KR102645071B1 - Rf 애플리케이션용 헤테로 접합 바이폴라 트랜지스터들에서의 이미터-베이스 메시 구조 - Google Patents
Rf 애플리케이션용 헤테로 접합 바이폴라 트랜지스터들에서의 이미터-베이스 메시 구조 Download PDFInfo
- Publication number
- KR102645071B1 KR102645071B1 KR1020207015816A KR20207015816A KR102645071B1 KR 102645071 B1 KR102645071 B1 KR 102645071B1 KR 1020207015816 A KR1020207015816 A KR 1020207015816A KR 20207015816 A KR20207015816 A KR 20207015816A KR 102645071 B1 KR102645071 B1 KR 102645071B1
- Authority
- KR
- South Korea
- Prior art keywords
- mesa
- base
- emitter
- hbt
- openings
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H01L29/7371—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
- H10D10/80—Heterojunction BJTs
- H10D10/821—Vertical heterojunction BJTs
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- H01L29/0692—
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- H01L29/0813—
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- H01L29/0817—
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- H01L29/66242—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
- H10D10/01—Manufacture or treatment
- H10D10/021—Manufacture or treatment of heterojunction BJTs [HBT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
- H10D62/126—Top-view geometrical layouts of the regions or the junctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/133—Emitter regions of BJTs
- H10D62/135—Non-interconnected multi-emitter structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/133—Emitter regions of BJTs
- H10D62/136—Emitter regions of BJTs of heterojunction BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/137—Collector regions of BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/453—Controlling being realised by adding a replica circuit or by using one among multiple identical circuits as a replica circuit
Landscapes
- Bipolar Transistors (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15/834,100 US20190181251A1 (en) | 2017-12-07 | 2017-12-07 | Mesh structure for heterojunction bipolar transistors for rf applications |
| US15/834,100 | 2017-12-07 | ||
| PCT/US2018/059532 WO2019112741A1 (en) | 2017-12-07 | 2018-11-07 | Emitter-base mesh structure in heterojunction bipolar transistors for rf applications |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20200090174A KR20200090174A (ko) | 2020-07-28 |
| KR102645071B1 true KR102645071B1 (ko) | 2024-03-06 |
Family
ID=64477288
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020207015816A Active KR102645071B1 (ko) | 2017-12-07 | 2018-11-07 | Rf 애플리케이션용 헤테로 접합 바이폴라 트랜지스터들에서의 이미터-베이스 메시 구조 |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US20190181251A1 (https=) |
| EP (1) | EP3721477A1 (https=) |
| JP (1) | JP7201684B2 (https=) |
| KR (1) | KR102645071B1 (https=) |
| CN (1) | CN111448665B (https=) |
| BR (1) | BR112020011108B1 (https=) |
| SG (1) | SG11202003686WA (https=) |
| TW (1) | TWI813598B (https=) |
| WO (1) | WO2019112741A1 (https=) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020257974A1 (zh) * | 2019-06-24 | 2020-12-30 | 华为技术有限公司 | 异质结双极型晶体管及其制备方法 |
| JP2021048250A (ja) * | 2019-09-18 | 2021-03-25 | 株式会社村田製作所 | 半導体装置 |
| JP2021132100A (ja) * | 2020-02-19 | 2021-09-09 | 株式会社村田製作所 | 高周波電力増幅素子 |
| CN113594239B (zh) * | 2021-07-20 | 2022-09-27 | 弘大芯源(深圳)半导体有限公司 | 一种具有网格结构的双极功率晶体管 |
| CN113921598B (zh) * | 2021-08-25 | 2023-06-20 | 厦门市三安集成电路有限公司 | 一种hbt器件的金属连线方法 |
Family Cites Families (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3319139A (en) * | 1964-08-18 | 1967-05-09 | Hughes Aircraft Co | Planar transistor device having a reentrant shaped emitter region with base connection in the reentrant portion |
| NL6813997A (https=) * | 1968-09-30 | 1970-04-01 | ||
| JPS5818964A (ja) * | 1981-07-28 | 1983-02-03 | Fujitsu Ltd | 半導体装置 |
| JPS59210668A (ja) * | 1983-05-16 | 1984-11-29 | Fujitsu Ltd | 半導体装置 |
| JPS60165759A (ja) * | 1984-02-07 | 1985-08-28 | Nippon Denso Co Ltd | 集積回路素子 |
| US4654687A (en) * | 1985-03-28 | 1987-03-31 | Francois Hebert | High frequency bipolar transistor structures |
| US5140399A (en) * | 1987-04-30 | 1992-08-18 | Sony Corporation | Heterojunction bipolar transistor and the manufacturing method thereof |
| JPH01189961A (ja) * | 1988-01-26 | 1989-07-31 | Mitsubishi Electric Corp | 半導体装置 |
| US5502338A (en) * | 1992-04-30 | 1996-03-26 | Hitachi, Ltd. | Power transistor device having collector voltage clamped to stable level over wide temperature range |
| JPH08279562A (ja) * | 1994-07-20 | 1996-10-22 | Mitsubishi Electric Corp | 半導体装置、及びその製造方法 |
| DE10004111A1 (de) * | 2000-01-31 | 2001-08-09 | Infineon Technologies Ag | Bipolartransistor |
| JP2001230261A (ja) | 2000-02-16 | 2001-08-24 | Nec Corp | 半導体装置及びその製造方法 |
| JP2002076014A (ja) * | 2000-08-30 | 2002-03-15 | Mitsubishi Electric Corp | 高周波用半導体装置 |
| US8159048B2 (en) * | 2004-01-30 | 2012-04-17 | Triquint Semiconductor, Inc. | Bipolar junction transistor geometry |
| JP3847756B2 (ja) * | 2004-02-25 | 2006-11-22 | 松下電器産業株式会社 | 高周波増幅回路 |
| JP4089662B2 (ja) * | 2004-07-21 | 2008-05-28 | ソニー株式会社 | バイポーラトランジスタとその製造方法 |
| JP2006049693A (ja) | 2004-08-06 | 2006-02-16 | Matsushita Electric Ind Co Ltd | 半導体装置 |
| JP2006332117A (ja) * | 2005-05-23 | 2006-12-07 | Sharp Corp | トランジスタ構造および電子機器 |
| US7566920B2 (en) * | 2005-07-13 | 2009-07-28 | Panasonic Corporation | Bipolar transistor and power amplifier |
| JP2010080925A (ja) | 2008-08-26 | 2010-04-08 | Sanyo Electric Co Ltd | 半導体装置 |
| US8415764B2 (en) * | 2009-06-02 | 2013-04-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | High-voltage BJT formed using CMOS HV processes |
| EP2458639A1 (en) * | 2010-11-25 | 2012-05-30 | Nxp B.V. | Bipolar transistor with base trench contacts insulated from the emitter. |
| TWI512905B (zh) * | 2012-06-13 | 2015-12-11 | Win Semiconductors Corp | 化合物半導體元件晶圓整合結構 |
| TWI540722B (zh) * | 2013-04-17 | 2016-07-01 | 穩懋半導體股份有限公司 | 異質接面雙極電晶體佈局結構 |
| US8994075B1 (en) * | 2013-10-11 | 2015-03-31 | Rf Micro Devices, Inc. | Heterojunction bipolar transistor geometry for improved power amplifier performance |
| US20160020307A1 (en) * | 2014-07-16 | 2016-01-21 | Win Semiconductors Corp. | Heterojunction Bipolar Transistor |
| US20160141220A1 (en) * | 2014-11-18 | 2016-05-19 | Sumitomo Electric Industries, Ltd. | Hetero-bipolar transistor and method for producing the same |
| WO2016132594A1 (ja) * | 2015-02-17 | 2016-08-25 | 株式会社村田製作所 | ヘテロ接合バイポーラトランジスタ |
| TWI585907B (zh) * | 2016-05-13 | 2017-06-01 | 穩懋半導體股份有限公司 | 化合物半導體積體電路之先進抗濕氣結構 |
-
2017
- 2017-12-07 US US15/834,100 patent/US20190181251A1/en not_active Abandoned
-
2018
- 2018-11-07 CN CN201880078600.6A patent/CN111448665B/zh active Active
- 2018-11-07 EP EP18808577.3A patent/EP3721477A1/en active Pending
- 2018-11-07 JP JP2020530490A patent/JP7201684B2/ja active Active
- 2018-11-07 WO PCT/US2018/059532 patent/WO2019112741A1/en not_active Ceased
- 2018-11-07 KR KR1020207015816A patent/KR102645071B1/ko active Active
- 2018-11-07 BR BR112020011108-2A patent/BR112020011108B1/pt active IP Right Grant
- 2018-11-07 SG SG11202003686WA patent/SG11202003686WA/en unknown
- 2018-11-12 TW TW107140015A patent/TWI813598B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| KR20200090174A (ko) | 2020-07-28 |
| US20190181251A1 (en) | 2019-06-13 |
| EP3721477A1 (en) | 2020-10-14 |
| TWI813598B (zh) | 2023-09-01 |
| JP7201684B2 (ja) | 2023-01-10 |
| SG11202003686WA (en) | 2020-06-29 |
| BR112020011108B1 (pt) | 2024-01-23 |
| CN111448665A (zh) | 2020-07-24 |
| CN111448665B (zh) | 2024-04-16 |
| TW201937729A (zh) | 2019-09-16 |
| BR112020011108A2 (pt) | 2020-11-17 |
| JP2021506114A (ja) | 2021-02-18 |
| WO2019112741A1 (en) | 2019-06-13 |
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Legal Events
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| PA0105 | International application |
Patent event date: 20200602 Patent event code: PA01051R01D Comment text: International Patent Application |
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| PG1501 | Laying open of application | ||
| A201 | Request for examination | ||
| PA0201 | Request for examination |
Patent event code: PA02012R01D Patent event date: 20211018 Comment text: Request for Examination of Application |
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Comment text: Notification of reason for refusal Patent event date: 20231120 Patent event code: PE09021S01D |
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| E701 | Decision to grant or registration of patent right | ||
| PE0701 | Decision of registration |
Patent event code: PE07011S01D Comment text: Decision to Grant Registration Patent event date: 20240222 |
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| GRNT | Written decision to grant | ||
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Comment text: Registration of Establishment Patent event date: 20240304 Patent event code: PR07011E01D |
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| PR1002 | Payment of registration fee |
Payment date: 20240304 End annual number: 3 Start annual number: 1 |
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| PG1601 | Publication of registration |