GB1039257A - Semiconductor devices - Google Patents
Semiconductor devicesInfo
- Publication number
- GB1039257A GB1039257A GB21600/65A GB2160065A GB1039257A GB 1039257 A GB1039257 A GB 1039257A GB 21600/65 A GB21600/65 A GB 21600/65A GB 2160065 A GB2160065 A GB 2160065A GB 1039257 A GB1039257 A GB 1039257A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- grown
- semi
- wafer
- conductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 238000000576 coating method Methods 0.000 abstract 2
- 239000011521 glass Substances 0.000 abstract 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 2
- 229910052737 gold Inorganic materials 0.000 abstract 2
- 239000010931 gold Substances 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 abstract 2
- 229910000679 solder Inorganic materials 0.000 abstract 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 abstract 1
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 238000005275 alloying Methods 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 229910052804 chromium Inorganic materials 0.000 abstract 1
- 239000011651 chromium Substances 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000005538 encapsulation Methods 0.000 abstract 1
- 239000011810 insulating material Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 229920006395 saturated elastomer Polymers 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
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- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
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- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/83801—Soldering or alloying
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- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
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- H01L2924/078—Adhesive characteristics other than chemical
- H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
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- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19042—Component type being an inductor
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- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30105—Capacitance
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Recrystallisation Techniques (AREA)
- Die Bonding (AREA)
Abstract
1,039,257. Semi-conductor devices. STANDARD TELEPHONES & CABLES Ltd. May 21, 1965, No. 21600/65. Heading H1K. In the manufacture of a semi-conductor device a layer of semi-conductor material is grown on one face of a semi-conductor wafer on the other side of which is grown or deposited an insulating layer which, after the formation of the semiconductor device in or on the grown semiconductor layer, is bonded directly or indirectly to a metallic member which may form part of the device encapsulation. In one embodiment a medium resistivity layer of N-type silicon is grown on one side of a low resistivity wafer of the same material. The other side of the wafer is lapped to reduce its thickness. The body is then heated in oxygen saturated with steam to produce silica coatings on both faces. A very high resistivity layer of polycrystalline silicon is then deposited on to the silica coating on the lapped surface. On the other side of the body transistors are fabricated in the grown semiconductor layer by use of the planar process. The wafer is diced after evaporated and alloyed aluminium contacts have been provided for emitter, base, and collector of each transistor. Each die is bonded to a metallic header with gold or solder glass. In a second embodiment the starting wafer is of high resistivity and is of the opposite conductivity type to a low resistivity semi-conductor layer grown on one of its faces. A medium resistivity layer is grown in ohmic contact on the first grown layer and semi-conductor devices made in this second layer. An insulating layer is deposited or grown on the other wafer face. The structure may be bonded to a metallic header either by a metallic layer graded from chromium at the insulating layer to gold at the header, or by solder glass. Semi-conductors other than silicon may be used and silicon nitride or silicon monoxide may be used as the insulating material. Methods other than diffusion may be used to make the devices, for example localized epitaxial deposition or alloying.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB21600/65A GB1039257A (en) | 1965-05-21 | 1965-05-21 | Semiconductor devices |
DE19661564147 DE1564147A1 (en) | 1965-05-21 | 1966-05-07 | Semiconductor device and manufacturing process |
NL6606800A NL6606800A (en) | 1965-05-21 | 1966-05-17 | |
FR62316A FR1500841A (en) | 1965-05-21 | 1966-05-20 | Manufacturing process of a silicon planar transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB21600/65A GB1039257A (en) | 1965-05-21 | 1965-05-21 | Semiconductor devices |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1039257A true GB1039257A (en) | 1966-08-17 |
Family
ID=10165646
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB21600/65A Expired GB1039257A (en) | 1965-05-21 | 1965-05-21 | Semiconductor devices |
Country Status (4)
Country | Link |
---|---|
DE (1) | DE1564147A1 (en) |
FR (1) | FR1500841A (en) |
GB (1) | GB1039257A (en) |
NL (1) | NL6606800A (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL8004139A (en) * | 1980-07-18 | 1982-02-16 | Philips Nv | SEMICONDUCTOR DEVICE. |
DE10149774A1 (en) * | 2001-10-09 | 2003-04-24 | Bosch Gmbh Robert | Process for packing electronic modules comprises applying a power semiconductor chip on a base plate, applying a logic chip on the base plate, connecting the logic chip with the semiconductor chip, and packing the module |
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1965
- 1965-05-21 GB GB21600/65A patent/GB1039257A/en not_active Expired
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1966
- 1966-05-07 DE DE19661564147 patent/DE1564147A1/en active Pending
- 1966-05-17 NL NL6606800A patent/NL6606800A/xx unknown
- 1966-05-20 FR FR62316A patent/FR1500841A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
FR1500841A (en) | 1967-11-10 |
DE1564147A1 (en) | 1969-10-02 |
NL6606800A (en) | 1966-11-22 |
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