CN1258223C - 混载dram的半导体器件 - Google Patents
混载dram的半导体器件 Download PDFInfo
- Publication number
- CN1258223C CN1258223C CNB03152611XA CN03152611A CN1258223C CN 1258223 C CN1258223 C CN 1258223C CN B03152611X A CNB03152611X A CN B03152611XA CN 03152611 A CN03152611 A CN 03152611A CN 1258223 C CN1258223 C CN 1258223C
- Authority
- CN
- China
- Prior art keywords
- sense amplifier
- mentioned
- gate electrode
- type sense
- adjacency
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 42
- 238000000926 separation method Methods 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 10
- 238000002955 isolation Methods 0.000 claims description 8
- 229910044991 metal oxide Inorganic materials 0.000 claims description 7
- 150000004706 metal oxides Chemical class 0.000 claims description 7
- 230000000295 complement effect Effects 0.000 claims description 4
- 230000035945 sensitivity Effects 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000002184 metal Substances 0.000 description 4
- 230000005611 electricity Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/09—Manufacture or treatment with simultaneous manufacture of the peripheral circuit region and memory cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/50—Peripheral circuit region structures
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (9)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP230478/2002 | 2002-08-07 | ||
JP2002230478A JP2004071903A (ja) | 2002-08-07 | 2002-08-07 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1481029A CN1481029A (zh) | 2004-03-10 |
CN1258223C true CN1258223C (zh) | 2006-05-31 |
Family
ID=31492333
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB03152611XA Expired - Lifetime CN1258223C (zh) | 2002-08-07 | 2003-08-01 | 混载dram的半导体器件 |
Country Status (5)
Country | Link |
---|---|
US (1) | US6747320B2 (zh) |
JP (1) | JP2004071903A (zh) |
KR (1) | KR100544704B1 (zh) |
CN (1) | CN1258223C (zh) |
TW (1) | TWI243469B (zh) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005116969A (ja) * | 2003-10-10 | 2005-04-28 | Toshiba Corp | 半導体装置及びその製造方法 |
JP4470159B2 (ja) * | 2004-06-03 | 2010-06-02 | エルピーダメモリ株式会社 | ペアトランジスタの配列を高密度とする半導体記憶装置 |
US7282409B2 (en) * | 2004-06-23 | 2007-10-16 | Micron Technology, Inc. | Isolation structure for a memory cell using Al2O3 dielectric |
JP2006059978A (ja) * | 2004-08-19 | 2006-03-02 | Toshiba Corp | 半導体装置 |
JP4267009B2 (ja) | 2005-09-26 | 2009-05-27 | エルピーダメモリ株式会社 | 半導体メモリおよびその製造方法 |
DE102006027178A1 (de) * | 2005-11-21 | 2007-07-05 | Infineon Technologies Ag | Multi-Fin-Bauelement-Anordnung und Verfahren zum Herstellen einer Multi-Fin-Bauelement-Anordnung |
KR100693812B1 (ko) * | 2006-02-11 | 2007-03-12 | 삼성전자주식회사 | 반도체 장치 및 그 제조 방법, 반도체 장치의 센스 앰프 및그 형성 방법 |
JP4392694B2 (ja) * | 2007-01-10 | 2010-01-06 | エルピーダメモリ株式会社 | 半導体記憶装置 |
KR100843911B1 (ko) * | 2007-01-18 | 2008-07-03 | 주식회사 하이닉스반도체 | 반도체 소자의 레이아웃 |
KR100891329B1 (ko) * | 2007-01-26 | 2009-03-31 | 삼성전자주식회사 | 반도체 소자 및 그 제조 방법 |
KR100834746B1 (ko) * | 2007-02-14 | 2008-06-05 | 삼성전자주식회사 | 센스 앰프를 포함하는 반도체 소자 |
JP2010016258A (ja) * | 2008-07-04 | 2010-01-21 | Panasonic Corp | 半導体集積回路装置 |
KR101857729B1 (ko) * | 2011-06-17 | 2018-06-20 | 삼성전자주식회사 | 반도체 장치 |
KR102025597B1 (ko) * | 2013-01-23 | 2019-09-26 | 삼성전자주식회사 | 반도체 소자 |
US9337190B2 (en) * | 2013-03-12 | 2016-05-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device including dummy isolation gate structure and method of fabricating thereof |
CN108538839B (zh) * | 2017-03-01 | 2019-08-23 | 联华电子股份有限公司 | 半导体结构、用于存储器元件的半导体结构及其制作方法 |
CN114388015B (zh) * | 2022-01-13 | 2023-10-03 | 长鑫存储技术有限公司 | 读出电路结构 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5389810A (en) * | 1992-03-27 | 1995-02-14 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device having at least one symmetrical pair of MOSFETs |
JP2002216483A (ja) * | 2001-01-18 | 2002-08-02 | Toshiba Corp | 半導体記憶装置 |
-
2002
- 2002-08-07 JP JP2002230478A patent/JP2004071903A/ja active Pending
-
2003
- 2003-07-17 TW TW092119472A patent/TWI243469B/zh not_active IP Right Cessation
- 2003-07-18 US US10/623,342 patent/US6747320B2/en not_active Expired - Lifetime
- 2003-08-01 CN CNB03152611XA patent/CN1258223C/zh not_active Expired - Lifetime
- 2003-08-05 KR KR1020030054094A patent/KR100544704B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
KR100544704B1 (ko) | 2006-01-23 |
US6747320B2 (en) | 2004-06-08 |
TWI243469B (en) | 2005-11-11 |
KR20040014279A (ko) | 2004-02-14 |
CN1481029A (zh) | 2004-03-10 |
TW200402871A (en) | 2004-02-16 |
JP2004071903A (ja) | 2004-03-04 |
US20040026759A1 (en) | 2004-02-12 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: INTELLECTUAL PROPERTY BRIDGE NO. 1 CO., LTD. Free format text: FORMER OWNER: MATSUSHITA ELECTRIC INDUSTRIAL CO, LTD. Effective date: 20140609 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20140609 Address after: Tokyo, Japan Patentee after: Godo Kaisha IP Bridge 1 Address before: Osaka Japan Patentee before: Matsushita Electric Industrial Co.,Ltd. |
|
CX01 | Expiry of patent term | ||
CX01 | Expiry of patent term |
Granted publication date: 20060531 |