GB2080028B - Adhesive layers for bonding metal layers to semiconductor - Google Patents

Adhesive layers for bonding metal layers to semiconductor

Info

Publication number
GB2080028B
GB2080028B GB8121778A GB8121778A GB2080028B GB 2080028 B GB2080028 B GB 2080028B GB 8121778 A GB8121778 A GB 8121778A GB 8121778 A GB8121778 A GB 8121778A GB 2080028 B GB2080028 B GB 2080028B
Authority
GB
United Kingdom
Prior art keywords
layers
major surface
semiconductor
bonding metal
adhesive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB8121778A
Other versions
GB2080028A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of GB2080028A publication Critical patent/GB2080028A/en
Application granted granted Critical
Publication of GB2080028B publication Critical patent/GB2080028B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/492—Bases or plates or solder therefor
    • H01L23/4924—Bases or plates or solder therefor characterised by the materials
    • H01L23/4926—Bases or plates or solder therefor characterised by the materials the materials containing semiconductor material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28525—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising semiconducting material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Die Bonding (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

The invention relates to a semiconductor device having a disk-shaped semiconductor body in which on the side of a first major surface at least one circuit element is formed and in which a second major surface present opposite to the first major surface is covered with an adhesive layer on which at least one metal layer is provided, which metal layer is bonded to a carrier. According to the invention, the adhesive layer is formed of doped amorphous silicon of the same conductivity type as the semiconductor body on the side of the second major surface.
GB8121778A 1980-07-18 1981-07-15 Adhesive layers for bonding metal layers to semiconductor Expired GB2080028B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL8004139A NL8004139A (en) 1980-07-18 1980-07-18 SEMICONDUCTOR DEVICE.

Publications (2)

Publication Number Publication Date
GB2080028A GB2080028A (en) 1982-01-27
GB2080028B true GB2080028B (en) 1984-03-28

Family

ID=19835640

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8121778A Expired GB2080028B (en) 1980-07-18 1981-07-15 Adhesive layers for bonding metal layers to semiconductor

Country Status (8)

Country Link
US (1) US4476483A (en)
JP (1) JPS5752144A (en)
CA (1) CA1176764A (en)
DE (1) DE3124879A1 (en)
FR (1) FR2487123B1 (en)
GB (1) GB2080028B (en)
IE (1) IE51997B1 (en)
NL (1) NL8004139A (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3335184A1 (en) * 1983-09-28 1985-04-04 Siemens AG, 1000 Berlin und 8000 München METHOD FOR PRODUCING SEMICONDUCTOR COMPONENTS
US4905075A (en) * 1986-05-05 1990-02-27 General Electric Company Hermetic semiconductor enclosure
DE3823347A1 (en) * 1988-07-09 1990-01-11 Semikron Elektronik Gmbh Power semiconductor element
JP2731040B2 (en) * 1991-02-05 1998-03-25 三菱電機株式会社 Method for manufacturing semiconductor device
US5441914A (en) * 1994-05-02 1995-08-15 Motorola Inc. Method of forming conductive interconnect structure
US5998237A (en) * 1996-09-17 1999-12-07 Enthone-Omi, Inc. Method for adding layers to a PWB which yields high levels of copper to dielectric adhesion
US7635635B2 (en) * 2006-04-06 2009-12-22 Fairchild Semiconductor Corporation Method for bonding a semiconductor substrate to a metal substrate

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1514111C3 (en) * 1965-01-29 1973-09-20 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Method for soldering semiconductor wafers with their connection electrodes
GB1039257A (en) * 1965-05-21 1966-08-17 Standard Telephones Cables Ltd Semiconductor devices
DE1283970B (en) * 1966-03-19 1968-11-28 Siemens Ag Metallic contact on a semiconductor component
DE1806980A1 (en) * 1967-11-15 1969-06-19 Fairchild Camera Instr Co Semiconductor component
DE1614668B2 (en) * 1967-12-01 1974-08-29 Semikron Gesellschaft Fuer Gleichrichterbau Und Elektronik Mbh, 8500 Nuernberg Semiconductor arrangement with large-area, easily solderable contact electrodes and process for their production
DE1803489A1 (en) * 1968-10-17 1970-05-27 Siemens Ag Method for manufacturing a semiconductor component
FR2085358A1 (en) * 1970-04-13 1971-12-24 Comp Generale Electricite
DE2031078A1 (en) * 1970-06-24 1971-12-30 Licentia Gmbh Semiconductor diode - with migration - inhibiting intermediate contact layers
DE2109508C2 (en) * 1971-03-01 1985-04-04 General Electric Co., Schenectady, N.Y. Thyristor
DE2221582A1 (en) * 1971-05-03 1973-01-18 Motorola Inc SEMI-CONDUCTOR ARRANGEMENT WITH FLAT-LAYING BORDER LAYER, AND PROCESS FOR PRODUCING THE SAME
US4106051A (en) * 1972-11-08 1978-08-08 Ferranti Limited Semiconductor devices
DE2930779C2 (en) * 1978-07-28 1983-08-04 Tokyo Shibaura Denki K.K., Kawasaki, Kanagawa Semiconductor device
US4251287A (en) * 1979-10-01 1981-02-17 The University Of Delaware Amorphous semiconductor solar cell

Also Published As

Publication number Publication date
GB2080028A (en) 1982-01-27
JPS6322458B2 (en) 1988-05-12
FR2487123A1 (en) 1982-01-22
DE3124879A1 (en) 1982-03-18
NL8004139A (en) 1982-02-16
JPS5752144A (en) 1982-03-27
IE811621L (en) 1982-01-18
CA1176764A (en) 1984-10-23
US4476483A (en) 1984-10-09
DE3124879C2 (en) 1991-01-31
IE51997B1 (en) 1987-05-13
FR2487123B1 (en) 1986-06-20

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19940715