CN1107977C - 半导体器件 - Google Patents
半导体器件 Download PDFInfo
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- CN1107977C CN1107977C CN95121580A CN95121580A CN1107977C CN 1107977 C CN1107977 C CN 1107977C CN 95121580 A CN95121580 A CN 95121580A CN 95121580 A CN95121580 A CN 95121580A CN 1107977 C CN1107977 C CN 1107977C
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Abstract
本发明提供了一种半导体器件,包括:一个半导体片;一个含有一个半导体片固定部位的接线衬底;一个在接线衬底上的、并和半导体片的一个电极相连的电极;并且一层包括了密封半导体片的密封材料和在接线衬底上的电极的膜;其特征是,在接线衬底上至少提供了一个形成于半导体片固定部位中的通孔;在通孔边上围绕着通孔的周围形成一个突起,用于固定半导体片。
Description
技术领域
本发明涉及一种半导体器件,特别涉及的半导体器件包括一个半导体片,它粘接在接线衬底上固定半导体片的部位上,还包括一个半导体片的电极,它和接线衬底的电极相连。并且,半导体片,它的电极,以及接线衬底的电极都用密封材料封装。
背景技术
图3所示的是已知的半导体器件的结构。参看图3,此类半导体器件包括:一个接线衬底1,它是一个用树脂、金属、陶瓷等制造的基体,接线衬底1的表面上有一个铜箔一类的物体构成的导线;还包括一个半导体片3,它由粘合剂4粘接在接线衬底1表面的半导体片固定部位2上;还包括一个半导体片3的电极5和一个接线衬底1上的电极7,它们彼此之间用一根金线8作电连接(导线连接);以及包括一个由热固树脂(或如热塑树脂、紫外线固化树脂)组成的密封材料11,用于密封半导体片3和导线连接部分(半导体片3的电极5,接线衬底1上的电极7和金线8)。内连的接线衬底1上的电极7和半导体片固定部位2都是由铜箔形成的导线。
上述的接线衬底1上的导线(如半导体片固定部位2、电极7等)通常由敷铜箔叠压板的铜箔蚀刻法生成。在叠压板上包覆一层因特殊处理表面粗糙的铜箔,就可以获得敷铜箔叠压板。这样,铜箔可以刺进铜箔和叠压板之间的叠压板的内表面中。接线衬底1上裸露有不含导线的不平整表面,也就是说,在裸露面6上去除掉铜箔。
通常,上述半导体器件与另一个半导体器件或接线衬底间的电连接是用软焊法,如用锡焊。这样,为防止焊锡焊在接线衬底1表面不该焊的部分上,通常用一个保护膜10(防焊锡膜)把这部分包覆住。由于保护膜10防止焊料或镀层粘接到不该焊的部分,现有的方法是,在接线衬底1的表面上,除半导体片固定部位2和电极7外,都均匀地包覆上保护膜10。
在上述参照图3的已有的半导体器件中,半导体片3和用导线连接的连接部分(包括半导体片3的电极5,接线衬底1上的电极7和金线8)都被密封材料11包封住,使用如加热(或冷却、或紫外线辐照)的方法让密封材料11硬化后密封。然而,由于内连的接线衬底1和密封材料11之间的热胀系数不同,加热后冷却会引起接线衬底1翘变。图4(A)是一个产生翘变问题的接线衬底1的横截面图。这种翘变使密封材料11和接线衬底1的表面分离开,在接线衬底1和密封材料11间的内表面12上产生裂缝。因此,需要有一个防止翘变发生的方法。
此外,已有的半导体器件中,密封材料11和内连的接线衬底1从空气中吸潮。当焊锡加热时,这种被吸收的潮气就被气化膨胀,这样,如图4(B)所示,在粘合剂4和半导体片固定部位2之间就会使得固有低劣的粘接内表面12a分离开。这种分离不能被忽略,因为它可能进一步导致密封材料11和保护膜10之间出现内表面分离部分13,或者进一步导致保护膜10出现粘合处裂口14。这种内表面分离部分13和粘合处裂口14总起来说归于焊裂。
为解决上述问题,日本未审查公开的实用新型申请Nos.Hei5-48338到Hei5-48344提出一些技术提案。
提出的技术包括:把接线衬底上半导体片固定部位的电极和接线衬底的电极连在一起,在连接部分的外部提供一个框状或条状的突起、凹槽,或一个复杂的结构以便围住半导体片,并把半导体片连同这种突起、凹槽等之类的部位密封。提供这种使潮气进入半导体器件的通道延长了的凹槽,就拖延了潮气到达半导体片的时间。另外,突起增加了密封材料和接线衬底间的粘性,防止了在它们间产生分离。这样,总的来说,延长了半导体器件的寿命。
然而,在上述半导体器件的制造中,需要增加一道框状或条状的凹槽或突起的加工。增加的这一道加工是十分不利的,因为它最终要增加产品的制造工序和费用。并且,它对于防止焊裂产生是无效的。
发明内容
本发明的目的在于提供一种半导体器件,以防止半导体片粘到半导体片固定部位时粘合剂进入孔中。
根据本发明的一种半导体器件,包括:
一个半导体片;
一个含有一个半导体片固定部位的接线衬底;
一个在接线衬底上的、并和半导体片的一个电极相连的电极;并且
一层包括了密封半导体片的密封材料和在接线衬底上的电极的膜;
其特征是,在接线衬底上至少提供了一个形成于半导体片固定部位中的通孔;
在通孔边上围绕着通孔的周围形成一个突起,用于固定半导体片。
已被实现的本发明的目的是为了克服上面所提到的问题。因此,本发明提供一种半导体器件包括:一个粘接在接线衬底的半导体片固定部位上的半导体片;一个半导体片的电极和一个接线衬底上的电极,它们相互连接;以及密封半导体片及其电极、并密封接线衬底上的电极的密封材料。在这种器件中,热焊时因密封材料或接线衬底吸收的潮气膨胀所产生的焊裂,如密封材料和接线衬底间内表面的分离或密封材料的粘接失效,就被防止产生。并且,增加了可靠性和延长了寿命。
本发明的第一种形式是提供一种至少有一个通孔的半导体器件。通孔是在内连的接线衬底上的半导体片固定部位中的水蒸汽排出孔。
当锡焊时,接线衬底上的通孔把水蒸汽排引到外部,因而可以防止因胀力所产生的焊裂,这样,可消除焊裂问题。
本发明的第二种形式是提供一种在环绕水蒸汽排出孔周围形成突起的半导体器件,以便防止当把半导体片粘到半导体片固定部位时粘合剂进到孔中。这样,水蒸汽排出孔可以用这种方法构成而不会引起任何问题。
本发明的第三种形式是提供一种里面有一层保护膜的半导体器件。这层保护膜不仅防止焊锡或镀层从被焊或被镀敷的部分脱落,而且也防止焊锡或镀层从围绕半导体片固定部位的周围部分脱落。有了这层保护膜,器件所包含的密封材料和导线膜被除掉的接线衬底部分就可以紧紧接触在一起。
这种器件在围绕半导体片固定部位的周围没有形成保护膜,以便这个没有导线膜的周围部分不平整表面能和密封材料直接接触。这样,密封材料和接线衬底之间被牢固地粘合,于是能防止焊裂的产生。
附图说明
图1(A)是本发明一个半导体器件的实施例的平面视图。
图1(B)是沿图1(A)中B-B线的半导体器件的横向剖视图。
图2(A)是本发明另一个半导体器件的实施例的平面图。
图2(B)是沿图2(A)中B-B线的半导体器件的横向剖视图。
图3是一个已有类型的半导体器件的横向剖视图。
图4(A)是图3中所示的已有类型的半导体器件碰到的典型问题的横向剖视图和
图4(B)是图3中所示的已有类型的半导体器件碰到的另一个典型问题的横向剖视图。
具体实施方式
下面参照实施例和附图对本发明作进一步详细的说明。
图1(A)和图1(B)所示的是本发明半导体器件的一个实施例。图1(A)是一个接线衬底的平面图,图1(B)是图1(A)中沿B-B线剖视的半导体器件的横截面图。
本半导体器件的实施例和图3所示的已有半导体器件相似,但最大的区别在于,本半导体器件的实施例包括一个水蒸汽排出孔9,并且,由于保护膜10没有在半导体片固定部位2上形成,因此接线衬底的表面是裸露的。本发明和已有的半导体器件所共有的结构已在上文中作了说明,因此下文中省略不再说明。图上所画的相同的部分都由同样的符号表示。
参看图1(A)和1(B),接线衬底1上制备有水蒸汽排出通孔9。后面的工序是在通孔上面的区域里构成半导体片固定部位2。本半导体器件实施例的特征在于它有水蒸汽排出孔9。
这样,当使用锡焊作电连接把本发明的半导体器件安在另一个半导体器件或一个接线衬底上时,虽然密封材料11或接线衬底1中所含的水份加热时被气化,但通过水蒸汽排出孔9排出而不必考虑膨胀问题。因此,即使半导体片3和半导体片固定部位2的内表面间因粘接不牢先有分离,分离的扩散也会被停止。这样,焊接裂隙的产生,如参照图4(B)所述的密封材料11和接线衬底1间的内表面分离处13,或参照图4(B)以上所述的密封材料11或接线衬底1的粘接失效处14,就可以被避免。
此外,在本发明的半导体器件中,保护膜10还和铜箔一起从半导体片固定部位2的周围被去除掉,使基体不平整的表面敞露。这是本发明半导体器件的又一个特征。铜箔被去除掉的敞露面6位于半导体片3的四周。
这就是说,在加工的初始阶段,需要焊接或镀敷的部分上没有形成防止焊合或镀合的保护膜10(见图3),但是,在本发明的半导体器件中,不平整的基体的表面6同样是敞露的。这样,在密封材料11和接线衬底1的不平整的表面之间就会有一个紧密的粘合来防止密封材料11和接线衬底1之间出现裂隙。这样就提供了一个高可靠性和长寿的半导体器件。
图2(A)和图2(B)是本发明的半导体器件的一个改进的实施例。其中,图2(A)是一个接线衬底的平面视图,图2(B)是沿图2(A)中B-B线的半导体器件的横剖视图。
在上述半导体器件中,每一个水蒸汽排出孔9的周围都构成一个框状突起15。在把半导体片3粘接到半导体片固定部位2上的工序中,突起15防止粘合剂进到水蒸汽排出孔9里。这样,半导体器件就可以不受任何问题干扰顺利地制造出来。
这个改进实施例的半导体器件除突起15是新提供的以外,本质上和图1中所示的半导体器件相同。
最后总括说来,本发明第一种形式的半导体器件在接线衬底上至少提供了一个孔来排除水蒸汽。然后,当焊接时膨胀的气化的水就可以通过孔排到外边,因而由于膨胀力所产生的焊裂就可以被防止,于是能够消除焊裂的问题。
本发明第二种形式的半导体器件在围绕水蒸汽排孔的周围提供了一个突起。然后,在半导体片被粘接到半导体片固定部位的情况下也可以防止粘合剂进到通孔中。这样,水蒸汽排出孔可以在加工中制成而不会引起任何问题。
本发明的第三种形式的半导体器件是在围绕半导体片固定部位的周围地方不加保护膜。然后,上面没有导线膜的周围部分的不平整表面可以和密封材料紧密接触,这样,在密封材料和接线衬底间产生一个牢固的粘接,从而防止了焊裂的产生。
在参照实施例对本发明作详细说明后,很明显,一个熟练的技术人员不超出本发明的精神和范围可以对本发明作出改变和改进。
Claims (1)
1、一种半导体器件,包括:
一个半导体片;
一个含有一个半导体片固定部位的接线衬底;
一个在接线衬底上的、并和半导体片的一个电极相连的电极;并且
一层包括了密封半导体片的密封材料和在接线衬底上的电极的膜;
其特征是,在接线衬底上至少提供了一个形成于半导体片固定部位中的通孔;
在通孔边上围绕着通孔的周围形成一个突起,用于固定半导体片。
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JP331917/94 | 1994-12-09 | ||
JP33191794A JP3414017B2 (ja) | 1994-12-09 | 1994-12-09 | 半導体装置 |
JP331917/1994 | 1994-12-09 |
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CN00126052A Division CN1290037A (zh) | 1994-12-09 | 2000-08-24 | 半导体器件 |
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CN1107977C true CN1107977C (zh) | 2003-05-07 |
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CN95121580A Expired - Fee Related CN1107977C (zh) | 1994-12-09 | 1995-12-08 | 半导体器件 |
CN00126052A Pending CN1290037A (zh) | 1994-12-09 | 2000-08-24 | 半导体器件 |
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JP (1) | JP3414017B2 (zh) |
CN (2) | CN1107977C (zh) |
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JP3483720B2 (ja) * | 1997-02-12 | 2004-01-06 | 沖電気工業株式会社 | 半導体装置 |
JPH1154658A (ja) | 1997-07-30 | 1999-02-26 | Hitachi Ltd | 半導体装置及びその製造方法並びにフレーム構造体 |
JP2991172B2 (ja) | 1997-10-24 | 1999-12-20 | 日本電気株式会社 | 半導体装置 |
JP3147053B2 (ja) * | 1997-10-27 | 2001-03-19 | 日本電気株式会社 | 樹脂封止型ボールグリッドアレイicパッケージ及びその製造方法 |
JP4454792B2 (ja) * | 2000-05-18 | 2010-04-21 | 富士通マイクロエレクトロニクス株式会社 | 半導体装置 |
TW445608B (en) * | 2000-05-19 | 2001-07-11 | Siliconware Precision Industries Co Ltd | Semiconductor package and manufacturing method thereof of lead frame without flashing |
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US7368391B2 (en) * | 2002-04-10 | 2008-05-06 | Micron Technology, Inc. | Methods for designing carrier substrates with raised terminals |
JP2005142189A (ja) * | 2003-11-04 | 2005-06-02 | Toyota Industries Corp | 半導体装置 |
EP1783827A4 (en) * | 2004-06-01 | 2009-10-28 | Senju Metal Industry Co | BRAZING METHOD, BRAZING PASTILLE FOR MATRIX BONDING, METHOD FOR MANUFACTURING BRAZING PASTILLE FOR MATRIX BONDING, AND ELECTRONIC COMPONENT |
US20060261498A1 (en) * | 2005-05-17 | 2006-11-23 | Micron Technology, Inc. | Methods and apparatuses for encapsulating microelectronic devices |
EP1983567B1 (en) * | 2006-02-03 | 2018-08-15 | Mtex Matsumura Corporation | Hollow package made of resin, and manufacturing method therefor |
US7833456B2 (en) * | 2007-02-23 | 2010-11-16 | Micron Technology, Inc. | Systems and methods for compressing an encapsulant adjacent a semiconductor workpiece |
JP5272191B2 (ja) * | 2007-08-31 | 2013-08-28 | 三菱電機株式会社 | 半導体装置および半導体装置の製造方法 |
US20090137069A1 (en) * | 2007-11-28 | 2009-05-28 | Powertech Technology Inc. | Chip packaging process including simpification and mergence of burn-in test and high temperature test |
JP2010050150A (ja) * | 2008-08-19 | 2010-03-04 | Panasonic Corp | 半導体装置及び半導体モジュール |
CN102270059A (zh) * | 2011-06-21 | 2011-12-07 | 信利半导体有限公司 | 一种触摸屏与显示屏贴合的方法 |
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- 1994-12-09 JP JP33191794A patent/JP3414017B2/ja not_active Expired - Fee Related
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1995
- 1995-12-07 US US08/568,668 patent/US5767568A/en not_active Expired - Fee Related
- 1995-12-08 CN CN95121580A patent/CN1107977C/zh not_active Expired - Fee Related
- 1995-12-09 TW TW084113140A patent/TW365059B/zh active
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1997
- 1997-12-30 US US09/000,784 patent/US5917234A/en not_active Expired - Fee Related
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Also Published As
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CN1290037A (zh) | 2001-04-04 |
US5917234A (en) | 1999-06-29 |
JP3414017B2 (ja) | 2003-06-09 |
US5767568A (en) | 1998-06-16 |
CN1132412A (zh) | 1996-10-02 |
TW365059B (en) | 1999-07-21 |
JPH08167678A (ja) | 1996-06-25 |
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