CN111725057A - 半导体装置的制造方法 - Google Patents
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Abstract
本发明提供一种半导体装置的制造方法。其使电极与氧化镓基板欧姆接触。半导体装置的制造方法具有如下工序：将氧化镓基板的表面暴露于酸性或者碱性的溶液中，来提高所述表面的表面粗糙度的工序；以及在表面粗糙度已被提高的所述表面形成电极的工序。根据该制造方法，由于使电极与表面粗糙度已被提高的所述表面接触，因此能够使电极与氧化镓基板欧姆接触。
Description
技术领域
本说明书公开的技术涉及一种半导体装置的制造方法。
背景技术
在专利文献1公开的半导体装置的制造方法中，在氧化镓基板的表面形成由钛(Ti)构成的电极。在专利文献1中，说明了根据该构成，能够使电极与氧化镓基板欧姆接触。
[专利文献1]日本特开2009-081468号公报
发明内容
有时即使如专利文献1那样在氧化镓基板的表面形成电极，电极也不呈现欧姆性。在本说明书中，提出一种能够使电极与氧化镓基板欧姆接触的新技术。
本说明书公开的半导体装置的制造方法具有如下工序：将氧化镓基板的表面暴露于酸性或者碱性的溶液中，来提高所述表面的表面粗糙度的工序；以及在表面粗糙度已被提高的所述表面形成电极的工序。
通过在像这样提高了表面粗糙度的氧化镓基板的表面形成电极，能够使电极与氧化镓基板欧姆接触。
附图说明
图1是示出实施方式的制造方法的流程图。
图2是示出特性测量用电极图案的俯视图。
图3是示出特性测量结果的图形。
具体实施方式
以下，对实施方式的半导体装置的制造方法进行说明。另外，本实施方式的制造方法的特征在于在氧化镓(Ga2O3)基板的表面形成电极的处理，因此以下对形成电极的处理进行说明。图1是示出形成电极的处理的流程图。
在步骤S2中，实施利用清洁液清洁氧化镓基板的表面的清洁工序。在此，使用过氧盐酸(即，含有盐酸(HCL)和过氧化氢(H2O2)的水溶液)作为清洁液。例如能够使用按比例含有35～37wt％的盐酸、30～35.5wt％的过氧化氢的过氧盐酸(盐酸与过氧化氢的体积比为5：2的过氧盐酸)。在一个示例中，在清洁工序中，可以将氧化镓基板浸入85℃的过氧盐酸中10分钟。在氧化镓基板的表面暴露于过氧盐酸后，其表面被过氧盐酸蚀刻。其结果是氧化镓基板的表面粗糙度Ra提高。在一个示例中，清洁前的氧化镓基板的表面粗糙度Ra为1.2nm，与之相对，清洁后的氧化镓基板的表面粗糙度Ra为2.8m。像这样氧化镓基板的表面粗糙度Ra提高的原因，认为是由于在氧化镓基板的表面被清洁液蚀刻时，蚀刻速率因晶体取向不同而不同，因此氧化镓基板的表面变得粗糙。在利用过氧盐酸进行清洁后，利用超纯水冲洗氧化镓基板，之后，吹入氮气来使氧化镓基板干燥。
在步骤S4中，实施通过溅射而在氧化镓基板的表面形成电极的电极形成工序。在此，在步骤S2中表面粗糙度Ra提高的氧化镓基板的表面形成由钛构成的电极。作为溅射方法，能够使用例如直流磁控溅射法。在该情况下，作为溅射条件，能够采用以下的条件。能够使用纯钛作为靶。能够使用氩气作为溅射气体。也可以不加热(阶段加热)氧化镓基板。能够将放电时的气体压力设为0.1～1.0Pa(例如0.2Pa)。能够将对靶的输入能量密度设为0.1～50W/cm2(例如7.9W/cm2)。能够将靶表面的最大水平磁场设为200～1000G。能够将靶与氧化镓基板之间的间隔设为30～200mm。在这样的条件下，在氧化镓基板的表面形成电极。例如能够形成厚度约200nm的电极。
接下来，对电极的特性的评价结果进行说明。图2示出了用于评价电极的特性的评价图案。图2中的以斜线示出的阴影区域表示电极20。电极20通过圆形的间隙区域22形成图案。电极20被间隙区域22分为第一部分20a与第二部分20b。间隙区域22不形成电极20而使氧化镓基板露出。
另外，间隙区域22如以下那样形成。首先，通过旋涂在形成间隙区域22前的电极20的表面涂覆抗蚀剂。接下来，通过紫外线曝光将间隙区域22的形状的图案转印至抗蚀剂。接下来，利用TMAH水溶液(四甲基氢氧化铵水溶液)蚀刻抗蚀剂，去除与间隙区域22相应的部分的抗蚀剂。接下来，利用含有28～38wt％的氨水、约31wt％的过氧化氢的混合溶液蚀刻电极20，去除与间隙区域22相应的部分的电极20。由此，如图2所示那样形成电极20图案。
对通过4端子法测量第一部分20a与第二部分20b之间的电流-电压特性而得的结果进行说明。通过电源30从第一部分20a经由氧化镓基板向第二部分20b流过任意的电流，通过电流计32测量流过的电流，并通过电压计34测量第一部分20a与第二部分20b之间的电压。图3示出了该测量结果。在图3中，分别针对进行了如图1所示的清洁工序(步骤S2)后进行电极形成工序(步骤S4)来形成电极20的情况(有清洁：图形A)、和不进行清洁工序(步骤S2)而进行电极形成工序(步骤S4)来形成电极20的情况(无清洁：图形B)，测量了电流-电压特性。另外，图3的测量结果示出了在将间隙区域22的内径r1(参照图2)设为240μm并将间隙区域22的外径r2(参照图2)设为260μm的情况下的测量结果。
如图3所示，在图形A(有清洁)中，电压与电流成线性关系，电极20与氧化镓基板欧姆接触。在图形A中，电阻为约0.19Ω。另一方面，图形B(无清洁)为曲线，在图形B中电压与电流不成线性关系。此外，在图形B中，与图形A相比，在电极20与氧化镓基板之间电流难以流动。在图形B(无清洁)中，电极20相对于氧化镓基板成肖特基接触。像这样，如果在进行清洁工序(步骤S2)后进行电极形成工序(步骤S4)，则电极20与氧化镓基板欧姆接触，能够大幅降低电极20与氧化镓基板之间的接触电阻。认为是在通过清洁工序提高了氧化镓基板的表面粗糙度后，电极20与氧化镓基板之间的接触面积增加，因此电极20与氧化镓基板之间的接触电阻降低，从而它们易于欧姆接触。
如以上说明的那样，根据实施方式的制造方法，能够容易地在氧化镓基板形成欧姆接触的电极。另外，在本说明书公开的制造方法中，在电极形成后是否加热氧化镓基板是任意的。如上述实施方式那样，即使在电极形成后不加热氧化镓基板，也能够使电极与氧化镓基板欧姆接触。因此，制造工序中的温度限制变少，能够更自由地构建制造工序。例如能够在电极形成前在氧化镓基板的表面形成不耐热的材料(例如聚酰亚胺等)的膜。另一方面，在电极形成后加热氧化镓基板的情况下，有时能够使电极与氧化镓基板之间的接触电阻进一步降低。
另外，在上述实施方式中，通过用过氧盐酸蚀刻氧化镓基板的表面来使该表面粗糙，但也可以利用其他的酸性水溶液来蚀刻氧化镓基板。因此，作为清洁工序(步骤S2)的清洁液，可以使用任意的酸性水溶液(例如磷酸、硝酸、盐酸、硫酸、醋酸、过氧化氢、或者包含至少其中之一的水溶液)。此外，氧化镓基板也可以由碱性水溶液来蚀刻。因此，作为清洁工序的清洁液，也可以使用任意的碱性水溶液(例如氢氧化钠、氢氧化钾、四甲基氢氧化铵、或者包含至少其中之一的水溶液)。
此外，在上述实施方式中，使用钛作为在电极形成工序(步骤S4)中形成的电极的材料，但也可以使用钛以外的材料。
此外，在上述实施方式中，在电极形成工序(步骤S4)中，通过直流磁控溅射法形成电极。然而，在电极形成工序中，也可以通过其他的溅射法形成电极。此外，在电极形成工序中，也可以通过蒸镀等的溅射法以外的方法形成电极。
以下列出本说明书公开的技术要素。另外，以下的各技术要素都是独立地起作用的技术要素。
另外，在本说明书公开的一个示例的半导体装置的制造方法中，所述溶液可以包括磷酸、硝酸、硫酸、醋酸、过氧化氢、氢氧化钠、四甲基氢氧化铵中的至少一者。此外，所述电极可以包括钛。
此外，在本说明书公开的一个示例的半导体装置的制造方法中，在提高表面粗糙度的工序中，氧化镓基板的表面粗糙度的提高量可以为0.5nm以上。此外，实施了提高表面粗糙度的工序后的氧化镓基板的表面粗糙度可以为2.5nm以上。
以上对实施方式进行了详细说明，但这些仅为例示，并不限定权利要求书保护的范围。权利要求书所记载的技术包括将以上所例示的具体例进行各种变形、变更后的内容。本说明书或说明书附图中所说明的技术要素能够单独或者通过各种组合而发挥其技术效用，并不限定于申请时权利要求记载的组合。另外，本说明书或说明书附图所例示的技术同时实现了多个目的，但对于仅实现其中一个目的这一点而言也具有技术效果。
Claims (3)
1.一种制造方法，其制造半导体装置，具有如下工序：
将氧化镓基板的表面暴露于酸性或者碱性的溶液中，来提高所述表面的表面粗糙度的工序；以及
在表面粗糙度已被提高的所述表面形成电极的工序。
2.根据权利要求1所述的制造方法，其中，所述溶液包括磷酸、硝酸、盐酸、硫酸、醋酸、过氧化氢、氢氧化钠、氢氧化钾、四甲基氢氧化铵中的至少一者。
3.根据权利要求1或者2所述的制造方法，其中，所述电极包括钛。
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| JP2006032736A (ja) * | 2004-07-16 | 2006-02-02 | Koha Co Ltd | 半導体素子の製造方法 |
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| WO2018150451A1 (ja) * | 2017-02-14 | 2018-08-23 | 三菱電機株式会社 | 電力用半導体装置 |
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| JP4789131B2 (ja) * | 2004-02-27 | 2011-10-12 | 独立行政法人産業技術総合研究所 | 太陽電池及び太陽電池の製造方法 |
| JP2009026914A (ja) * | 2007-07-19 | 2009-02-05 | Nippon Light Metal Co Ltd | ウェットエッチングにおけるエッチング量の算出方法 |
| WO2013035842A1 (ja) * | 2011-09-08 | 2013-03-14 | 株式会社タムラ製作所 | Ｇａ2Ｏ3系半導体素子 |
| WO2013069729A1 (ja) * | 2011-11-09 | 2013-05-16 | 株式会社タムラ製作所 | 半導体素子及びその製造方法 |
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| JP2006032736A (ja) * | 2004-07-16 | 2006-02-02 | Koha Co Ltd | 半導体素子の製造方法 |
| US20120167971A1 (en) * | 2010-12-30 | 2012-07-05 | Alexey Krasnov | Textured coating for thin-film solar cells and/or methods of making the same |
| US20180083161A1 (en) * | 2016-09-16 | 2018-03-22 | Nano And Advanced Materials Institute Limited | Direct texture transparent conductive oxide served as electrode or intermediate layer for photovoltaic and display applications |
| WO2018150451A1 (ja) * | 2017-02-14 | 2018-08-23 | 三菱電機株式会社 | 電力用半導体装置 |
| CN107993934A (zh) * | 2017-12-08 | 2018-05-04 | 中国科学院微电子研究所 | 增强氧化镓半导体器件欧姆接触的方法 |
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