KR102153247B1 - 상보성 전압 서플라이들을 사용하는 분리형 게이트 플래시 메모리 시스템 - Google Patents

상보성 전압 서플라이들을 사용하는 분리형 게이트 플래시 메모리 시스템 Download PDF

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KR102153247B1
KR102153247B1 KR1020197036378A KR20197036378A KR102153247B1 KR 102153247 B1 KR102153247 B1 KR 102153247B1 KR 1020197036378 A KR1020197036378 A KR 1020197036378A KR 20197036378 A KR20197036378 A KR 20197036378A KR 102153247 B1 KR102153247 B1 KR 102153247B1
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high voltage
voltage
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gate
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KR20190139341A (ko
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히예우 반 트란
안 리
투안 부
헝 큐옥 구엔
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실리콘 스토리지 테크놀로지 인크
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0425—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a merged floating gate and select transistor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/10—Decoders
    • H01L27/11521—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
    • G11C2216/02—Structural aspects of erasable programmable read-only memories
    • G11C2216/04—Nonvolatile memory cell provided with a separate control gate for erasing the cells, i.e. erase gate, independent of the normal read control gate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)
  • Logic Circuits (AREA)
  • Semiconductor Memories (AREA)
KR1020197036378A 2015-01-21 2015-12-04 상보성 전압 서플라이들을 사용하는 분리형 게이트 플래시 메모리 시스템 Active KR102153247B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/602,262 2015-01-21
US14/602,262 US9361995B1 (en) 2015-01-21 2015-01-21 Flash memory system using complementary voltage supplies
PCT/US2015/064082 WO2016118238A1 (en) 2015-01-21 2015-12-04 Split gate flash memory system using complementary voltage supplies

Related Parent Applications (1)

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KR1020177023166A Division KR20170106442A (ko) 2015-01-21 2015-12-04 상보성 전압 서플라이들을 사용하는 분리형 게이트 플래시 메모리 시스템

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KR102153247B1 true KR102153247B1 (ko) 2020-09-07

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KR1020177023166A Ceased KR20170106442A (ko) 2015-01-21 2015-12-04 상보성 전압 서플라이들을 사용하는 분리형 게이트 플래시 메모리 시스템

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US (4) US9361995B1 (enExample)
EP (2) EP3629331B1 (enExample)
JP (2) JP2018504731A (enExample)
KR (2) KR102153247B1 (enExample)
CN (3) CN113241101B (enExample)
TW (2) TWI621126B (enExample)
WO (1) WO2016118238A1 (enExample)

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US9361995B1 (en) 2016-06-07
JP2018504731A (ja) 2018-02-15
US10325666B2 (en) 2019-06-18
EP3248193B1 (en) 2020-02-05
TW201727655A (zh) 2017-08-01
TWI587305B (zh) 2017-06-11
US9508443B2 (en) 2016-11-29
CN113241101B (zh) 2024-01-30
KR20170106442A (ko) 2017-09-20
KR20190139341A (ko) 2019-12-17
JP2019169233A (ja) 2019-10-03
CN113241100A (zh) 2021-08-10
TW201638962A (zh) 2016-11-01
US20170076809A1 (en) 2017-03-16
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US20160240260A1 (en) 2016-08-18
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