CN1130772C - 含大量绝缘栅场效应晶体管的高集成电路半导体器件 - Google Patents

含大量绝缘栅场效应晶体管的高集成电路半导体器件 Download PDF

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Publication number
CN1130772C
CN1130772C CN98100947A CN98100947A CN1130772C CN 1130772 C CN1130772 C CN 1130772C CN 98100947 A CN98100947 A CN 98100947A CN 98100947 A CN98100947 A CN 98100947A CN 1130772 C CN1130772 C CN 1130772C
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contact
transistor
field effect
source
source contact
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Expired - Fee Related
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CN98100947A
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Chinese (zh)
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CN1195195A (zh
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笠井直记
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PS4 Russport Co.,Ltd.
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NEC Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823814—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823871—Complementary field-effect transistors, e.g. CMOS interconnection or wiring or contact manufacturing related aspects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/50—Peripheral circuit region structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/315—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor with the capacitor higher than a bit line

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
CN98100947A 1997-03-31 1998-03-23 含大量绝缘栅场效应晶体管的高集成电路半导体器件 Expired - Fee Related CN1130772C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP080270/1997 1997-03-31
JP9080270A JP3047850B2 (ja) 1997-03-31 1997-03-31 半導体装置
JP080270/97 1997-03-31

Publications (2)

Publication Number Publication Date
CN1195195A CN1195195A (zh) 1998-10-07
CN1130772C true CN1130772C (zh) 2003-12-10

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN98100947A Expired - Fee Related CN1130772C (zh) 1997-03-31 1998-03-23 含大量绝缘栅场效应晶体管的高集成电路半导体器件

Country Status (4)

Country Link
US (1) US6653690B1 (ja)
JP (1) JP3047850B2 (ja)
KR (1) KR100293079B1 (ja)
CN (1) CN1130772C (ja)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000200886A (ja) 1999-01-07 2000-07-18 Hitachi Ltd 半導体集積回路装置およびその製造方法
JP3160586B2 (ja) 1999-04-27 2001-04-25 松下電子工業株式会社 Ｃｍｏｓインバータ及びそれを用いたスタンダードセル
US7271489B2 (en) 2003-10-15 2007-09-18 Megica Corporation Post passivation interconnection schemes on top of the IC chips
JP4997710B2 (ja) * 2005-03-25 2012-08-08 富士通セミコンダクター株式会社 Ｌｓｉのセルのライブラリデータ生成方法
DE102007020258B4 (de) * 2007-04-30 2018-06-28 Globalfoundries Inc. Technik zur Verbesserung des Transistorleitungsverhaltens durch eine transistorspezifische Kontaktgestaltung
EP3514831B1 (en) 2009-12-26 2021-10-13 Canon Kabushiki Kaisha Solid-state image pickup apparatus and image pickup system
JP5960961B2 (ja) 2010-11-16 2016-08-02 キヤノン株式会社 固体撮像素子及び撮像システム
CN102437052B (zh) * 2011-11-18 2013-07-24 上海华虹Nec电子有限公司 形成硅化物的方法
JP6133611B2 (ja) * 2013-02-06 2017-05-24 エスアイアイ・セミコンダクタ株式会社 半導体装置
CN105023898B (zh) * 2014-04-21 2017-12-08 台达电子工业股份有限公司 半导体装置封装体
US20200194459A1 (en) * 2018-12-18 2020-06-18 Vanguard International Semiconductor Corporation Semiconductor devices and methods for fabricating the same
CN113540213B (zh) * 2020-04-17 2023-07-14 长鑫存储技术有限公司 有源区、有源区阵列及其形成方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60180169A (ja) 1984-02-27 1985-09-13 Nec Corp 絶縁ゲ−ト型電界効果半導体装置
KR940002772B1 (ko) 1984-08-31 1994-04-02 가부시기가이샤 히다찌세이사꾸쇼 반도체 집적회로 장치 및 그 제조방법
JPS6197963A (ja) 1984-10-19 1986-05-16 Hitachi Ltd 半導体集積回路装置
JPS62169472A (ja) * 1986-01-22 1987-07-25 Hitachi Ltd 半導体集積回路装置
US5146300A (en) * 1989-11-27 1992-09-08 Mitsubishi Denki Kabushiki Kaisha Semiconductor integrated circuit device having improved stacked capacitor and manufacturing method therefor
DE69123422T2 (de) * 1990-04-24 1997-06-05 Ramtron Int Corp Halbleiteranordnung mit ferroelektrischem material und verfahren zu deren herstellung
JPH04196440A (ja) 1990-11-28 1992-07-16 Seiko Epson Corp 半導体装置
JPH053294A (ja) 1991-06-26 1993-01-08 Nec Corp 半導体集積回路
JPH06275724A (ja) * 1993-01-22 1994-09-30 Mitsubishi Electric Corp 半導体装置およびその製造方法
JPH07131003A (ja) 1993-11-04 1995-05-19 Ricoh Co Ltd 半導体装置
US5376566A (en) 1993-11-12 1994-12-27 Micron Semiconductor, Inc. N-channel field effect transistor having an oblique arsenic implant for lowered series resistance
JP3603229B2 (ja) 1994-02-09 2004-12-22 富士通株式会社 半導体記憶装置
US5895766A (en) * 1995-09-20 1999-04-20 Micron Technology, Inc. Method of forming a field effect transistor

Also Published As

Publication number Publication date
JPH10275910A (ja) 1998-10-13
KR19980080856A (ko) 1998-11-25
JP3047850B2 (ja) 2000-06-05
US6653690B1 (en) 2003-11-25
KR100293079B1 (ko) 2001-07-12
CN1195195A (zh) 1998-10-07

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