CN113241101B - 使用互补电压电源的分裂栅闪存系统 - Google Patents

使用互补电压电源的分裂栅闪存系统 Download PDF

Info

Publication number
CN113241101B
CN113241101B CN202110506608.1A CN202110506608A CN113241101B CN 113241101 B CN113241101 B CN 113241101B CN 202110506608 A CN202110506608 A CN 202110506608A CN 113241101 B CN113241101 B CN 113241101B
Authority
CN
China
Prior art keywords
terminal
circuit
voltage
negative
nmos transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202110506608.1A
Other languages
English (en)
Chinese (zh)
Other versions
CN113241101A (zh
Inventor
H·V·陈
A·刘
T·于
H·Q·阮
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Silicon Storage Technology Inc
Original Assignee
Silicon Storage Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Silicon Storage Technology Inc filed Critical Silicon Storage Technology Inc
Priority to CN202110506608.1A priority Critical patent/CN113241101B/zh
Publication of CN113241101A publication Critical patent/CN113241101A/zh
Application granted granted Critical
Publication of CN113241101B publication Critical patent/CN113241101B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0425—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a merged floating gate and select transistor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/10—Decoders
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
    • G11C2216/02—Structural aspects of erasable programmable read-only memories
    • G11C2216/04—Nonvolatile memory cell provided with a separate control gate for erasing the cells, i.e. erase gate, independent of the normal read control gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)
  • Logic Circuits (AREA)
  • Semiconductor Memories (AREA)
CN202110506608.1A 2015-01-21 2015-12-04 使用互补电压电源的分裂栅闪存系统 Active CN113241101B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202110506608.1A CN113241101B (zh) 2015-01-21 2015-12-04 使用互补电压电源的分裂栅闪存系统

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US14/602,262 US9361995B1 (en) 2015-01-21 2015-01-21 Flash memory system using complementary voltage supplies
US14/602262 2015-01-21
CN201580074175.XA CN107210056B (zh) 2015-01-21 2015-12-04 使用互补电压电源的分裂栅闪存系统
PCT/US2015/064082 WO2016118238A1 (en) 2015-01-21 2015-12-04 Split gate flash memory system using complementary voltage supplies
CN202110506608.1A CN113241101B (zh) 2015-01-21 2015-12-04 使用互补电压电源的分裂栅闪存系统

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201580074175.XA Division CN107210056B (zh) 2015-01-21 2015-12-04 使用互补电压电源的分裂栅闪存系统

Publications (2)

Publication Number Publication Date
CN113241101A CN113241101A (zh) 2021-08-10
CN113241101B true CN113241101B (zh) 2024-01-30

Family

ID=54884436

Family Applications (3)

Application Number Title Priority Date Filing Date
CN202110506608.1A Active CN113241101B (zh) 2015-01-21 2015-12-04 使用互补电压电源的分裂栅闪存系统
CN202110506606.2A Pending CN113241100A (zh) 2015-01-21 2015-12-04 使用互补电压电源的分裂栅闪存系统
CN201580074175.XA Active CN107210056B (zh) 2015-01-21 2015-12-04 使用互补电压电源的分裂栅闪存系统

Family Applications After (2)

Application Number Title Priority Date Filing Date
CN202110506606.2A Pending CN113241100A (zh) 2015-01-21 2015-12-04 使用互补电压电源的分裂栅闪存系统
CN201580074175.XA Active CN107210056B (zh) 2015-01-21 2015-12-04 使用互补电压电源的分裂栅闪存系统

Country Status (7)

Country Link
US (4) US9361995B1 (enExample)
EP (2) EP3629331B1 (enExample)
JP (2) JP2018504731A (enExample)
KR (2) KR102153247B1 (enExample)
CN (3) CN113241101B (enExample)
TW (2) TWI621126B (enExample)
WO (1) WO2016118238A1 (enExample)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9953719B2 (en) 2016-05-18 2018-04-24 Silicon Storage Technology, Inc. Flash memory cell and associated decoders
US9911501B2 (en) 2016-05-24 2018-03-06 Silicon Storage Technology, Inc. Sensing amplifier comprising a built-in sensing offset for flash memory devices
US10684669B1 (en) * 2017-07-28 2020-06-16 Maxim Integrated Products, Inc. Logic level shifter interface between power domains
EP3462617A4 (en) * 2017-08-17 2019-08-07 Shenzhen Goodix Technology Co., Ltd. ADJUSTABLE LEVER WITH POSITION AND NEGATIVE VOLTAGE
US10796763B2 (en) 2018-01-26 2020-10-06 Stmicroelectronics (Rousset) Sas Method for programming a split-gate memory cell and corresponding memory device
US10910061B2 (en) * 2018-03-14 2021-02-02 Silicon Storage Technology, Inc. Method and apparatus for programming analog neural memory in a deep learning artificial neural network
CN108648777B (zh) * 2018-05-10 2020-08-11 上海华虹宏力半导体制造有限公司 双分离栅闪存的编程时序电路及方法
US10847225B2 (en) * 2018-06-20 2020-11-24 Microchip Technology Incorporated Split-gate flash memory cell with improved read performance
DE102019132067A1 (de) 2019-01-25 2020-07-30 Taiwan Semiconductor Manufacturing Co., Ltd. Strombegrenzer für speichervorrichtung
US10991426B2 (en) * 2019-01-25 2021-04-27 Taiwan Semiconductor Manufacturing Company, Ltd. Memory device current limiter
CN111916432B (zh) * 2019-05-08 2022-09-09 深圳第三代半导体研究院 一种均匀发光的正装集成单元二极管芯片
US11070208B2 (en) * 2019-09-17 2021-07-20 Taiwan Semiconductor Manufacturing Company, Ltd. Level shifter
US11532354B2 (en) 2020-03-22 2022-12-20 Silicon Storage Technology, Inc. Precision tuning of a page or word of non-volatile memory cells and associated high voltage circuits for an analog neural memory array in an artificial neural network
FR3113976B1 (fr) 2020-09-07 2023-07-28 St Microelectronics Rousset Mémoire type mémoire morte électriquement programmable et effaçable
KR102789800B1 (ko) 2020-09-16 2025-04-01 삼성전자주식회사 네거티브 레벨 쉬프터 및 이를 포함하는 비휘발성 메모리 장치
CN112185447B (zh) * 2020-09-29 2023-08-01 中科南京智能技术研究院 一种8管双分裂控制存储单元、存储阵列及存内计算装置
CN114822657A (zh) * 2020-12-21 2022-07-29 长江存储科技有限责任公司 半导体器件的深阱电压的控制方法
JP7701988B2 (ja) * 2021-05-18 2025-07-02 シリコン ストーリッジ テクノロージー インコーポレイテッド Ｐ基板内のディープｎウェル内のｐウェル内に形成された不揮発性メモリセルアレイ
US11405039B1 (en) 2021-06-02 2022-08-02 Sandisk Technologies Llc Level shifter with improved negative voltage capability
US11942972B2 (en) 2021-06-28 2024-03-26 Skyworks Solutions, Inc. Radio frequency switch control circuitry
WO2023091172A1 (en) 2021-11-22 2023-05-25 Silicon Storage Technology, Inc. Address fault detection in a memory system
US12336180B2 (en) * 2022-08-08 2025-06-17 Taiwan Semiconductor Manufacturing Company, Ltd. Memory cell array with increased source bias voltage
US12463647B2 (en) 2022-11-24 2025-11-04 Nxp B.V. Level shifter and multi-voltage-domain circuits
CN117198362B (zh) * 2023-09-01 2024-10-25 厦门半导体工业技术研发有限公司 存储器装置的操作方法、存储器装置、设备及存储介质
IT202300020436A1 (it) 2023-10-03 2025-04-03 St Microelectronics Int Nv Circuito decodificatore di riga e corrispondente procedimento di funzionamento

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004234739A (ja) * 2003-01-29 2004-08-19 Renesas Technology Corp 不揮発性半導体記憶装置
JP2007149186A (ja) * 2005-11-25 2007-06-14 Renesas Technology Corp 不揮発性半導体記憶装置
KR20100010673A (ko) * 2008-07-23 2010-02-02 주식회사 하이닉스반도체 비휘발성 메모리 장치, 그의 독출 및 구동방법
CN103311252A (zh) * 2012-03-08 2013-09-18 力旺电子股份有限公司 具有可编程可擦除的单一多晶硅层非易失性存储器
CN104285257A (zh) * 2012-03-13 2015-01-14 硅存储技术公司 非易失性存储器装置及其操作方法

Family Cites Families (60)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5396459A (en) * 1992-02-24 1995-03-07 Sony Corporation Single transistor flash electrically programmable memory cell in which a negative voltage is applied to the nonselected word line
US5331188A (en) * 1992-02-25 1994-07-19 International Business Machines Corporation Non-volatile DRAM cell
JPH0758212A (ja) * 1993-08-19 1995-03-03 Sony Corp Ｃｍｏｓ集積回路
US5515319A (en) * 1993-10-12 1996-05-07 Texas Instruments Incorporated Non-volatile memory cell and level shifter
CN1187907A (zh) * 1995-07-17 1998-07-15 西门子公司 电可擦除可编程的、非易失的存储单元
KR100481841B1 (ko) * 1997-11-25 2005-08-25 삼성전자주식회사 음의고전압을방전시키기위한회로를구비한플래시메모리장치
JP3389856B2 (ja) * 1998-03-24 2003-03-24 日本電気株式会社 半導体装置
KR19990088517A (ko) * 1998-05-22 1999-12-27 마 유에 예일 비휘발성메모리셀구조및비휘발성메모리셀을작동시키는방법
US6005810A (en) * 1998-08-10 1999-12-21 Integrated Silicon Solution, Inc. Byte-programmable flash memory having counters and secondary storage for disturb control during program and erase operations
US6757196B1 (en) * 2001-03-22 2004-06-29 Aplus Flash Technology, Inc. Two transistor flash memory cell for use in EEPROM arrays with a programmable logic device
US6477091B2 (en) * 2001-03-30 2002-11-05 Intel Corporation Method, apparatus, and system to enhance negative voltage switching
US20020149067A1 (en) * 2001-04-12 2002-10-17 Mitros Jozef C. Isolated high voltage MOS transistor
TW565846B (en) * 2001-07-06 2003-12-11 Halo Lsi Inc Twin MONOS array metal bit organization and single cell operation
US6798008B2 (en) * 2002-03-19 2004-09-28 02Ic, Inc. Non-volatile dynamic random access memory
JP2004095893A (ja) * 2002-08-30 2004-03-25 Nec Electronics Corp 半導体記憶装置及びその制御方法と製造方法
US7005338B2 (en) * 2002-09-19 2006-02-28 Promos Technologies Inc. Nonvolatile memory cell with a floating gate at least partially located in a trench in a semiconductor substrate
JP3865238B2 (ja) * 2002-10-29 2007-01-10 株式会社ルネサステクノロジ 不揮発性半導体メモリ
US7031192B1 (en) * 2002-11-08 2006-04-18 Halo Lsi, Inc. Non-volatile semiconductor memory and driving method
JP4156986B2 (ja) * 2003-06-30 2008-09-24 株式会社東芝 不揮発性半導体記憶装置
GB2408644B (en) * 2003-11-26 2007-04-25 Wolfson Ltd Amplifier
US7570466B2 (en) * 2005-03-01 2009-08-04 Intel Corporation Dual mode negative voltage switching
JP4683995B2 (ja) * 2005-04-28 2011-05-18 ルネサスエレクトロニクス株式会社 不揮発性半導体記憶装置
US7242051B2 (en) * 2005-05-20 2007-07-10 Silicon Storage Technology, Inc. Split gate NAND flash memory structure and array, method of programming, erasing and reading thereof, and method of manufacturing
US7592661B1 (en) * 2005-07-29 2009-09-22 Cypress Semiconductor Corporation CMOS embedded high voltage transistor
KR100780951B1 (ko) * 2006-02-15 2007-12-03 삼성전자주식회사 레벨 쉬프터 회로
ITMI20070977A1 (it) * 2007-05-15 2008-11-16 St Microelectronics Srl "circuito traslatore di livello e dispositivo di memoria comprendente detto circuito"
US20090039410A1 (en) * 2007-08-06 2009-02-12 Xian Liu Split Gate Non-Volatile Flash Memory Cell Having A Floating Gate, Control Gate, Select Gate And An Erase Gate With An Overhang Over The Floating Gate, Array And Method Of Manufacturing
JP2010097676A (ja) * 2008-10-20 2010-04-30 Toshiba Corp 不揮発性半導体記憶装置およびその閾値制御方法
JP2009146521A (ja) * 2007-12-14 2009-07-02 Sharp Corp 不揮発性半導体記憶装置のワード線駆動回路
US8391078B2 (en) * 2008-02-12 2013-03-05 Chip Memory Technology, Inc. Method and apparatus of operating a non-volatile DRAM
KR20100023280A (ko) * 2008-08-21 2010-03-04 삼성전자주식회사 플래시 메모리 장치 및 그것을 포함하는 메모리 시스템
KR20100035445A (ko) * 2008-09-26 2010-04-05 삼성전자주식회사 비휘발성 메모리 장치 및 그 구동 방법
US8228726B2 (en) * 2008-12-14 2012-07-24 Chip Memory Technology, Inc. N-channel SONOS non-volatile memory for embedded in logic
US8351264B2 (en) * 2008-12-19 2013-01-08 Unity Semiconductor Corporation High voltage switching circuitry for a cross-point array
JP2010257559A (ja) * 2009-04-22 2010-11-11 Genusion Inc 高電圧発生回路およびそれを備える不揮発性半導体記憶装置
US8283964B2 (en) * 2009-07-22 2012-10-09 Qualcomm, Incorporated Level shifters and high voltage logic circuits
CN101640205B (zh) * 2009-08-25 2012-08-08 上海宏力半导体制造有限公司 一种闪存
JP5537099B2 (ja) * 2009-09-08 2014-07-02 ルネサスエレクトロニクス株式会社 半導体装置
IT1397227B1 (it) * 2009-12-30 2013-01-04 St Microelectronics Srl Dispositivo di memoria con programmazione e cancellazione basata su effetto fowler-nordheim
WO2012036739A2 (en) * 2010-09-15 2012-03-22 Aplus Flash Technology, Inc. An eeprom-based, data-oriented combo nvm design
US8933500B2 (en) * 2010-09-15 2015-01-13 Aplus Flash Technology, Inc. EEPROM-based, data-oriented combo NVM design
US8106701B1 (en) * 2010-09-30 2012-01-31 Sandisk Technologies Inc. Level shifter with shoot-through current isolation
US8325521B2 (en) * 2010-10-08 2012-12-04 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and inhibited operation of flash memory with split gate
KR101772582B1 (ko) * 2011-07-06 2017-08-30 삼성전자주식회사 음전압을 제공하는 비휘발성 메모리 장치
US8923049B2 (en) * 2011-09-09 2014-12-30 Aplus Flash Technology, Inc 1T1b and 2T2b flash-based, data-oriented EEPROM design
JP5219170B2 (ja) * 2011-09-21 2013-06-26 株式会社フローディア 不揮発性半導体記憶装置
WO2013075067A1 (en) * 2011-11-18 2013-05-23 Aplus Flash Technology, Inc. Low voltage page buffer for use in nonvolatile memory design
US8570809B2 (en) * 2011-12-02 2013-10-29 Cypress Semiconductor Corp. Flash memory devices and systems
US8750051B1 (en) * 2011-12-02 2014-06-10 Cypress Semiconductor Corporation Systems and methods for providing high voltage to memory devices
KR20130098002A (ko) * 2012-02-27 2013-09-04 삼성전자주식회사 수직형 저항 메모리 장치의 프로그램 방법
KR20130098643A (ko) * 2012-02-28 2013-09-05 삼성전자주식회사 불휘발성 메모리 장치 및 그것을 포함하는 임베디드 메모리 시스템
KR20130104270A (ko) * 2012-03-13 2013-09-25 삼성전자주식회사 스플릿 게이트형 비휘발성 메모리 장치 및 스플릿 게이트형 비휘발성 메모리 장치가 임베디드된 반도체 장치
EP2882104B1 (en) * 2012-08-01 2019-12-11 Renesas Electronics Corporation Level shift circuit, semiconductor device
CN102856338B (zh) * 2012-09-19 2015-10-28 南京大学 分裂栅型mosfet成像探测器及其操作方法
US9123401B2 (en) * 2012-10-15 2015-09-01 Silicon Storage Technology, Inc. Non-volatile memory array and method of using same for fractional word programming
CN104050999B (zh) * 2013-03-11 2016-12-28 北京兆易创新科技股份有限公司 一种为浮栅存储器提供正负高压的字线驱动方法
US8867281B2 (en) * 2013-03-15 2014-10-21 Silicon Storage Technology, Inc. Hybrid chargepump and regulation means and method for flash memory device
US9293205B2 (en) * 2013-09-14 2016-03-22 Aplus Flash Technology, Inc Multi-task concurrent/pipeline NAND operations on all planes
US20150155039A1 (en) * 2013-12-02 2015-06-04 Silicon Storage Technology, Inc. Three-Dimensional Flash NOR Memory System With Configurable Pins
US9286982B2 (en) * 2014-08-08 2016-03-15 Silicon Storage Technology, Inc. Flash memory system with EEPROM functionality

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004234739A (ja) * 2003-01-29 2004-08-19 Renesas Technology Corp 不揮発性半導体記憶装置
JP2007149186A (ja) * 2005-11-25 2007-06-14 Renesas Technology Corp 不揮発性半導体記憶装置
KR20100010673A (ko) * 2008-07-23 2010-02-02 주식회사 하이닉스반도체 비휘발성 메모리 장치, 그의 독출 및 구동방법
CN103311252A (zh) * 2012-03-08 2013-09-18 力旺电子股份有限公司 具有可编程可擦除的单一多晶硅层非易失性存储器
CN104285257A (zh) * 2012-03-13 2015-01-14 硅存储技术公司 非易失性存储器装置及其操作方法

Also Published As

Publication number Publication date
CN113241101A (zh) 2021-08-10
CN107210056B (zh) 2021-05-18
EP3629331A1 (en) 2020-04-01
EP3248193A1 (en) 2017-11-29
EP3629331B1 (en) 2023-10-04
US9361995B1 (en) 2016-06-07
JP2018504731A (ja) 2018-02-15
US10325666B2 (en) 2019-06-18
EP3248193B1 (en) 2020-02-05
TW201727655A (zh) 2017-08-01
TWI587305B (zh) 2017-06-11
US9508443B2 (en) 2016-11-29
KR20170106442A (ko) 2017-09-20
KR20190139341A (ko) 2019-12-17
JP2019169233A (ja) 2019-10-03
CN113241100A (zh) 2021-08-10
KR102153247B1 (ko) 2020-09-07
TW201638962A (zh) 2016-11-01
US20170076809A1 (en) 2017-03-16
WO2016118238A1 (en) 2016-07-28
TWI621126B (zh) 2018-04-11
US20160240260A1 (en) 2016-08-18
JP6911075B2 (ja) 2021-07-28
US20190115088A1 (en) 2019-04-18
US10186322B2 (en) 2019-01-22
CN107210056A (zh) 2017-09-26

Similar Documents

Publication Publication Date Title
CN113241101B (zh) 使用互补电压电源的分裂栅闪存系统
CN107077891B (zh) 非易失性分裂栅存储器装置及其操作方法
CN104285257B (zh) 非易失性存储器装置及其操作方法
TWI679643B (zh) 快閃路徑中的高速高電壓耐受性電路
KR20180042421A (ko) 소스 라인 풀다운 회로로서 더미 메모리 셀을 사용하는 플래시 메모리 시스템
KR20110000494A (ko) 불휘발성 반도체 메모리 장치 및 그것의 방전 회로

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant