CN1195195A - 含大量绝缘栅场效应晶体管的高集成电路半导体器件 - Google Patents
含大量绝缘栅场效应晶体管的高集成电路半导体器件 Download PDFInfo
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- CN1195195A CN1195195A CN98100947A CN98100947A CN1195195A CN 1195195 A CN1195195 A CN 1195195A CN 98100947 A CN98100947 A CN 98100947A CN 98100947 A CN98100947 A CN 98100947A CN 1195195 A CN1195195 A CN 1195195A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823814—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823871—Complementary field-effect transistors, e.g. CMOS interconnection or wiring or contact manufacturing related aspects
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/50—Peripheral circuit region structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
- H10B12/315—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor with the capacitor higher than a bit line
Abstract
Description
Claims (5)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP080270/1997 | 1997-03-31 | ||
JP9080270A JP3047850B2 (ja) | 1997-03-31 | 1997-03-31 | 半導体装置 |
JP080270/97 | 1997-03-31 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1195195A true CN1195195A (zh) | 1998-10-07 |
CN1130772C CN1130772C (zh) | 2003-12-10 |
Family
ID=13713609
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN98100947A Expired - Fee Related CN1130772C (zh) | 1997-03-31 | 1998-03-23 | 含大量绝缘栅场效应晶体管的高集成电路半导体器件 |
Country Status (4)
Country | Link |
---|---|
US (1) | US6653690B1 (zh) |
JP (1) | JP3047850B2 (zh) |
KR (1) | KR100293079B1 (zh) |
CN (1) | CN1130772C (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102468317A (zh) * | 2010-11-16 | 2012-05-23 | 佳能株式会社 | 固态图像传感器、其制造方法和成像系统 |
CN103972206A (zh) * | 2013-02-06 | 2014-08-06 | 精工电子有限公司 | 半导体装置 |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000200886A (ja) | 1999-01-07 | 2000-07-18 | Hitachi Ltd | 半導体集積回路装置およびその製造方法 |
JP3160586B2 (ja) | 1999-04-27 | 2001-04-25 | 松下電子工業株式会社 | Cmosインバータ及びそれを用いたスタンダードセル |
US7271489B2 (en) | 2003-10-15 | 2007-09-18 | Megica Corporation | Post passivation interconnection schemes on top of the IC chips |
JP4997710B2 (ja) * | 2005-03-25 | 2012-08-08 | 富士通セミコンダクター株式会社 | Lsiのセルのライブラリデータ生成方法 |
DE102007020258B4 (de) * | 2007-04-30 | 2018-06-28 | Globalfoundries Inc. | Technik zur Verbesserung des Transistorleitungsverhaltens durch eine transistorspezifische Kontaktgestaltung |
CN102668081B (zh) * | 2009-12-26 | 2016-02-03 | 佳能株式会社 | 固态图像拾取装置和图像拾取系统 |
CN102437052B (zh) * | 2011-11-18 | 2013-07-24 | 上海华虹Nec电子有限公司 | 形成硅化物的方法 |
CN105023898B (zh) * | 2014-04-21 | 2017-12-08 | 台达电子工业股份有限公司 | 半导体装置封装体 |
US20200194459A1 (en) * | 2018-12-18 | 2020-06-18 | Vanguard International Semiconductor Corporation | Semiconductor devices and methods for fabricating the same |
CN113540213B (zh) * | 2020-04-17 | 2023-07-14 | 长鑫存储技术有限公司 | 有源区、有源区阵列及其形成方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60180169A (ja) | 1984-02-27 | 1985-09-13 | Nec Corp | 絶縁ゲ−ト型電界効果半導体装置 |
KR940002772B1 (ko) | 1984-08-31 | 1994-04-02 | 가부시기가이샤 히다찌세이사꾸쇼 | 반도체 집적회로 장치 및 그 제조방법 |
JPS6197963A (ja) | 1984-10-19 | 1986-05-16 | Hitachi Ltd | 半導体集積回路装置 |
JPS62169472A (ja) * | 1986-01-22 | 1987-07-25 | Hitachi Ltd | 半導体集積回路装置 |
US5146300A (en) * | 1989-11-27 | 1992-09-08 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor integrated circuit device having improved stacked capacitor and manufacturing method therefor |
EP0478799B1 (en) * | 1990-04-24 | 1996-12-04 | Ramtron International Corporation | Semiconductor device having ferroelectric material and method of producing the same |
JPH04196440A (ja) | 1990-11-28 | 1992-07-16 | Seiko Epson Corp | 半導体装置 |
JPH053294A (ja) | 1991-06-26 | 1993-01-08 | Nec Corp | 半導体集積回路 |
JPH06275724A (ja) * | 1993-01-22 | 1994-09-30 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
JPH07131003A (ja) | 1993-11-04 | 1995-05-19 | Ricoh Co Ltd | 半導体装置 |
US5376566A (en) | 1993-11-12 | 1994-12-27 | Micron Semiconductor, Inc. | N-channel field effect transistor having an oblique arsenic implant for lowered series resistance |
JP3603229B2 (ja) | 1994-02-09 | 2004-12-22 | 富士通株式会社 | 半導体記憶装置 |
US5895766A (en) * | 1995-09-20 | 1999-04-20 | Micron Technology, Inc. | Method of forming a field effect transistor |
-
1997
- 1997-03-31 JP JP9080270A patent/JP3047850B2/ja not_active Expired - Fee Related
-
1998
- 1998-03-23 CN CN98100947A patent/CN1130772C/zh not_active Expired - Fee Related
- 1998-03-30 KR KR1019980011009A patent/KR100293079B1/ko not_active IP Right Cessation
- 1998-03-30 US US09/049,944 patent/US6653690B1/en not_active Expired - Fee Related
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102468317A (zh) * | 2010-11-16 | 2012-05-23 | 佳能株式会社 | 固态图像传感器、其制造方法和成像系统 |
US8952433B2 (en) | 2010-11-16 | 2015-02-10 | Canon Kabushiki Kaisha | Solid-state image sensor, method of manufacturing the same, and imaging system |
CN103972206A (zh) * | 2013-02-06 | 2014-08-06 | 精工电子有限公司 | 半导体装置 |
Also Published As
Publication number | Publication date |
---|---|
CN1130772C (zh) | 2003-12-10 |
US6653690B1 (en) | 2003-11-25 |
KR19980080856A (ko) | 1998-11-25 |
KR100293079B1 (ko) | 2001-07-12 |
JP3047850B2 (ja) | 2000-06-05 |
JPH10275910A (ja) | 1998-10-13 |
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C06 | Publication | ||
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ASS | Succession or assignment of patent right |
Owner name: NEC ELECTRONICS TAIWAN LTD. Free format text: FORMER OWNER: NIPPON ELECTRIC CO., LTD. Effective date: 20030328 |
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Effective date of registration: 20030328 Address after: Kanagawa, Japan Applicant after: NEC Corp. Address before: Tokyo, Japan Applicant before: NEC Corp. |
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Owner name: ELPIDA MEMORY INC. Free format text: FORMER OWNER: NEC ELECTRONICS TAIWAN LTD. Effective date: 20040402 |
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Effective date of registration: 20040402 Address after: Tokyo, Japan Patentee after: Nihitatsu Memory Co., Ltd. Address before: Kanagawa, Japan Patentee before: NEC Corp. |
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Owner name: PS4 LASCO CO., LTD. Free format text: FORMER OWNER: NIHITATSU MEMORY CO., LTD. Effective date: 20130902 |
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Granted publication date: 20031210 Termination date: 20150323 |
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