜材料12的各边长I小于半导体元件2的各边长L。这是因为若薄膜材料12的各边长度大于半导体元件2的相应边长，则如图3所示，薄膜材料12的从半导体元件2的粘接面处露出的部分12a从岛状体11上剥离，从而使半导体元件2和岛状体11的粘接性变坏。在本实施例中，由于通常半导体元件2的位置精度为±0．1mm、薄膜材料12的位置精度为±0．2mm，因而产生一侧(0．12+0．22)1/2=0．22mm的相对偏移，所以，在二侧使薄膜材料12的各边长度比半导体元件2的各边长度小0．5mm(＞0．22mm×2)以上。
另外，本实施例中，通孔15间的距离d(参照图1)为1．0mm以下。这是因为该距离d若大于1．0mm的话则在用户把该半导体器件安装于基板上时，如果密封树脂吸湿，则密封树脂从岛状体的背面剥离，由此产生封装破裂。
还有，在本实施例中，通孔15的直径D(参照图1)取为1．0mm以下。这是因为该直径D若大于1．0mm，则薄膜材料12下垂进入到通孔15内，在薄膜材料12和半导体元件2之间进入气泡。
进而，在本实施例中，特别是在岛状体11用铜系合金构成时，由于半导体元件2的硅热膨胀系数(约3．5×10-6 1／℃)和形成引线框架的铜合金热膨胀系数(约17×10-6 1／℃)相互差异较大，故有时会由于粘合后的温度变化产生翘曲(例如，参照特公平5-79173号公报的图5)。于是，为防止该翘曲的发生，在本实施例中，使薄膜材料12在200℃的高温下的弹性率低于10MPa。如果薄膜材料12在高温下(200℃)的弹性率低于10MPa的话，则如表1所示，由于薄膜材料12吸收硅和铜系合金的热膨胀系数之差，因而能够抑制伴随半导体器件粘合后的温度变化而产生的翘曲。
表1薄膜在高温下  6．5MPa    80MPa    400MPa的高温弹性率(200℃)长10mm的半导  10μm      20μm    50μm体元件的弯曲量(μm)
如上所述，若根据本发明，则由于在岛状体的整个面上最密集地(以狭小的间距)设置通孔，并使用树脂制的薄膜材料粘接半导体元件和岛状体，因而能够以低成本的冲孔方法制造岛状体(引线框架)，而且能够得到一种抗封装破裂能力强的树脂密封型半导体器件。
还有，通过使上述薄膜材料各边的尺寸至少比半导体元件各边的尺寸短0．5mm以上，可防止薄膜材料露出半导体元件粘接面的部分从岛状体剥离而使半导体元件和岛状体的粘接性变坏。
另外，如果以相互接近的方式密集地形成上述多个通孔，使其互相的间隔至少低于1．0mm，则可增大由通孔产生的结合效果，即使在密封树脂吸湿时也能够防止密封树脂和岛状体的剥离。
此外，如果把上述薄膜材料的弹性率取为在200℃的温度下低于10MPa，则用该薄膜材料能够吸收半导体元件的热膨胀系数和铜系合金的岛状体的热膨胀系数之差，从而防止发生在以往的半导体器件中的由于半导体元件和岛状体的热膨胀系数之差而产生的翘曲。

Claims (5)

1．一种树脂密封型半导体器件，该装置包括一个具有一个岛状体的引线框架以及一个安装在该岛状体上的半导体元件，并用一种树脂将该引线框架和该半导体元件密封起来，在上述岛状体载置上述半导体元件的部分上形成多个通孔，用树脂制的薄膜材料把上述半导体元件粘接到上述岛状体上，
其特征在于，上述薄膜材料各边的尺寸比上述半导体元件的相应各边的尺寸短。
2．如权利要求1的树脂密封型半导体器件，其特征在于，上述薄膜材料各边的尺寸至少比上述半导体元件各边的尺寸短0．5mm。
3．如权利要求1或2所述的树脂密封型半导体器件，其特征在于，上述多个通孔以相互靠近的方式形成并使其相互的间隔至少在1．0mm以下。
4．如权利要求1或2所述的树脂密封型半导体器件，其特征在于，上述薄膜材料的弹性率在200℃的温度下低于10MPa。
5．如权利要求3所述的树脂密封型半导体器件，其特征在于，上述薄膜材料的弹性率在200℃的温度下低于10MPa。
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