JP7201684B2 - Ｒｆ用途向けのヘテロ接合バイポーラトランジスタ用のメッシュ構造 - Google Patents

Ｒｆ用途向けのヘテロ接合バイポーラトランジスタ用のメッシュ構造 Download PDF

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JP7201684B2
JP7201684B2 JP2020530490A JP2020530490A JP7201684B2 JP 7201684 B2 JP7201684 B2 JP 7201684B2 JP 2020530490 A JP2020530490 A JP 2020530490A JP 2020530490 A JP2020530490 A JP 2020530490A JP 7201684 B2 JP7201684 B2 JP 7201684B2
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mesa
base
emitter
hbt
collector
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JP2021506114A5 (https=
JP2021506114A (ja
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ラナディープ・ダッタ
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クアルコム，インコーポレイテッド
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/80—Heterojunction BJTs
    • H10D10/821—Vertical heterojunction BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/021—Manufacture or treatment of heterojunction BJTs [HBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133—Emitter regions of BJTs
    • H10D62/135—Non-interconnected multi-emitter structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133—Emitter regions of BJTs
    • H10D62/136—Emitter regions of BJTs of heterojunction BJTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/137—Collector regions of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/453—Controlling being realised by adding a replica circuit or by using one among multiple identical circuits as a replica circuit

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  • Bipolar Transistors (AREA)
JP2020530490A 2017-12-07 2018-11-07 Ｒｆ用途向けのヘテロ接合バイポーラトランジスタ用のメッシュ構造 Active JP7201684B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/834,100 US20190181251A1 (en) 2017-12-07 2017-12-07 Mesh structure for heterojunction bipolar transistors for rf applications
US15/834,100 2017-12-07
PCT/US2018/059532 WO2019112741A1 (en) 2017-12-07 2018-11-07 Emitter-base mesh structure in heterojunction bipolar transistors for rf applications

Publications (3)

Publication Number Publication Date
JP2021506114A JP2021506114A (ja) 2021-02-18
JP2021506114A5 JP2021506114A5 (https=) 2021-11-25
JP7201684B2 true JP7201684B2 (ja) 2023-01-10

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JP2020530490A Active JP7201684B2 (ja) 2017-12-07 2018-11-07 Ｒｆ用途向けのヘテロ接合バイポーラトランジスタ用のメッシュ構造

Country Status (9)

Country Link
US (1) US20190181251A1 (https=)
EP (1) EP3721477A1 (https=)
JP (1) JP7201684B2 (https=)
KR (1) KR102645071B1 (https=)
CN (1) CN111448665B (https=)
BR (1) BR112020011108B1 (https=)
SG (1) SG11202003686WA (https=)
TW (1) TWI813598B (https=)
WO (1) WO2019112741A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020257974A1 (zh) * 2019-06-24 2020-12-30 华为技术有限公司 异质结双极型晶体管及其制备方法
JP2021048250A (ja) * 2019-09-18 2021-03-25 株式会社村田製作所 半導体装置
JP2021132100A (ja) * 2020-02-19 2021-09-09 株式会社村田製作所 高周波電力増幅素子
CN113594239B (zh) * 2021-07-20 2022-09-27 弘大芯源(深圳)半导体有限公司 一种具有网格结构的双极功率晶体管
CN113921598B (zh) * 2021-08-25 2023-06-20 厦门市三安集成电路有限公司 一种hbt器件的金属连线方法

Citations (5)

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JP2001230261A (ja) 2000-02-16 2001-08-24 Nec Corp 半導体装置及びその製造方法
JP2003522414A (ja) 2000-01-31 2003-07-22 インフィネオン テクノロジーズ アクチェンゲゼルシャフト バイポーラトランジスタ
JP2006049693A (ja) 2004-08-06 2006-02-16 Matsushita Electric Ind Co Ltd 半導体装置
JP2007520086A (ja) 2004-01-30 2007-07-19 トライクェント セミコンダクター，インク． バイポーラ接合トランジスタジオメトリ
JP2010080925A (ja) 2008-08-26 2010-04-08 Sanyo Electric Co Ltd 半導体装置

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NL6813997A (https=) * 1968-09-30 1970-04-01
JPS5818964A (ja) * 1981-07-28 1983-02-03 Fujitsu Ltd 半導体装置
JPS59210668A (ja) * 1983-05-16 1984-11-29 Fujitsu Ltd 半導体装置
JPS60165759A (ja) * 1984-02-07 1985-08-28 Nippon Denso Co Ltd 集積回路素子
US4654687A (en) * 1985-03-28 1987-03-31 Francois Hebert High frequency bipolar transistor structures
US5140399A (en) * 1987-04-30 1992-08-18 Sony Corporation Heterojunction bipolar transistor and the manufacturing method thereof
JPH01189961A (ja) * 1988-01-26 1989-07-31 Mitsubishi Electric Corp 半導体装置
US5502338A (en) * 1992-04-30 1996-03-26 Hitachi, Ltd. Power transistor device having collector voltage clamped to stable level over wide temperature range
JPH08279562A (ja) * 1994-07-20 1996-10-22 Mitsubishi Electric Corp 半導体装置、及びその製造方法
JP2002076014A (ja) * 2000-08-30 2002-03-15 Mitsubishi Electric Corp 高周波用半導体装置
JP3847756B2 (ja) * 2004-02-25 2006-11-22 松下電器産業株式会社 高周波増幅回路
JP4089662B2 (ja) * 2004-07-21 2008-05-28 ソニー株式会社 バイポーラトランジスタとその製造方法
JP2006332117A (ja) * 2005-05-23 2006-12-07 Sharp Corp トランジスタ構造および電子機器
US7566920B2 (en) * 2005-07-13 2009-07-28 Panasonic Corporation Bipolar transistor and power amplifier
US8415764B2 (en) * 2009-06-02 2013-04-09 Taiwan Semiconductor Manufacturing Company, Ltd. High-voltage BJT formed using CMOS HV processes
EP2458639A1 (en) * 2010-11-25 2012-05-30 Nxp B.V. Bipolar transistor with base trench contacts insulated from the emitter.
TWI512905B (zh) * 2012-06-13 2015-12-11 Win Semiconductors Corp 化合物半導體元件晶圓整合結構
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JP2003522414A (ja) 2000-01-31 2003-07-22 インフィネオン テクノロジーズ アクチェンゲゼルシャフト バイポーラトランジスタ
JP2001230261A (ja) 2000-02-16 2001-08-24 Nec Corp 半導体装置及びその製造方法
JP2007520086A (ja) 2004-01-30 2007-07-19 トライクェント セミコンダクター，インク． バイポーラ接合トランジスタジオメトリ
JP2006049693A (ja) 2004-08-06 2006-02-16 Matsushita Electric Ind Co Ltd 半導体装置
JP2010080925A (ja) 2008-08-26 2010-04-08 Sanyo Electric Co Ltd 半導体装置

Also Published As

Publication number Publication date
KR20200090174A (ko) 2020-07-28
US20190181251A1 (en) 2019-06-13
EP3721477A1 (en) 2020-10-14
TWI813598B (zh) 2023-09-01
SG11202003686WA (en) 2020-06-29
BR112020011108B1 (pt) 2024-01-23
KR102645071B1 (ko) 2024-03-06
CN111448665A (zh) 2020-07-24
CN111448665B (zh) 2024-04-16
TW201937729A (zh) 2019-09-16
BR112020011108A2 (pt) 2020-11-17
JP2021506114A (ja) 2021-02-18
WO2019112741A1 (en) 2019-06-13

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