CN111448665B - 针对rf应用的异质结双极晶体管中的发射极-基极网格结构 - Google Patents

针对rf应用的异质结双极晶体管中的发射极-基极网格结构 Download PDF

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Publication number
CN111448665B
CN111448665B CN201880078600.6A CN201880078600A CN111448665B CN 111448665 B CN111448665 B CN 111448665B CN 201880078600 A CN201880078600 A CN 201880078600A CN 111448665 B CN111448665 B CN 111448665B
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mesa
base
emitter
hbt
openings
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CN111448665A (zh
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R·达塔
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Qualcomm Inc
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Qualcomm Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/80—Heterojunction BJTs
    • H10D10/821—Vertical heterojunction BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/021—Manufacture or treatment of heterojunction BJTs [HBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133—Emitter regions of BJTs
    • H10D62/135—Non-interconnected multi-emitter structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133—Emitter regions of BJTs
    • H10D62/136—Emitter regions of BJTs of heterojunction BJTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/137—Collector regions of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/453—Controlling being realised by adding a replica circuit or by using one among multiple identical circuits as a replica circuit

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  • Bipolar Transistors (AREA)
CN201880078600.6A 2017-12-07 2018-11-07 针对rf应用的异质结双极晶体管中的发射极-基极网格结构 Active CN111448665B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/834,100 US20190181251A1 (en) 2017-12-07 2017-12-07 Mesh structure for heterojunction bipolar transistors for rf applications
US15/834,100 2017-12-07
PCT/US2018/059532 WO2019112741A1 (en) 2017-12-07 2018-11-07 Emitter-base mesh structure in heterojunction bipolar transistors for rf applications

Publications (2)

Publication Number Publication Date
CN111448665A CN111448665A (zh) 2020-07-24
CN111448665B true CN111448665B (zh) 2024-04-16

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US (1) US20190181251A1 (https=)
EP (1) EP3721477A1 (https=)
JP (1) JP7201684B2 (https=)
KR (1) KR102645071B1 (https=)
CN (1) CN111448665B (https=)
BR (1) BR112020011108B1 (https=)
SG (1) SG11202003686WA (https=)
TW (1) TWI813598B (https=)
WO (1) WO2019112741A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020257974A1 (zh) * 2019-06-24 2020-12-30 华为技术有限公司 异质结双极型晶体管及其制备方法
JP2021048250A (ja) * 2019-09-18 2021-03-25 株式会社村田製作所 半導体装置
JP2021132100A (ja) * 2020-02-19 2021-09-09 株式会社村田製作所 高周波電力増幅素子
CN113594239B (zh) * 2021-07-20 2022-09-27 弘大芯源(深圳)半导体有限公司 一种具有网格结构的双极功率晶体管
CN113921598B (zh) * 2021-08-25 2023-06-20 厦门市三安集成电路有限公司 一种hbt器件的金属连线方法

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EP2458639A1 (en) * 2010-11-25 2012-05-30 Nxp B.V. Bipolar transistor with base trench contacts insulated from the emitter.
US8994075B1 (en) * 2013-10-11 2015-03-31 Rf Micro Devices, Inc. Heterojunction bipolar transistor geometry for improved power amplifier performance

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JPS5818964A (ja) * 1981-07-28 1983-02-03 Fujitsu Ltd 半導体装置
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JPS60165759A (ja) * 1984-02-07 1985-08-28 Nippon Denso Co Ltd 集積回路素子
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JPH01189961A (ja) * 1988-01-26 1989-07-31 Mitsubishi Electric Corp 半導体装置
US5502338A (en) * 1992-04-30 1996-03-26 Hitachi, Ltd. Power transistor device having collector voltage clamped to stable level over wide temperature range
JPH08279562A (ja) * 1994-07-20 1996-10-22 Mitsubishi Electric Corp 半導体装置、及びその製造方法
JP2001230261A (ja) 2000-02-16 2001-08-24 Nec Corp 半導体装置及びその製造方法
JP2002076014A (ja) * 2000-08-30 2002-03-15 Mitsubishi Electric Corp 高周波用半導体装置
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WO2001057916A2 (de) * 2000-01-31 2001-08-09 Infineon Technologies Ag Bipolartransistor
EP2458639A1 (en) * 2010-11-25 2012-05-30 Nxp B.V. Bipolar transistor with base trench contacts insulated from the emitter.
US8994075B1 (en) * 2013-10-11 2015-03-31 Rf Micro Devices, Inc. Heterojunction bipolar transistor geometry for improved power amplifier performance

Also Published As

Publication number Publication date
KR20200090174A (ko) 2020-07-28
US20190181251A1 (en) 2019-06-13
EP3721477A1 (en) 2020-10-14
TWI813598B (zh) 2023-09-01
JP7201684B2 (ja) 2023-01-10
SG11202003686WA (en) 2020-06-29
BR112020011108B1 (pt) 2024-01-23
KR102645071B1 (ko) 2024-03-06
CN111448665A (zh) 2020-07-24
TW201937729A (zh) 2019-09-16
BR112020011108A2 (pt) 2020-11-17
JP2021506114A (ja) 2021-02-18
WO2019112741A1 (en) 2019-06-13

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